ONSEMI MMBZ27VCWT1G

MMBZ27VCWT1G
40 Watt Peak Power
Zener Transient Voltage
Suppressors
SC−70 Dual Common Cathode Zeners
for ESD Protection
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These dual monolithic silicon zener diodes are designed for
applications requiring transient overvoltage protection capability. They
are intended for use in voltage and ESD sensitive equipment such as
computers, printers, business machines, communication systems,
medical equipment and other applications. Their dual junction common
cathode design protects two separate lines using only one package.
These devices are ideal for situations where board space is at a
premium.
1
3
2
PIN 1. ANODE
2. ANODE
3. CATHODE
MARKING
DIAGRAM
Specification Features:
• SC−70 Package Allows Either Two Separate Unidirectional
Configurations or a Single Bidirectional Configuration
• Working Peak Reverse Voltage Range − 22 V
• Standard Zener Breakdown Voltage − 27 V
• Peak Power − 40 W @ 1.0 ms (Bidirectional),
per Figure 4 Waveform
Body Model
Low Leakage < 100 nA
Flammability Rating: UL 94 V−O
This is a Pb−Free Device
ORDERING INFORMATION
Mechanical Characteristics:
CASE: Void-free, transfer-molded, thermosetting plastic case
FINISH: Corrosion resistant finish, easily solderable
MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES:
260°C for 10 Seconds
© Semiconductor Components Industries, LLC, 2008
May, 2008 − Rev. 0
1
AC = Specific Device Code
M
= Date Code
G
= Pb−Free Package
(Note: Microdot may be in either location)
• ESD Rating of Class N (exceeding 16 kV) per the Human
•
•
•
AC MG
G
SC−70
CASE 419
STYLE 4
1
Device
Package
Shipping†
MMBZ27VCWT1G
SC−70
(Pb−Free)
3000/Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Publication Order Number:
MMBZ27VCW/D
MMBZ27VCWT1G
MAXIMUM RATINGS
Symbol
Value
Unit
Peak Power Dissipation @ 1.0 ms (Note 1) @ TL ≤ 25°C
Rating
Ppk
40
Watts
Total Power Dissipation on FR−5 Board (Note 2) @ TA = 25°C
Derate above 25°C
°PD°
200
1.6
°mW°
mW/°C
Thermal Resistance Junction−to−Ambient
RqJA
618
°C/W
Junction and Storage Temperature Range
TJ, Tstg
− 55 to +150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. Nonrepetitive current pulse per Figure 4 and derate above TA = 25°C per Figure 5.
2. FR−5 = 1.0 x 0.75 x 0.62 in.
ELECTRICAL CHARACTERISTICS
I
(TA = 25°C unless otherwise noted)
IF
UNIDIRECTIONAL (Circuit tied to Pins 1 and 3 or 2 and 3)
Symbol
Parameter
IPP
Maximum Reverse Peak Pulse Current
VC
Clamping Voltage @ IPP
VRWM
IR
VBR
IT
VBR
VC VBR VRWM
Working Peak Reverse Voltage
V
IR VF
IT
Maximum Reverse Leakage Current @ VRWM
Breakdown Voltage @ IT
Test Current
IPP
Maximum Temperature Coefficient of VBR
IF
Forward Current
VF
Forward Voltage @ IF
Uni−Directional TVS
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
UNIDIRECTIONAL (Circuit tied to Pins 1 and 3 or Pins 2 and 3)
(VF = 1.1 V Max @ IF = 200 mA)
VC @ IPP (Note 4)
Breakdown Voltage
Device
MMBZ27VCWT1G
VBR (Note 3) (V)
Device
Marking
VRWM
IR @ VRWM
@ IT
VC
IPP
VBR
Volts
nA
Min
Nom
Max
mA
V
A
mV/5C
AC
22
50
25.65
27
28.35
1.0
38
1.0
26
3. VBR measured at pulse test current IT at an ambient temperature of 25°C.
4. Surge current waveform per Figure 4 and derate per Figure 5
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2
MMBZ27VCWT1G
BREAKDOWN VOLTAGE (VOLTS) (VBR @ I T )
TYPICAL CHARACTERISTICS
29
BIDIRECTIONAL
28
27
26
25
-55
+125
+25
+85
TEMPERATURE (°C)
Figure 1. Typical Breakdown Voltage
versus Temperature
100
250
PD , POWER DISSIPATION (mW)
300
IR (nA)
10000
10
1
0.1
0.01
-40
+25
+85
TEMPERATURE (°C)
ALUMINA SUBSTRATE
200
150
100
FR-5 BOARD
50
0
+125
0
tr ≤ 10 ms
PEAK VALUE—IPP
VALUE (%)
100
PULSE WIDTH (tP) IS DEFINED
AS THAT POINT WHERE THE
PEAK CURRENT DECAYS TO
50% OF IPP.
IPP
HALF VALUE—
2
50
tP
0
0
1
2
3
t, TIME (ms)
4
50
75
100
125
TEMPERATURE (°C)
150
175
Figure 3. Steady State Power Derating Curve
PEAK PULSE DERATING IN % OF PEAK POWER
OR CURRENT @ TA = 25 ° C
Figure 2. Typical Leakage Current
versus Temperature
25
100
90
80
70
60
50
40
30
20
10
0
0
Figure 4. Pulse Waveform
25
50
75
100
125
150
TA, AMBIENT TEMPERATURE (°C)
Figure 5. Pulse Derating Curve
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3
175
200
MMBZ27VCWT1G
TYPICAL APPLICATIONS
VBatt
ECU Connector
Single Wire
CAN Transceiver
47 mH
Bus
RLoad
9.09 kW 1%
*
Load
CLoad
220 pF 10%
Loss of
Ground
Protection
Circuit
GND
*ESD Protection − MMBZ27VCWT1 or equivalent. May be
located in each ECU (CLoad needs to be reduced accordingly)
or at a central point near the DLC.
Figure 6. Single Wire CAN Network
Figure is the recommended solution for transient EMI/ESD protection. This circuit is shown in the
Society of Automotive Engineers February, 2000 J2411 “Single Wire CAN Network for Vehicle Applications” specification
(Figure 6, page 11). Note: the dual common anode zener configuration shown above is electrically equivalent to a dual common
cathode zener configuration.
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4
MMBZ27VCWT1G
PACKAGE DIMENSIONS
SC−70 (SOT−323)
CASE 419−04
ISSUE M
D
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
e1
3
E
HE
1
DIM
A
A1
A2
b
c
D
E
e
e1
L
HE
2
b
e
0.05 (0.002)
c
A2
A
0.30
0.10
1.80
1.15
1.20
2.00
MILLIMETERS
NOM
MAX
0.90
1.00
0.05
0.10
0.7 REF
0.35
0.40
0.18
0.25
2.10
2.20
1.24
1.35
1.30
1.40
0.65 BSC
0.425 REF
2.10
2.40
MIN
0.032
0.000
0.012
0.004
0.071
0.045
0.047
0.079
INCHES
NOM
0.035
0.002
0.028 REF
0.014
0.007
0.083
0.049
0.051
0.026 BSC
0.017 REF
0.083
MAX
0.040
0.004
0.016
0.010
0.087
0.053
0.055
0.095
STYLE 4:
PIN 1. CATHODE
2. CATHODE
3. ANODE
L
A1
MIN
0.80
0.00
SOLDERING FOOTPRINT*
0.65
0.025
0.65
0.025
1.9
0.075
0.9
0.035
0.7
0.028
SCALE 10:1
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
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Phone: 81−3−5773−3850
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For additional information, please contact your local
Sales Representative
MMBZ27VCW/D