SPICE MODEL: MMDT3904V MMDT3904V Pb Lead-free DUAL NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features · · · · Epitaxial Planar Die Construction Ideal for Low Power Amplification and Switching A Ultra-Small Surface Mount Package C1 Lead Free By Design/RoHS Compliant (Note 4) B2 E2 SOT-563 B C Mechanical Data · · E1 D Case: SOT-563 G Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 · · Moisture Sensitivity: Level 1 per J-STD-020C · · Terminal Connections: See Diagram · · · · C2 B1 Dim Min Max Typ A 0.15 0.30 0.25 B 1.10 1.25 1.20 C 1.55 1.70 1.60 D M K Terminals: Finish - Matte Tin annealed over Alloy 42 leadframe. Solderable per MIL-STD-202, Method 208 G 0.90 1.10 1.00 H 1.50 1.70 1.60 L K 0.56 0.60 0.60 SEE NOTE 1 L 0.10 0.30 0.20 M 0.10 0.18 0.11 H Terminals: Lead bearing terminal plating available. See Ordering information Page 1, Note 5 Marking (See Page 2): KAP 0.50 C1 B2 E2 E1 B1 C2 All Dimensions in mm Ordering Information: See Below Date Code Information: See Page 2 Weight: 0.003 grams (approximate) Maximum Ratings @ TA = 25°C unless otherwise specified Symbol Value Unit Collector-Base Voltage Characteristic VCBO 60 V Collector-Emitter Voltage VCEO 40 V Emitter-Base Voltage VEBO 6.0 V Collector Current - Continuous IC 200 mA Power Dissipation (Note 2) Pd 200 mW RqJA 625 °C/W Tj, TSTG -55 to +150 °C Thermal Resistance, Junction to Ambient Operating and Storage Temperature Range Ordering Information Notes: (Note 3) Device Packaging Shipping MMDT3904V-7 SOT-563 3000/Tape & Reel 1. Package is non-polarized. Parts may be on reel in orientation illustrated, 180° rotated, or mixed (both ways). 2. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. 3. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. 4. No purposefully added lead. DS30449 Rev. 4 - 2 1 of 4 www.diodes.com MMDT3904V ã Diodes Incorporated Electrical Characteristics @ TA = 25°C unless otherwise specified Characteristic Symbol Min Max Unit Test Condition Collector-Base Breakdown Voltage V(BR)CBO 60 ¾ V IC = 10mA, IE = 0 Collector-Emitter Breakdown Voltage V(BR)CEO 40 ¾ V IC = 1.0mA, IB = 0 Emitter-Base Breakdown Voltage V(BR)EBO 5.0 ¾ V IE = 10mA, IC = 0 ICEX ¾ 50 nA VCE = 30V, VEB(OFF) = 3.0V IBL ¾ 50 nA VCE = 30V, VEB(OFF) = 3.0V hFE 40 70 100 60 30 ¾ ¾ 300 ¾ ¾ ¾ Collector-Emitter Saturation Voltage VCE(SAT) ¾ 0.20 0.30 V IC = 10mA, IB = 1.0mA IC = 50mA, IB = 5.0mA Base-Emitter Saturation Voltage VBE(SAT) 0.65 ¾ 0.85 0.95 V IC = 10mA, IB = 1.0mA IC = 50mA, IB = 5.0mA Output Capacitance Cobo ¾ 4.0 pF VCB = 5.0V, f = 1.0MHz, IE = 0 Input Capacitance Cibo ¾ 8.0 pF VEB = 0.5V, f = 1.0MHz, IC = 0 Input Impedance hie 1.0 10 kW Voltage Feedback Ratio hre 0.5 8.0 x 10-4 Small Signal Current Gain hfe 100 400 ¾ Output Admittance hoe 1.0 40 mS Current Gain-Bandwidth Product fT 300 ¾ MHz VCE = 20V, IC = 10mA, f = 100MHz Noise Figure NF ¾ 5.0 dB VCE = 5.0V, IC = 100mA, RS = 1.0kW, f = 1.0kHz Delay Time td ¾ 35 ns Rise Time tr ¾ 35 ns Storage Time ts ¾ 200 ns Fall Time tf ¾ 50 ns OFF CHARACTERISTICS (Note 5) Collector Cutoff Current Base Cutoff Current ON CHARACTERISTICS (Note 5) DC Current Gain IC = 100µA, VCE = IC = 1.0mA, VCE = IC = 10mA, VCE = IC = 50mA, VCE = IC = 100mA, VCE = 1.0V 1.0V 1.0V 1.0V 1.0V SMALL SIGNAL CHARACTERISTICS VCE = 10V, IC = 1.0mA, f = 1.0kHz SWITCHING CHARACTERISTICS Notes: VCC = 3.0V, IC = 10mA, VBE(off) = - 0.5V, IB1 = 1.0mA VCC = 3.0V, IC = 10mA, IB1 = IB2 = 1.0mA 5. Short duration test pulse used to minimize self-heating. Marking Information KAP = Product Type Marking Code YM = Date Code Marking Y = Year ex: R = 2004 M = Month ex: 9 = September KAP YM Date Code Key Year 2004 2005 2006 2007 2008 2009 2010 2011 2012 Code R S T U V W X Y Z Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec Code 1 2 3 4 5 6 7 8 9 O N D DS30449 Rev. 4 - 2 2 of 4 www.diodes.com MMDT3904V 250 15 CIBO, INPUT CAPACITANCE (pF) COBO, OUTPUT CAPACITANCE (pF) Pd, POWER DISSIPATION (mW) f = 1MHz 200 150 100 50 10 5 Cibo Cobo 0 0.1 0 -50 0 50 100 150 10 100 VCB, COLLECTOR-BASE VOLTAGE (V) Fig. 2, Input and Output Capacitance vs. Collector-Base Voltage TA, AMBIENT TEMPERATURE (°C) Fig. 1, Derating Curve - Total 1000 1 VCE(SAT), COLLECTOR-EMITTER (V) SATURATION VOLTAGE hFE, DC CURRENT GAIN 1 TA = 125°C 100 TA = +25°C TA = -25°C 10 IC IB = 10 0.1 VCE = 1.0V 0.01 1 1 0.1 10 100 1000 0.1 1 10 1000 100 IC, COLLECTOR CURRENT (mA) Fig. 4, Typical Collector-Emitter Saturation Voltage vs. Collector Current IC, COLLECTOR CURRENT (mA) Fig. 3, Typical DC Current Gain vs Collector Current 10 VBE(SAT), BASE-EMITTER (V) SATURATION VOLTAGE IC IB = 10 1 0.1 0.1 1 10 100 1000 IC, COLLECTOR CURRENT (mA) Fig. 5, Typical Base-Emitter Saturation Voltage vs. Collector Current DS30449 Rev. 4 - 2 3 of 4 www.diodes.com MMDT3904V IMPORTANT NOTICE Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages. LIFE SUPPORT Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the President of Diodes Incorporated. DS30449 Rev. 4 - 2 4 of 4 www.diodes.com MMDT3904V