DSS4320T LOW VCE(SAT) NPN SURFACE MOUNT TRANSISTOR NEW PRODUCT Please click here to visit our online spice models database. Features Mechanical Data • • • • • • • Epitaxial Planar Die Construction Ideal for Medium Power Amplification and Switching Complimentary PNP Type Available (DSS5320T) Lead Free By Design/RoHS Compliant (Note 1) “Green” Device (Note 2) • • • • • Case: SOT-23 Case Material: Molded Plastic, "Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020D Terminals: Finish — Matte Tin annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208 Marking Information: See Page 4 Ordering Information: See Page 4 Weight: 0.008 grams (approximate) C B Maximum Ratings E Device Schematic Top View @TA = 25°C unless otherwise specified Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Repetitive Peak Pulse Current (Note 3) Continuous Collector Current Base Current Symbol VCBO VCEO VEBO ICM ICRP IC IB Value 20 20 5 5 3 2 0.5 Unit V V V A A A A Value 600 209 -55 to +150 Unit mW °C/W °C Thermal Characteristics Characteristic Power Dissipation (Note 4) @ TA = 25°C Thermal Resistance, Junction to Ambient Air (Note 4) @ TA = 25°C Operating and Storage Temperature Range Notes: 1. 2. 3. 4. Symbol PD RθJA TJ, TSTG No purposefully added lead. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. Operated under pulse conditions: Pulse width ≤ 100ms, duty cycle ≤ 0.25. Device mounted on FR-4 PCB; with minimum recommended pad layout. DSS4320T Document number: DS31621 Rev. 2 - 2 1 of 5 www.diodes.com November 2008 © Diodes Incorporated DSS4320T Electrical Characteristics @TA = 25°C unless otherwise specified Characteristic OFF CHARACTERISTICS Collector-Base Cutoff Current ICBO IEBO V(BR)CBO V(BR)CEO V(BR)EBO Min Typ Max Unit ⎯ ⎯ ⎯ 20 20 5 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ 100 50 100 ⎯ ⎯ ⎯ nA μA nA V V V ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ 70 ⎯ 35 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ 70 120 230 210 310 105 1.1 1.2 1.2 mΩ V V V Collector-Emitter Saturation Voltage VCE(SAT) Equivalent On-Resistance RCE(SAT) Base-Emitter Saturation Voltage VBE(SAT) Base-Emitter Turn-on Voltage SMALL SIGNAL CHARACTERISTICS VBE(ON) 220 220 220 200 150 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ Transition Frequency fT 100 ⎯ ⎯ MHz Output Capacitance Cob ⎯ ⎯ 35 pF DC Current Gain hFE ⎯ mV Test Conditions VCB = 20V, IE = 0 VCB = 20V, IE = 0, TA = 150°C VEB = 5V, IC = 0 IC = 100μA IC = 10mA IE = 100μA VCE = 2V, IC = 0.1A VCE = 2V, IC = 0.5A VCE = 2V, IC = 1A VCE = 2V, IC = 2A VCE = 2V, IC = 3A IC = 0.5A, IB = 50mA IC = 1A, IB = 50mA IC = 2A, IB = 40mA IC = 2A, IB = 200mA IC = 3A, IB = 300mA IE = 2A, IB = 200mA IC = 2A, IB = 40mA IC = 3A, IB = 300mA VCE = 2V, IC = 1A VCE = 5V, IC = 100mA, f = 100MHz VCB = 10V, f = 1MHz 5. Measured under pulsed conditions. Pulse width = 300μs. Duty cycle ≤2%. Notes: 800 10 IC, COLLECTOR CURRENT (A) 700 PD , POWER DISSIPATION (W) NEW PRODUCT Emitter-Base Cutoff Current Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage (Note 5) Emitter-Base Breakdown Voltage ON CHARACTERISTICS (Note 5) Symbol 600 500 400 300 200 Pw = 10ms 1 Pw = 100ms 0.1 DC 0.01 RθJA = 209°C/W 100 0 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Fig. 1 Power Dissipation vs. Ambient Temperature (Note 4) DSS4320T Document number: DS31621 Rev. 2 - 2 0.001 0.1 2 of 