Semiconductor IGNS WN DRA EW DES H T I TW ON PAR ETE - N L BSO SS O 75A, 600V P-Type MOS Controlled Thyristor (MCT) CE April 1999 PRO MCTV75P60E1, MCTA75P60E1 Features Package JEDEC STYLE TO-247 5-LEAD • 75A, -600V ANODE • VTM = -1.3V(Maximum) at I = 75A and +150oC • 2000A Surge Current Capability ANODE CATHODE GATE RETURN GATE • 2000A/µs di/dt Capability • MOS Insulated Gate Control • 120A Gate Turn-Off Capability at +150oC Description JEDEC MO-093AA (5-LEAD TO-218) The MCT is an MOS Controlled Thyristor designed for switching currents on and off by negative and positive pulsed control of an insulated MOS gate. It is designed for use in motor controls, inverters, line switches and other power switching applications. ANODE ANODE CATHODE GATE RETURN GATE The MCT is especially suited for resonant (zero voltage or zero current switching) applications. The SCR like forward drop greatly reduces conduction power loss. MCTs allow the control of high power circuits with very small amounts of input energy. They feature the high peak current capability common to SCR type thyristors, and operate at junction temperatures up to +150oC with active switching. Symbol G A PART NUMBER INFORMATION PART NUMBER PACKAGE BRAND MCTV75P60E1 TO-247 MV75P60E1 MCTA75P60E1 MO-093AA MA75P60E1 K NOTE: When ordering, use the entire part number. Absolute Maximum Ratings TC = +25oC, Unless Otherwise Specified MCTV75P60E1 MCTA75P60E1 UNITS -600 +5 V V Peak Off-State Voltage (See Figure 11). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDRM Peak Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Continuous Cathode Current (See Figure 2) TC = +25oC (Package Limited) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TC = +90oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Non-Repetitive Peak Cathode Current (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Peak Controllable Current (See Figure 10) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Gate-Anode Voltage (Continuous) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Gate-Anode Voltage (Peak) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Rate of Change of Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Rate of Change of Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . (0.063" (1.6mm) from case for 10s) NOTE: VRRM IK25 IK90 IKSM IKC VGA VGAM dv/dt di/dt PT TJ, TSTG TL 85 75 2000 120 ±20 ±25 See Figure 11 2000 208 1.67 -55 to +150 260 A A A A V V A/µs W W/oC oC oC 1. Maximum Pulse Width of 250µs (Half Sine) Assume TJ (Initial) = +90oC and TJ (Final) = TJ (Max) = +150oC CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures. Copyright © Harris Corporation 1999 2-18 File Number 3374.6 Specifications MCTV75P60E1, MCTA75P60E1 Electrical Specifications TC = +25oC Unless Otherwise Specified PARAMETER SYMBOL Peak Off-State Blocking Current IDRM Peak Reverse Blocking Current IRRM On-State Voltage VTM TEST CONDITIONS MIN TYP MAX UNITS VKA = -600V, TC = +150oC - - 3 mA VGA = +18V TC = +25oC - - 100 µA VKA = +5V TC = +150oC - - 4 mA VGA = +18V TC = +25oC - - 100 µA IK = IK90, TC = +150oC - - 1.3 V VGA = -10V TC = +25oC - - 1.4 V Gate-Anode Leakage Current IGAS VGA = ±20V - - 200 nA Input Capacitance CISS VKA = -20V, TJ = +25oC VGA = +18V - 10 - nF L = 200µH, IK = IK90 RG = 1Ω, VGA = +18V, -7V TJ = +125oC VKA = -300V - 300 - ns - 200 - ns Current Turn-On Delay Time tD(ON)I Current Rise Time tRI Current Turn-Off Delay Time tD(OFF)I - 700 - ns Current Fall Time tFI - 1.15 1.4 µs Turn-Off Energy EOFF - 10 - mJ Thermal Resistance RθJC - .5 .6 oC/W Typical Performance Curves 100 120 PULSE