DIODES DJT4030P

DJT4030P
LOW VCE(SAT) PNP SURFACE MOUNT TRANSISTOR
NEW PRODUCT
Please click here to visit our online spice models database.
Features
Mechanical Data
•
•
•
•
•
•
•
•
Ideally Suited for Automated Assembly Processes
Complementary NPN Type Available (DJT4031N)
Low Collector-Emitter Saturation Voltage
Ideal for Medium Power Switching or Amplification Applications
Lead Free By Design/RoHS Compliant (Note 1)
"Green" Device (Note 2)
•
•
•
•
•
Case: SOT-223
Case Material: Molded Plastic, "Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020D
Terminals: Finish — Matte Tin annealed over Copper leadframe
(Lead Free Plating). Solderable per MIL-STD-202, Method 208
Marking Information: See Page 4
Ordering Information: See Page 4
Weight: 0.115 grams (approximate)
COLLECTOR
2,4
3 E
C 4
1
BASE
1 B
3
EMITTER
Top View
Maximum Ratings
2 C
Pin Out Configuration
Device Schematic
@TA = 25°C unless otherwise specified
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Base Current
Symbol
VCBO
VCEO
VEBO
ICM
IC
IB
Value
-40
-40
-6
-5
-3
-1
Unit
V
V
V
A
A
A
Value
1.2
104
2
62.5
-55 to +150
Unit
W
°C/W
W
°C/W
°C
Thermal Characteristics
Characteristic
Power Dissipation (Note 3) @ TA = 25°C
Thermal Resistance, Junction to Ambient Air (Note 3) @ TA = 25°C
Power Dissipation (Note 4) @ TA = 25°C
Thermal Resistance, Junction to Ambient Air (Note 4) @ TA = 25°C
Operating and Storage Temperature Range
Notes:
Symbol
PD
RθJA
PD
RθJA
TJ, TSTG
1. No purposefully added lead.
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
3. Device mounted on FR-4 PCB with minimum recommended pad layout.
4. Device mounted on FR-4 PCB with 1 inch2 copper pad layout.
DJT4030P
Document number: DS31590 Rev. 2 - 2
1 of 5
www.diodes.com
March 2009
© Diodes Incorporated
DJT4030P
Electrical Characteristics
@TA = 25°C unless otherwise specified
Symbol
Min
Typ
Max
Unit
V(BR)CBO
V(BR)CEO
V(BR)EBO
-40
-40
-6
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
-100
-50
-100
V
V
V
nA
μA
nA
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
400
⎯
-150
-200
-500
167
-1.0
-1.0
mΩ
V
V
Collector-Base Cutoff Current
ICBO
Emitter-Base Cutoff Current
ON CHARACTERISTICS (Note 5)
IEBO
DC Current Gain
hFE
Collector-Emitter Saturation Voltage
VCE(SAT)
Equivalent On-Resistance
Base-Emitter Saturation Voltage
Base-Emitter Turn-on Voltage
SMALL SIGNAL CHARACTERISTICS
RCE(SAT)
VBE(SAT)
VBE(ON)
