KEXIN 2SB967

Transistors
SMD Type
Silicon PNP Epitaxial Planar Type
2SB967
TO-252
6.50
+0.2
5.30-0.2
Features
+0.15
1.50 -0.15
+0.15
-0.15
Unit: mm
2.30
+0.1
-0.1
+0.8
0.50-0.7
Possible to solder the radiation fin directly to printed cicuit board.
+0.1
0.60-0.1
2.3
3 .8 0
+0.15
5.55 -0.15
0.127
max
+0.25
2.65 -0.1
+0.1
0.80-0.1
+0.28
1.50 -0.1
+0.2
9.70 -0.2
Large collector current IC.
+0.15
0.50 -0.15
Low collector-emitter saturation voltage VCE(sat).
1 Base
+0.15
4.60-0.15
2 Collector
3 Emitter
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Collector-base voltage
VCBO
-27
V
Collector-emitter voltage
VCEO
-18
V
Emitter-base voltage
VEBO
-7
V
Collector current
IC
-5
A
Peak collector current
ICP
-8
A
Collector power dissipation
PC
20
W
Junction temperature
Tj
150
Storage temperature
Tstg
-55 to +150
Electrical Characteristics Ta = 25
Parameter
Symbol
Collector-base cutoff curent
Testconditons
ICBO
VCB = -10 V,IE = 0
Min
Typ
Max
Unit
-100
nA
-1
ìA
Emitter-base cutoff current
IEBO
VEB = -5 V, IC = 0
Collector-emitter voltage
VCEO
IC = -1mA, IB = 0
-18
V
Emitter-base voltage
VEBO
IE = -10 ìA, IC = 0
-7
V
VCE = -2 V, IC = 2 A
90
Forward current transfer ratio
hFE
Collector-emitter saturation voltage
625
VCE(sat) IC = -3 A, IB = -0.1 A
Transition frequency
fT
Collector output capacitance
Cob
VCE = -6 V, IE = -50 mA , f = 200 MHz
VCB = -20V , IE = 0 , f = 1.0MHz
-1
120
V
MHz
85
pF
hFE Classification
Rank
P
Q
R
hFE
90 135
125 205
180 625
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