A Product Line of Diodes Incorporated DMN6068SE ADVANCE INFORMATION 60V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS Features and Benefits ID RDS(on) TA = 25°C 68mΩ @ VGS= 10V 100% Unclamped Inductive Switch (UIS) test in production • Low on-resistance • Fast switching speed 5.6A • “Green” component and RoHS compliant (Note 1) 4.7A • Qualified to AEC-Q101 Standards for High Reliability 60V 100mΩ @ VGS= 4.5V • Mechanical Data Description and Applications This MOSFET has been designed to minimize the on-state resistance and yet maintain superior switching performance, making it ideal for high efficiency power management applications. • Motor control • Transformer driving switch • DC-DC Converters • Power management functions • Uninterrupted power supply • Case: SOT223 • Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 (Note 1) • Moisture Sensitivity: Level 1 per J-STD-020 • Terminals Connections: See diagram below • Terminals: Finish - Matte Tin annealed over Copper lead frame. Solderable per MIL-STD-202, Method 208 • Weight: 0.112 grams (approximate) D SOT223 G S Pin Out - Top View Top View Equivalent Circuit Ordering Information (Note 1) Product DMN6068SE-13 Notes: Marking N6068 Reel size (inches) 13 Tape width (mm) 12 Quantity per reel 4,000 1. Diodes, Inc. defines “Green” products as those which are RoHS compliant and contain no halogens or antimony compounds; further information about Diodes Inc.’s “Green” Policy can be found on our website. For packaging details, go to our website. Marking Information YWW N6068 DMN6068SE Document Number DS32033 Rev. 2 - 2 = Manufacturer’s Marking N6068 = Product Type Marking Code YWW = Date Code Marking Y = Year (ex: 9 = 2009) WW = Week (01 - 53) 1 of 9 www.diodes.com January 2011 © Diodes Incorporated A Product Line of Diodes Incorporated ADVANCE INFORMATION DMN6068SE Maximum Ratings @TA = 25°C unless otherwise specified Characteristic Drain-Source voltage Gate-Source voltage Single Pulsed Avalanche Energy Single Pulsed Avalanche Current Continuous Drain current VGS = 10V Pulsed Drain current VGS= 10V Continuous Source current (Body diode) Pulsed Source current (Body diode) (Note 2) (Note 7) (Note 7) (Note 4) TA = 70°C (Note 4) (Note 3) (Note 5) (Note 4) (Note 5) Symbol VDSS VGS EAS IAS ID IDM IS ISM Value 60 ±20 37.5 5.0 5.6 4.5 4.1 20.8 4.9 20.8 Unit V V mJ A Value 2.0 16.0 3.7 29.5 62.5 34 11.5 -55 to 150 Unit A A A A Thermal Characteristics @TA = 25°C unless otherwise specified Characteristic Power dissipation Linear derating factor Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Lead Operating and storage temperature range Notes: Symbol (Note 3) PD (Note 4) (Note 3) (Note 4) (Note 6) RθJA RθJL TJ, TSTG W mW/°C °C/W °C 2. AEC-Q101 VGS maximum is ±16V. 3. For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 2oz copper, in still air conditions; the device is measured when operating in a steady-state condition. 