DIODES MMDT3906VC

SPICE MODEL: MMDT3906VC
MMDT3906VC
NEW PRODUCT
Lead-free Green
DUAL PNP SMALL SIGNAL SURFACE MOUNT
TRANSISTOR
Features
•
•
•
•
•
Epitaxial Planar Die Construction
A
Ideal for Low Power Amplification and Switching
B2
C1
Ultra-Small Surface Mount Package
E2
SOT-563
Lead Free By Design/RoHS Compliant (Note 1)
B C
"Green" Device (Note 4)
E1
Mechanical Data
•
•
•
•
•
•
•
•
C2
B1
D
G
Case: SOT-563
Case Material: Molded Plastic, "Green" Molding Compound.
UL Flammability Classification Rating 94V-0
Min
Max
Typ
A
0.15
0.30
0.25
B
1.10
1.25
1.20
C
1.55
1.70
1.60
D
M
K
Moisture Sensitivity: Level 1 per J-STD-020C
Terminal Connections: See Diagram
H
Terminals: Finish - Matte Tin annealed over Copper
leadframe. Solderable per MIL-STD-202, Method 208
L
SEE NOTE 2
Marking & Type Code Information: See Last Page
Ordering Information: See Last Page
Dim
0.50
G
0.90
1.10
1.00
H
1.50
1.70
1.60
K
0.56
0.60
0.60
L
0.10
0.30
0.20
M
0.10
0.18

All Dimensions in mm
C1
B2
E2
E1
B1
C2
Weight: 0.003 grams (approximate)
Maximum Ratings
@ TA = 25°C unless otherwise specified
Symbol
Value
Unit
Collector-Base Voltage
Characteristic
VCBO
-40
V
Collector-Emitter Voltage
VCEO
-40
V
Emitter-Base Voltage
VEBO
-5.0
V
IC
-200
mA
Collector Current - Continuous
Power Dissipation (Note 3)
Thermal Resistance, Junction to Ambient
Operating and Storage and Temperature Range
Thermal Characteristics
150
mW
833
°C/W
Tj, TSTG
-55 to +150
°C
Symbol
Value
Unit
Pd
150
mW
RθJA
833
°C/W
@ TA = 25°C unless otherwise specified
Characteristic
Power Dissipation (Note 3)
Thermal Resistance, Junction to Ambient
Notes:
Pd
RθJA
1. No purposefully added lead.
2. Package is non-polarized. Parts may be on reel in orientation illustrated, 180° rotated, or mixed (both ways).
3. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout
document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
4. Diodes Inc's "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php
DS30640 Rev. 3 - 2
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MMDT3906VC
 Diodes Incorporated
NEW PRODUCT
Electrical Characteristics
@ TA = 25°C unless otherwise specified
Characteristic
Symbol
Min
Max
Unit
Test Condition
Collector-Base Breakdown Voltage
V(BR)CBO
-40

V
IC = -10µA, IE = 0
Collector-Emitter Breakdown Voltage
V(BR)CEO
-40

V
IC = -1.0mA, IB = 0
Emitter-Base Breakdown Voltage
V(BR)EBO
-5.0

V
IE = -10µA, IC = 0
ICEX

-50
nA
VCE = -30V, VEB(OFF) = -3.0V
IBL

-50
nA
VCE = -30V, VEB(OFF) = -3.0V
hFE
60
80
100
60
30


300



IC = -100µA, VCE =
IC = -1.0mA, VCE =
IC = -10mA, VCE =
IC = -50mA, VCE =
IC = -100mA, VCE =
Collector-Emitter Saturation Voltage
VCE(SAT)

-0.25
-0.40
V
IC = -10mA, IB = -1.0mA
IC = -50mA, IB = -5.0mA
Base-Emitter Saturation Voltage
VBE(SAT)
-0.65

-0.85
-0.95
V
IC = -10mA, IB = -1.0mA
IC = -50mA, IB = -5.0mA
Output Capacitance
Cobo

