DSS60601MZ4 LOW VCE(SAT) NPN SURFACE MOUNT TRANSISTOR NEW PRODUCT Please click here to visit our online spice models database. Features Mechanical Data • • • • • • • • Ideal for Medium Power Switching or Amplification Applications Complementary PNP Type Available (DSS60600MZ4) Ultra Low Collector-Emitter Saturation Voltage Ideally Suited for Automated Assembly Processes Lead Free By Design/RoHS Compliant (Note 1) "Green" Device (Note 2) Case: SOT-223 Case Material: Molded Plastic, "Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020D Terminals: Finish — Matte Tin annealed over Copper leadframe (Lead Free Plating). Solderable per MIL-STD-202, Method 208 Marking Information: See Page 4 Ordering Information: See Page 4 Weight: 0.115 grams (approximate) • • • • • COLLECTOR 2,4 C 4 1 BASE 3 EMITTER Top View Maximum Ratings 3 E Device Schematic 2 C 1 B Pin Out Configuration @TA = 25°C unless otherwise specified Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Collector Current Continuous Collector Current Symbol VCBO VCEO VEBO ICM IC Value 100 60 6 12 6 Unit V V V A A Value 1.2 104 2 62.5 -55 to +150 Unit W °C/W W °C/W °C Thermal Characteristics Characteristic Power Dissipation (Note 3) @ TA = 25°C Thermal Resistance, Junction to Ambient Air (Note 3) @ TA = 25°C Power Dissipation (Note 4) @ TA = 25°C Thermal Resistance, Junction to Ambient Air (Note 4) @ TA = 25°C Operating and Storage Temperature Range Notes: 1. 2. 3. 4. Symbol PD RθJA PD RθJA TJ, TSTG No purposefully added lead. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. Device mounted on FR-4 PCB with minimum recommended pad layout. Device mounted on Polymide PCB with 330mm2 2 oz. Copper pad layout. DSS60601MZ4 Document number: DS31587 Rev. 2 - 2 1 of 5 www.diodes.com December 2008 © Diodes Incorporated DSS60601MZ4 Electrical Characteristics @TA = 25°C unless otherwise specified Symbol Min Typ Max Unit V(BR)CBO V(BR)CEO V(BR)EBO 100 60 6 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ 100 50 100 V V V nA μA nA ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ 80 ⎯ ⎯ 40 ⎯ ⎯ ⎯ 360 ⎯ ⎯ 40 60 100 220 300 50 0.9 0.9 mΩ V V Collector-Base Cutoff Current ICBO Emitter-Base Cutoff Current ON CHARACTERISTICS (Note 5) IEBO Collector-Emitter Saturation Voltage VCE(SAT) Equivalent On-Resistance Base-Emitter Saturation Voltage Base-Emitter Turn-on Voltage SMALL SIGNAL CHARACTERISTICS RCE(SAT) VBE(SAT) VBE(ON) 150 120 100 50 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ Transition Frequency fT 100 ⎯ ⎯ MHz Output Capacitance Input Capacitance Cobo Cibo ⎯ ⎯ 26 325 ⎯ ⎯ pF pF DC Current Gain hFE ⎯ mV Test Conditions IC = 100μA IC = 10mA IE = 100μA VCB = 40V, IE = 0 VCB = 40V, IE = 0, TA = 150°C VEB = 6V, IC = 0 VCE = 2V, IC = 0.5A VCE = 2V, IC = 1A VCE = 2V, IC = 2A VCE = 2V, IC = 6A IC = 0.1A, IB = 2.0mA IC = 1A, IB = 100mA IC = 2A, IB = 200mA IC = 3A, IB = 60mA IC = 6A, IB = 600mA IE = 2A, IB = 200mA IC = 1A, IB = 100mA VCE = 2V, IC = 1A VCE = 10V, IC = 100mA, f = 100MHz VCB = 10V, f = 1MHz VEB = 5V, f = 1MHz 5. Measured under pulsed conditions. Pulse width = 300μs. Duty cycle ≤2%. 