VISHAY 6EWH06FN-M3

New Product
VS-6EWH06FN-M3
Vishay Semiconductors
Ultralow VF Ultrafast Rectifier, 6 A FRED Pt®
FEATURES
• Hyperfast recovery time, reduced Qrr and soft
recovery
2, 4
• 175 °C maximum operating junction temperature
• For PFC CRM/CCM operation
D-PAK (TO-252AA)
1
N/C
• Low forward voltage drop
3
Anode
• Low leakage current
• Meets MSL level 1, per J-STD-020, LF maximum peak of
260 °C
• Compliant to RoHS Directive 2002/95/EC
• Halogen-free according to IEC 61249-2-21 definition
PRODUCT SUMMARY
Package
D-PAK (TO-252AA)
IF(AV)
6A
VR
600 V
VF at IF
2.1 V
trr (typ.)
18 ns
TJ max.
175 °C
Diode variation
Single die
DESCRIPTION/APPLICATIONS
State of the art hyperfast recovery rectifiers designed with
optimized performance of forward voltage drop, hyperfast
recovery time, and soft recovery.
The planar structure and the platinum doped life time
control guarantee the best overall performance,
ruggedness and reliability characteristics.
These devices are intended for use in PFC boost stage in
the AC/DC section of SMPS inverters or as freewheeling
diodes. Their extremely optimized stored charge and low
recovery current minimize the switching losses and reduce
over dissipation in the switching element and snubbers.
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
600
V
Peak repetitive reverse voltage
VRRM
Average rectified forward current
IF(AV)
TC = 144 °C
6
Non-repetitive peak surge current
IFSM
TJ = 25 °C
70
Peak repetitive forward current
IFM
TC = 144 °C, f = 20 kHz, d = 50 %
12
Operating junction and storage temperatures
TJ, TStg
A
- 65 to 175
°C
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER
Breakdown voltage,
blocking voltage
SYMBOL
VBR,
VR
Forward voltage
VF
Reverse leakage current
IR
Junction capacitance
Series inductance
Document Number: 93514
Revision: 31-Mar-11
TEST CONDITIONS
MIN.
TYP.
MAX.
600
-
-
IF = 6 A
-
1.60
2.1
IF = 6 A, TJ = 150 °C
-
1.26
1.7
IR = 100 μA
UNITS
V
VR = VR rated
-
-
50
TJ = 150 °C, VR = VR rated
-
-
250
CT
VR = 600 V
-
3.5
-
pF
LS
Measured lead to lead 5 mm from package body
-
8
-
nH
μA
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1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
New Product
VS-6EWH06FN-M3
Vishay Semiconductors
Ultralow VF Ultrafast Rectifier, 6 A FRED Pt®
DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER
Reverse recovery time
SYMBOL
trr
TEST CONDITIONS
Reverse recovery charge
IRRM
TYP.
MAX.
IF = 1 A, dIF/dt = 100 A/μs, VR = 30 V
-
18
25
IF = 1 A, dIF/dt = 50 A/μs, VR = 30 V
-
22
-
TJ = 25 °C
-
27
-
-
37
-
TJ = 125 °C
Peak recovery current
MIN.
TJ = 25 °C
TJ = 125 °C
IF = 6 A
dIF/dt = 200 A/μs
VR = 390 V
-
4.1
-
-
5.3
-
UNITS
ns
A
TJ = 25 °C
-
57
-
TJ = 125 °C
-
103
-
MIN.
TYP.
MAX.
UNITS
TJ, TStg
- 65
-
175
°C
RthJC
-
-
3
°C/W
Qrr
nC
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction and storage
temperature range
Thermal resistance,
junction to case per leg
SYMBOL
TEST CONDITIONS
Approximate weight
Marking device
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2
Case style D-PAK (TO-252AA)
0.3
g
0.01
oz.
