ONSEMI NTHD5902T1

NTHD5902T1
Power MOSFET
Dual N−Channel ChipFETE
2.9 Amps, 30 Volts
Features
• Low RDS(on) for Higher Efficiency
• Miniature ChipFET Surface Mount Package Saves Board Space
http://onsemi.com
DUAL N−CHANNEL
2.9 AMPS, 30 VOLTS
RDS(on) = 85 mW
Applications
• Power Management in Portable and Battery−Powered Products; i.e.,
Cellular and Cordless Telephones and PCMCIA Cards
Rating
Symbol
Steady
State
5 secs
Unit
Drain−Source Voltage
VDS
30
V
Gate−Source Voltage
VGS
"20
V
Continuous Drain Current
(TJ = 150°C) (Note 1)
TA = 25°C
TA = 85°C
ID
Pulsed Drain Current
IDM
Continuous Source Current
(Diode Conduction) (Note 1)
IS
Maximum Power Dissipation
(Note 1)
TA = 25°C
TA = 85°C
PD
Operating Junction and Storage
Temperature Range
"2.9
"2.1
1.8
S2
S1
N−Channel MOSFET
N−Channel MOSFET
A
"10
0.9
A
W
2.1
1.1
TJ, Tstg
G2
G1
A
"3.9
"2.8
D2
D1
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
1.1
0.6
−55 to +150
ChipFET
CASE 1206A
STYLE 2
°C
1. Surface Mounted on 1″ x 1″ FR4 Board.
MARKING
DIAGRAM
PIN CONNECTIONS
8
1
S1
1
8
D1
7
2
G1
2
7
D2
6
3
S2
3
D2
5
4
G2
4
A6
D1
6
5
A6 = Specific Device Code
ORDERING INFORMATION
© Semiconductor Components Industries, LLC, 2005
February, 2005 − Rev. XXX
1
Device
Package
Shipping
NTHD5902T1
ChipFET
3000/Tape & Reel
Publication Order Number:
NTHD5902T1/D
NTHD5902T1
THERMAL CHARACTERISTICS
Characteristic
Symbol
Maximum Junction−to−Ambient (Note 2)
t v 5 sec
Steady State
RthJA
Maximum Junction−to−Foot
Steady State
RthJF
Typ
Max
50
90
60
110
30
40
Unit
°C/W
°C/W
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic
Symbol
Test Condition
Min
Typ
Max
Unit
VGS(th)
VDS = VGS, ID = 250 mA
1.0
−
−
V
Gate−Body Leakage
IGSS
VDS = 0 V, VGS = "20 V
−
−
"100
nA
Zero Gate Voltage Drain Current
IDSS
VDS = 24 V, VGS = 0 V
−
−
1.0
mA
VDS = 24 V, VGS = 0 V,
TJ = 85°C
−
−
5.0
ID(on)
VDS w 5.0 V, VGS = 10 V
10
−
−
A
rDS(on)
( )
VGS = 10 V, ID = 2.9 A
−
0.072
0.085
W
VGS = 4.5 V, ID = 2.2 A
−
0.120
0.143
gfs
VDS = 15 V, ID = 2.9 A
−
20
−
S
VSD
IS = 0.9 A, VGS = 0 V
−
0.8
1.2
V
−
5.0
7.5
nC
−
0.8
−
−
1.0
−
−
7.0
11
−
12
18
−
12
18
−
7.0
11
−
40
80
Static
Gate Threshold Voltage
On−State Drain Current (Note 3)
Drain−Source On−State Resistance (Note 3)
Forward Transconductance (Note 3)
Diode Forward Voltage (Note 3)
Dynamic (Note 4)
Total Gate Charge
Qg
VDS = 15 V
V, VGS = 10 V
V,
ID = 2.9 A
Gate−Source Charge
Qgs
Gate−Drain Charge
Qgd
Turn−On Delay Time
td(on)
Rise Time
Turn−Off Delay Time
tr
td(off)
Fall Time
tf
Source−Drain Reverse Recovery Time
trr
VDD = 15 V, RL = 15 W
ID ^ 1.0
10A
A, VGEN = 10 V,
V
RG = 6 W
IF = 0.9 A, di/dt = 100 A/ms
2. Surface Mounted on 1″ x 1″ FR4 Board.
3. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%.
4. Guaranteed by design, not subject to production testing.
http://onsemi.com
2
ns
NTHD5902T1
TYPICAL ELECTRICAL CHARACTERISTICS
10
10
VGS = 10
thru 5 V
8
6
ID,Drain Current (A)
ID,Drain Current (A)
8
4V
4
2
0
0.5
4
125°C
2
3V
0
6
1.0
1.5
2.0
2.5
VDS, Drain−to−Source Voltage (V)
0
3.0
25°C
0
Figure 1. Output Characteristics
300
0.15
VGS = 4.5 V
0.10
VGS = 10 V
0.05
200
Coss
0
2
4
6
ID, Drain Current (A)
8
10
0
Crss
0
4
8
12
16
VDS, Drain−to−Source Voltage (V)
Figure 3. On−Resistance vs. Drain Current
20
Figure 4. Capacitance
1.8
10
VDS = 15 V
ID = 2.9 A
8
r DS(on),On−Resistance ( Ω )
(Normalized)
VGS,Gate−to−Source Voltage (V)
5
Ciss
100
6
4
2
0
4
400
C, Capacitance (pF)
r DS(on),On−Resistance ( Ω )
1
2
3
VGS, Gate−to−Source Voltage (V)
Figure 2. Transfer Characteristics
0.20
0
TC = −55°C
0
1
2
3
Qg, Total Gate Charge (nC)
4
5
1.6
VGS = 10 V
ID = 2.9 A
1.4
1.2
1.0
0.8
0.6
−50
Figure 5. Gate Charge
−25
0
25
50
75
100
TJ, Junction Temperature (°C)
Figure 6. On−Resistance vs.