4.5
pF
VCB = -5.0V, f = 1.0MHz, IE = 0
Input Capacitance
Cibo

10
pF
VEB = -0.5V, f = 1.0MHz, IC = 0
Input Impedance
hie
2.0
12
kΩ
Voltage Feedback Ratio
hre
0.1
10
x 10-4
Small Signal Current Gain
hfe
100
400

Output Admittance
hoe
3.0
60
µS
Current Gain-Bandwidth Product
fT
250

MHz
VCE = -20V, IC = -10mA,
f = 100MHz
Noise Figure
NF

4.0
dB
VCE = -5.0V, IC = -100µA,
RS = 1.0kΩ, f = 1.0kHz
Delay Time
td

35
ns
Rise Time
tr

35
ns
Storage Time
ts

225
ns
Fall Time
tf

75
ns
OFF CHARACTERISTICS (Note 5)
Collector Cutoff Current
Base Cutoff Current
ON CHARACTERISTICS (Note 5)
DC Current Gain
-1.0V
-1.0V
-1.0V
-1.0V
-1.0V
SMALL SIGNAL CHARACTERISTICS
VCE = 10V, IC = 1.0mA,
f = 1.0kHz
SWITCHING CHARACTERISTICS
Notes:
VCC = -3.0V, IC = -10mA,
VBE(off) = 0.5V, IB1 = -1.0mA
VCC = -3.0V, IC = -10mA,
IB1 = IB2 = -1.0mA
5. Short duration test pulse used to minimize self-heating.
DS30640 Rev. 3 - 2
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MMDT3906VC
100
CIBO, INPUT CAPACITANCE (pF)
COBO, OUTPUT CAPACITANCE (pF)
Pd, POWER DISSIPATION (mW)
f = 1MHz
200
150
100
50
10
Cibo
Cobo
1
0.1
0
-50
0
50
100
150
1000
10
100
10
VCE(SAT), COLLECTOR-EMITTER (V)
SATURATION VOLTAGE
hFE, DC CURRENT GAIN
1
VCB, COLLECTOR-BASE VOLTAGE (V)
Fig. 2, Input and Output Capacitance vs.
Collector-Base Voltage
TA, AMBIENT TEMPERATURE (°C)
Fig. 1, Derating Curve - Total
TA = 125°C
100
TA = +25°C
TA = -25°C
10
IC
IB = 10
1
0.1
VCE = 1.0V
1
0.01
1
0.1
10
100
1000
1
IC, COLLECTOR CURRENT (mA)
Fig. 3, Typical DC Current Gain vs
Collector Current
10
100
1000
IC, COLLECTOR CURRENT (mA)
Fig. 4, Typical Collector-Emitter Saturation Voltage
vs. Collector Current
1.0
VBE(SAT), BASE-EMITTER (V)
SATURATION VOLTAGE
NEW PRODUCT
250
0.9
0.8
0.7
0.6
IC
IB = 10
0.5
1
10
100
IC, COLLECTOR CURRENT (mA)
Fig. 5, Typical Base-Emitter
Saturation Voltage vs. Collector Current
DS30640 Rev. 3 - 2
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MMDT3906VC
NEW PRODUCT
Ordering Information
Notes:
(Note 6)
Device
Packaging
Shipping
MMDT3906VC-7
SOT-563
3000/Tape & Reel
6. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
ARK = Product Type Marking Code
YM = Date Code Marking
Y = Year ex: R = 2004
M = Month ex: 9 = September
ARK YM
Date Code Key
Year
2004
2005
2006
2007
2008
2009
Code
R
S
T
U
V
W
Month
Jan
Feb
March
Apr
May
Jun
Jul
Aug
Sep
Oct
Nov
Dec
Code
1
2
3
4
5
6
7
8
9
O
N
D
DS30640 Rev. 3 - 2
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MMDT3906VC