TEST PULSE DURATION - 250µs DUTY CYCLE < 2% 110 IK , DC CATHODE CURRENT (A) IK, CATHODE CURRENT (A) 300 TJ = +150oC TJ = 10 TJ = +25oC -40oC 100 PACKAGE LIMIT 90 80 70 60 50 40 30 20 10 1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 0 25 2.0 35 45 55 65 75 85 95 105 115 125 135 145 155 TC, CASE TEMPERATURE (oC) VTM, CATHODE VOLTAGE (V) FIGURE 1. CATHODE CURRENT vs SATURATION VOLTAGE (TYPICAL) FIGURE 2. MAXIMUM CONTINUOUS CATHODE CURRENT 2-19 MCTV75P60E1, MCTA75P60E1 Typical Performance Curves (Continued) TJ = +150oC, RG = 1Ω, L = 200µH 400 300 VKA = -300V 200 VKA = -200V 100 0 10 20 30 40 50 60 70 80 90 100 TJ = +150oC, RG = 1Ω, L = 200µH 2.0 TD(OFF)I , TURN-OFF DELAY (µs) TD(ON)I , TURN-ON DELAY (ns) 500 1.8 1.6 1.4 1.2 1.0 VKA = -200V 0.6 0.4 0.2 0.0 10 110 120 VKA = -300V 0.8 20 30 50 60 70 80 90 100 110 120 IK, CATHODE CURRENT (A) IK, CATHODE CURRENT (A) FIGURE 3. TURN-ON DELAY vs CATHODE CURRENT (TYPICAL) FIGURE 4. TURN-OFF DELAY vs CATHODE CURRENT (TYPICAL) TJ = +150oC, RG = 1Ω, L = 200µH 500 40 TJ = +150oC, RG = 1Ω, L = 200µH 2.0 1.8 1.6 tFI , FALL TIME (µs) tRI, RISE TIME (ns) 400 300 VKA = -200V 200 VKA = -300V VKA = -200V 1.4 1.2 VKA = -300V 1.0 0.8 0.6 0.4 100 0.2 0 10 20 30 40 50 60 70 80 90 IK , CATHODE CURRENT (A) 100 110 0.0 10 120 TJ = +150oC, RG = 1Ω, L = 200µH 5.0 VKA = -300V VKA = -200V 1.0 0.1 10 20 30 40 50 60 70 80 90 IK, CATHODE CURRENT (A) 100 110 30 40 50 60 70 80 90 IK , CATHODE CURRENT (A) 100 110 120 FIGURE 6. TURN-OFF FALL TIME vs CATHODE CURRENT (TYPICAL) EOFF, TURN-OFF SWITCHING LOSS (mJ) EON, TURN-ON SWITCHING LOSS (mJ) FIGURE 5. TURN-ON RISE TIME vs CATHODE CURRENT (TYPICAL) 20 120 FIGURE 7. TURN-ON ENERGY LOSS vs CATHODE CURRENT (TYPICAL) 2-20 TJ = +150oC, RG = 1Ω, L = 200µH 20.0 VKA = -300V 10.0 VKA = -200V 1.0 10 20 30 40 50 60 70 80 90 IK , CATHODE CURRENT (A) 100 110 120 FIGURE 8. TURN-OFF ENERGY LOSS vs CATHODE CURRENT (TYPICAL) MCTV75P60E1, MCTA75P60E1 100 EON = tD(ON) I = 0 IK , PEAK CATHODE CURRENT (A) fMAX , MAX OPERATING FREQUENCY (kHz) Typical Performance Curves (Continued) EON ≠ 0, tD(ON) I ≠ 0 VKA = -200V 10 VKA = -300V fMAX1 = 0.05(tD(ON) I + tD(OFF) I) fMAX2 = (PD - PC) / ESWITCH 1 10 PD: ALLOWABLE DISSIPATION PC: CONDUCTION DISSIPATION (PC DUTY FACTOR = 50%) RθJC = 0.5oC/W 100 IK , CATHODE CURRENT (A) 200 TURN-OFF SAFE OPERATING AREA 0 FIGURE 9. OPERATING FREQUENCY vs CATHODE CURRENT (TYPICAL) -50 -150 -250 -350 -450 VKA , PEAK TURN OFF VOLTAGE (V) TJ = +150oC, VGA = 18V -200 CS = 0.1µF, TJ = +150oC -100 CS = 0.1µF, TJ = +25oC -700 CS = 1µF, TJ = +150oC SPIKE VOLTAGE (V) -675 -650 -625 -600 -575 -550 -525 -10 CS = 2µF, TJ = +150oC CS = 1µF, TJ = +25oC -500 -475 CS = 2µF, TJ = +25oC -450 -425 0.1 -550 FIGURE 10. TURN-OFF CAPABILITY vs ANODE-CATHODE VOLTAGE -725 VDRM, BREAKDOWN VOLTAGE (V) TJ = +150oC, VGA = 18V, L = 200µH 150 140 130 120 110 100 90 80 70 60 50 40 30 20 10 0 -1 1 1.0 10.0 100.0 dv/dt (V/µs) 1000.0 10000.0 FIGURE 11. BLOCKING VOLTAGE vs dv/dt 6 11 16 21 26 31 di/dt (A/µs) 36 41 46 FIGURE 12. SPIKE VOLTAGE vs di/dt (TYPICAL) Operating Frequency Information Operating frequency information for a typical device (Figure 9) is presented as a guide for estimating device performance for a specific application. Other typical frequency vs cathode current (IAK) plots are possible using the information shown for a typical unit in Figures 3 to 8. The operating frequency plot (Figure 9) of a typical device shows fMAX1 or fMAX2 whichever is smaller at each point. The information is based on measurements of a typical device and is bounded by the maximum rated junction temperature. fMAX1 