2N6027, 2N6028 Preferred Device Programmable Unijunction Transistor Programmable Unijunction Transistor Triggers http://onsemi.com Designed to enable the engineer to “program’’ unijunction characteristics such as RBB, h, IV, and IP by merely selecting two resistor values. Application includes thyristor−trigger, oscillator, pulse and timing circuits. These devices may also be used in special thyristor applications due to the availability of an anode gate. Supplied in an inexpensive TO−92 plastic package for high−volume requirements, this package is readily adaptable for use in automatic insertion equipment. PUTs 40 VOLTS, 300 mW G A K Features • • • • • • Programmable − RBB, h, IV and IP Low On−State Voltage − 1.5 V Maximum @ IF = 50 mA Low Gate to Anode Leakage Current − 10 nA Maximum High Peak Output Voltage − 11 V Typical Low Offset Voltage − 0.35 V Typical (RG = 10 kW) Pb−Free Packages are Available* 1 TO−92 (TO−226AA) CASE 029 STYLE 16 2 3 MARKING DIAGRAM 2N 602x AYWW G G 2N602x = Device Code x = 7 or 8 A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package (Note: Microdot may be in either location) PIN ASSIGNMENT 1 Anode 2 Gate 3 Cathode ORDERING INFORMATION *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2006 May, 2006 − Rev.6 1 See detailed ordering and shipping information in the package dimensions section on page 5 of this data sheet. Preferred devices are recommended choices for future use and best overall value. Publication Order Number: 2N6027/D 2N6027, 2N6028 MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Symbol Value Unit PF 1/qJA 300 4.0 mW mW/°C DC Forward Anode Current* Derate Above 25°C IT 150 2.67 mA mA/°C DC Gate Current* IG "50 mA Power Dissipation* Derate Above 25°C Repetitive Peak Forward Current 100 ms Pulse Width, 1% Duty Cycle 20 ms Pulse Width, 1% Duty Cycle* ITRM A Non−Repetitive Peak Forward Current 10 ms Pulse Width ITSM 5.0 A Gate to Cathode Forward Voltage* VGKF 40 V Gate to Cathode Reverse Voltage* VGKR *5.0 V Gate to Anode Reverse Voltage* VGAR 40 V 1.0 2.0 VAK ±40 V Capacitive Discharge Energy (Note 2) E 250 mJ Power Dissipation (Note 3) PD 300 mW TOPR −50 to +100 °C Junction Temperature TJ −50 to +125 °C Storage Temperature Range Tstg −55 to +150 °C Anode to Cathode Voltage* (Note 1) Operating Temperature Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. *Indicates JEDEC Registered Data 1. Anode positive, RGA = 1000 W Anode negative, RGA = open 2. E = 0.5 CV2 capacitor discharge energy limiting resistor and repetition. 3. Derate current and power above 25°C. THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction−to−Case RqJC 75 °C/W Thermal Resistance, Junction−to−Ambient RqJA 200 °C/W TL 260 °C Maximum Lead Temperature for Soldering Purposes (t1/16″ from case, 10 seconds maximum) http://onsemi.com 2 2N6027, 2N6028 ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Peak Current* (VS = 10 Vdc, RG = 1 MW) Fig. No. Symbol 2,9,11 IP Min Typ Max − − − − 1.25 0.08 4.0 0.70 2.0 0.15 5.0 1.0 0.2 0.2 0.2 0.70 0.50 0.35 1.6 0.6 0.6 − − 70 25 1.5 1.0 18 18 150 150 − − 50 25 − − − − mA 2N6027 2N6028 2N6027 2N6028 (VS = 10 Vdc, RG = 10 kW) Offset Voltage* (VS = 10 Vdc, RG = 1 MW) 1 VT V 2N6027 2N6028 (Both Types) (VS = 10 Vdc, RG = 10 kW) Valley Current* (VS = 10 Vdc, RG = 1 MW) 1,4,5 mA IV 2N6027 2N6028 2N6027 2N6028 2N6027 2N6028 (VS = 10 Vdc, RG = 10 k W) (VS = 10 Vdc, RG = 200 W) Gate to Anode Leakage Current* (VS = 40 Vdc, TA = 25°C, Cathode Open) (VS = 40 Vdc, TA = 75°C, Cathode Open) − Gate to Cathode Leakage Current (VS = 40 Vdc, Anode to Cathode Shorted) − Forward Voltage* (IF = 50 mA Peak) (Note 4) Unit mA IGAO nAdc − − 1.0 3.0 10 − IGKS − 5.0 50 nAdc 1,6 VF − 0.8 1.5 V Peak Output Voltage* (VG = 20 Vdc, CC = 0.2 mF) 3,7 Vo 6.0 11 − V Pulse Voltage Rise Time (VB = 20 Vdc, CC = 0.2 mF) 3 tr − 40 80 ns *Indicates JEDEC Registered Data 4. