2N5550, 2N5551 Preferred Device Amplifier Transistors NPN Silicon Features • These are Pb−Free Devices* http://onsemi.com COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Collector − Emitter Voltage Value VCEO 2N5550 2N5551 Collector − Base Voltage Vdc 140 160 VCBO 2N5550 2N5551 Emitter − Base Voltage 1 EMITTER Vdc 160 180 VEBO 6.0 Vdc Collector Current − Continuous IC 600 mAdc Total Device Dissipation @ TA = 25°C Derate above 25°C PD 625 5.0 mW mW/°C Total Device Dissipation @ TC = 25°C Derate above 25°C PD 1.5 12 W mW/°C TJ, Tstg −55 to +150 °C Characteristic Symbol Max Unit Thermal Resistance, Junction−to−Ambient RqJA 200 °C/W Thermal Resistance, Junction−to−Case RqJC 83.3 °C/W Operating and Storage Junction Temperature Range 2 BASE Unit TO−92 CASE 29 STYLE 1 1 12 3 STRAIGHT LEAD BULK PACK 2 3 BENT LEAD TAPE & REEL AMMO PACK THERMAL CHARACTERISTICS Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. MARKING DIAGRAM 2N 555x AYWW G G x = 0 or 1 A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 5 of this data sheet. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2007 March, 2007 − Rev. 5 1 Preferred devices are recommended choices for future use and best overall value. Publication Order Number: 2N5550/D 2N5550, 2N5551 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit 140 160 − − Vdc 160 180 − − Vdc 6.0 − Vdc − − − − 100 50 100 50 nAdc − 50 nAdc 60 80 60 80 20 30 − − 250 250 − − − − − − 0.15 0.25 0.20 Vdc − − − 1.0 1.2 1.0 Vdc fT 100 300 MHz Cobo − 6.0 pF − − 30 20 50 200 − − 10 8.0 OFF CHARACTERISTICS Collector−Emitter Breakdown Voltage (Note 1) (IC = 1.0 mAdc, IB = 0) V(BR)CEO 2N5550 2N5551 Collector−Base Breakdown Voltage (IC = 100 mAdc, IE = 0 ) V(BR)CBO 2N5550 2N5551 Emitter−Base Breakdown Voltage (IE = 10 mAdc, IC = 0) V(BR)EBO Collector Cutoff Current (VCB = 100 Vdc, IE = 0) (VCB = 120 Vdc, IE = 0) (VCB = 100 Vdc, IE = 0, TA = 100°C) (VCB = 120 Vdc, IE = 0, TA = 100°C) ICBO 2N5550 2N5551 2N5550 2N5551 Emitter Cutoff Current (VEB = 4.0 Vdc, IC = 0) IEBO mAdc ON CHARACTERISTICS (Note 1) DC Current Gain (IC = 1.0 mAdc, VCE = 5.0 Vdc) hFE 2N5550 2N5551 2N5550 2N5551 2N5550 2N5551 (IC = 10 mAdc, VCE = 5.0 Vdc) (IC = 50 mAdc, VCE = 5.0 Vdc) Collector−Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 50 mAdc, IB = 5.0 mAdc) VCE(sat) Both Types 2N5550 2N5551 Base−Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 50 mAdc, IB = 5.0 mAdc) VBE(sat) Both Types 2N5550 2N5551 SMALL−SIGNAL CHARACTERISTICS Current−Gain — Bandwidth Product (IC = 10 mAdc, VCE = 10 Vdc, f = 100 MHz) Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) Input Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) Cibo 2N5550 2N5551 Small−Signal Current Gain (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) hfe Noise Figure (IC = 250 mAdc, VCE = 5.0 Vdc, RS = 1.0 kW, f = 1.0 kHz) pF NF 2N5550 2N5551 1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%. http://onsemi.com 2 − dB 2N5550, 2N5551 500 h FE , DC CURRENT GAIN 300 200 VCE = 1.0 V VCE = 5.0 V TJ = 125°C 25°C 100 −55 °C 50 30 20 10 7.0 5.0 0.1 0.2 0.3 0.5 0.7 1.0 3.0 2.0 5.0 7.0 IC, COLLECTOR CURRENT (mA) 10 20 30 50 70 100 VCE , COLLECTOR−EMITTER VOLTAGE (VOLTS) Figure 1. DC