4. Same as note (3), except the device is measured at t ≤ 10 sec. 5. Same as note (3), except the device is pulsed with D= 0.02 and pulse width 300 µs. The pulse current is limited by the maximum junction temperature. 6. Thermal resistance from junction to solder-point (at the end of the drain lead). 7. UIS in production with L = 3.0mH, IAS = 5.0A, RG = 25Ω, VDD=50V, starting TJ = 25°C. DMN6068SE Document Number DS32033 Rev. 2 - 2 2 of 9 www.diodes.com January 2011 © Diodes Incorporated A Product Line of Diodes Incorporated Thermal Characteristics Max Power Dissipation (W) ID Drain Current (A) RDS(on) 10 Limited 1 DC 1s 100ms 100m 10ms 1ms Single Pulse T amb=25°C 10m 100m 100µs 1 10 VDS Drain-Source Voltage (V) 2.0 1.6 1.2 0.8 0.4 0.0 0 20 40 60 80 100 120 140 160 Temperature (°C) Safe Operating Area Derating Curve 70 Tamb=25°C 60 Maximum Power (W) Thermal Resistance (°C/W) ADVANCE INFORMATION DMN6068SE 50 40 D=0.5 30 20 Single Pulse D=0.2 D=0.05 10 Single Pulse Tamb=25°C 100 10 D=0.1 0 100µ 1m 10m 100m 1 10 100 1k 1 100µ Pulse Width (s) Document Number DS32033 Rev. 2 - 2 10m 100m 1 10 100 1k Pulse Width (s) Transient Thermal Impedance DMN6068SE 1m Pulse Power Dissipation 3 of 9 www.diodes.com January 2011 © Diodes Incorporated A Product Line of Diodes Incorporated ADVANCE INFORMATION DMN6068SE Electrical Characteristics @TA = 25°C unless otherwise specified Characteristic OFF CHARACTERISTICS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS Gate Threshold Voltage Symbol Min Typ Max Unit BVDSS IDSS IGSS 60 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ 0.5 ±100 V μA nA ID = 250μA, VGS= 0V VDS= 60V, VGS= 0V VGS= ±20V, VDS= 0V VGS(th) 1.0 ⎯ V Static Drain-Source On-Resistance (Note 8) RDS (ON) ⎯ ⎯ gfs VSD trr Qrr ⎯ ⎯ S V ns nC ID= 250μA, VDS= VGS VGS= 10V, ID= 12A VGS= 4.5V, ID= 6A VDS= 15V, ID= 12A IS= 12A, VGS= 0V ⎯ 19.7 0.98 145 929 3.0 0.068 0.100 ⎯ 1.15 ⎯ ⎯ Ciss Coss Crss Qg Qg Qgs Qgd tD(on) tr tD(off) tf ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ 502 45.7 27.1 5.55 10.3 1.6 3.5 3.6 10.8 11.9 8.7 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ pF pF pF nC nC nC nC ns ns ns ns Forward Transconductance (Notes 8 & 9) Diode Forward Voltage (Note 8) Reverse recovery time (Note 9) Reverse recovery charge (Note 9) DYNAMIC CHARACTERISTICS (Note 9) Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge (Note 10) Total Gate Charge (Note 10) Gate-Source Charge (Note 10) Gate-Drain Charge(Note 10) Turn-On Delay Time (Note 10) Turn-On Rise Time (Note 10) Turn-Off Delay Time (Note 10) Turn-Off Fall Time (Note 10) Notes: Ω Test Condition IS= 12A, di/dt= 100A/μs VDS= 30V, VGS= 0V f= 1MHz VGS= 4.5V VGS= 10V VDS= 30V ID= 12A VDD= 30V, VGS= 10V ID= 12A, RG ≅ 6.0Ω 8. Measured under pulsed conditions. Pulse width ≤ 300μs; duty cycle ≤ 2% 9. For design aid only, not subject to production testing. 