Junction Temperature
http://onsemi.com
3
125
150
NTHD5902T1
TYPICAL ELECTRICAL CHARACTERISTICS
0.20
rDS(on),On−Resistance ( Ω )
I S,Source Current (A)
10
TJ = 150°C
TJ = 25°C
1
0
0.2
0.4
0.6
0.8
1.0
VDS, Drain−to−Source Voltage (V)
0.15
ID = 2.9 A
0.10
0.05
0
1.2
Figure 7. Source−Drain Diode Forward Voltage
10
50
0.2
40
ID = 250 mA
−0.0
Power (W)
V GS (th),Varience (V)
2
4
6
8
VGS, Gate−to−Source Voltage (V)
Figure 8. On−Resistance vs. Gate−to−Source
Voltage
0.4
−0.2
−0.4
30
20
10
−0.6
−0.8
−50
0
−25
0
25
50
75
TJ, Temperature (°C)
100
125
0
10−4
150
Figure 9. Threshold Voltage
10−3
10−2
10 −1
1
Time (sec)
10
Figure 10. Single Pulse Power
http://onsemi.com
4
100
600
NTHD5902T1
TYPICAL ELECTRICAL CHARACTERISTICS
Normalized Effective Transient
Thermal Impedance
2
1
Duty Cycle = 0.5
Notes:
PDM
0.2
0.1
t1
0.1
0.02
Single Pulse
0.01
10−4
10−3
t2
t1
1. Duty Cycle, D = t
2
2. Per Unit Base = RthJA = 90°C/W
3. TJM − TA = PDMZthJA(t)
4. Surface Mounted
0.05
10−2
10 −1
1
Square Wave Pulse Duration (sec)
10
100
600
Figure 11. Normalized Thermal Transient Impedance, Junction−to−Ambient
Normalized Effective Transient
Thermal Impedance
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10−4
10−3
10−2
10 −1
Square Wave Pulse Duration (sec)
1
Figure 12. Normalized Thermal Transient Impedance, Junction−to−Foot
http://onsemi.com
5
10
NTHD5902T1
Notes
http://onsemi.com
6
NTHD5902T1
PACKAGE DIMENSIONS
ChipFET
CASE 1206A−03
ISSUE D
A
8
7
M
6
K
5
S
1
L
5
6
7
8
4
3
2
1
B
2
3
G
4
D
J
STYLE 2:
PIN 1.
2.
3.
4.
5.
6.
7.
8.
C
0.05 (0.002)
http://onsemi.com
7
SOURCE 1
GATE 1
SOURCE 2
GATE 2
DRAIN 2
DRAIN 2
DRAIN 1
DRAIN 1
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. MOLD GATE BURRS SHALL NOT EXCEED 0.13 MM
PER SIDE.
4. LEADFRAME TO MOLDED BODY OFFSET IN
HORIZONTAL AND VERTICAL SHALL NOT EXCEED
0.08 MM.
5. DIMENSIONS A AND B EXCLUSIVE OF MOLD GATE
BURRS.
6. NO MOLD FLASH ALLOWED ON THE TOP AND
BOTTOM LEAD SURFACE.
7. 1206A−01 AND 1206A−02 OBSOLETE. NEW
STANDARD IS 1206A−03.
DIM
A
B
C
D
G
J
K
L
M
S
MILLIMETERS
MIN
MAX
2.95
3.10
1.55
1.70
1.00
1.10
0.25
0.35
0.65 BSC
0.10
0.20
0.28
0.42
0.55 BSC
5 ° NOM
1.80
2.00
INCHES
MIN
MAX
0.116
0.122
0.061
0.067
0.039
0.043
0.010
0.014
0.025 BSC
0.004
0.008
0.011
0.017
0.022 BSC
5 ° NOM
0.072
0.080
NTHD5902T1
ChipFET is a trademark of Vishay Siliconix.
ON Semiconductor is a trademark and
is a registered trademark of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right
to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products
for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any
and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets
and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must
be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others.
SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death
may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC
and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees
arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that
SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer.
PUBLICATION ORDERING INFORMATION
JAPAN: ON Semiconductor, Japan Customer Focus Center
4−32−1 Nishi−Gotanda, Shinagawa−ku, Tokyo, Japan 141−0031
Phone: 81−3−5740−2700
Email: [email protected]
Literature Fulfillment:
Literature Distribution Center for ON Semiconductor
P.O. Box 5163, Denver, Colorado 80217 USA
Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada
Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada
Email: [email protected]
ON Semiconductor Website: http://onsemi.com
For additional information, please contact your local
Sales Representative.
N. American Technical Support: 800−282−9855 Toll Free USA/Canada
http://onsemi.com
8
NTHD5902T1/D