MPS6726 One Watt Amplifier Transistors PNP Silicon http://onsemi.com Features • This is a Pb−Free Device* COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage VCEO −30 Vdc Collector −Base Voltage VCBO −40 Vdc Emitter −Base Voltage VEBO −5.0 Vdc Collector Current − Continuous IC −1.0 Adc Total Device Dissipation @ TA = 25°C Derate above 25°C PD 1.0 8.0 W mW/°C Total Device Dissipation @ TC = 25°C Derate above 25°C PD 2.5 20 W mW/°C TJ, Tstg −55 to +150 °C Operating and Storage Junction Temperature Range 2 BASE 1 EMITTER 1 12 THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction−to−Ambient RqJA 125 °C/W Thermal Resistance, Junction−to−Case RqJC 50 °C/W 3 STRAIGHT LEAD BULK PACK Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 2 3 BENT LEAD TAPE & REEL AMMO PACK TO−92 1 WATT (TO−226) CASE 29−10 STYLE 1 MARKING DIAGRAM MPS 6726 AYWW G G A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION Device MPS6726G Package Shipping† TO−92 (Pb−Free) 5000 Units / Bulk *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2010 August, 2010 − Rev. 4 1 Publication Order Number: MPS6726/D MPS6726 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max −30 − −40 − −5.0 − − −0.1 − −0.1 60 50 − 250 − −0.5 − −1.2 − 30 2.5 25 Unit OFF CHARACTERISTICS Collector −Emitter Breakdown Voltage (IC = −10 mAdc, IB = 0) V(BR)CEO Collector −Base Breakdown Voltage (IC = −100 mAdc, IE = 0) V(BR)CBO Emitter −Base Breakdown Voltage (IE = −100 mAdc, IC = 0) V(BR)EBO Collector Cutoff Current (VCB = −40 Vdc, IE = 0) ICBO Emitter Cutoff Current (VEB = −5.0 Vdc, IC = 0) IEBO Vdc Vdc Vdc mAdc mAdc ON CHARACTERISTICS (Note 1) DC Current Gain (IC = −100 mAdc, VCE = −1.0 Vdc) (IC = −1000 mAdc, VCE = −1.0 Vdc) hFE Collector −Emitter Saturation Voltage (IC = −1000 mAdc, IB = −100 mAdc) VCE(sat) Base −Emitter On Voltage (IC = −1000 mAdc, VCE = −1.0 Vdc) VBE(on) − Vdc Vdc SMALL−SIGNAL CHARACTERISTICS Collector−Base Capacitance (VCB = −10 Vdc, IE = 0, f = 1.0 MHz) Ccb Small−Signal Current Gain (IC = −50 mAdc, VCE = −10 Vdc, f = 20 MHz) hfe pF − 1. Pulse Test: Pulse Width v 300 ms; Duty Cycle v 2.0%. -1.0 VCE , COLLECTOR VOLTAGE (VOLTS) h FE , CURRENT GAIN 200 100 70 VCE = -1.0 V TJ = 25°C 50 20 -10 -20 -50 -100 -200 -500 -1000 -0.8 IC = -10 mA IC = -50 mA IC = IC = IC = IC = -100 -250 -500 mA -1000 mA mA mA -0.6 -0.4 -0.2 TJ = 25°C 0 -0.01 -0.02 -0.05 -0.1 -0.2 -0.5 -1.0 -2.0 -5.0 -10 -20 IC, COLLECTOR CURRENT (mA) IB, BASE CURRENT (mA) Figure 1. DC Current Gain Figure 2. Collector Saturation Region http://onsemi.com 2 -50 -100 MPS6726 qV B, TEMPERATURE COEFFICIENT (mV/ °C) -1.0 TJ = 25°C VBE(SAT) @ IC/IB = 10 -0.6 VBE(ON) @ VCE = -1.0 V -0.4 -0.2 VCE(SAT) @ IC/IB = 10 -5.0 -10 -50 -100 -200 -20 -500 -1000 -1.2 -1.6 qVB for VBE -2.0 -2.4 -2.8 -1.0 -2.0 -5.0 -10 -20 -50 -100 -200 -500 -1000 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 3. “ON” Voltages Figure 4. Temperature Coefficient 300 160 TJ = 25°C 200 C, CAPACITANCE (pF) f T , CURRENT-GAIN - BANDWIDTH PRODUCT (MHz) 0 -1.0 -2.0 VCE = -10 V TJ = 25°C f = 20 MHz 100 70 50 120 80 Cibo 40 Cobo 30 -10 0 -20 -50 -100 -200 -500 -1000 Cobo Cibo IC, COLLECTOR CURRENT (mA) -5.0 -1.0 -10 -15 -20 -2.0 -3.0 -4.0 VR, REVERSE VOLTAGE (VOLTS) Figure 5. Current Gain — Bandwidth Product Figure 6. Capacitance -1.0 k 1.0 s I C , COLLECTOR CURRENT (mA) V, VOLTAGE (VOLTS) -0.8 -0.8 -500 100 ms TA = 25°C TC = 25°C -200 -100 1.0 ms DUTY CYCLE ≤ 10% MPS6726 MPS6727 -50 CURRENT LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT -20 -10 -1.0 -2.0 -5.0 -10 -20 -30 -40 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 7. Active Region — Safe Operating Area http://onsemi.com 3 -25 -5.0 MPS6726 PACKAGE DIMENSIONS TO−92 (TO−226) 1 WATT CASE 29−10 ISSUE O A B R STRAIGHT LEAD BULK PACK P L F K D X X G J H V C SECTION X−X N 1 N NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1994. 2. CONTROLLING DIMENSION: INCHES. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. DIMENSION F APPLIES BETWEEN DIMENSIONS P AND L. DIMENSIONS D AND J APPLY BETWEEN DI MENSIONS L AND K MINIMUM. THE LEAD DIMENSIONS ARE UNCONTROLLED IN DIMENSION P AND BEYOND DIMENSION K MINIMUM. DIM A B C D F G H J K L N P R V INCHES MIN MAX 0.175 0.205 0.290 0.310 0.125 0.165 0.018 0.021 0.016 0.019 0.045 0.055 0.095 0.105 0.018 0.024 0.500 --0.250 --0.080 0.105 --0.100 0.135 --0.135 --- MILLIMETERS MIN MAX 4.44 5.21 7.37 7.87 3.18 4.19 0.46 0.53 0.41 0.48 1.15 1.39 2.42 2.66 0.46 0.61 12.70 --6.35 --2.04 2.66 --2.54 3.43 --3.43 --- STYLE 1: PIN 1. EMITTER 2. BASE 3. COLLECTOR A BENT LEAD TAPE & REEL AMMO PACK R B P T SEATING PLANE G K D X X J V 1 C N SECTION X−X NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: INCHES. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. DIMENSION F APPLIES BETWEEN DIMENSIONS P AND L. DIMENSIONS D AND J APPLY BETWEEN DIMENSIONS L AND K MINIMUM. THE LEAD DIMENSIONS ARE UNCONTROLLED IN DIMENSION P AND BEYOND DIMENSION K MINIMUM. DIM A B C D G J K N P R V INCHES MIN MAX 0.175 0.205 0.290 0.310 0.125 0.165 0.018 0.021 0.094 0.102 0.018 0.024 0.500 --0.080 0.105 --0.100 0.135 --0.135 --- MILLIMETERS MIN MAX 4.44 5.21 7.37 7.87 3.18 4.19 0.46 0.53 2.40 2.80 0.46 0.61 12.70 --2.04 2.66 --2.54 3.43 --3.43 --- ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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