FREESCALE MRF6S9060NBR1

Freescale Semiconductor
Technical Data
Document Number: MRF6S9060
Rev. 1, 6/2005
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for broadband commercial and industrial applications with
frequencies up to 1000 MHz. The high gain and broadband performance of
these devices make them ideal for large - signal, common - source amplifier
applications in 28 volt base station equipment.
• Typical Single - Carrier N - CDMA Performance @ 880 MHz, VDD = 28 Volts,
IDQ = 450 mA, Pout = 14 Watts Avg., IS - 95 CDMA (Pilot, Sync, Paging,
Traffic Codes 8 Through 13) Channel Bandwidth = 1.2288 MHz. PAR =
9.8 dB @ 0.01% Probability on CCDF.
Power Gain — 21.4 dB
Drain Efficiency — 32.1%
ACPR @ 750 kHz Offset — - 47.6 dBc @ 30 kHz Bandwidth
GSM EDGE Application
• Typical GSM EDGE Performance: VDD = 28 Volts, IDQ = 500 mA,
Pout = 21 Watts Avg., Full Frequency Band (921 - 960 MHz)
Power Gain — 20 dB
Drain Efficiency — 46%
Spectral Regrowth @ 400 kHz Offset = - 62 dBc
Spectral Regrowth @ 600 kHz Offset = - 78 dBc
EVM — 1.5% rms
GSM Application
• Typical GSM Performance: VDD = 28 Volts, IDQ = 500 mA, Pout = 60 Watts,
Full Frequency Band (921 - 960 MHz)
Power Gain — 20 dB
Drain Efficiency — 63%
• Capable of Handling 10:1 VSWR, @ 28 Vdc, 880 MHz, 60 Watts CW
Output Power
• Characterized with Series Equivalent Large - Signal Impedance Parameters
• Integrated ESD Protection
• N Suffix Indicates Lead - Free Terminations
• 200°C Capable Plastic Package
• TO - 270 - 2 in Tape and Reel. R1 Suffix = 500 Units per 24 mm,
13 inch Reel.
• TO - 272 - 2 in Tape and Reel. R1 Suffix = 500 Units per 44 mm,
13 inch Reel.
MRF6S9060NR1
MRF6S9060NBR1
MRF6S9060MR1
MRF6S9060MBR1
880 MHz, 14 W AVG., 28 V
SINGLE N - CDMA
LATERAL N - CHANNEL
BROADBAND RF POWER MOSFETs
CASE 1265- 08, STYLE 1
TO - 270 - 2
PLASTIC
MRF6S9060NR1(MR1)
CASE 1337 - 03, STYLE 1
TO - 272 - 2
PLASTIC
MRF6S9060NBR1(MBR1)
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain - Source Voltage
VDSS
- 0.5, +68
Vdc
Gate - Source Voltage
VGS
- 0.5, + 12
Vdc
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD
227
1.3
W
W/°C
Storage Temperature Range
Tstg
- 65 to +150
°C
Operating Junction Temperature
TJ
200
°C
NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
 Freescale Semiconductor, Inc., 2005. All rights reserved.
RF Device Data
Freescale Semiconductor
MRF6S9060NR1 MRF6S9060NBR1 MRF6S9060MR1 MRF6S9060MBR1
1
Table 2. Thermal Characteristics
Characteristic
Value (1,2)
Symbol
Thermal Resistance, Junction to Case
Case Temperature 80°C, 60 W CW
Case Temperature 80°C, 14 W CW
RθJC
Unit
°C/W
0.77
0.88
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22 - A114)
1A (Minimum)
Machine Model (per EIA/JESD22 - A115)
A (Minimum)
Charge Device Model (per JESD22 - C101)
IV (Minimum)
Table 4. Moisture Sensitivity Level
Test Methodology
Per JESD 22 - A113, IPC/JEDEC J - STD - 020
Rating
Package Peak Temperature
Unit
3
260
°C
Table 5. Electrical Characteristics (TC = 25°C unless otherwise noted)
Symbol
Min
Typ
Max
Unit
Zero Gate Voltage Drain Leakage Current
(VDS = 68 Vdc, VGS = 0 Vdc)
IDSS
—
—
10
µAdc
Zero Gate Voltage Drain Leakage Current
(VDS = 28 Vdc, VGS = 0 Vdc)
IDSS
—
—
1
µAdc
Gate - Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
IGSS
—
—
1
µAdc
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 200 µA)
VGS(th)
1
2
3
Vdc
Gate Quiescent Voltage
(VDS = 28 Vdc, ID = 450 mAdc)
VGS(Q)
—
2.9
—
Vdc
Drain - Source On - Voltage
(VGS = 10 Vdc, ID = 1.5 Adc)
VDS(on)
—
0.18
0.4
Vdc
gfs
—
4.2
—
S
Input Capacitance
(VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Ciss
—
106
—
pF
Output Capacitance
(VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Coss
—
33
—
pF
Reverse Transfer Capacitance
(VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Crss
—
1.4
—
pF
Characteristic
Off Characteristics
On Characteristics
Forward Transconductance
(VDS = 10 Vdc, ID = 3 Adc)
Dynamic Characteristics
Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 450 mA, Pout = 14 W Avg., f = 880 MHz, Single - Carrier
N - CDMA, 1.2288 MHz Channel Bandwidth Carrier. ACPR measured in 30 kHz Channel Bandwidth @ ±750 kHz Offset. PAR = 9.8 dB @
0.01% Probability on CCDF
Power Gain
Gps
20.5
21.4
23.5
dB
Drain Efficiency
ηD
30.5
32.1
—
%
ACPR
—
- 47.6
- 45
dBc
IRL
—
- 15.3
-9
dB
Adjacent Channel Power Ratio
Input Return Loss
1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access
the MTTF calculators by product.