is defined by fMAX1 = 0.05 / (tD(ON)I + tD(OFF)I). tD(ON)I + tD(OFF)I deadtime (the denominator) has been arbitrarily held to 10% of the on-state time for a 50% duty factor. Other definitions are possible. tD(ON)I is defined as the 10% point of the leading edge of the input pulse and the point where the cathode current rises to 10% of its maximum value. tD(OFF)I is defined as the 90% point of the trailing edge of the input pulse and the point where the cathode current falls to 90% of its maximum value. Device delay can establish an additional frequency limiting condi- tion for an application other than TJMAX. tD(OFF)I is important when controlling output ripple under a lightly loaded condition. fMAX2 is defined by fMAX2 = (PD - PC) / (EON + EOFF). The allowable dissipation (PD) is defined by PD = (TJMAX - TC) / RΘJC. The sum of device switching and conduction losses must not exceed PD. A 50% duty factor was used (Figure 10) and the conduction losses (PC) are approximated by PC = (VAK • IAK) / (duty factor/100). EON is defined as the sum of the instantaneous power loss starting at the leading edge of the input pulse and ending at the point where the anodecathode voltage equals saturation voltage (VAK = VTM). EOFF is defined as the sum of the instantaneous power loss starting at the trailing edge of the input pulse and ending at the point where the cathode current equals zero (IK = 0). The switching power loss (Figure 10) is defined as fMAX2 • (EON + EOFF). Because Turn-on switching losses can be greatly influenced by external circuit conditions and components, fMAX curves are plotted both including and neglecting turn-on losses. 2-21 MCTV75P60E1, MCTA75P60E1 Test Circuits VG 200µH + RURG8060 IK VK VA 500Ω + - 9V - + - 10kΩ 20V DUT + 4.7kΩ CS DUT FIGURE 13. SWITCHING TEST CIRCUIT FIGURE 14. VSPIKE TEST CIRCUIT MAXIMUM RISE AND FALL TIME OF VG IS 200ns VG IK VG 90% di/dt 10% IK -VKA VSPIKE 90% VTM IK 10% tD(OFF) I tR I tF I VAK tD(ON) I FIGURE 15. SWITCHING TEST WAVEFORMS FIGURE 16. VSPIKE TEST WAVEFORMS Handling Precautions for MCT's MOS Controlled Thyristors are susceptible to gate-insulation damage by the electrostatic discharge of energy through the devices. When handling these devices, care should be exercised to assure that the static charge built in the handler's body capacitance is not discharged through the device. MCT's can be handled safely if the following basic precautions are taken: 1. Prior to assembly into a circuit, all leads should be kept shorted together either by the use of metal shorting springs or by the insertion into conductive material such as *“ECCOSORB LD26” or equivalent. 2. When devices are removed by hand from their carriers, the hand being used should be grounded by any suitable means - for example, with a metallic wristband. 3. Tips of soldering irons should be grounded. 4. Devices should never be inserted into or removed from circuits with power on. 5. Gate Voltage Rating - Never exceed the gate-voltage rating of VGA. Exceeding the rated VGA can result in permanent damage to the oxide layer in the gate region. 6. Gate Termination - The gates of these devices are essentially capacitors. Circuits that leave the gate open-circuited or floating should be avoided. These conditions can result in turn-on of the device due to voltage buildup on the input capacitor due to leakage currents or pickup. 7. Gate Protection - These devices do not have an internal monolithic zener diode from gate to emitter. If gate protection is required an external zener is recommended. † Trademark Emerson and Cumming, Inc. 2-22