Current Gain 1.0 0.9 0.8 0.7 0.6 IC = 1.0 mA 10 mA 100 mA 30 mA 0.5 0.4 0.3 0.2 0.1 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 IB, BASE CURRENT (mA) Figure 2. Collector Saturation Region 101 1.0 TJ = 25°C 100 10−1 0.8 TJ = 125°C 10−2 IC = ICES 75°C REVERSE 10−3 FORWARD VBE(sat) @ IC/IB = 10 0.6 0.4 0.2 25°C 10−4 10−5 0.4 V, VOLTAGE (VOLTS) IC, COLLECTOR CURRENT (A) μ VCE = 30 V VCE(sat) @ IC/IB = 10 0 0.3 0.2 0.1 0 0.1 0.2 0.3 0.4 VBE, BASE−EMITTER VOLTAGE (VOLTS) 0.5 0.6 0.1 Figure 3. Collector Cut−Off Region 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 IC, COLLECTOR CURRENT (mA) Figure 4. “On” Voltages http://onsemi.com 3 50 100 θV, TEMPERATURE COEFFICIENT (mV/°C) 2N5550, 2N5551 2.5 2.0 TJ = − 55°C to +135°C 1.5 1.0 qVC for VCE(sat) 0.5 0 − 0.5 − 1.0 qVB for VBE(sat) − 1.5 − 2.0 − 2.5 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 IC, COLLECTOR CURRENT (mA) 50 100 Figure 5. Temperature Coefficients 100 70 50 Vin 100 10 ms INPUT PULSE tr, tf ≤ 10 ns DUTY CYCLE = 1.0% 0.25 mF VCC 30 V 3.0 k RC RB Vout 5.1 k Vin C, CAPACITANCE (pF) VBB −8.8 V 10.2 V 1N914 100 TJ = 25°C 30 20 10 Cibo 7.0 5.0 Cobo 3.0 2.0 1.0 0.2 Values Shown are for IC @ 10 mA 0.3 3.0 5.0 7.0 10 20 Figure 7. Capacitances 1000 5000 IC/IB = 10 TJ = 25°C 500 2000 t, TIME (ns) 100 td @ VEB(off) = 1.0 V 30 VCC = 120 V tf @ VCC = 30 V 500 300 200 20 10 0.2 0.3 0.5 IC/IB = 10 TJ = 25°C 1000 tr @ VCC = 30 V 50 tf @ VCC = 120 V 3000 tr @ VCC = 120 V 300 t, TIME (ns) 2.0 VR, REVERSE VOLTAGE (VOLTS) Figure 6. Switching Time Test Circuit 200 0.5 0.7 1.0 ts @ VCC = 120 V 100 1.0 2.0 3.0 5.0 10 20 30 50 IC, COLLECTOR CURRENT (mA) 100 50 0.2 0.3 0.5 200 Figure 8. Turn−On Time 1.0 2.0 3.0 5.0 10 20 30 50 IC, COLLECTOR CURRENT (mA) Figure 9. Turn−Off Time http://onsemi.com 4 100 200 2N5550, 2N5551 ORDERING INFORMATION Package Shipping† 2N5550G TO−92 (Pb−Free) 5000 Units / Bulk 2N5550RLRPG TO−92 (Pb−Free) 2000 / Tape & Ammo Box 2N5551G TO−92 (Pb−Free) 5000 Units / Bulk 2N5551RL1G TO−92 (Pb−Free) 2N5551RLRAG TO−92 (Pb−Free) 2N5551RLRPG TO−92 (Pb−Free) 2N55551ZL1G TO−92 (Pb−Free) Device 2000 / Tape & Reel 2000 / Tape & Ammo Box †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 5 2N5550, 2N5551 PACKAGE DIMENSIONS TO−92 (TO−226) CASE 29−11 ISSUE AM A B STRAIGHT LEAD BULK PACK R P L SEATING PLANE K D X X G J H V C SECTION X−X 1 N NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. DIM A B C D G H J K L N P R V INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.021 0.045 0.055 0.095 0.105 0.015 0.020 0.500 −−− 0.250 −−− 0.080 0.105 −−− 0.100 0.115 −−− 0.135 −−− MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.407 0.533 1.15 1.39 2.42 2.66 0.39 0.50 12.70 −−− 6.35 −−− 2.04 2.66 −−− 2.54 2.93 −−− 3.43 −−− N A R BENT LEAD TAPE & REEL AMMO PACK B P T SEATING PLANE K D X X G J V 1 C SECTION X−X NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. DIM A B C D G J K N P R V MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.40 0.54 2.40 2.80 0.39 0.50 12.70 −−− 2.04 2.66 1.50 4.00 2.93 −−− 3.43 −−− N STYLE 1: PIN 1. EMITTER 2. BASE 3. COLLECTOR ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. 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