DSS4160V LOW VCE(SAT) NPN SURFACE MOUNT TRANSISTOR NEW PRODUCT Please click here to visit our online spice models database. Features Mechanical Data • • • • • • • • • Epitaxial Planar Die Construction Complementary PNP Type Available (DSS5160V) Low Collector-Emitter Saturation Voltage, VCE(SAT) Surface Mount Package Suited for Automated Assembly Ultra-Small Surface Mount Package Lead Free/RoHS Compliant (Note 1) "Green Device" (Note 2) • • • • • Case: SOT-563 Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020D Terminals: Finish ⎯ Matte Tin annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208 Marking Information: See Page 4 Ordering Information: See Page 4 Weight: 0.003 grams (approximate) 1, 2, 5, 6 6 5 4 4 1 2 3 3 Bottom View Top View Maximum Ratings Device Schematic Pin Out Configuration @TA = 25°C unless otherwise specified Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current - Continuous Peak Pulse Collector Current Base Current (DC) Peak Base Current Symbol VCBO VCEO VEBO IC ICM IB IBM Value 80 60 5 1 2 300 1 Unit V V V A A mA A Symbol PD RθJA TJ, TSTG Value 600 208 -55 to +150 Unit mW °C/W °C Thermal Characteristics Characteristic Power Dissipation (Note 3) @ TA = 25°C Thermal Resistance, Junction to Ambient (Note 3) @ TA = 25°C Operating and Storage Temperature Range Notes: 1. No purposefully added lead. 2. Diode’s Inc.’s “Green” policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. 3. Device mounted on FR-4 PCB with minimum recommended pad layout. DSS4160V Document number: DS31671 Rev. 2 - 2 1 of 5 www.diodes.com March 2009 © Diodes Incorporated DSS4160V Electrical Characteristics @TA = 25°C unless otherwise specified Symbol Min Typ Max Unit V(BR)CBO V(BR)CEO V(BR)EBO 80 60 5 ⎯ ⎯ ⎯ Collector Cutoff Current ICBO ⎯ ⎯ Collector Cutoff Current Emitter Cutoff Current ON CHARACTERISTICS (Note 4) ICES IEBO ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ 100 50 100 100 V V V nA μA nA nA DC Current Gain hFE 250 200 100 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ 110 140 250 mV 250 1.1 0.9 mΩ V V VCE = 5V, IC = 1mA VCE = 5V, IC = 500mA VCE = 5V, IC = 1A IC = 100mA, IB = 1mA IC = 500mA, IB = 50mA IC = 1A, IB = 100mA IC = 1A, IB = 100mA IC = 1A, IB = 50mA VCE = 5V, IC = 1A VCB = 10V, f = 1.0MHz VCE = 10V, IC = 50mA, f = 100MHz Collector-Emitter Saturation Voltage VCE(SAT) Collector-Emitter Saturation Resistance Base-Emitter Saturation Voltage Base-Emitter Turn On Voltage SMALL SIGNAL CHARACTERISTICS Output Capacitance Current Gain-Bandwidth Product SWITCHING CHARACTERISTICS Turn-On Time Delay Time Rise Time Turn-Off Time Storage Time Fall Time RCE(SAT) VBE(SAT) VBE(ON) ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ Cobo fT ⎯ 150 ⎯ ⎯ 10 ⎯ pF MHz ton td tr toff ts tf ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ 68 31 37 430 383 47 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ns ns ns ns ns ns Test Condition IC = 100μA, IE = 0 IC = 10mA, IB = 0 IE = 100μA, IC = 0 VCB = 60V, IE = 0 VCB = 60V, IE = 0, TA = 150°C VCE = 60V, VBE = 0 VEB = 5V, IC = 0 VCC = 10V IC = 0.5A, IB1 = IB2 = 25mA 4. Measured under pulsed conditions. Pulse width = 300μs. Duty cycle ≤2%. Notes: 10 600 500 IC, COLLECTOR CURRENT (A) PD, POWER DISSIPATION (mW) NEW PRODUCT Characteristic OFF