ONSEMI BC640G

BC640, BC640−16
High Current Transistors
PNP Silicon
Features
• Pb−Free Packages are Available*
http://onsemi.com
COLLECTOR
2
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector-Emitter Voltage
VCEO
−80
Vdc
Collector-Base Voltage
VCBO
−80
Vdc
Emitter-Base Voltage
VEBO
−5.0
Vdc
Collector Current − Continuous
IC
−0.5
Adc
Total Device Dissipation @ TA = 25°C
Derate above 25°C
PD
625
5.0
mW
mW/°C
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD
1.5
12
W
mW/°C
TJ, Tstg
−55 to +150
°C
Operating and Storage Junction
Temperature Range
3
BASE
1
EMITTER
TO−92
CASE 29
STYLE 14
12
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction−to−Ambient
RqJA
200
°C/W
Thermal Resistance, Junction−to−Case
RqJC
83.3
°C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1
3
STRAIGHT LEAD
BULK PACK
2
3
BENT LEAD
TAPE & REEL
AMMO PACK
MARKING DIAGRAMS
BC
640
AYWW G
G
BC64
0−16
AYWW G
G
A
= Assembly Location
Y
= Year
WW
= Work Week
G
= Pb−Free Package
(Note: Microdot may be in either location)
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2007
March, 2007 − Rev. 0
1
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
Publication Order Number:
BC640/D
BC640, BC640−16
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
−80
−
−
−80
−
−
−5.0
−
−
Vdc
−
−
−
−
−100
−10
nAdc
mAdc
25
40
100
25
−
−
−
−
−
160
250
−
−
−
−0.25
−0.5
−0.5
−
−
−
−1.0
−
150
−
−
9.0
−
−
110
−
OFF CHARACTERISTICS
Collector − Emitter Breakdown Voltage
(IC = −10 mAdc, IB = 0)
V(BR)CEO
Collector − Base Breakdown Voltage
(IC = −100 mAdc, IE = 0)
V(BR)CBO
Emitter − Base Breakdown Voltage
(IE = −10 mAdc, IC = 0)
V(BR)EBO
Collector Cutoff Current
(VCB = −30 Vdc, IE = 0)
(VCB = −30 Vdc, IE = 0, TA = 125°C)
Vdc
Vdc
ICBO
ON CHARACTERISTICS (Note 1)
DC Current Gain
(IC = −5.0 mAdc, VCE = −2.0 Vdc)
(IC = −150 mAdc, VCE = −2.0 Vdc)
hFE
BC640
BC640−16
(IC = −500 mA, VCE = −2.0 V)
Collector − Emitter Saturation Voltage
(IC = −500 mAdc, IB = −50 mAdc)
VCE(sat)
Base − Emitter On Voltage
(IC = −500 mAdc, VCE = −2.0 Vdc)
VBE(on)
−
Vdc
Vdc
DYNAMIC CHARACTERISTICS
Current Gain − Bandwidth Product
(IC = −50 mAdc, VCE = −2.0 Vdc, f = 100 MHz)
fT
Output Capacitance
(VCB = −10 Vdc, IE = 0, f = 1.0 MHz)
Cob
Input Capacitance
(VEB = −0.5 Vdc, IC = 0, f = 1.0 MHz)
Cib
MHz
pF
pF
1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle 2.0%.
ORDERING INFORMATION
Package
Shipping
BC640G
Device
TO−92
(Pb−Free)
5000 Units / Bulk
BC640ZL1G
TO−92
(Pb−Free)
2000 Units / Ammo Box
TO−92
5000 Units / Bulk
TO−92
(Pb−Free)
5000 Units / Bulk
BC640−16
BC640−16G
http://onsemi.com
2
BC640, BC640−16
500
−1000
−200
−100
−50
VCE = −2 V
SOA = 1S
−B
PD TA 25°C
hFE, DC CURRENT GAIN
IC, COLLECTOR CURRENT (mA)
−500
PD TC 25°C
−20
−10
−5
−2
−1
−1
BC636
BC638
BC640
PD TA 25°C
PD TC 25°C
200
−A
50
20
−2 −3 −4 −5 −7 −10
−20 −30−40 −50 −70 −100
VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)
−L
100
−1
−3
−5
−300 −500 −1000
Figure 2. DC Current Gain
500
−1
300
V, VOLTAGE (VOLTS)
−0.8
VCE = −2 V
100
50
VBE(sat) @ IC/IB = 10
VBE(on) @ VCE = −2 V
−0.6
−0.4
−0.2
VCE(sat) @ IC/IB = 10
20
−1
−10
−100
IC, COLLECTOR CURRENT (mA)
0
−1000
−1
Figure 3. Current Gain Bandwidth Product
−10
−100
IC, COLLECTOR CURRENT (mA)
Figure 4. “Saturation” and “On” Voltages
−0.2
θV, TEMPERATURE COEFFICIENTS (mV/°C)
f,
T CURRENT−GAIN BANDWIDTH PRODUCT (MHz)
Figure 1. Active Region Safe Operating Area
−10
−30 −50 −100
IC, COLLECTOR CURRENT (mA)
−1.0
VCE = −2 VOLTS
DT = 0°C to +100°C
−1.6
−2.2
qV for VBE
−1
−3
−5
−10
−30 −50 −100
IC, COLLECTOR CURRENT (mA)
−300 −500 −1000
Figure 5. Temperature Coefficients
http://onsemi.com
3
−1000
BC640, BC640−16
PACKAGE DIMENSIONS
TO−92 (TO−226)
CASE 29−11
ISSUE AM
A
B
STRAIGHT LEAD
BULK PACK
R
P
L
SEATING
PLANE
K
D
X X
G
J
H
V
C
SECTION X−X
1
N
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
4. LEAD DIMENSION IS UNCONTROLLED IN P AND
BEYOND DIMENSION K MINIMUM.
DIM
A
B
C
D
G
H
J
K
L
N
P
R
V
INCHES
MIN
MAX
0.175
0.205
0.170
0.210
0.125
0.165
0.016
0.021
0.045
0.055
0.095
0.105
0.015
0.020
0.500
−−−
0.250
−−−
0.080
0.105
−−−
0.100
0.115
−−−
0.135
−−−
MILLIMETERS
MIN
MAX
4.45
5.20
4.32
5.33
3.18
4.19
0.407
0.533
1.15
1.39
2.42
2.66
0.39
0.50
12.70
−−−
6.35
−−−
2.04
2.66
−−−
2.54
2.93
−−−
3.43
−−−
N
A
R
BENT LEAD
TAPE & REEL
AMMO PACK
B
P
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. CONTOUR OF PACKAGE BEYOND
DIMENSION R IS UNCONTROLLED.
4. LEAD DIMENSION IS UNCONTROLLED IN P
AND BEYOND DIMENSION K MINIMUM.
T
SEATING
PLANE
K
D
X X
G
J
V
1
C
SECTION X−X
DIM
A
B
C
D
G
J
K
N
P
R
V
MILLIMETERS
MIN
MAX
4.45
5.20
4.32
5.33
3.18
4.19
0.40
0.54
2.40
2.80
0.39
0.50
12.70
−−−
2.04
2.66
1.50
4.00
2.93
−−−
3.43
−−−
N
STYLE 14:
PIN 1. EMITTER
2. COLLECTOR
3. BASE
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
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Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada
Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada
Email: [email protected]
N. American Technical Support: 800−282−9855 Toll Free
USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81−3−5773−3850
http://onsemi.com
4
ON Semiconductor Website: www.onsemi.com
Order Literature: http://www.onsemi.com/orderlit
For additional information, please contact your local
Sales Representative
BC640/D