6EWH06FN
For technical questions within your region, please contact one of the following:
Document Number: 93514
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Revision: 31-Mar-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
New Product
VS-6EWH06FN-M3
Vishay Semiconductors
100
100
IR - Reverse Current (µA)
IF - Instantaneous Forward Current (A)
Ultralow VF Ultrafast Rectifier, 6 A FRED Pt®
TJ = 175 °C
10
1
TJ = 125 °C
TJ = 175 °C
10
TJ = 150 °C
1
TJ = 125 °C
TJ = 100 °C
0.1
TJ = 75 °C
0.01
TJ = 50 °C
TJ = 25 °C
TJ = 25 °C
0.1
0.001
0
0.5
1.0
1.5
2.0
2.5
3.0
0
VFM - Forward Voltage Drop (V)
93514_01
100
300
400
500
600
VR - Reverse Voltage (V)
93514_02
Fig. 1 - Typical Forward Voltage Drop Characteristics
200
Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
CT - Junction Capacitance (pF)
100
10
1
0
93514_03
100
200
300
400
500
600
VR - Reverse Voltage (V)
ZthJC - Thermal Impedance (°C/W)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
10
1
D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01
Single pulse
(thermal resistance)
0.1
0.00001
93514_04
0.0001
0.001
0.01
0.1
1
t1 - Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics
Document Number: 93514
Revision: 31-Mar-11
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This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
New Product
VS-6EWH06FN-M3
Ultralow VF Ultrafast Rectifier, 6 A FRED Pt®
40
180
170
35
DC
6 A, TJ = 125 °C
160
35
150
trr (ns)
Allowable Case Temperature (°C)
Vishay Semiconductors
140
130
20
Square wave (D = 0.50)
80 % rated VR applied
6 A, TJ = 25 °C
15
120
See note (1)
110
0
2
4
6
8
10
100
10
IF(AV) - Average Forward Current (A)
93514_05
93514_07
1000
dIF/dt (A/µs)
Fig. 7 - Typical Reverse Recovery Time vs. dIF/dt
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
14
200
RMS limit
180
12
160
10
140
Qrr (nC)
Average Power Loss (W)
25
8
D = 0.01
D = 0.02
D = 0.05
D = 0.10
D = 0.20
D = 0.50
DC
6
4
2
93514_06
3
6
120
100
80
60
40
6 A, TJ = 25 °C
20
0
0
6 A, TJ = 125 °C
9
IF(AV) - Average Forward Current (A)
Fig. 6 - Forward Power Loss Characteristics
0
100
93514_08
1000
dIF/dt (A/µs)
Fig. 8 - Typical Stored Charge vs. dIF/dt
Note
Formula used: TC = TJ - (Pd + PdREV) x RthJC;
Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6);
PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = Rated VR
(1)
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For technical questions within your region, please contact one of the following:
Document Number: 93514
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Revision: 31-Mar-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
New Product
VS-6EWH06FN-M3
Ultralow VF Ultrafast Rectifier, 6 A FRED Pt®
Vishay Semiconductors
VR = 200 V
0.01 Ω
L = 70 μH
D.U.T.
dIF/dt
adjust
D
IRFP250
G
S
Fig. 9 - Reverse Recovery Parameter Test Circuit
(3)
trr
IF
ta
tb
0
Qrr
(2)
IRRM
(4)
0.5 IRRM
dI(rec)M/dt (5)
0.75 IRRM
(1) dIF/dt
(1) dIF/dt - rate of change of current
through zero crossing
(2) IRRM - peak reverse recovery current
(3) trr - reverse recovery time measured
from zero crossing point of negative
going IF to point where a line passing
through 0.75 IRRM and 0.50 IRRM
extrapolated to zero current.
