ONSEMI BAS20LT1

BAS19LT1, BAS20LT1,
BAS21LT1, BAS21DW5T1
Preferred Devices
High Voltage
Switching Diode
Device Marking:
• BAS19LT1 = JP
• BAS20LT1 = JR
• BAS21LT1 = JS
• BAS21DW5T1 = JS
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HIGH VOLTAGE
SWITCHING DIODE
SOT−23
Features
• Pb−Free Packages are Available
MAXIMUM RATINGS
Rating
Symbol
Continuous Reverse Voltage
Value
Unit
VR
120
200
250
BAS19
BAS20
BAS21
Repetitive Peak Reverse Voltage
Vdc
Vdc
120
200
250
Continuous Forward Current
IF
200
mAdc
Peak Forward Surge Current
IFM(surge)
625
mAdc
TJmax
150
°C
PD
385
mW
Maximum Junction Temperature
Power Dissipation (Note 4)
4
CATHODE
3
ANODE
MARKING DIAGRAMS
VRRM
BAS19
BAS20
BAS21
3
1
CATHODE
ANODE
SC−88A
5
1
CATHODE
ANODE
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. Mounted on FR−5 Board = 1.0 x 0.75 x 0.062 in.
Jx M
SOT−23 (TO−236)
CASE 318
STYLE 8
Jx = Specific Device Code
x = P, R or S
M = Date Code
XXd
SC−88A (SOT−353)
CASE 419A
XX = Specific Device Code
d = Date Code
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 4 of this data sheet.
Preferred devices are recommended choices for future use
and best overall value.
 Semiconductor Components Industries, LLC, 2005
April, 2005 − Rev. 7
1
Publication Order Number:
BAS19LT1/D
BAS19LT1, BAS20LT1, BAS21LT1, BAS21DW5T1
THERMAL CHARACTERISTICS (SOT−23)
Characteristic
Total Device Dissipation FR−5 Board
(Note 2)
TA = 25°C
Derate above 25°C
Thermal Resistance
Junction−to−Ambient (SOT−23)
Symbol
Max
Unit
PD
225
mW
1.8
mW/°C
556
°C/W
300
mW
2.4
mW/°C
417
°C/W
−55 to +150
°C
Symbol
Max
Unit
PD
385
mW
328
3.0
°C/W
mW/°C
TJmax
150
°C
TJ, Tstg
−55 to +150
°C
RJA
Total Device Dissipation Alumina Substrate
(Note 3)
TA = 25°C
Derate above 25°C
PD
Thermal Resistance Junction−to−Ambient
RJA
Junction and Storage
Temperature Range
TJ, Tstg
THERMAL CHARACTERISTICS (SC−88A)
Characteristic
Power Dissipation (Note 4)
Thermal Resistance −
Junction−to−Ambient
Derate Above 25°C
RJA
Maximum Junction Temperature
Operating Junction and Storage Temperature Range
2. FR−5 = 1.0 0.75 0.062 in.
3. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.
4. Mounted on FR−5 Board = 1.0 x 0.75 x 0.062 in.
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Symbol
Characteristic
Reverse Voltage Leakage Current
(VR = 100 Vdc)
(VR = 150 Vdc)
(VR = 200 Vdc)
(VR = 100 Vdc, TJ = 150°C)
(VR = 150 Vdc, TJ = 150°C)
(VR = 200 Vdc, TJ = 150°C)
BAS19
BAS20
BAS21
BAS19
BAS20
BAS21
Reverse Breakdown Voltage
(IBR = 100 Adc)
(IBR = 100 Adc)
(IBR = 100 Adc)
BAS19
BAS20
BAS21
Min
Max
−
−
−
−
−
−
0.1
0.1
0.1
100
100
100
120
200
250
−
−
−
−
−
1.0
1.25
Unit
Adc
IR
V(BR)
Vdc
Forward Voltage
(IF = 100 mAdc)
(IF = 200 mAdc)
VF
Diode Capacitance (VR = 0, f = 1.0 MHz)
CD
−
5.0
pF
Reverse Recovery Time (IF = IR = 30 mAdc, IR(REC) = 3.0 mAdc, RL = 100)
trr
−
50
ns
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2
Vdc
BAS19LT1, BAS20LT1, BAS21LT1, BAS21DW5T1
820 +10 V
2.0 k
100 H
IF
tp
tr
0.1 F
IF
t
trr
10%
t
0.1 F
90%
D.U.T.
50 INPUT
SAMPLING
OSCILLOSCOPE
50 OUTPUT
PULSE
GENERATOR
VR
IR(REC) = 3.0 mA
IR
OUTPUT PULSE
(IF = IR = 30 mA; MEASURED
at IR(REC) = 3.0 mA)
INPUT SIGNAL
Notes: 1. A 2.0 k variable resistor adjusted for a Forward Current (IF) of 30 mA.
