Order this document by MF122/D SEMICONDUCTOR TECHNICAL DATA For Isolated Package Applications Designed for general–purpose amplifiers and switching applications, where the mounting surface of the device is required to be electrically isolated from the heatsink or chassis. • • • • • • • COMPLEMENTARY SILICON POWER DARLINGTONS 5 AMPERES 100 VOLTS 30 WATTS Electrically Similar to the Popular TIP122 and TIP127 100 VCEO(sus) 5 A Rated Collector Current No Isolating Washers Required Reduced System Cost High DC Current Gain — 2000 (Min) @ IC = 3 Adc UL Recognized, File #E69369, to 3500 VRMS Isolation ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ CASE 221D–02 TO–220 TYPE MAXIMUM RATINGS Rating Collector–Emitter Voltage Symbol Value Unit VCEO 100 Vdc Collector–Base Voltage VCB 100 Vdc Emitter–Base Voltage VEB 5 Vdc VISOL 4500 3500 1500 VRMS Collector Current — Continuous Peak IC 5 8 Adc Base Current IB 0.12 Adc Total Power Dissipation* @ TC = 25_C Derate above 25_C PD 30 0.24 Watts W/_C Total Power Dissipation @ TA = 25_C Derate above 25_C PD 2 0.016 Watts W/_C TJ, Tstg – 65 to + 150 IC Symbol Max Unit Thermal Resistance, Junction to Ambient RθJA 62.5 _C/W Thermal Resistance, Junction to Case* RθJC 4.1 _C/W TL 260 _C RMS Isolation Voltage (1) (for 1 sec, R.H. < 30%, TA = 25_C) Test No. 1 Per Fig. 14 Test No. 2 Per Fig. 15 Test No. 3 Per Fig. 16 Operating and Storage Junction Temperature Range THERMAL CHARACTERISTICS Characteristic Lead Temperature for Soldering Purpose * Measurement made with thermocouple contacting the bottom insulated mounting surface (in a location beneath the die), the device mounted on a heatsink with thermal grease and a mounting torque of ≥ 6 in. lbs. (1) Proper strike and creepage distance must be provided. Motorola, Inc. 1995 Motorola Bipolar Power Transistor Device Data 1 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ v v ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) Characteristic Symbol Min Max Unit VCEO(sus) 100 — Vdc Collector Cutoff Current (VCE = 50 Vdc, IB = 0) ICEO — 10 µAdc Collector Cutoff Current (VCB = 100 Vdc, IE = 0) ICBO — 10 µAdc Emitter Cutoff Current (VBE = 5 Vdc, IC = 0) IEBO — 2 mAdc hFE 1000 2000 — — — Collector–Emitter Saturation Voltage (IC = 3 Adc, IB = 12 mAdc) Collector–Emitter Saturation Voltage (IC = 5 Adc, IB = 20 mAdc) VCE(sat) — — 2 3.5 Vdc Base–Emitter On Voltage (IC = 3 Adc, VCE = 3 Vdc) VBE(on) — 2.5 Vdc hfe 4 — — Cob — — 300 200 pF OFF CHARACTERISTICS Collector–Emitter Sustaining Voltage (1) (IC = 100 mAdc, IB = 0) ON CHARACTERISTICS (1) DC Current Gain (IC = 0.5 Adc, VCE = 3 Vdc) DC Current Gain (IC = 3 Adc, VCE = 3 Vdc) DYNAMIC CHARACTERISTICS Small–Signal Current Gain (IC = 3 Adc, VCE = 4 Vdc, f = 1 MHz) Output Capacitance (VCB = 10 Vdc, IE = 0, f = 0.1 MHz) (1) Pulse Test: Pulse Width MJF127 MJF122 300 µs, Duty Cycle 2%. 5 RB & RC VARIED TO OBTAIN DESIRED CURRENT LEVELS D1, MUST BE FAST RECOVERY TYPES, e.g., 1N5825 USED ABOVE IB ≈ 100 mA MSD6100 USED BELOW IB ≈ 100 mA 51 0 25 µs tr, tf ≤ 10 ns DUTY CYCLE = 1% D1 ≈8k ≈ 120 FOR td AND tr, D1 IS DISCONNECTED AND V2 = 0 FOR NPN TEST CIRCUIT REVERSE ALL POLARITIES. tf 1 0.7 0.5 0.3 0.2 +4 V Figure 1. Switching Times Test Circuit 2 SCOPE RB V1 APPROX. –12 V 2 t, TIME ( µs) V2 APPROX. +8 V RC TUT ts 3 VCC – 30 V 0.1 0.07 0.05 0.1 tr VCC = 30 V IC/IB = 250 IB1 = IB2 TJ = 25°C 0.2 td @ VBE(off) = 0 V PNP NPN 3 0.5 0.7 1 2 0.3 IC, COLLECTOR CURRENT (AMP) 5 7 Figure 