10. Switching characteristics are independent of operating junction temperatures. DMN6068SE Document Number DS32033 Rev. 2 - 2 4 of 9 www.diodes.com January 2011 © Diodes Incorporated A Product Line of Diodes Incorporated Typical Characteristics 10V T = 150°C 5V 10 4.5V ID Drain Current (A) ID Drain Current (A) T = 25°C 4V 1 3.5V VGS 0.1 3V 0.01 3.5V 1 3V 2.5V 0.1 VGS 2V 1 10 0.1 T = 150°C T = 25°C 0.01 1E-3 2 3 4 5 VGS Gate-Source Voltage (V) Typical Transfer Characteristics Normalised RDS(on) and VGS(th) 1 1 10 Output Characteristics VDS = 10V 0.1 1 VDS Drain-Source Voltage (V) Output Characteristics 2.0 VGS = 10V 1.8 ID = 12A 1.6 RDS(on) 1.4 1.2 1.0 0.8 VGS = VDS 0.6 ID = 250uA 0.4 -50 0 VGS(th) 50 100 150 Tj Junction Temperature (°C) Normalised Curves v Temperature 100 3V VGS 3.5V 10 4V 1 4.5V 5V 0.1 10V T = 25°C 0.01 0.01 0.1 1 10 ID Drain Current (A) On-Resistance v Drain Current DMN6068SE Document Number DS32033 Rev. 2 - 2 ISD Reverse Drain Current (A) ID Drain Current (A) 4.5V 4V 10 VDS Drain-Source Voltage (V) 10 10V 0.01 0.1 RDS(on) Drain-Source On-Resistance (Ω) ADVANCE INFORMATION DMN6068SE 10 T = 150°C 1 T = 25°C 0.1 Vgs = 0V 0.01 0.2 0.4 0.6 0.8 1.0 VSD Source-Drain Voltage (V) Source-Drain Diode Forward Voltage 5 of 9 www.diodes.com January 2011 © Diodes Incorporated A Product Line of Diodes Incorporated Typical Characteristics - continued VGS Gate-Source Voltage (V) C Capacitance (pF) 10 VGS = 0V 600 f = 1MHz CISS 400 COSS CRSS 200 0 0.1 1 10 8 6 4 VDS = 30V 2 ID = 12A 0 0 VDS - Drain - Source Voltage (V) 2 4 6 8 10 Q - Charge (nC) Capacitance v Drain-Source Voltage Gate-Source Voltage v Gate Charge 40 20 Starting T J = 25°C 15 30 10 20 5 10 100µ 1m EAS Avalanche Energy (mJ) IAS Avalanche Current (A) ADVANCE INFORMATION DMN6068SE L Inductor (H) Single-Pulsed Avalanche Rating DMN6068SE Document Number DS32033 Rev. 2 - 2 6 of 9 www.diodes.com January 2011 © Diodes Incorporated A Product Line of Diodes Incorporated ADVANCE INFORMATION DMN6068SE Test Circuits Current regulator QG 50k 12V VG Q GS Same as D.U.T Q GD V DS IG D.U.T ID V GS Charge Basic gate charge waveform Gate charge test circuit V DS 90% RD V GS V DS RG VDD 10% V GS td(on) tr t(on) td(off) tr t(on) Switching time waveforms DMN6068SE Document Number DS32033 Rev. 2 - 2 Switching time test circuit 7 of 9 www.diodes.com January 2011 © Diodes Incorporated A Product Line of Diodes Incorporated ADVANCE INFORMATION DMN6068SE Package Outline Dimensions DIM A A1 A2 b b2 C Millimeters Min Max 1.80 0.02 0.10 1.55 1.65 0.66 0.84 2.90 3.10 0.23 0.33 Inches Min Max 0.071 0.0008 0.004 0.0610 0.0649 0.026 0.033 0.114 0.122 0.009 0.013 DIM D e e1 E E1 L Millimeters Min Max 6.30 6.70 2.30 BSC 4.60 BSC 6.70 7.30 3.30 3.70 0.90 - Inches Min Max 0.248 0.264 0.0905 BSC 0.181 BSC 0.264 0.287 0.130 0.146 0.355 - Suggested Pad Layout 3.8 0.15 2.0 0.079 6.3 0.248 2.0 0.079 1.5 0.059 DMN6068SE Document Number DS32033 Rev. 2 - 2 2.3 0.091 8 of 9 www.diodes.com mm inches January 2011 © Diodes Incorporated A Product Line of Diodes Incorporated ADVANCE INFORMATION DMN6068SE IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. 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