A Product Line of Diodes Incorporated ADVANCE INFORMATION ZXMN6A08E6 60V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS Features and Benefits ID RDS(on) TA = 25°C • Low on-resistance • Fast switching speed • Low gate drive 80mΩ @ VGS=10V 3.5A • Low threshold 150mΩ @ VGS=4.5V 2.5A • “Green” component and RoHS compliant (Note 1) • Qualified to AEC-Q101 Standards for High Reliability 100V Description and Applications Mechanical Data This MOSFET has been designed to minimize the on-state resistance and yet maintain superior switching performance, making it ideal for high efficiency power management applications. • Case: SOT23-6 • Case Material: Molded Plastic, UL Flammability Classification Rating 94V-0 • DC-DC Converters • Moisture Sensitivity: Level 1 per J-STD-020 • Power management functions • • Terminals: Finish - Matte Tin annealed over Copper lead frame. Solderable per MIL-STD-202, Method 208 Disconnect switches • • Weight: 0.018 grams (approximate) Motor control SOT23-6 D D D D G S D G S Equivalent Circuit Pin Out - Top View Top View Ordering Information (Note 1) Product ZXMN6A08E6TA Notes: Marking See below Reel size (inches) 7 Tape width (mm) 8 Quantity per reel 3,000 1. Diodes, Inc. defines “Green” products as those which are RoHS compliant and contain no halogens or antimony compounds; further information about Diodes Inc.’s “Green” Policy can be found on our website. For packaging details, go to our website. Marking Information 6A8 ZXMN6A08E6 Document Number DS33376 Rev. 5 - 2 6A8 = Product Type Marking Code 1 of 8 www.diodes.com August 2010 © Diodes Incorporated A Product Line of Diodes Incorporated ADVANCE INFORMATION ZXMN6A08E6 Maximum Ratings @TA = 25°C unless otherwise specified Characteristic Symbol VDSS VGS Drain-Source voltage Gate-Source voltage Continuous Drain current VGS = 10V Pulsed Drain current VGS= 10V Continuous Source current (Body diode) Pulsed Source current (Body diode) (Note 3) TA = 70°C (Note 3) (Note 2) (Note 4) (Note 3) (Note 4) ID IDM IS ISM Value 60 ±20 3.5 2.8 2.8 16 2.6 16 Unit V V Value 1.1 8.8 1.7 13.6 113 73 -55 to 150 Unit A A A A Thermal Characteristics @TA = 25°C unless otherwise specified Characteristic Power dissipation Linear derating factor Thermal Resistance, Junction to Ambient Operating and storage temperature range Notes: Symbol (Note 2) PD (Note 3) (Note 1) (Note 3) RθJA TJ, TSTG W mW/°C °C/W °C 2. For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device is measured when operating in a steady-state condition. 3. Same as note (2), except the device is measured at t ≤ 10 sec. 4. Same as note (2), except the device is pulsed with D = 0.02 and pulse width 300µs. The pulse current is limited by the maximum junction temperature. ZXMN6A08E6 Document Number DS33376 Rev. 5 - 2 2 of 8 www.diodes.com August 2010 © Diodes Incorporated A Product Line of Diodes Incorporated ID Drain Current (A) 10 Max Power Dissipation (W) Thermal Characteristics RDS(on) Limited 1 DC 1s 100ms 100m 10ms 10m Single Pulse T amb=25°C 100m 1ms 100µs 1 10 1.2 25mm x 25mm 1oz FR4 1.0 0.8 0.6 0.4 0.2 0.0 0 20 VDS Drain-Source Voltage (V) 40 60 80 100 120 140 160 Temperature (°C) Derating Curve Safe Operating Area 120 Tamb=25°C 100 Maximum Power (W) Thermal Resistance (°C/W) ADVANCE INFORMATION ZXMN6A08E6 80 60 D=0.5 40 D=0.2 Single Pulse 20 D=0.05 D=0.1 100µ 1m 10m 100m 1 10 100 1k Pulse Width (s) Document Number DS33376 Rev. 5 - 2 10 1 100µ 1m 10m 100m 1 10 100 1k Pulse Width (s) Transient Thermal Impedance ZXMN6A08E6 Single Pulse Tamb=25°C 100 3 of 8 www.diodes.com Pulse Power Dissipation August 2010 © Diodes Incorporated A Product Line of Diodes Incorporated ADVANCE INFORMATION ZXMN6A08E6 Electrical Characteristics @TA = 25°C unless otherwise specified Characteristic OFF CHARACTERISTICS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS Gate Threshold Voltage Symbol Min Typ Max Unit BVDSS IDSS IGSS 60 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ 0.5 ±100 V μA nA ID = 250μA, VGS = 0V VDS = 60V, VGS = 0V VGS = ±20V, VDS = 0V VGS(th) 1.0 RDS (ON) ⎯ gfs VSD trr Qrr ⎯ ⎯ ⎯ ⎯ ⎯ 0.080 0.150 ⎯ 