Data Sheet - Diodes Incorporated

A Product Line of
Diodes Incorporated
ZXMP10A18G
ADVANCE INFORMATION
100V P-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
Features and Benefits
ID max
BVDSS
RDS(on) max
TA = +25°C
150mΩ @ VGS = -10V
-3.7A
190mΩ @ VGS = -6V
-3.3A
-100V





Low On-Resistance
Fast Switching Speed
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Description and Applications
Mechanical Data
This MOSFET is designed to minimize the on-state resistance and yet
maintain superior switching performance, making it ideal for high
efficiency power management applications.








Motor Control
DC-DC Converters
Power Management Functions
Relay and Solenoid Driving

Case: SOT223
Case Material: Molded Plastic, UL Flammability Classification
Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish - Matte Tin Solderable per MIL-STD-202,
Method 208
Weight: 0.112 grams (Approximate)
SOT223
D
G
S
Pin Out - Top View
Top View
Equivalent Circuit
Ordering Information (Note 4)
Product
ZXMP10A18GTA
Note:
Marking
ZXMP10A18
Reel size (inches)
7
Tape width (mm)
12
Quantity per reel
1,000
1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http”//www.diodes.com/products/packages.html
Marking Information
SOT223
ZXMP10A18 =Product Type Marking Code
YWW = Date Code Marking
Y or Y= Last Digit of Year (ex: 5 = 2015)
WW or WW = Week Code (01 - 53)
ZXMP10A18G
Document Number DS33598 Rev. 3 - 2
1 of 8
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© Diodes Incorporated
A Product Line of
Diodes Incorporated
ZXMP10A18G
Maximum Ratings (@TA = +25°C unless otherwise specified.)
ADVANCE INFORMATION
Characteristic
Symbol
VDSS
VGSS
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
VGS = 10V
Pulsed Drain Current
VGS = 10V
Continuous Source Current (Body diode)
Pulsed Source Current (Body diode)
(Note 6)
TA = +70°C (Note 6)
(Note 5)
(Note 7)
(Note 6)
(Note 7)
ID
IDM
IS
ISM
Value
-100
20
-3.7
-3.0
-2.6
-16.5
-5.3
-16.5
Unit
V
V
Value
2.0
16
3.9
31
62.5
32.2
7.65
-55 to 150
Unit
A
A
A
A
Thermal Characteristics (@TA = +25°C unless otherwise specified.)
Characteristic
Power Dissipation
Linear Derating Factor
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Lead
Operating and Storage Temperature Range
Notes:
Symbol
(Note 5)
PD
(Note 6)
(Note 5)
(Note 6)
(Note 8)
RJA
RJL
TJ, TSTG
W
mW/°C
°C/W
°C
5. For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device is
measured when operating in a steady-state condition.
6. Same as Note 5, except the device is measured at t  10 seconds.
7. Same as Note 5, except the device is pulsed with D = 0.02 and pulse width 300µs. The pulse current is limited by the maximum junction temperature.
8. Thermal resistance from junction to solder-point (at the end of the drain lead).
ZXMP10A18G
Document Number DS33598 Rev. 3 - 2
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A Product Line of
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ZXMP10A18G
DS(on)
10 Limited
1
DC
1s
100m
100ms
10ms
1ms
Single Pulse
Tamb= 25° C
10m
1
100µs
10
100
Max Power Dissipation (W)
-ID Drain Current (A)
R
2.0
1.6
1.2
0.8
0.4
0.0
0
20
-VDS Drain-Source Voltage (V)
40
60
80
100 120 140 160
Temperature (° C)
Safe Operating Area
Derating Curve
70
Tamb= 25° C
60
Maximum Power (W)
Thermal Resistance (° C/W)
ADVANCE INFORMATION
Thermal Characteristics
50
40
D= 0.5
30
20
Single Pulse
D= 0.2
D= 0.05
10
Single Pulse
Tamb= 25° C
100
10
D= 0.1
0
100µ
1m
10m 100m
1
10
100
1k
Pulse Width (s)
Document Number DS33598 Rev. 3 - 2
1m
10m 100m
1
10
100
1k
Pulse Width (s)
Transient Thermal Impedance
ZXMP10A18G
1
100µ
Pulse Power Dissipation
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© Diodes Incorporated
A Product Line of
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ZXMP10A18G
ADVANCE INFORMATION
Electrical Characteristics (@TA = +25°C unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS
Gate Threshold Voltage
Symbol
Min
Typ
Max
Unit
BVDSS
IDSS
IGSS
-100






-1
100
V
µA
nA
ID = -250µA, VGS = 0V
VDS = -100V, VGS = 0V
VGS = 20V, VDS = 0V
VGS(th)
-2.0

V
Static Drain-Source On-Resistance (Note 9)
RDS (ON)


