NSI45035JZT1G Adjustable Constant Current Regulator & LED Driver 45 V, 35 − 70 mA + 15%, 1.5 W Package The adjustable constant current regulator (CCR) is a simple, economical and robust device designed to provide a cost effective solution for regulating current in LEDs. The CCR is based on patent-pending Self-Biased Transistor (SBT) technology and regulates current over a wide voltage range. It is designed with a negative temperature coefficient to protect LEDs from thermal runaway at extreme voltages and currents. The CCR turns on immediately and is at 20% of regulation with only 0.5 V Vak. The Radj pin allows Ireg(SS) to be adjusted to higher currents by attaching a resistor between Radj (Pin 3) and the Cathode (Pin 4). The Radj pin can also be left open (No Connect) if no adjustment is required. It requires no external components allowing it to be designed as a high or low−side regulator. The high anodecathode voltage rating withstands surges common in Automotive, Industrial and Commercial Signage applications. This device is available in a thermally robust package and is qualified to stringent AEC−Q101 standard, which is lead-free RoHS compliant and uses halogen-free molding compound. http://onsemi.com Ireg(SS) = 35 − 70 mA @ Vak = 7.5 V Anode 1 3 Radj 2/4 Cathode Features • • • • • • • • • • SOT−223 CASE 318E STYLE 2 Robust Power Package: 1.5 Watts Adjustable up to 70 mA Wide Operating Voltage Range Immediate Turn-On Voltage Surge Suppressing − Protecting LEDs AEC-Q101 Qualified SBT (Self−Biased Transistor) Technology Negative Temperature Coefficient Eliminates Additional Regulation These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Applications • Automobile: Chevron Side Mirror Markers, Cluster, Display & Instrument Backlighting, CHMSL, Map Light • AC Lighting Panels, Display Signage, Decorative Lighting, Channel Lettering • Switch Contact Wetting • Application Note AND8391/D − Power Dissipation Considerations • Application Note AND8349/D − Automotive CHMSL MARKING DIAGRAM C AYW AAKG G 1 A C Radj A = Assembly Location Y = Year W = Work Week AAK = Specific Device Code G = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION Device NSI45035JZT1G Package Shipping† SOT−223 (Pb−Free) 1000/Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2010 June, 2010 − Rev. 0 1 Publication Order Number: NSI45035JZ/D NSI45035JZT1G MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Rating Anode−Cathode Voltage Reverse Voltage Operating and Storage Junction Temperature Range ESD Rating: Human Body Model Machine Model Symbol Value Vak Max 45 V VR 500 mV TJ, Tstg −55 to +150 ESD Unit °C Class 2 Class C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Steady State Current @ Vak = 7.5 V (Note 1) Voltage Overhead (Note 2) Symbol Min Typ Max Unit Ireg(SS) 29.75 35 40.25 mA 42.5 mA Voverhead 1.8 Ireg(P) Capacitance @ Vak = 7.5 V (Note 4) C 7.4 pF Capacitance @ Vak = 0 V (Note 4) C 31 pF 1. 2. 3. 4. 30.9 V Pulse Current @ Vak = 7.5 V (Note 3) Ireg(SS) steady state is the voltage (Vak) applied for a time duration ≥ 35 sec, using FR−4 @ 300 mm2 2 oz. Copper traces, in still air. Voverhead = Vin − VLEDs. Voverhead is typical value for 75% Ireg(SS). Ireg(P) non−repetitive pulse test. Pulse width t ≤ 1.0 msec. f = 1 MHz, 0.02 V RMS. THERMAL CHARACTERISTICS Characteristic Total Device Dissipation (Note 5) TA = 25°C Derate above 25°C Symbol Max Unit PD 1008 8.06 mW mW/°C Thermal Resistance, Junction−to−Ambient (Note 5) RθJA 124 °C/W Thermal Reference, Junction−to−Lead 4 (Note 5) RψJL4 PD 33.3 °C/W 1136 9.09 mW mW/°C Total Device Dissipation (Note 6) TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient (Note 6) RθJA 110 °C/W Thermal Reference, Junction−to−Lead 4 (Note 