CHARACTERISTICS Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage (Note 4) Emitter-Base Breakdown Voltage 400 300 200 RθJA = 208°C/W 100 Pw = 1ms 1 Pw = 10ms 0.1 Pw = 100ms DC 0.01 0.001 0 0 25 50 75 100 125 TA, AMBIENT TEMPERATURE (°C) Fig. 1 Power Dissipation vs. Ambient Temperature (Note 3) DSS4160V Document number: DS31671 Rev. 2 - 2 150 2 of 5 www.diodes.com 0.1 1 10 100 VCE, COLLECTOR-EMITTER VOLTAGE (V) Fig. 2 Typical Collector Current vs. Collector-Emitter Voltage (Note 3) March 2009 © Diodes Incorporated DSS4160V 1 1,000 VCE = 5V VCE(SAT), COLLECTOR-EMITTER SATURATION VOLTAGE (V) TA = 150°C hFE, DC CURRENT GAIN TA = 85°C 600 TA = 25°C 400 T A = -55°C 200 1,000 10 100 10,000 IC, COLLECTOR CURRENT (mA) Fig. 3 Typical DC Current Gain vs. Collector Current VCE = 5V 1.0 0.8 TA = -55°C 0.6 TA = 25°C 0.4 TA = 85°C 0.2 TA = 150°C 0 0.1 1 10 100 1,000 10,000 IC, COLLECTOR CURRENT (mA) Fig. 5 Typical Base-Emitter Turn-On Voltage vs. Collector Current 0.1 T A = 150°C TA = 85°C TA = 25°C 0.01 TA = -55°C 1 10 100 1,000 10,000 IC, COLLECTOR CURRENT (mA) Fig. 4 Typical Collector-Emitter Saturation Voltage vs. Collector Current VBE(SAT), BASE-EMITTER SATURATION VOLTAGE (V) VBE(ON), BASE-EMITTER TURN-ON VOLTAGE (V) 1 1.2 IC/IB = 10 0.001 0.1 0 1.2 IC/IB = 10 1.0 0.8 TA = -55°C 0.6 TA = 25°C 0.4 TA = 85°C 0.2 TA = 150°C 0 0.1 1 1,000 10,000 10 100 IC, COLLECTOR CURRENT (mA) Fig. 6 Typical Base-Emitter Saturation Voltage vs. Collector Current 200 f = 1MHz 160 CAPACITANCE (pF) NEW PRODUCT 800 120 80 C ibo 40 Cobo 0 0.1 1 10 100 VR, REVERSE VOLTAGE (V) Fig. 7 Typical Capacitance Characteristics DSS4160V Document number: DS31671 Rev. 2 - 2 3 of 5 www.diodes.com March 2009 © Diodes Incorporated DSS4160V NEW PRODUCT r(t), TRANSIENT THERMAL RESISTANCE 1 D = 0.7 D = 0.5 D = 0.3 0.1 D = 0.1 D = 0.05 RθJA(t) = r(t) * RθJA RθJA = 178°C/W D = 0.9 D = 0.02 P(pk) 0.01 D = 0.01 t1 t2 TJ - TA = P * RθJA(t) Duty Cycle, D = t1 /t2 D = 0.005 D = Single Pulse 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 t1, PULSE DURATION TIME (s) 100 1,000 10,000 Fig. 8 Transient Thermal Response (Note 3) Ordering Information (Note 5) Part Number DSS4160V-7 Notes: Case SOT-563 Packaging 3000/Tape & Reel 5. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information ZN9 Date Code Key Year Code Month Code 2008 V Jan 1 2009 W Feb 2 ZN9 = Product Type Marking Code YM = Date Code Marking Y = Year (ex: V = 2008) M = Month (ex: 9 = September) YM 2010 X Mar 3 Apr 4 2011 Y May 5 2012 Z Jun 6 Jul 7 2013 A Aug 8 Sep 9 2014 B Oct O 2015 C Nov N Dec D Package Outline Dimensions A B C D G M K SOT-563 Dim Min Max Typ A 0.15 0.30 0.20 B 1.10 1.25 1.20 C 1.55 1.70 1.60 D 0.50 G 0.90 1.10 1.00 H 1.50 1.70 1.60 K 0.55 0.60 0.60 L 0.10 0.30 0.20 M 0.10 0.18 0.11 All Dimensions in mm H L DSS4160V Document number: DS31671 Rev. 2 - 2 4 of 5 www.diodes.com March 2009 © Diodes Incorporated DSS4160V Suggested Pad Layout C2 Z C1 G Y NEW PRODUCT C2 Dimensions Value (in mm) Z 2.2 G 1.2 X 0.375 Y 0.5 C1 1.7 C2 0.5 X IMPORTANT NOTICE Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages. LIFE SUPPORT Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the President of Diodes Incorporated. DSS4160V Document number: DS31671 Rev. 2 - 2 5 of 5 www.diodes.com March 2009 © Diodes Incorporated