2.0 100 1.6 10 IC, COLLECTOR CURRENT (A) Notes: PD, POWER DISSIPATION (mW) NEW PRODUCT Characteristic OFF CHARACTERISTICS Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage (Note 5) Emitter-Base Breakdown Voltage 1.2 0.8 0.4 0 0 25 50 100 125 75 TA, AMBIENT TEMPERATURE (°C) Fig. 1 Power Dissipation vs. Ambient Temperature DSS60601MZ4 Document number: DS31587 Rev. 2 - 2 150 Pw = 1ms Pw = 10ms 1 Pw = 100ms 0.1 0.01 0.001 0.1 2 of 5 www.diodes.com 1 10 100 VCE, COLLECTOR-EMITTER VOLTAGE (V) Fig. 2 Typical Collector Current vs. Collector-Emitter Voltage (Note 3) December 2008 © Diodes Incorporated DSS60601MZ4 1,000 1.4 T A = 85°C 1.0 IB = 5mA 0.8 IB = 4mA 0.6 IB = 3mA 0.4 IB = 2mA hFE, DC CURRENT GAIN IC, COLLECTOR CURRENT (mA) TA = 150°C 0.2 T A = 25°C 100 10 0 1 10 100 1,000 10,000 IC, COLLECTOR CURRENT (mA) Fig. 4 Typical DC Current Gain vs. Collector Current 1 2 3 4 5 VCE, COLLECTOR-EMITTER VOLTAGE (V) Fig. 3 Typical Collector Current vs. Collector-Emitter Voltage VBE(ON), BASE-EMITTER TURN-ON VOLTAGE (V) 1 IC/IB = 10 VCE(SAT), COLLECTOR-EMITTER SATURATION VOLTAGE (V) TA = -55°C IB = 1mA 0 T A = 150°C 0.1 T A = 85°C TA = 25°C TA = -55°C 0.01 0.001 1 10 100 1,000 10,000 IC, COLLECTOR CURRENT (mA) Fig. 5 Typical Collector-Emitter Saturation Voltage vs. Collector Current 1.2 VCE = 2V 1.0 0.8 TA = -55°C 0.6 TA = 25°C 0.4 T A = 85°C 0.2 TA = 150°C 0 1 10 100 1,000 10,000 IC, COLLECTOR CURRENT (mA) Fig. 6 Typical Base-Emitter Turn-On Voltage vs. Collector Current 1,000 1.2 f = 1MHz IC/IB = 10 1.0 Cibo CAPACITANCE (pF) VBE(SAT), BASE-EMITTER SATURATION VOLTAGE (V) NEW PRODUCT VCE = 2V 1.2 0.8 TA = -55°C 0.6 TA = 25°C 0.4 T A = 85°C 100 TA = 150°C 0.2 0 1 Cobo 10 10 100 1,000 10,000 IC, COLLECTOR CURRENT (mA) Fig. 7 Typical Base-Emitter Saturation Voltage vs. Collector Current DSS60601MZ4 Document number: DS31587 Rev. 2 - 2 3 of 5 www.diodes.com 0.1 1 10 100 VR, REVERSE VOLTAGE (V) Fig. 8 Typical Capacitance Characteristics December 2008 © Diodes Incorporated DSS60601MZ4 fT, GAIN-BANDWIDTH PRODUCT (MHz) 100 10 VCE = 10V f = 100MHz 1 0 10 20 30 40 50 60 70 80 90 100 IC, COLLECTOR CURRENT (mA) Fig. 9 Typical Gain-Bandwidth Product vs. Collector Current 1 r(t), TRANSIENT THERMAL RESISTANCE NEW PRODUCT 1,000 D = 0.7 D = 0.5 D = 0.3 0.1 D = 0.1 D = 0.05 D = 0.9 RθJA(t) = r(t) * RθJA RθJA = 98°C/W D = 0.02 0.01 D = 0.01 P(pk) D = 0.005 t2 TJ - TA = P * RθJA(t) Duty Cycle, D = t 1/t2 D = Single Pulse 0.001 0.00001 0.0001 t1 0.001 0.01 0.1 1 t1, PULSE DURATION TIME (s) 10 100 1,000 Fig. 10 Transient Thermal Response Ordering Information (Note 6) Part Number DSS60601MZ4-13 Notes: Case SOT-223 Packaging 2500/Tape & Reel 6. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information YWW ZNS66 DSS60601MZ4 Document number: DS31587 Rev. 2 - 2 ZNS66 = Product Type Marking Code YWW = Date Code Marking Y = Last digit of year (ex: 8 = 2008) WW = Week code 01 - 52 4 of 5 www.diodes.com December 2008 © Diodes Incorporated DSS60601MZ4 NEW PRODUCT Package Outline Dimensions SOT-223 Dim Min Max Typ A 1.55 1.65 1.60 A1 0.010 0.15 0.05 b1 2.90 3.10 3.00 b2 0.60 0.80 0.70 C 0.20 0.30 0.25 D 6.45 6.55 6.50 E 3.45 3.55 3.50 E1 6.90 7.10 7.00 e — — 4.60 e1 — — 2.30 L 0.85 1.05 0.95 Q 0.84 0.94 0.89 All Dimensions in mm A A1 Suggested Pad Layout X1 Y1 C1 Y2 Dimensions X1 X2 Y1 Y2 C1 C2 Value (in mm) 3.3 1.2 1.6 1.6 6.4 2.3 C2 X2 IMPORTANT NOTICE Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages. LIFE SUPPORT Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the President of Diodes Incorporated. DSS60601MZ4 Document number: DS31587 Rev. 2 - 2 5 of 5 www.diodes.com December 2008 © Diodes Incorporated