6) RψJL4 PD 33.3 °C/W 1238 9.9 mW mW/°C RθJA 101 °C/W RψJL4 PD 33.7 °C/W 1420 11.36 mW mW/°C RθJA 88 °C/W RψJL4 PD 32.1 °C/W 1316 10.53 mW mW/°C 95 °C/W Total Device Dissipation (Note 7) TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient (Note 7) Thermal Reference, Junction−to−Lead 4 (Note 7) Total Device Dissipation (Note 8) TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient (Note 8) Thermal Reference, Junction−to−Lead 4 (Note 8) Total Device Dissipation (Note 9) TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient (Note 9) RθJA Thermal Reference, Junction−to−Lead 4 (Note 9) RψJL4 PD Total Device Dissipation (Note 10) TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient (Note 10) Thermal Reference, Junction−to−Lead 4 (Note 10) Junction and Storage Temperature Range 32.4 °C/W 1506 12.05 mW mW/°C RθJA 83 °C/W RψJL4 TJ, Tstg 30.8 °C/W −55 to +150 °C NOTE: Lead measurements are made by non−contact methods such as IR with treated surface to increase emissivity to 0.9. Lead temperature measurement by attaching a T/C may yield values as high as 30% higher °C/W values based upon empirical measurements and method of attachment. 5. FR−4 @ 300 mm2, 1 oz. copper traces, still air. 6. FR−4 @ 300 mm2, 2 oz. copper traces, still air. 7. FR−4 @ 500 mm2, 1 oz. copper traces, still air. 8. FR−4 @ 500 mm2, 2 oz. copper traces, still air. 9. FR−4 @ 700 mm2, 1 oz. copper traces, still air. 10. FR−4 @ 700 mm2, 2 oz. copper traces, still air. http://onsemi.com 2 NSI45035JZT1G TYPICAL PERFORMANCE CURVES Minimum FR−4 @ 300 mm2, 2 oz Copper Trace, Still Air Ireg(SS), STEADY STATE CURRENT (mA) Ireg, CURRENT REGULATION (mA) 60 50 40 30 20 10 0 −10 TA = 25°C, Radj = Open −20 −10 0 10 20 30 40 60 50 70 40 TA = −40°C −0.0290 mA/°C 30 −0.0278 mA/°C 25 TA = 25°C 20 TA = 85°C 15 TA = 125°C 10 Radj = Open 5 0 DC Test Steady State, Still Air 0 3 4 5 6 7 8 9 10 Figure 2. Steady State Current (Ireg(SS)) vs. Anode−Cathode Voltage (Vak) Ireg(SS), STEADY STATE CURRENT (mA) TA = 25°C 36 35 34 33 Radj = Open 32 31 3.0 Non−Repetitive Pulse Test 4.0 5.0 6.0 7.0 8.0 9.0 10 41 40 39 38 37 36 35 34 33 32 Vak @ 7.5 V TA = 25°C Radj = Open 31 30 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 Vak, ANODE−CATHODE VOLTAGE (V) Ireg(P), PULSE CURRENT (mA) Figure 3. Pulse Current (Ireg(P)) vs. Anode−Cathode Voltage (Vak) Figure 4. Steady State Current vs. Pulse Current Testing Ireg(SS), STEADY STATE CURRENT (mA) 37 Ireg, CURRENT REGULATION (mA) 2 Figure 1. General Performance Curve for CCR 37 Vak @ 7.5 V TA = 25°C Radj = Open 36 35 0 1 Vak, ANODE−CATHODE VOLTAGE (V) 38 34 −0.0302 mA/°C 35 Vak, ANODE−CATHODE VOLTAGE (V) 39 Ireg(P), PULSE CURRENT (mA) 45 5 10 15 20 25 30 35 70 Vak @ 7.5 V TA = 25°C 65 60 55 50 45 40 35 30 1 TIME (s) 10 100 Radj (W), MAX POWER 50 mW Figure 6. Ireg(SS) vs. Radj Figure 5. Current Regulation vs. Time http://onsemi.com 3 1000 NSI45035JZT1G 2300 500 mm2/2 oz POWER DISSIPATION (mW) 2100 300 mm2/2 oz 1900 1700 100 mm2/2 oz 1500 1300 1100 500 mm2/1 oz 900 300 mm2/1 oz 700 500 −40 100 mm2/1 oz −20 0 20 40 60 80 TA, AMBIENT TEMPERATURE (°C) Figure 7. Power Dissipation vs. Ambient Temperature @ TJ = 1505C APPLICATIONS D1 Anode D1 Q1 Cathode + − Q2 Radj LED Vin HF3−R5570 Qx Radj LED HF3−R5570 Anode Q1 Cathode Radj LED + − HF3−R5570 Vin Q2 Radj Qx Radj LED HF3−R5570 LED HF3−R5570 LED HF3−R5570 LED HF3−R5570 LED HF3−R5570 LED LED HF3−R5570 HF3−R5570 LED LED HF3−R5570 HF3−R5570 Figure 8. Typical Application Circuit (30 mA each LED String) Figure 9. Typical Application Circuit (90 mA each LED String) Number of LED’s that can be connected is determined by: D1 is a reverse battery protection diode LED’s = ((Vin − QX VF − D1 VF)/LED VF) Example: Vin = 12 Vdc, QX VF = 3.5 