2. Typical Switching Times Motorola Bipolar Power Transistor Device Data 10 PD, POWER DISSIPATION (WATTS) TA TC 4 80 3 60 TC 2 40 TA 1 20 0 0 20 40 60 80 100 120 140 160 T, TEMPERATURE (°C) Figure 3. Maximum Power Derating 1 r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) 0.5 0.3 0.2 0.1 SINGLE PULSE RθJC(t) = r(t) RθJC TJ(pk) – TC = P(pk) RθJC(t) 0.05 0.03 0.02 0.01 0.1 0.2 0.3 0.5 1 2 3 5 20 30 50 t, TIME (ms) 10 100 200 300 500 1K 2K 3K 5K 10K Figure 4. Thermal Response IC, COLLECTOR CURRENT (AMPS) 10 100 µs 5 3 1 ms TJ = 150°C 2 dc 5 ms 1 CURRENT LIMIT SECONDARY BREAKDOWN LIMIT THERMAL LIMIT @ TC = 25°C (SINGLE PULSE) 0.5 0.3 0.2 0.1 1 10 5 20 30 2 3 50 VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS) There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC – VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 5 is based on T J(pk) = 150_C; TC is variable depending on conditions. Secondary breakdown pulse limits are valid for duty cycles to 10% provided T J(pk) < 150_C. TJ(pk) may be calculated from the data in Figure 4. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by secondary breakdown. 100 Figure 5. Maximum Forward Bias Safe Operating Area Motorola Bipolar Power Transistor Device Data 3 300 5000 3000 2000 200 TJ = 25°C C, CAPACITANCE (pF) hfe , SMALL–SIGNAL CURRENT GAIN 10,000 1000 500 300 200 TC = 25°C VCE = 4 Vdc IC = 3 Adc 100 50 30 20 10 Cob 100 Cib 70 50 PNP NPN PNP NPN 1 2 5 10 20 50 100 f, FREQUENCY (kHz) 200 30 0.1 500 1000 0.2 2 10 20 0.5 1 5 VR, REVERSE VOLTAGE (VOLTS) Figure 6. Typical Small–Signal Current Gain Figure 7. Typical Capacitance NPN MJF122 PNP MJF127 20,000 VCE = 4 V 10,000 5000 hFE , DC CURRENT GAIN 10,000 hFE , DC CURRENT GAIN 100 20,000 VCE = 4 V TJ = 150°C 3000 2000 25°C 1000 – 55°C 500 300 200 50 0.1 0.2 0.5 0.7 0.3 1 3 2 5 7 7000 5000 3000 2000 1000 700 500 300 200 0.1 10 TJ = 150°C 25°C – 55°C 0.2 0.3 0.5 0.7 1 2 3 5 7 10 IC, COLLECTOR CURRENT (AMP) IC, COLLECTOR CURRENT (AMP) VCE , COLLECTOR–EMITTER VOLTAGE (VOLTS) VCE , COLLECTOR–EMITTER VOLTAGE (VOLTS) Figure 8. Typical DC Current Gain 3 TJ = 25°C 2.6 IC = 2 A 4A 6A 2.2 1.8 1.4 1 0.3 0.5 0.7 1 2 3 5 7 10 20 30 3 TJ = 25°C 2.6 IC = 2 A 6A 4A 2.2 1.8 1.4 1 0.3 0.5 0.7 1 2 3 5 7 10 20 IB, BASE CURRENT (mA) IB, BASE CURRENT (mA) Figure 9. Typical Collector Saturation Region 4 Motorola Bipolar Power Transistor Device Data 30 NPN MJF122 PNP MJF127 3 3 TJ = 25°C TJ = 25°C 2.5 V, VOLTAGE (VOLTS) V, VOLTAGE (VOLTS) 2.5 2 1.5 VBE(sat) @ IC/IB = 250 VBE @ VCE = 4 V 1 0.5 0.1 2 1.5 VBE @ VCE = 4 V VBE(sat) @ IC/IB = 250 1 VCE(sat) @ IC/IB = 250 VCE(sat) @ IC/IB = 250 0.5 0.2 0.3 0.5 0.7 2 1 3 5 7 0.1 10 0.2 0.3 IC, COLLECTOR CURRENT (AMP) 0.5 0.7 1 2 3 5 7 10 7 10 IC, COLLECTOR CURRENT (AMP) Figure 10. Typical “On” Voltages +5 +4 θV, TEMPERATURE COEFFICIENTS (mV/°C) θV, TEMPERATURE COEFFICIENT (mV°C) +5 *IC/IB ≤ hFE 3 +3 25°C to 150°C +2 – 55°C to 25°C +1 0 –1 *θVC FOR VCE(sat) –2 25°C to 150°C –3 –4 –5 0.1 θVB FOR VBE 0.2 0.3 0.5 – 55°C to 25°C 0.7 1 2 3 5 7 10 +4 *IC/IB ≤ hFE 3 +3 25°C to 150°C +2 +1 0 –1 *θVC FOR VCE(sat) –2 –3 –4 –5 0.1 IC, COLLECTOR CURRENT (AMP) – 55°C to 25°C θVB FOR VBE – 55°C to 25°C 25°C to 150°C 0.2 0.3 0.5 1 2 3 IC, COLLECTOR CURRENT (AMP) 5 Figure 11. Typical Temperature Coefficients 105 105 FORWARD REVERSE IC, COLLECTOR CURRENT ( µ A) IC, COLLECTOR CURRENT ( µ A) REVERSE 104 VCE = 30 V 103 102 TJ = 150°C 101 100 100°C 25°C 10–1 – 0.6 – 0.4 – 0.2 