DIODES 2N7002-01

2N7002-01
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT
TRANSISTOR
Features
·
·
·
·
·
Low On-Resistance: RDS(ON)
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
SOT-23
Dim
Min
Max
A
0.37
0.51
B
1.19
1.40
C
2.10
2.50
D
0.89
1.05
E
0.45
0.61
G
G
1.78
2.05
H
H
2.65
3.05
J
0.013
0.15
K
0.89
1.10
A
D
TOP VIEW
G
Mechanical Data
·
·
·
·
·
Case: SOT-23, Molded Plastic
Terminals: Solderable per MIL-STD-202,
Method 208
Terminal Connections: See Diagram
Marking: K7A
Weight: 0.008 grams (approx.)
B
C
S
D
E
M
K
J
L
L
0.45
0.61
M
0.076
0.178
All Dimensions in mm
Maximum Ratings
@ TA = 25°C unless otherwise specified
Characteristic
Symbol
Value
Units
Drain-Source Voltage
VDSS
60
V
Drain-Gate Voltage RGS £ 1.0MW
VDGR
60
V
VGSS
±20
±40
V
ID
115
73
800
mA
Pd
200
1.60
mW
mW/°C
RqJA
625
K/W
Tj, TSTG
-55 to +150
°C
Gate-Source Voltage
Drain Current (Note 1)
Continuous
Pulsed
Continuous
Continuous @ 100°C
Pulsed
Total Power Dissipation (Note 1)
Derating above TA = 25°C
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
Note: 1. Valid provided that terminals are kept at specified ambient temperature.
2. Pulse width £ 300ms, duty cycle £ 2%.
DS30026 Rev. C-5
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2N7002-01
Electrical Characteristics
@ TA = 25°C unless otherwise specified
Characteristic
Symbol
Min
Typ
Max
Unit
BVDSS
60
Test Condition
70
¾
V
VGS = 0V, ID = 10mA
µA
VDS = 60V, VGS = 0V
OFF CHARACTERISTICS (Note 2)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
@ TC = 25°C
@ TC = 125°C
IDSS
¾
¾
1.0
500
IGSS
¾
¾
±10
nA
VGS = ±20V, VDS = 0V
VGS(th)
1.0
¾
2.0
V
VDS = VGS, ID =-250mA
RDS (ON)
¾
3.2
4.4
7.5
13.5
W
VGS = 5.0V, ID = 0.05A
VGS = 10V, ID = 0.5A
ID(ON)
¾
1.0
0.5
A
VGS = 10V, VDS = 7.5V
gFS
80
¾
¾
mS
Input Capacitance
Ciss
¾
22
50
pF
Output Capacitance
Coss
¾
11
25
pF
Reverse Transfer Capacitance
Crss
¾
2.0
5.0
pF
Turn-On Delay Time
tD(ON)
¾
7.0
20
ns
Turn-Off Delay Time
tD(OFF)
¾
11
20
ns
Gate-Body Leakage
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage
Static Drain-Source On-Resistance
On-State Drain Current
Forward Transconductance
@ Tj = 25°C
@ Tj = 125°C
VDS =10V, ID = 0.2A
DYNAMIC CHARACTERISTICS
VDS = 25V, VGS = 0V
f = 1.0MHz
SWITCHING CHARACTERISTICS
VDD = 30V, ID = 0.2A,
RL = 150W, VGEN = 10V,
RGEN = 25W
Note: 1. Valid provided that terminals are kept at specified ambient temperature.
2. Pulse width £ 300ms, duty cycle £ 2%.
DS30026 Rev. C-5
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2N7002-01
0.8
ID, DRAIN-SOURCE CURRENT (A)
7
VGS = 10V
9.0V
8.0V
7.0V
6.5V
6.0V
5.0V
4.5V
4.0V
3.5V
3.0V
2.5V
2.0/1.0V
0.6
Tj = 25°C
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
1.0
5.5V
5.0V
0.4
0.2
6
5
VGS = 5.0V
4
3
VGS = 10V
2
1
0
0
0
1
3
2
0
5
4
0.8
1.0
6
1.5
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
2.0
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
0.6
ID, DRAIN CURRENT (A)
Fig. 2 On-Resistance vs Drain Current
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 1 On-Region Characteristics
VGS = 10V, ID = 0.5A
VGS = 5.0V, ID = 0.05A
1.0
0.5
0
0.4
0.2
-55
-30
-5
20
45
70
95
120
145
Tj, JUNCTION TEMPERATURE (°C)
Fig. 3 On-Resistance vs Junction Temperature
DS30026 Rev. C-5
5
4
ID = 500mA
ID = 50mA
3
2
1
0
0
2
4
6
8
10
12
14
16
18
VGS, GATE TO SOURCE VOLTAGE (V)
Fig. 4 On-Resistance vs. Gate-Source Voltage
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2N7002-01