SOT223 NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTOR FZT603 PACKAGE OUTLINE DETAILS Dim A Millimeters Inches Min Max Min Max 6.3 6.7 0.248 0.264 B 3.3 3.7 0.130 0.146 C 1.7 0.067 D 0.6 0.8 0.024 0.031 E 2.9 3.1 0.114 0.122 F 0.24 0.32 0.009 0.013 G H NOM 4.6 0.85 1.05 NOM 0.181 0.033 FZT603 ISSUE 3 NOVEMBER 1995 FEATURES * 2A continuous current * Useful hFE up to 6A * Fast Switching C E PARTMARKING DETAIL DEVICE TYPE IN FULL C B ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO 100 V 0.041 Collector-Emitter Voltage VCEO 80 V VEBO 10 V A K 0.02 0.10 0.0008 0.004 Emitter-Base Voltage L 6.7 7.3 0.264 0.287 Peak Pulse Current ICM 6 Continuous Collector Current IC 2 A Power Dissipation Ptot 2 W Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C M NOM 2.3 NOM 0.0905 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER SYMBOL MIN. TYP. Collector-Base Breakdown Voltage V(BR)CBO 100 Collector-Emitter Breakdown Voltage V(BR)CEO Emitter-Base Breakdown Voltage V(BR)EBO Collector Cut-Off Current ICBO Emitter Cut-Off Current UNIT CONDITIONS. 240 V IC=100µA 80 110 V IC=10mA* 10 16 V IE=100µA 0.01 10 µA µA VCB=80V VCB=80V, Tamb=100°C IEBO 0.1 µA VEB=8V Collector Cut-Off Current ICES 10 µA VCES=80V Collector-Emitter Saturation Voltage VCE(sat) 0.88 0.90 1.00 1.13 V V V V V IC=0.25A, IB=0.25mA* IC=0.4A, IB=0.4mA* IC=1A, IB=1mA* IC=2A, IB=20mA* IC=2A, IB=20mA Tj=150°C 0.79 0.80 0.88 0.99 0.86 MAX. FZT603 FZT603 TYPICAL CHARACTERISTICS VBE(sat) TYP. MAX. UNIT CONDITIONS. 1.7 1.95 V IC=2A, IB=20mA* -55°C +25°C +100°C +175°C 1.8 hFE 3k 5k 3k 2k 14k 15k 14k 10k 2k 750 V IC=2A, VCE=5V* IC=50mA, VCE=5V* IC=500mA, VCE=5V* IC=1A, VCE=5V* IC=2A, VCE=5V* IC=5A, VCE=5V* IC=6A, VCE=5V* 100k MHz IC=100mA, VCE=10V f=20MHz 90 pF VEB=500mV, f=1MHz Cobo 15 pF VCB=10V, f=1MHz ton 0.5 µs IC=0.5A, VCE=10V IB1=IB2=0.5mA Transition Frequency fT Output Capacitance Cibo Output Capacitance Switching Times 150 1.75 1.2 IC /IB =100 1.0 0.8 0.6 V 1.5 - (Volts) 1.4 Base-Emitter Turn-On Voltage VBE(on) Static Forward Current Transfer Ratio 1.6 0.4 0.2 0 0.01 µs *Measured under pulsed conditions. Pulse width=300ms. Duty cycle ≤2% Spice parameter data is available upon request for this device - (Volts) 1 10 VCE =5V 2.0 1.5 1.0 0.5 0.001 0.01 0.1 1 IC - Collector Current (Amps) VCE(sat) v IC hFE v IC -55°C +25°C +100°C +175°C 2.0 1.8 10 -55°C +25°C +100°C 1.8 1.6 1.6 1.4 1.2 V 1.6 0.1 -55°C +25°C +100°C 2.5 IC - Collector Current (Amps) 2.2 toff - Gain normalised to 1 Amp Base-Emitter Saturation Voltage MIN. - (Volts) SYMBOL 1.4 V PARAMETER h ELECTRICAL CHARACTERISTICS (Continued) 0.8 IC/IB =100 1.0 0.8 1.2 VCE =5V 1.0 0.6 0.6 0.4 0.4 0.01 0.1 1 10 IC - Collector Current (Amps) Tamb = 25 °C DC 1s 100ms 10ms 1ms 100µS 0.1 0.01 0.1 1 V CE 0.1 VBE(on) v IC Single Pulse Test 1 0.01 10 - Collector Voltage (Volts) Safe Operating Area 1 IC - Collector Current (Amps) VBE(sat) v IC 10 0.2 100 10 FZT603 FZT603 TYPICAL CHARACTERISTICS VBE(sat) TYP. MAX. UNIT CONDITIONS. 1.7 1.95 V IC=2A, IB=20mA* -55°C +25°C +100°C +175°C 1.8 hFE 3k 5k 3k 2k 14k 15k 14k 10k 2k 750 V IC=2A, VCE=5V* IC=50mA, VCE=5V* IC=500mA, VCE=5V* IC=1A, VCE=5V* IC=2A, VCE=5V* IC=5A, VCE=5V* IC=6A, VCE=5V* 100k MHz IC=100mA, VCE=10V f=20MHz 90 pF VEB=500mV, f=1MHz Cobo 15 pF VCB=10V, f=1MHz ton 0.5 µs IC=0.5A, VCE=10V IB1=IB2=0.5mA Transition Frequency fT Output Capacitance Cibo Output Capacitance Switching Times 150 1.75 1.2 IC /IB =100 1.0 0.8 0.6 V 1.5 - (Volts) 1.4 Base-Emitter Turn-On Voltage VBE(on) Static Forward Current Transfer Ratio 1.6 0.4 0.2 0 0.01 µs *Measured under pulsed conditions. Pulse width=300ms. Duty cycle ≤2% Spice parameter data is available upon request for this device - (Volts) 1 10 VCE =5V 2.0 1.5 1.0 0.5 0.001 0.01 0.1 1 IC - Collector Current (Amps) VCE(sat) v IC hFE v IC -55°C +25°C +100°C +175°C 2.0 1.8 10 -55°C +25°C +100°C 1.8 1.6 1.6 1.4 1.2 V 1.6 0.1 -55°C +25°C +100°C 2.5 IC - Collector Current (Amps) 2.2 toff - Gain normalised to 1 Amp Base-Emitter Saturation Voltage MIN. - (Volts) SYMBOL 1.4 V PARAMETER h ELECTRICAL CHARACTERISTICS (Continued) 0.8 IC/IB =100 1.0 0.8 1.2 VCE =5V 1.0 0.6 0.6 0.4 0.4 0.01 0.1 1 10 IC - Collector Current (Amps) Tamb = 25 °C DC 1s 100ms 10ms 1ms 100µS 0.1 0.01 0.1 1 V CE 0.1 VBE(on) v IC Single Pulse Test 1 0.01 10 - Collector Voltage (Volts) Safe Operating Area 1 IC - Collector Current (Amps) VBE(sat) v IC 10 0.2 100 10