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%. IA IA +VB A G R2 − VS = VAK R1 V R1 + R2 B + −VP VS VT = VP − VS RG VAK R1 VA RG = R1 R2 R1 + R2 VS K VF VV IGAO 1B − Equivalent Test Circuit for Figure 1A used for electrical characteristics testing (also see Figure 2) 1A − Programmable Unijunction with Program" Resistors R1 and R2 IP IV IF IA IC − Electrical Characteristics Figure 1. Electrical Characterization Adjust for Turn−on Threshold 100 k 1.0% 2N5270 VB 0.01 mF Scope 20 +VB − IP (SENSE) 100 mV = 1.0 nA + Put Under Test +V 510 k 16 k Vo 6.0 V R RG = R/2 VS = VB/2 (See Figure 1) CC vo 20 W 27 k 0.6 V tf R Figure 2. Peak Current (IP) Test Circuit Figure 3. Vo and tr Test Circuit http://onsemi.com 3 t 2N6027, 2N6028 TYPICAL VALLEY CURRENT BEHAVIOR 500 IV, VALLEY CURRENT (m A) IV, VALLEY CURRENT (m A) 1000 RG = 10 kW 100 100 kW 1 MW 100 RG = 10 kW 100 kW 1 MW 10 10 5 10 15 5 −50 20 VS, SUPPLY VOLTAGE (V) +50 +100 +75 Figure 5. Effect of Temperature 10 25 2.0 1.0 0.5 0.2 0.1 0.05 CC = 0.2 mF TA = 25°C (SEE FIGURE 3) TA = 25°C Vo, PEAK OUTPUT VOLTAGE (V) VP, PEAK FORWARD VOLTAGE (V) +25 TA, AMBIENT TEMPERATURE (°C) Figure 4. Effect of Supply Voltage 5.0 0 −25 20 15 10 1000 pF 5.0 0.02 0.01 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 0 0 5.0 5.0 10 15 20 25 30 IF, PEAK FORWARD CURRENT (AMP) VS, SUPPLY VOLTAGE (V) Figure 6. Forward Voltage Figure 7. Peak Output Voltage A E RT R2 P N P N G K + B2 A G RBB = R1 + R2 R1 h= R1 + R2 R1 R2 G A R1 CC K K B1 Circuit Symbol Equivalent Circuit with External Program" Resistors R1 and R2 Figure 8. Programmable Unijunction http://onsemi.com 4 Typical Application 35 40 2N6027, 2N6028 TYPICAL PEAK CURRENT BEHAVIOR 2N6027 100 50 5.0 IP, PEAK CURRENT ( mA) IP, PEAK CURRENT ( mA) 10 3.0 2.0 1.0 RG = 10 kW 0.5 100 kW 1.0 MW 0.3 0.2 TA = 25°C (SEE FIGURE 2) 20 VS = 10 V (SEE FIGURE 2) 10 5.0 2.0 1.0 0.5 RG = 10 kW 100 kW 1.0 MW 0.2 0.1 5.0 10 15 0.1 −50 20 −25 0 +25 +50 +75 VS, SUPPLY VOLTAGE (V) TA, AMBIENT TEMPERATURE (°C) Figure 9. Effect of Supply Voltage and RG Figure 10. Effect of Temperature and RG +100 10 5.0 IP, PEAK CURRENT ( mA) IP, PEAK CURRENT ( mA) 2N6028 1.0 0.7 0.5 RG = 10 kW 0.3 0.2 100 kW 0.1 0.07 0.05 1.0 MW 0.03 0.02 TA = 25°C (SEE FIGURE 2) 2.0 VS = 10 V (SEE FIGURE 2) 1.0 0.5 0.2 RG = 10 kW 0.1 0.05 100 kW 1.0 MW 0.02 0.01 5.0 10 15 VS, SUPPLY VOLTAGE (V) 0.01 −50 20 Figure 11. Effect of Supply Voltage and RG −25 +25 +75 0 +50 TA, AMBIENT TEMPERATURE (°C) +100 Figure 12. Effect of Temperature and RG ORDERING INFORMATION U.S. European Equivalent Shipping† Description of TO−92 Tape Orientation 5000 Units / Box N/A − Bulk 2000 / Tape & Reel Round side of TO−92 and adhesive tape visible 2N6027 2N6027G 2N6028 2N6028G 2N6027RLRA 2N6027RLRAG 2N6028RLRA 2N6027RL1 2N6027RL1G 2N6028RLRAG 2N6028RLRM Flat side of TO−92 and adhesive tape visible 2N6028RLRMG 2000 / Tape & Ammo Box 2N6028RLRP Round side of TO−92 and adhesive tape visible 2N6028RLRPG †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. *The “G’’ suffix indicates Pb−Free package available. http://onsemi.com 5 2N6027, 2N6028 PACKAGE DIMENSIONS TO−92 (TO−226AA) CASE 029−11 ISSUE AL A NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. B R P L SEATING PLANE K DIM A B C D G H J K L N P R V D X X G J H V C SECTION X−X 1 N N INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.021 0.045 0.055 0.095 0.105 0.015 0.020 0.500 −−− 0.250 −−− 0.080 0.105 −−− 0.100 0.115 −−− 0.135 −−− MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.407 0.533 1.15 1.39 2.42 2.66 0.39 0.50 12.70 −−− 6.35 −−− 2.04 2.66 −−− 2.54 2.93 −−− 3.43 −−− STYLE 16: PIN 1. ANODE 2. GATE 3. CATHODE ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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