Notes: 2. Input pulse is adjusted so IR(peak) is equal to 30 mA.
Notes: 3. tp » trr
Figure 1. Recovery Time Equivalent Test Circuit
1200
25°C
REVERSE CURRENT (nA)
FORWARD VOLTAGE (mV)
TA = −55°C
1000
800
155°C
600
400
200
7000
6000
5000
4000
3000
TA = 155°C
6
5
4
3
2
TA = 25°C
TA = −55°C
1
0
1
1
10
100
1000
1
2
5
10
20
50
FORWARD CURRENT (mA)
REVERSE VOLTAGE (V)
Figure 2. Forward Voltage
Figure 3. Reverse Leakage
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3
100 200 300
BAS19LT1, BAS20LT1, BAS21LT1, BAS21DW5T1
ORDERING INFORMATION
Device
Package
BAS19LT1
Shipping†
SOT−23
BAS19LT1G
SOT−23
(Pb−Free)
BAS19LT3
3000 T
Tape/Reel
/R l
SOT−23
BAS19LT3G
SOT−23
(Pb−Free)
BAS20LT1
10000 T
Tape/Reel
/R l
SOT−23
BAS20LT1G
SOT−23
(Pb−Free)
BAS21LT1
3000 T
Tape/Reel
/R l
SOT−23
BAS21LT1G
SOT−23
(Pb−Free)
BAS21LT3
3000 T
Tape/Reel
/R l
SOT−23
BAS21LT3G
SOT−23
(Pb−Free)
BAS21DW5T1
10000 T
Tape/Reel
/R l
SC−88A
BAS21DW5T1G
SC−88A
(Pb−Free)
3000 T
Tape/Reel
/R l
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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4
BAS19LT1, BAS20LT1, BAS21LT1, BAS21DW5T1
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−09
ISSUE AH
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIUMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD THICKNESS
IS THE MINIMUM THICKNESS OF BASE
MATERIAL.
4. 318−01, −02, AND −06 OBSOLETE, NEW
STANDARD 318−09.
A
L
3
1
V
B
2
S
DIM
A
B
C
D
G
H
J
K
L
S
V
G
C
D
H
J
K
INCHES
MIN
MAX
0.1102 0.1197
0.0472 0.0551
0.0385 0.0498
0.0140 0.0200
0.0670 0.0826
0.0040 0.0098
0.0034 0.0070
0.0180 0.0236
0.0350 0.0401
0.0830 0.0984
0.0177 0.0236
MILLIMETERS
MIN
MAX
2.80
3.04
1.20
1.40
0.99
1.26
0.36
0.50
1.70
2.10
0.10
0.25
0.085
0.177
0.45
0.60
0.89
1.02
2.10
2.50
0.45
0.60
STYLE 8:
PIN 1. ANODE
2. NO CONNECTION
3. CATHODE
SOLDERING FOOTPRINT*
0.95
0.037
0.95
0.037
2.0
0.079
0.9
0.035
0.8
0.031
SCALE 10:1
mm inches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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5
BAS19LT1, BAS20LT1, BAS21LT1, BAS21DW5T1
PACKAGE DIMENSIONS
SC−88A (SOT−353)
CASE 419A−02
ISSUE G
A
NOTES:
1. DIMENSIONING AND TOLERANCING
PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. 419A−01 OBSOLETE. NEW STANDARD
419A−02.
4. DIMENSIONS A AND B DO NOT INCLUDE
MOLD FLASH, PROTRUSIONS, OR GATE
BURRS.
G
5
4
−B−
S
1
2
3
D 5 PL
0.2 (0.008)
M
B
DIM
A
B
C
D
G
H
J
K
N
S
M
N
INCHES
MIN
MAX
0.071
0.087
0.045
0.053
0.031
0.043
0.004
0.012
0.026 BSC
−−−
0.004
0.004
0.010
0.004
0.012
0.008 REF
0.079
0.087
MILLIMETERS
MIN
MAX
1.80
2.20
1.15
1.35
0.80
1.10
0.10
0.30
0.65 BSC
−−−
0.10
0.10
0.25
0.10
0.30
0.20 REF
2.00
2.20
J
C
K
H
SOLDERING FOOTPRINT*
0.50
0.0197
0.65
0.025
0.65
0.025
0.40
0.0157
1.9
0.0748
SCALE 20:1
mm inches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
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Order Literature: http://www.onsemi.com/litorder
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Phone: 81−3−5773−3850
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6
For additional information, please contact your
local Sales Representative.
BAS19LT1/D