1.2 ⎯ ⎯ V Static Drain-Source On-Resistance (Note 5) ⎯ 0.067 0.100 6.6 0.88 19.2 30.3 S V ns nC ID = 250μA, VDS = VGS VGS = 10V, ID = 4.8A VGS = 4.5V, ID = 4.2A VDS = 15V, ID = 4.8A IS = 4A, VGS = 0V, TJ = 25°C IF = 1.4A, di/dt = 100A/μs, TJ = 25°C Ciss Coss Crss Qg Qg Qgs Qgd tD(on) tr tD(off) tf ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ 459 44.2 24.1 3.7 5.8 1.4 1.9 2.6 2.1 12.3 4.6 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ pF pF pF nC nC nC nC ns ns ns ns Forward Transconductance (Notes 5 & 6) Diode Forward Voltage (Note 5) Reverse recovery time (Note 6) Reverse recovery charge (Note 6) DYNAMIC CHARACTERISTICS (Note 6) Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge (Note 7) Total Gate Charge (Note 7) Gate-Source Charge (Note 7) Gate-Drain Charge (Note 7) Turn-On Delay Time (Note 7) Turn-On Rise Time (Note 7) Turn-Off Delay Time (Note 7) Turn-Off Fall Time (Note 7) Notes: Ω Test Condition VDS = 40V, VGS = 0V f = 1MHz VGS = 4.5V VGS = 10V VDS = 30V ID = 1.4A VDD = 30V, VGS = 10V ID = 1.5A, RG ≅ 6.0Ω 5. Measured under pulsed conditions. Pulse width ≤ 300μs; duty cycle ≤ 2% 6. For design aid only, not subject to production testing. 7. Switching characteristics are independent of operating junction temperatures. ZXMN6A08E6 Document Number DS33376 Rev. 5 - 2 4 of 8 www.diodes.com August 2010 © Diodes Incorporated A Product Line of Diodes Incorporated ZXMN6A08E6 ID Drain Current (A) 10V 5V 4.5V 4V 3.5V 1 3V VGS 0.1 0.1 1 ID Drain Current (A) T = 25°C 10 10 2.5V 0.1 0.1 Normalised RDS(on) and VGS(th) ID Drain Current (A) 0.1 5 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 -50 VGS Gate-Source Voltage (V) 4V 4.5V 1 VGS T = 25°C 5V 0.1 7V 10V 0.1 1 ID Drain Current (A) 10 On-Resistance v Drain Current ZXMN6A08E6 Document Number DS33376 Rev. 5 - 2 ID = 4.8A RDS(on) VGS(th) VGS = VDS ID = 250uA 0 50 100 150 Normalised Curves v Temperature ISD Reverse Drain Current (A) 3.5V VGS = 10V Tj Junction Temperature (°C) Typical Transfer Characteristics 3V 10 Output Characteristics T = 25°C 4 1 VDS Drain-Source Voltage (V) 1 3 VGS 2V 10 T = 150°C 2 3V 0.01 VDS = 10V 0.01 5V 1 Output Characteristics 10 10V T = 150°C 4V 3.5V VDS Drain-Source Voltage (V) RDS(on) Drain-Source On-Resistance (Ω) ADVANCE INFORMATION Typical Characteristics 10 T = 150°C 1 T = 25°C 0.1 VGS = 0V 0.01 0.2 0.4 0.6 0.8 1.0 1.2 VSD Source-Drain Voltage (V) Source-Drain Diode Forward Voltage 5 of 8 www.diodes.com August 2010 © Diodes Incorporated A Product Line of Diodes Incorporated ZXMN6A08E6 VGS = 0V 600 f = 1MHz 400 CISS COSS CRSS 200 0 1 10 VGS Gate-Source Voltage (V) C Capacitance (pF) ADVANCE INFORMATION Typical Characteristics – continued 10 8 6 4 VDS = 15V 2 ID = 1.4A 0 VDS - Drain - Source Voltage (V) Capacitance v Drain-Source Voltage 0 1 2 3 4 5 Q - Charge (nC) 6 Gate-Source Voltage v Gate Charge Test Circuits Current regulator QG 50k 12V VG Q GS Same as D.U.T Q GD V DS IG D.U.T ID V GS Charge Basic gate charge waveform Gate charge test circuit V DS 90% RD V GS V DS RG VDD 10% V GS td(on) tr t(on) td(off) tr t(on) Switching time waveforms ZXMN6A08E6 Document Number DS33376 Rev. 5 - 2 Switching time test circuit 6 of 8 www.diodes.com August 2010 © Diodes Incorporated A Product Line of Diodes Incorporated ZXMN6A08E6 ADVANCE INFORMATION Package Outline Dimensions DIM Millimeters Inches A Min 0.90 Max 1.45 Min 0.354 Max 0.0570 A1 0.00 0.15 0.00 0.0059 A2 0.90 1.30 0.0354 0.0511 b 0.20 0.50 0.0078 0.0196 C 0.09 0.26 0.0035 0.0102 D 2.70 3.10 0.1062 0.1220 E 2.20 3.20 0.0866 0.1181 E1 1.30 1.80 0.0511 0.0708 L 0.10 0.60 0.0039 0.0236 e 0.95 REF 0.0374 REF e1 1.90 REF 0.0748 REF θ ZXMN6A08E6 Document Number DS33376 Rev. 5 - 2 0° 30° 7 of 8 www.diodes.com 0° 30° August 2010 © Diodes Incorporated A Product Line of Diodes Incorporated ZXMN6A08E6 ADVANCE INFORMATION Suggested Pad Layout 0.95 0.037 1.06 0.042 2.2 0.087 0.65 0.026 mm inches IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright © 2010, Diodes Incorporated www.diodes.com ZXMN6A08E6 Document Number DS33376 Rev. 5 - 2 8 of 8 www.diodes.com August 2010 © Diodes Incorporated