5 www.diodes.com 1 10 100 VCE, COLLECTOR-EMITTER VOLTAGE (V) Fig. 2 Typical Collector Current vs. Collector-Emitter Voltage November 2008 © Diodes Incorporated DSS4320T 1.8 1,000 VCE = 2V 1.4 IB = 5mA 1.2 hFE, DC CURRENT GAIN IC, COLLECTOR CURRENT (A) TA = 150°C IB = 4mA 1.0 IB = 3mA 0.8 0.6 IB = 2mA T A = 85°C T A = 25°C T A = -55°C 100 0.4 IB = 1mA 0.2 10 0 0 10 100 1,000 10,000 IC, COLLECTOR CURRENT (mA) Fig. 4 Typical DC Current Gain vs. Collector Current VBE(ON), BASE-EMITTER TURN-ON VOLTAGE (V) IC/IB = 10 VCE(SAT), COLLECTOR-EMITTER SATURATION VOLTAGE (V) 1 1 2 3 4 5 VCE, COLLECTOR-EMITTER VOLTAGE (V) Fig. 3 Typical Collector Current vs. Collector-Emitter Voltage 1 0.1 TA = 150°C TA = 85°C T A = 25°C 0.01 T A = -55°C 0.001 1.2 VCE = 2V 1.0 0.8 T A = -55°C 0.6 TA = 25°C 0.4 T A = 85°C TA = 150°C 0.2 0 1 1 10 100 1,000 10,000 IC, COLLECTOR CURRENT (mA) Fig. 5 Typical Collector-Emitter Saturation Voltage vs. Collector Current 10 100 1,000 10,000 IC, COLLECTOR CURRENT (mA) Fig. 6 Typical Base-Emitter Turn-On Voltage vs. Collector Current 1,000 1.2 IC/IB = 10 f = 1MHz 1.0 CAPACITANCE (pF) VBE(SAT), BASE-EMITTER SATURATION VOLTAGE (V) NEW PRODUCT 1.6 0.8 T A = -55°C 0.6 TA = 25°C TA = 85°C 0.4 100 Cibo C obo 10 TA = 150°C 0.2 0 1 1 10 100 1,000 10,000 IC, COLLECTOR CURRENT (mA) Fig. 7 Typical Base-Emitter Saturation Voltage vs. Collector Current DSS4320T Document number: DS31621 Rev. 2 - 2 3 of 5 www.diodes.com 0.1 1 10 100 VR, REVERSE VOLTAGE (V) Fig. 8 Typical Capacitance Characteristics November 2008 © Diodes Incorporated DSS4320T NEW PRODUCT fT, GAIN-BANDWIDTH PRODUCT (MHz) 1,000 100 10 VCE = 5V f = 100MHz 1 0 10 20 30 40 50 60 70 80 90 100 IC, COLLECTOR CURRENT (mA) Fig. 9 Typical Gain-Bandwidth Product vs. Collector Current r(t), TRANSIENT THERMAL RESISTANCE 1 D = 0.7 D = 0.5 D = 0.3 0.1 D = 0.1 D = 0.05 D = 0.9 RθJA(t) = r(t) * RθJA RθJA = 190°C/W D = 0.02 0.01 P(pk) D = 0.01 D = Single Pulse 0.001 0.00001 t1 t2 TJ - TA = P * RθJA(t) Duty Cycle, D = t1/t2 D = 0.005 0.0001 0.001 0.01 0.1 1 t1, PULSE DURATION TIME (s) 10 100 1,000 Fig. 10 Transient Thermal Response Ordering Information (Note 6) Part Number DSS4320T-7 Notes: Case SOT-23 Packaging 3000/Tape & Reel 6. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. ZN4 Date Code Key Year Code Month Code 2008 V Jan 1 2009 W Feb 2 DSS4320T Document number: DS31621 Rev. 2 - 2 Mar 3 YM Marking Information 2010 X Apr 4 ZN4 = Product Type Marking Code YM = Date Code Marking Y = Year (ex: V = 2008) M = Month (ex: 9 = September) 2011 Y May 5 Jun 6 4 of 5 www.diodes.com 2012 Z Jul 7 2013 A Aug 8 Sep 9 2014 B Oct O 2015 C Nov N Dec D November 2008 © Diodes Incorporated DSS4320T Package Outline Dimensions A B C NEW PRODUCT H K M K1 D J F L G SOT-23 Dim Min Max Typ A 0.37 0.51 0.40 B 1.20 1.40 1.30 C 2.30 2.50 2.40 D 0.89 1.03 0.915 F 0.45 0.60 0.535 G 1.78 2.05 1.83 H 2.80 3.00 2.90 J 0.013 0.10 0.05 K 0.903 1.10 1.00 K1 0.400 L 0.45 0.61 0.55 M 0.085 0.18 0.11 0° 8° α All Dimensions in mm Suggested Pad Layout Y Z C X Dimensions Value (in mm) Z 2.9 X 0.8 Y 0.9 C 2.0 E 1.35 E IMPORTANT NOTICE Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages. LIFE SUPPORT Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the President of Diodes Incorporated. DSS4320T Document number: DS31621 Rev. 2 - 2 5 of 5 www.diodes.com November 2008 © Diodes Incorporated