BC549C, BC550C Low Noise Transistors NPN Silicon Features • These are Pb−Free Devices* http://onsemi.com COLLECTOR 1 MAXIMUM RATINGS Rating Symbol Collector −Emitter Voltage Value VCEO BC549C BC550C Collector −Base Voltage Vdc 30 45 VCBO BC549C BC550C Emitter −Base Voltage 3 EMITTER Vdc 30 50 VEBO 5.0 Vdc Collector Current − Continuous IC 100 Vdc Total Device Dissipation @ TA = 25°C Derate above = 25°C PD 625 5.0 mW mW/°C Total Device Dissipation @ TA = 25°C Derate above = 25°C PD 1.5 12 W mW/°C TJ, Tstg −55 to +150 °C Characteristic Symbol Max Unit Thermal Resistance, Junction−to−Ambient RqJA 200 °C/W Thermal Resistance, Junction−to−Case RqJC 83.3 °C/W Operating and Storage Junction Temperature Range 2 BASE Unit TO−92 CASE 29 STYLE 17 12 3 STRAIGHT LEAD BULK PACK THERMAL CHARACTERISTICS MARKING DIAGRAM BC5x yC AYWW G G Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. BC5xyC = Device Code x = 4 or 5 y = 9 or 0 A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2007 March, 2007 − Rev. 2 1 Device Package Shipping BC549CG TO−92 (Pb−Free) 5000 Units / Bulk BC550CG TO−92 (Pb−Free) 5000 Units / Bulk Publication Order Number: BC550C/D BC549C, BC550C ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max 45 − − 50 − − 5.0 − − − − − − 15 5.0 − − 15 100 420 270 500 − 800 − − − 0.075 0.3 0.25 0.25 0.6 0.6 − 1.1 − − − 0.55 0.52 0.55 0.62 − − 0.7 − 250 − − 2.5 − 450 600 900 − − 0.6 − 2.5 10 Unit OFF CHARACTERISTICS Collector −Emitter Breakdown Voltage (IC = 10 mAdc, IB = 0) V(BR)CEO Collector −Base Breakdown Voltage (IC = 10 mAdc, IE = 0) V(BR)CBO Emitter −Base Breakdown Voltage (IE = 10 mAdc, IC = 0) V(BR)EBO Collector Cutoff Current (VCB = 30 V, IE = 0) (VCB = 30 V, IE = 0, TA = +125°C) ICBO Emitter Cutoff Current (VEB = 4.0 Vdc, IC = 0) IEBO Vdc Vdc Vdc nAdc mAdc nAdc ON CHARACTERISTICS DC Current Gain (IC = 10 mAdc, VCE = 5.0 Vdc) (IC = 2.0 mAdc, VCE = 5.0 Vdc) hFE Collector −Emitter Saturation Voltage (IC = 10 mAdc, IB = 0.5 mAdc) (IC = 10 mAdc, IB = see note 1) (IC = 100 mAdc, IB = 5.0 mAdc, see note 2) VCE(sat) Base−Emitter Saturation Voltage (IC = 100 mAdc, IB = 5.0 mAdc) VBE(sat) Base−Emitter On Voltage (IC = 10 mAdc, VCE = 5.0 Vdc) (IC = 100 mAdc, VCE = 5.0 Vdc) (IC = 2.0 mAdc, VCE = 5.0 Vdc) VBE(on) − Vdc Vdc Vdc SMALL−SIGNAL CHARACTERISTICS Current −Gain — Bandwidth Product (IC = 10 mAdc, VCE = 5.0 Vdc, f = 100 MHz) fT Collector−Base Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) MHz Ccbo Small−Signal Current Gain (IC = 2.0 mAdc, VCE = 5.0 V, f = 1.0 kHz) pF hfe Noise Figure (IC = 200 mAdc, VCE = 5.0 Vdc, RS = 2.0 kW, f = 1.0 kHz) (IC = 200 mAdc, VCE = 5.0 Vdc, RS = 100 kW, f = 1.0 kHz) dB NF1 NF2 1. IB is value for which IC = 11 mA at VCE = 1.0 V. 2. Pulse test = 300 ms − Duty cycle = 2%. RS − in en IDEAL TRANSISTOR Figure 1. Transistor Noise Model http://onsemi.com 2 BC549C, BC550C 1.0 VCE = 10 V TA = 25°C 1.5 0.9 1.0 0.8 0.6 0.4 VBE(sat) @ IC/IB = 10 0.7 VBE(on) @ VCE = 10 V 0.6 0.5 0.4 0.3 0.2 0.3 VCE(sat) @ IC/IB = 10 0.1 0.2 0.2 0.5 1.0 2.0 5.0 10 20 50 IC, COLLECTOR CURRENT (mAdc) 0 0.1 100 200 Figure 2. Normalized DC Current Gain 0.2 0.5 1.0 2.0 5.0 10 20 IC, COLLECTOR CURRENT (mAdc) 50 100 Figure 3. “Saturation” and “On” Voltages 10 400 300 7.0 100 80 60 C, CAPACITANCE (pF) 200 VCE = 10 V TA = 25°C 40 30 TA = 25°C Cib 5.0 3.0 Cob 2.0 20 0.5 0.7 1.0 2.0 5.0 7.0 10 20 IC, COLLECTOR CURRENT (mAdc) 1.0 0.4 50 0.6 1.0 Figure 4. Current−Gain — Bandwidth Product r b, BASE SPREADING RESISTANCE (OHMS) f T, CURRENT−GAIN BANDWIDTH PRODUCT (MHz) TA = 25°C 0.8 V, VOLTAGE (VOLTS) hFE, NORMALIZED DC CURRENT GAIN 2.0 2.0 4.0 10 VR, REVERSE VOLTAGE (VOLTS) Figure 5. Capacitance 170 160 150 VCE = 10 V f = 1.0 kHz TA = 25°C 140 130 120 0.1 0.2 0.5 1.0 2.0 IC, COLLECTOR CURRENT (mAdc) 5.0 Figure 6. Base Spreading Resistance http://onsemi.com 3 10 20 40 BC549C, BC550C PACKAGE DIMENSIONS TO−92 (TO−226) CASE 29−11 ISSUE AM A B STRAIGHT LEAD BULK PACK R P L SEATING PLANE K D X X G J H V C SECTION X−X 1 N NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. DIM A B C D G H J K L N P R V INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.021 0.045 0.055 0.095 0.105 0.015 0.020 0.500 −−− 0.250 −−− 0.080 0.105 −−− 0.100 0.115 −−− 0.135 −−− MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.407 0.533 1.15 1.39 2.42 2.66 0.39 0.50 12.70 −−− 6.35 −−− 2.04 2.66 −−− 2.54 2.93 −−− 3.43 −−− N A R BENT LEAD TAPE & REEL AMMO PACK B P NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. T SEATING PLANE K D X X G J V 1 C SECTION X−X DIM A B C D G J K N P R V MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.40 0.54 2.40 2.80 0.39 0.50 12.70 −−− 2.04 2.66 1.50 4.00 2.93 −−− 3.43 −−− N STYLE 17: PIN 1. COLLECTOR 2. BASE 3. EMITTER ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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