SOT89 PNP SILICON POWER (SWITCHING) TRANSISTOR FCX1147A ISSSUE 1 - DECEMBER 1998 FEATURES * 2W POWER DISSIPATION * * * * 20A Peak Pulse Current Excellent HFE Characteristics up to 20 Amps Extremely Low Saturation Voltage E.g. 25mv Typ. Extremely Low Equivalent On-resistance; RCE(sat) 53mΩ at 3A Complimentary Type Partmarking Detail - C E C FCX1047A 147 B ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage Collector-Emitter Voltage VCBO -15 V VCEO -12 V Emitter-Base Voltage VEBO -5 V Peak Pulse Current ** ICM -20 A Continuous Collector Current IC -3 A Base Current IB -500 mA Power Dissipation at Tamb=25°C Ptot 1 † 2 ‡ W W Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C † recommended Ptot calculated using FR4 measuring 15x15x0.6mm ‡ Maximum power dissipation is calculated assuming that the device is mounted on FR4 substrate measuring 40x40x0.6mm and using comparable measurement methods adopted by other suppliers. **Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2% Spice parameter data is available upon request for these devices. Refer to the handling instructions for soldering surface mount components. FCX1147A ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). VALUE PARAMETER SYMBOL UNIT CONDITIONS. Collector-Base Breakdown Voltage V(BR)CBO -15 V IC=-100µA Collector-Emitter Breakdown Voltage V(BR)CES -12 V IC=-100µA Collector-Emitter Breakdown Voltage V(BR)CEO -12 V IC=-10mA Collector-Emitter Breakdown Voltage V(BR)CEV -12 V IC=-100µA, VEB=+1V Emitter-Base Breakdown Voltage V(BR)EBO -5 V IE=-100µA Collector Cut-Off Current ICBO -0.3 -10 nA VCB=-12V Emitter Cut-Off Current IEBO -0.3 -10 nA VEB=-4V Collector Emitter Cut-Off Current ICES -0.3 -10 nA VCES=-10V Collector-Emitter Saturation Voltage VCE(sat) -25 -70 -90 -115 -160 -250 -50 -110 -130 -170 -250 -400 mV mV mV mV mV IC=-0.1A, IB=-1mA* IC=-0.5A, IB=-2.5mA* IC=-1A, IB=-6mA* IC=-2A, IB=-20mA* IC=-3A, IB=-30mA* IC=-5A, IB=-50mA* Base-Emitter Saturation Voltage VBE(sat) -820 -1000 mV IC=-3A, IB=-30mA* Base-Emitter Turn-On Voltage VBE(on) -770 -950 mV IC=-3A, VCE=-2V* Static Forward Current Transfer Ratio hFE Transition Frequency fT 115 MHz IC=-50mA, VCE=-10V f=50MHz Output Capacitance Ccb 80 pF VCB=-10V, f=1MHz Switching Times ton 150 ns IC=-4A, IB=-40mA, VCC=-10V toff 220 ns IC=-4A, IB=−40mA, VCC=-10V MIN. 270 250 200 200 150 90 TYP. 450 400 340 300 245 145 50 MAX. IC=-10mA, VCE=-2V* IC=-0.5A, VCE=-2V* IC=-2.0A, VCE=-2V* IC=-3.0A, VCE=-2V* IC=-5.0A, VCE=-2V* IC=-10.0A, VCE=-2V* IC=-20.0A, VCE=-2V* 850 *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2% FCX1147A TYPICAL CHARACTERISTICS 2.0 2.0 +25°C 1.6 1.6 1.2 -55°C +25°C +100°C +150°C 1.2 IC/IB=50 IC/IB=100 IC/IB=200 0.8 0.8 0.4 0.4 0 IC/IB=100 1m 10m IC - 100m 1 10 100 0 1m Collector Current (A) VCE(sat) v IC 10m 100m 1 10 100 IC - Collector Current (A) VCE(sat) v IC 1.2 VCE=2V 600 IC/IB=100 1.0 +100 C +25 C -55 C 0.8 400 0.6 -55°C +25°C +100°C +150°C 0.4 200 0.2 0 0 1m 10m IC - 100m 1 10 1m 100 Collector Current (A) hFE v IC 10m 100m 1 10 100 IC - Collector Current (A) VBE(sat) v IC 1.2 100 VCE=2V 1.0 10 0.8 0.6 -55°C +25°C +100°C +175°C 0.4 1 0.2 0 1m 10m IC - 100m 1 10 Collector Current (A) VBE(on) v IC 100 0.1 100m DC 1s 100ms 10ms 1ms 100µs 1 10 VCE - Collector Emitter Voltage (V) Safe Operating Area 100