(4) Qrr - area under curve defined by trr
and IRRM
Qrr =
trr x IRRM
2
(5) dI(rec)M/dt - peak rate of change of
current during tb portion of trr
Fig. 10 - Reverse Recovery Waveform and Definitions
Document Number: 93514
Revision: 31-Mar-11
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This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
New Product
VS-6EWH06FN-M3
Ultralow VF Ultrafast Rectifier, 6 A FRED Pt®
Vishay Semiconductors
ORDERING INFORMATION TABLE
Device code
VS-
6
E
W
H
06
FN
1
2
3
4
5
6
7
1
-
Vishay Semiconductors product
2
-
Current rating (6 = 6 A)
3
-
Circuit configuration:
TRL -M3
8
9
E = Single diode
4
-
Package identifier:
W = D-PAK
5
-
H = Hyperfast recovery
6
-
Voltage rating (06 = 600 V)
7
-
FN = TO-252AA
8
-
None = Tube
TR = Tape and reel
TRL = Tape and reel (left oriented)
TRR = Tape and reel (right oriented)
9
-
Environmental digit:
-M3 = Halogen-free, RoHS compliant and terminations lead (Pb)-free
ORDERING INFORMATION (Example)
PREFERRED P/N
QUANTITY PER T/R
MINIMUM ORDER QUANTITY
PACKAGING DESCRIPTION
VS-6EWH06FN-M3
75
3000
Antistatic plastic tube
VS-6EWH06FNTR-M3
2000
2000
13" diameter reel
VS-6EWH06FNTRL-M3
3000
3000
13" diameter reel
VS-6EWH06FNTRR-M3
3000
3000
13" diameter reel
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95016
Part marking information
www.vishay.com/doc?95176
Packaging information
www.vishay.com/doc?95033
SPICE model
www.vishay.com/doc?95187
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For technical questions within your region, please contact one of the following:
Document Number: 93514
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Revision: 31-Mar-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Outline Dimensions
Vishay High Power Products
D-PAK (TO-252AA)
DIMENSIONS in millimeters and inches
(5)
A
E
b3
Pad layout
C
A
(3)
0.010 M C A B
c2
A
L3 (3)
Ø1
4
Ø2
4
B
Seating
plane
H
D (5)
1
2
0.245
MIN.
(6.23)
D1
L4
3
3
(2) L5
2
b
1
A
c
b2
0.06
MIN.
(1.524)
0.010 M C A B
2x e
0.093 (2.38)
0.085 (2.18)
(L1)
Detail “C”
Rotated 90 °CW
Scale: 20:1
H (7)
Lead tip
C
Gauge
plane
L2
MILLIMETERS
MIN.
0.488 (12.40)
0.409 (10.40)
0.089
MIN.
(2.28)
Detail “C”
SYMBOL
0.265
MIN.
(6.74)
E1
INCHES
MAX.
MIN.
MAX.
C Seating
plane
C
Ø
L
NOTES
A1
SYMBOL
MILLIMETERS
MIN.
MAX.
MAX.
A
2.18
2.39
0.086
0.094
e
A1
-
0.13
-
0.005
H
9.40
10.41
0.370
0.410
b
0.64
0.89
0.025
0.035
L
1.40
1.78
0.055
0.070
b2
0.76
1.14
0.030
0.045
L1
3
2.29 BSC
INCHES
MIN.
2.74 BSC
L2
0.51 BSC
NOTES
0.090 BSC
0.108 REF.
b3
4.95
5.46
0.195
0.215
c
0.46
0.61
0.018
0.024
L3
0.89
1.27
0.035
0.020 BSC
0.050
c2
0.46
0.89
0.018
0.035
L4
-
1.02
-
0.040
D
5.97
6.22
0.235
0.245
5
L5
1.14
1.52
0.045
0.060
D1
5.21
-
0.205
-
3
Ø
0°
10°
0°
10°
E
6.35
6.73
0.250
0.265
5
Ø1
0°
15°
0°
15°
E1
4.32
-
0.170
-
3
Ø2
25°
35°
25°
35°
3
2
Notes
(1)
Dimensioning and tolerancing as per ASME Y14.5M-1994
(2)
Lead dimension uncontrolled in L5
(3)
Dimension D1, E1, L3 and b3 establish a minimum mounting surface for thermal pad
(4)
Section C - C dimension apply to the flat section of the lead between 0.13 and 0.25 mm (0.005 and 0.10") from the lead tip
(5)
Dimension D, and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at
the outermost extremes of the plastic body
(6)
Dimension b1 and c1 applied to base metal only
(7)
Datum A and B to be determined at datum plane H
(8)
Outline conforms to JEDEC outline TO-252AA
Document Number: 95016
Revision: 04-Nov-08
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For technical questions concerning module products, contact: ind-modules@vishay.com
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Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
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Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular
product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk and agree
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damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay
or its distributor was negligent regarding the design or manufacture of the part. Please contact authorized Vishay personnel to
obtain written terms and conditions regarding products designed for such applications.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by
any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.
Material Category Policy
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.
Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
Revision: 12-Mar-12
1
Document Number: 91000