Forward Transconductance (Notes 9 & 10)
Diode Forward Voltage (Note 9)
Reverse Recovery Time (Note 10)
Reverse Recovery Charge (Note 10)
DYNAMIC CHARACTERISTICS (Note 10)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge (Note 11)
Gate-Source Charge (Note 11)
Gate-Drain Charge (Note 11)
Turn-On Delay Time (Note 11)
Turn-On Rise Time (Note 11)
Turn-Off Delay Time (Note 11)
Turn-Off Fall Time (Note 11)
gfs
VSD
trr
Qrr




6.0
-0.85
49
107
-4.0
150
190

-0.95


ID = -250µA, VDS = VGS
VGS = -10V, ID = -2.8A
VGS = -6V, ID = -2.4A
VDS = -15V, ID = -2.8A
IS = -3.5A, VGS = 0V, TJ = +25°C
IS = -2.8A, di/dt = 100A/µs,
TJ = +25°C
Ciss
Coss
Crss
Qg
Qgs
Qgd
tD(on)
tr
tD(off)
tf










1055
90
76
26.9
3.9
10.2
4.6
6.8
33.9
17.9










Notes:
mΩ
S
V
ns
nC
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
Test Condition
VDD = -50V, VGS = 0V
f = 1MHz
VGS = -10V, VDS = -50V
ID = -2.8A
VDD = -50V, VGS = -10V
ID = -1A, RG  6.0Ω
9. Measured under pulsed conditions. Pulse width  300s; duty cycle  2%
10. For design aid only, not subject to production testing.
11. Switching characteristics are independent of operating junction temperatures.
ZXMP10A18G
Document Number DS33598 Rev. 3 - 2
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A Product Line of
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ZXMP10A18G
10
5V
4.5V
4V
1
-VGS
0.1
3.5V
0.1
1
5V
4.5V
4V
1
3.5V
0.1
3V
-VGS
10
0.1
-VDS Drain-Source Voltage (V)
Normalised RDS(on) and VGS(th)
-ID Drain Current (A)
T = 25°C
1
-VDS = 10V
4
1.8
1.2
1.0
0.6
4.5V
5V
1
10V
0.1
-ID
1
10
Document Number DS33598 Rev. 3 - 2
50
100
150
10
T = 150°C
1
T = 25°C
0.1
0.01
1E-3
0.2
0.4
0.6
0.8
1.0
-VSD Source-Drain Voltage (V)
Drain Current (A)
On-Resistance v Drain Current
ZXMP10A18G
0
Normalised Curves v Temperature
4V
0.1
VGS = VDS
ID = -250uA
0.8
Tj Junction Temperature (°C)
T = 25°C
10
VGS(th)
-50
-ISD Reverse Drain Current (A)
-VGS
RDS(on)
1.4
5
Typical Transfer Characteristics
3.5V
VGS = -10V
ID = - 2.8A
1.6
-VGS Gate-Source Voltage (V)
100
10
Output Characteristics
T = 150°C
3
1
-VDS Drain-Source Voltage (V)
Output Characteristics
0.1
10V
T = 150°C
-ID Drain Current (A)
-ID Drain Current (A)
10V
T = 25°C
10
0.01
RDS(on) Drain-Source On-Resistance

ADVANCE INFORMATION
Typical Characteristics
Source-Drain Diode Forward Voltage
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ZXMP10A18G
VGS = 0V
f = 1MHz
1600
1400
1200
1000
CISS
COSS
800
600
CRSS
400
200
0
0.1
1
10
-VDS - Drain - Source Voltage (V)
Capacitance v Drain-Source Voltage
100
-VGS Gate-Source Voltage (V)
1800
C Capacitance (pF)
ADVANCE INFORMATION
Typical Characteristics (cont.)
10
ID = -2.8A
8
6
4
2
VDS = -50V
0
0 2 4 6 8 10 12 14 16 18 20 22 24 26
Q - Charge (nC)
Gate-Source Voltage v Gate Charge
Test Circuits
ZXMP10A18G
Document Number DS33598 Rev. 3 - 2
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A Product Line of
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ZXMP10A18G
Package Outline Dimensions
ADVANCE INFORMATION
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version.
D
Q
b1
C
E
E1
Gauge
Plane
0.25
Seating
Plane
e1
L
b
°
10
0°
e
A1
7°
7°
A
SOT223
Dim Min Max Typ
A
1.55 1.65 1.60
A1 0.010 0.15 0.05
b
0.60 0.80 0.70
b1
2.90 3.10 3.00
C
0.20 0.30 0.25
D
6.45 6.55 6.50
E
3.45 3.55 3.50
E1
6.90 7.10 7.00
e
4.60
e1
2.30
L
0.85 1.05 0.95
Q
0.84 0.94 0.89
All Dimensions in mm
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
X1
Y1
C1
Y2
Dimensions Value (in mm)
C
2.30
C1
6.40
X
1.20
X1
3.30
Y
1.60
Y1
1.60
Y2
8.00
Y
X
ZXMP10A18G
Document Number DS33598 Rev. 3 - 2
C
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A Product Line of
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ZXMP10A18G
ADVANCE INFORMATION
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for
use provided in the labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2015, Diodes Incorporated
www.diodes.com
ZXMP10A18G
Document Number DS33598 Rev. 3 - 2
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