220
200
100
⎯
⎯
⎯
⎯
⎯
⎯
fT
⎯
150
⎯
MHz
Cobo
Cibo
⎯
⎯
35
150
⎯
⎯
pF
pF
ton
td
tr
toff
ts
tf
⎯
⎯
⎯
⎯
⎯
⎯
53
12
41
180
146
34
⎯
⎯
⎯
⎯
⎯
⎯
ns
ns
ns
ns
ns
ns
Transition Frequency
Output Capacitance
Input Capacitance
SWITCHING CHARACTERISTICS
Turn-On Time
Delay Time
Rise Time
Turn-Off Time
Storage Time
Fall Time
⎯
mV
Test Conditions
IC = -100μA
IC = -10mA
IE = -50μA
VCB = -40V, IE = 0
VCB = -40V, IE = 0, TA = 150°C
VEB = -6V, IC = 0
VCE = -1V, IC = -0.5A
VCE = -1V, IC = -1A
VCE = -1V, IC = -3A
IC = -0.5A, IB = -5mA
IC = -1A, IB = -10mA
IC = -3A, IB = -0.3A
IE = -3A, IB = -0.3A
IC = -1A, IB = -0.1A
VCE = -2V, IC = -1A
VCE = -10V, IC = -100mA,
f = 100MHz
VCB = -10V, f = 1MHz
VCB = -5V, f = 1MHz
VCC = -10V, IC = -2A,
IB1 = -200mA
VCC = -10V, IC = -2A,
IB1 = IB2 = -200mA
5. Measured under pulsed conditions. Pulse width = 300μs. Duty cycle ≤2%.
Notes:
10
IC, COLLECTOR CURRENT (A)
2.0
PD, POWER DISSIPATION (W)
NEW PRODUCT
Characteristic
OFF CHARACTERISTICS (Note 5)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
1.6
1.2
(Note 4)
0.8
(Note 3)
0.4
0
0
25
50
75
100
125
150
TA, AMBIENT TEMPERATURE (°C)
Fig. 1 Power Dissipation vs. Ambient Temperature
DJT4030P
Document number: DS31590 Rev. 2 - 2
Pw = 1ms
1
DC
Pw = 100ms
Pw = 10ms
0.1
0.01
0.1
2 of 5
www.diodes.com
1
10
100
VCE, COLLECTOR-EMITTER VOLTAGE (V)
Fig. 2 Typical Collector Current
vs. Collector-Emitter Voltage (Note 3)
March 2009
© Diodes Incorporated
DJT4030P
1
800
IC/IB = 10
-VCE(SAT), COLLECTOR-EMITTER
SATURATION VOLTAGE (V)
hFE, DC CURRENT GAIN
600
T A = 150°C
T A = 85°C
400
T A = 25°C
200
T A = -55°C
0.1
T A = 150°C
T A = 85°C
TA = -55°C
1
10
100
1,000
10,000
-IC, COLLECTOR CURRENT (mA)
Fig. 3 Typical DC Current Gain vs. Collector Current
1.0
VCE = -2V
0.8
0.6
TA = -55°C
TA = 25°C
0.4
TA = 85°C
0.2
T A = 150°C
0
0.1
1
10
100
1,000
-IC, COLLECTOR CURRENT (mA)
Fig. 5 Typical Base-Emitter Turn-On Voltage
vs. Collector Current
1
10
100
1,000
10,000
-IC, COLLECTOR CURRENT (mA)
Fig. 4 Typical Collector-Emitter Saturation Voltage
vs. Collector Current
-VBE(SAT), BASE-EMITTER SATURATION VOLTAGE (V)
-VBE(ON), BASE-EMITTER TURN-ON VOLTAGE (V)
TA = 25°C
0.01
0.001
0
1.0
IC/IB = 10
0.8
TA = -55°C
0.6
T A = 25°C
0.4
TA = 85°C
0.2
TA = 150°C
0
0.1
1
10
100
1,000
10,000
-IC, COLLECTOR CURRENT (mA)
Fig. 6 Typical Base-Emitter Saturation Voltage
vs. Collector Current
1,000
f = 1MHz
CAPACITANCE (pF)
NEW PRODUCT
VCE = -1V
Cibo
100
Cobo
10
0.1
1
10
100
VR, REVERSE VOLTAGE (V)
Fig. 7 Typical Capacitance Characteristics
DJT4030P
Document number: DS31590 Rev. 2 - 2
3 of 5
www.diodes.com
March 2009
© Diodes Incorporated
DJT4030P
NEW PRODUCT
r(t), TRANSIENT THERMAL RESISTANCE
1
D = 0.7
D = 0.5
D = 0.3
0.1
D = 0.1
D = 0.05
RθJA(t) = r(t) * RθJA
RθJA = 92°C/W
D = 0.9
D = 0.02
0.01
P(pk)
D = 0.01
t1
t2
T J - T A = P * R θJA(t)
Duty Cycle, D = t1/t2
D = 0.005
D = Single Pulse
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
t1, PULSE DURATION TIME (s)
100
1,000
10,000
Fig. 8 Transient Thermal Response (Note 3)
Ordering Information
(Note 6)
Part Number
DJT4030P-13
Notes:
Case
SOT-223
Packaging
2500/Tape & Reel
6. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
YWW
ZPS34
ZPS34 = Product Type Marking Code
YWW = Date Code Marking
Y = Last digit of year (ex: 8 = 2008)
WW = Week code 01 - 52
Package Outline Dimensions
SOT-223
Dim Min Max Typ
A
1.55 1.65 1.60
A1 0.010 0.15 0.05
b1
2.90 3.10 3.00
b2
0.60 0.80 0.70
C
0.20 0.30 0.25
D
6.45 6.55 6.50
E
3.45 3.55 3.50
E1
6.90 7.10 7.00
e
—
—
4.60
e1
—
—
2.30
L
0.85 1.05 0.95
Q
0.84 0.94 0.89
All Dimensions in mm
A
A1
DJT4030P
Document number: DS31590 Rev. 2 - 2
4 of 5
www.diodes.com
March 2009
© Diodes Incorporated
DJT4030P
Suggested Pad Layout
X1
NEW PRODUCT
Y1
C1
Y2
Dimensions
X1
X2
Y1
Y2
C1
C2
Value (in mm)
3.3
1.2
1.6
1.6
6.4
2.3
C2
X2
IMPORTANT NOTICE
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product
described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall
assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website,
harmless against all damages.
LIFE SUPPORT
Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written
approval of the President of Diodes Incorporated.
DJT4030P
Document number: DS31590 Rev. 2 - 2
5 of 5
www.diodes.com
March 2009
© Diodes Incorporated