MPSW55, MPSW56 One Watt Amplifier Transistors PNP Silicon http://onsemi.com Features • Pb−Free Packages are Available* COLLECTOR 3 2 BASE MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage MPSW55 MPSW56 VCEO −60 −80 Vdc Collector −Base Voltage MPSW55 MPSW56 VCBO −60 −80 Vdc VEBO −4.0 Vdc Collector Current − Continuous IC −500 mAdc Total Device Dissipation @ TA = 25°C Derate above 25°C PD 1.0 8.0 W mW/°C Total Device Dissipation @ TC = 25°C Derate above 25°C PD 2.5 20 W mW/°C TJ, Tstg −55 to +150 °C Characteristic Symbol Max Unit Thermal Resistance, Junction−to−Ambient RqJA 125 °C/W Thermal Resistance, Junction−to−Case RqJC 50 °C/W Emitter −Base Voltage Operating and Storage Junction Temperature Range 1 EMITTER 1 12 3 STRAIGHT LEAD BULK PACK 2 3 BENT LEAD TAPE & REEL AMMO PACK TO−92 1 WATT (TO−226) CASE 29−10 STYLE 1 MARKING DIAGRAM THERMAL CHARACTERISTICS Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. MPS W5x AYWW G G x = 5 or 6 A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION Device Package Shipping† MPSW55G TO−92 (Pb−Free) 5000 Units/Bulk MPSW55RLRAG TO−92 (Pb−Free) 2000/Tape & Reel TO−92 2000/Ammo Pack TO−92 (Pb−Free) 2000/Ammo Pack MPSW56RLRP MPSW56RLRPG *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2010 August, 2010 − Rev. 4 1 †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Publication Order Number: MPSW55/D MPSW55, MPSW56 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max −60 −80 − − −4.0 − − − −0.5 −0.5 − − −0.1 −0.1 − −0.1 100 50 − − − −0.5 − −1.2 50 − − 15 Unit OFF CHARACTERISTICS Collector −Emitter Breakdown Voltage (Note 1) (IC = −1.0 mAdc, IB = 0) MPSW55 MPSW56 Emitter −Base Breakdown Voltage (IE = −100 mAdc, IC = 0) V(BR)CEO V(BR)EBO Collector Cutoff Current (VCE = −40 Vdc, IB = 0) (VCE = −60 Vdc, IB = 0) MPSW55 MPSW56 Collector Cutoff Current (VCB = −40 Vdc, IE = 0) (VCB = −60 Vdc, IE = 0) MPSW55 MPSW56 ICES ICBO Emitter Cutoff Current (VEB = −3.0 Vdc, IC = 0) IEBO Vdc Vdc mAdc mAdc mAdc ON CHARACTERISTICS(1) DC Current Gain (IC = −50 mAdc, VCE = −1.0 Vdc) (IC = −250 mAdc, VCE = −1.0 Vdc) hFE Collector −Emitter Saturation Voltage (IC = −250 mAdc, IB = −10 mAdc) VCE(sat) Base−Emitter On Voltage (IC = −250 mAdc, VCE = −5.0 Vdc) VBE(on) − Vdc Vdc SMALL−SIGNAL CHARACTERISTICS fT Current −Gain — Bandwidth Product (IC = −250 mAdc, VCE = −5.0 Vdc, f = 20 MHz) Output Capacitance (VCB = −10 Vdc, f = 1.0 MHz) Cobo MHz pF 1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%. 400 hFE, DC CURRENT GAIN TJ = 125°C VCE = -1.0 V 200 25°C -55°C 100 80 60 40 -0.5 -0.7 -1.0 -2.0 -3.0 -5.0 -7.0 -10 -20 -30 IC, COLLECTOR CURRENT (mA) Figure 1. DC Current Gain http://onsemi.com 2 -50 -70 -100 -200 -300 -500 -1.0 -1.0 TJ = 25°C TJ = 25°C -0.8 -0.8 -0.6 IC = -10 mA -50 mA -100 mA -250 mA V, VOLTAGE (VOLTS) VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) MPSW55, MPSW56 -500 mA -0.4 -0.2 VBE(sat) @ IC/IB = 10 -0.6 VBE(on) @ VCE = -1.0 V -0.4 -0.2 VCE(sat) @ IC/IB = 10 0 -0.05 -0.1 -0.2 -0.5 -1.0 -2.0 -5.0 IB, BASE CURRENT (mA) -10 -20 0 -0.5 -1.0 -50 -2.0 100 -0.8 70 -1.2 TJ = 25°C Cibo 50 -1.6 qVB for VBE -2.0 30 20 10 -2.4 Cobo 7.0 -2.8 -0.5 -1.0 -2.0 -5.0 -10 -20 -50 -100 -200 IC, COLLECTOR CURRENT (mA) 5.0 -0.1 -500 -0.2 -0.5 -1.0 -2.0 -5.0 -10 -20 VR, REVERSE VOLTAGE (VOLTS) Figure 4. Base−Emitter Temperature Coefficient -50 -100 Figure 5. Capacitance 200 VCE = -2.0 V TJ = 25°C IC, COLLECTOR CURRENT (mA) f, T CURRENT-GAIN — BANDWIDTH PRODUCT (MHz) -500 Figure 3. “On” Voltages C, CAPACITANCE (pF) θ VB, TEMPERATURE COEFFICIENT (mV/°C) Figure 2. Collector Saturation Region -5.0 -10 -20 -50 -100 -200 IC, COLLECTOR CURRENT (mA) 100 70 50 30 DUTY CYCLE ≤ 10% -2 k -5.0 -7.0 -10 -20 -30 -50 -70 -100 IC, COLLECTOR CURRENT (mA) -200 -100 -50 -10 -1.0 -200 100 ms -500 -20 20 -2.0 -3.0 1.0 ms -1 k Figure 6. Current−Gain — Bandwidth Product 1.0 s TA = 25°C TC = 25°C dc dc CURRENT LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT MPSW55 MPSW56 -2.0 -5.0 -10 -20 -60 -80 -100 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 7. Active Region — Safe Operating Area http://onsemi.com 3 MPSW55, MPSW56 PACKAGE DIMENSIONS TO−92 (TO−226) 1 WATT CASE 29−10 ISSUE O A B R STRAIGHT LEAD BULK PACK P L F K D X X G J H V C SECTION X−X N 1 N NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1994. 2. CONTROLLING DIMENSION: INCHES. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. DIMENSION F APPLIES BETWEEN DIMENSIONS P AND L. DIMENSIONS D AND J APPLY BETWEEN DI MENSIONS L AND K MINIMUM. THE LEAD DIMENSIONS ARE UNCONTROLLED IN DIMENSION P AND BEYOND DIMENSION K MINIMUM. DIM A B C D F G H J K L N P R V INCHES MIN MAX 0.175 0.205 0.290 0.310 0.125 0.165 0.018 0.021 0.016 0.019 0.045 0.055 0.095 0.105 0.018 0.024 0.500 --0.250 --0.080 0.105 --0.100 0.135 --0.135 --- MILLIMETERS MIN MAX 4.44 5.21 7.37 7.87 3.18 4.19 0.46 0.53 0.41 0.48 1.15 1.39 2.42 2.66 0.46 0.61 12.70 --6.35 --2.04 2.66 --2.54 3.43 --3.43 --- STYLE 1: PIN 1. EMITTER 2. BASE 3. COLLECTOR A BENT LEAD TAPE & REEL AMMO PACK R B P T SEATING PLANE G K D X X J V 1 C N SECTION X−X NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: INCHES. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. DIMENSION F APPLIES BETWEEN DIMENSIONS P AND L. DIMENSIONS D AND J APPLY BETWEEN DIMENSIONS L AND K MINIMUM. THE LEAD DIMENSIONS ARE UNCONTROLLED IN DIMENSION P AND BEYOND DIMENSION K MINIMUM. DIM A B C D G J K N P R V INCHES MIN MAX 0.175 0.205 0.290 0.310 0.125 0.165 0.018 0.021 0.094 0.102 0.018 0.024 0.500 --0.080 0.105 --0.100 0.135 --0.135 --- MILLIMETERS MIN MAX 4.44 5.21 7.37 7.87 3.18 4.19 0.46 0.53 2.40 2.80 0.46 0.61 12.70 --2.04 2.66 --2.54 3.43 --3.43 --- ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Email: [email protected] N. American Technical Support: 800−282−9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81−3−5773−3850 http://onsemi.com 4 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative MPSW55/D