Vdc, D1VF = 0.7 V LED VF = 2.2 Vdc @ 30 mA (12 Vdc − 4.2 Vdc)/2.2 Vdc = 3 LEDs in series. Number of LED’s that can be connected is determined by: D1 is a reverse battery protection diode Example: Vin = 12 Vdc, QX VF = 3.5 Vdc, D1VF = 0.7 V LED VF = 2.6 Vdc @ 90 mA (12 Vdc − (3.5 + 0.7 Vdc))/2.6 Vdc = 3 LEDs in series. Number of Drivers = LED current/30 mA 90 mA/30 mA = 3 Drivers (Q1, Q2, Q3) http://onsemi.com 4 Radj NSI45035JZT1G Comparison of LED Circuit using CCR vs. Resistor Biasing ON Semiconductor CCR Design Resistor Biased Design Constant brightness over full Supply Voltage (more efficient), see Figure 10 Large variations in brightness over full Automotive Supply Voltage Little variation of power in LEDs, see Figure 11 Large variations of current (power) in LEDs Constant current extends LED strings lifetime, see Figure 10 High Supply Voltage/ Higher Current in LED strings limits lifetime Current decreases as voltage increases, see Figure 10 Current increases as voltage increases Current supplied to LED string decreases as temperature increases (self-limiting), see Figure 2 LED current decreases as temperature increases Single resistor is used for current select Requires costly inventory (need for several resistor values to match LED intensity) Fewer components, less board space required More components, more board space required Surface mount component Through-hole components 50 300 TA = 25°C 45 250 Pd LEDs (mW) I (mA) 40 Circuit Current with CCR Device 35 30 Circuit Current with 214 W 25 20 15 Representative Test Data for Figure 8 Circuit, Current of LEDs, FR−4 @ 300 mm2, 2 oz Copper Area 10 5 0 9 10 11 TA = 25°C 12 13 14 15 LED Power with CCR Device 200 LED Power with 214 W 150 100 Representative Test Data for Figure 8 Circuit, Pd of LEDs, FR−4 @ 300 mm2, 2 oz Copper Area 50 0 16 9 10 11 12 13 14 Vin (V) Vin (V) Figure 10. Series Circuit Current Figure 11. LED Power Current Regulation: Pulse Mode (Ireg(P)) vs DC Steady-State (Ireg(SS)) 15 16 Ireg(SS) for stated board material, size, copper area and copper thickness. Ireg(P) will always be greater than Ireg(SS) due to the die temperature rising during Ireg(SS). This heating effect can be minimized during circuit design with the correct selection of board material, metal trace size and weight, for the operating current, voltage, board operating temperature (TA) and package. (Refer to Thermal Characteristics table). There are two methods to measure current regulation: Pulse mode (Ireg(P)) testing is applicable for factory and incoming inspection of a CCR where test times are a minimum. (t < 300 ms). DC Steady-State (Ireg(SS)) testing is applicable for application verification where the CCR will be operational for seconds, minutes, or even hours. ON Semiconductor has correlated the difference in Ireg(P) to http://onsemi.com 5 NSI45035JZT1G PACKAGE DIMENSIONS SOT−223 (TO−261) CASE 318E−04 ISSUE M D b1 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 4 HE E 1 2 3 b e1 e 0.08 (0003) C q A A1 DIM A A1 b b1 c D E e e1 L1 HE q STYLE 2: PIN 1. 2. 3. 4. L1 MIN 1.50 0.02 0.60 2.90 0.24 6.30 3.30 2.20 0.85 1.50 6.70 0° MILLIMETERS NOM MAX 1.63 1.75 0.06 0.10 0.75 0.89 3.06 3.20 0.29 0.35 6.50 6.70 3.50 3.70 2.30 2.40 0.94 1.05 1.75 2.00 7.00 7.30 10° − MIN 0.060 0.001 0.024 0.115 0.009 0.249 0.130 0.087 0.033 0.060 0.264 0° INCHES NOM 0.064 0.002 0.030 0.121 0.012 0.256 0.138 0.091 0.037 0.069 0.276 − MAX 0.068 0.004 0.035 0.126 0.014 0.263 0.145 0.094 0.041 0.078 0.287 10° ANODE CATHODE NC CATHODE SOLDERING FOOTPRINT 3.8 0.15 2.0 0.079 2.3 0.091 2.3 0.091 6.3 0.248 2.0 0.079 1.5 0.059 SCALE 6:1 mm Ǔ ǒinches ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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