0 + 0.2 + 0.4 + 0.6 + 0.8 +1 VBE, BASE–EMITTER VOLTAGE (VOLTS) + 1.2 + 1.4 FORWARD 104 VCE = 30 V 103 102 101 TJ = 150°C 100°C 100 25°C 10–1 + 0.6 + 0.4 + 0.2 0 – 0.2 – 0.4 – 0.6 – 0.8 –1 – 1.2 – 1.4 VBE, BASE–EMITTER VOLTAGE (VOLTS) Figure 12. Typical Collector Cut–Off Region Motorola Bipolar Power Transistor Device Data 5 NPN MJF122 PNP MJF127 COLLECTOR COLLECTOR BASE BASE ≈8k ≈ 120 ≈8k EMITTER ≈ 120 EMITTER Figure 13. Darlington Schematic TEST CONDITIONS FOR ISOLATION TESTS* CLIP MOUNTED FULLY ISOLATED PACKAGE CLIP LEADS HEATSINK MOUNTED FULLY ISOLATED PACKAGE MOUNTED FULLY ISOLATED PACKAGE 0.107” MIN LEADS 0.107” MIN LEADS HEATSINK HEATSINK 0.110” MIN Figure 14. Clip Mounting Position for Isolation Test Number 1 Figure 15. Clip Mounting Position for Isolation Test Number 2 Figure 16. Screw Mounting Position for Isolation Test Number 3 * Measurement made between leads and heatsink with all leads shorted together MOUNTING INFORMATION 4–40 SCREW CLIP PLAIN WASHER HEATSINK COMPRESSION WASHER HEATSINK NUT Figure 17. Typical Mounting Techniques* Laboratory tests on a limited number of samples indicate, when using the screw and compression washer mounting technique, a screw torque of 6 to 8 in . lbs is sufficient to provide maximum power dissipation capability. The compression washer helps to maintain a constant pressure on the package over time and during large temperature excursions. Destructive laboratory tests show that using a hex head 4–40 screw, without washers, and applying a torque in excess of 20 in . lbs will cause the plastic to crack around the mounting hole, resulting in a loss of isolation capability. Additional tests on slotted 4–40 screws indicate that the screw slot fails between 15 to 20 in . lbs without adversely affecting the package. However, in order to positively ensure the package integrity of the fully isolated device, Motorola does not recommend exceeding 10 in . lbs of mounting torque under any mounting conditions. ** For more information about mounting power semiconductors see Application Note AN1040. 6 Motorola Bipolar Power Transistor Device Data PACKAGE DIMENSIONS –T– –B– F SEATING PLANE C S Q NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. U A 1 2 3 H –Y– K G N L D J R 3 PL 0.25 (0.010) M B M Y DIM A B C D F G H J K L N Q R S U INCHES MIN MAX 0.621 0.629 0.394 0.402 0.181 0.189 0.026 0.034 0.121 0.129 0.100 BSC 0.123 0.129 0.018 0.025 0.500 0.562 0.045 0.060 0.200 BSC 0.126 0.134 0.107 0.111 0.096 0.104 0.259 0.267 MILLIMETERS MIN MAX 15.78 15.97 10.01 10.21 4.60 4.80 0.67 0.86 3.08 3.27 2.54 BSC 3.13 3.27 0.46 0.64 12.70 14.27 1.14 1.52 5.08 BSC 3.21 3.40 2.72 2.81 2.44 2.64 6.58 6.78 STYLE 2: PIN 1. BASE 2. COLLECTOR 3. EMITTER CASE 221D–02 TO–220 TYPE ISSUE D Motorola Bipolar Power Transistor Device Data 7 Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters can and do vary in different applications. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. How to reach us: USA / EUROPE: Motorola Literature Distribution; P.O. Box 20912; Phoenix, Arizona 85036. 1–800–441–2447 JAPAN: Nippon Motorola Ltd.; Tatsumi–SPD–JLDC, Toshikatsu Otsuki, 6F Seibu–Butsuryu–Center, 3–14–2 Tatsumi Koto–Ku, Tokyo 135, Japan. 03–3521–8315 MFAX: [email protected] – TOUCHTONE (602) 244–6609 INTERNET: http://Design–NET.com HONG KONG: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852–26629298 8 ◊ Motorola Bipolar Power Transistor Device Data *MJF122/D* MJF122/D