2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
MRF6S9060NR1 MRF6S9060NBR1 MRF6S9060MR1 MRF6S9060MBR1
2
RF Device Data
Freescale Semiconductor
Table 5. Electrical Characteristics (TC = 25°C unless otherwise noted) (continued)
Characteristic
Symbol
Min
Typ
Max
Unit
Typical GSM EDGE Performances (In Freescale GSM EDGE Test Fixture Optimized for 921 - 960 MHz, 50 οhm system)
VDD = 28 Vdc, IDQ = 500 mA, Pout = 21 W Avg., f = 921 - 960 MHz, GSM EDGE Signal
Power Gain
Gps
—
20
—
dB
Drain Efficiency
ηD
—
46
—
%
Error Vector Magnitude
EVM
—
1.5
—
%
Spectral Regrowth at 400 kHz Offset
SR1
—
- 62
—
dBc
Spectral Regrowth at 600 kHz Offset
SR2
—
- 78
—
dBc
Typical CW Performances (In Freescale GSM Test Fixture Optimized for 921 - 960 MHz, 50 οhm system) VDD = 28 Vdc,
IDQ = 500 mA, Pout = 60 W, f = 921 - 960 MHz
Power Gain
Gps
—
20
—
dB
Drain Efficiency
ηD
—
63
—
%
IRL
—
- 12
—
dB
P1dB
—
67
—
W
Input Return Loss
Pout @ 1 dB Compression Point
(f = 940 MHz)
MRF6S9060NR1 MRF6S9060NBR1 MRF6S9060MR1 MRF6S9060MBR1
RF Device Data
Freescale Semiconductor
3
B2
B1
R1
VBIAS
+
+
C9
RF
INPUT
C15
R3
R2
C7
C8
Z2
Z3
Z4
Z5
L1
Z6
+
+
+
C16
C17
C19
C11 L2
Z10
Z1
R4
Z7
Z8
Z11
Z12
Z13
C10
C1
C13
C12
C18
RF
Z15 OUTPUT
Z14
C6 Z9
VSUPPLY
C14
DUT
C2
Z1
Z2
Z3
Z4
Z5
Z6
Z7
Z8
0.215″
0.221″
0.500″
0.460″
0.040″
0.280″
0.087″
0.435″
x 0.065″
x 0.065″
x 0.100″
x 0.270″
x 0.270″
x 0.270″
x 0.525″
x 0.525″
C3
C4
C5
Microstrip
Microstrip
Microstrip
Microstrip
Microstrip
x 0.530″ Taper
Microstrip
Microstrip
Z9
Z10
Z11
Z12
Z13
Z14
Z15
PCB
0.057″ x 0.525″ Microstrip
0.360″ x 0.270″ Microstrip
0.063″ x 0.270″ Microstrip
0.360″ x 0.065″ Microstrip
0.170″ x 0.065″ Microstrip
0.880″ x 0.065″ Microstrip
0.260″ x 0.065″ Microstrip
Taconic RF - 35 0.030″, εr = 3.5
Figure 1. MRF6S9060NR1(NBR1)/MR1(MBR1) Test Circuit Schematic
Table 6. MRF6S9060NR1(NBR1)/MR1(MBR1) Test Circuit Component Designations and Values
Part
Description
Part Number
Manufacturer
B1
Ferrite Bead
95F786
Newark
B2
Ferrite Bead
95F787
Newark
C1, C8, C14, C15
47 pF Chip Capacitors
100B470JP500X
Newark
C2, C4, C13
0.8 - 8.0 pF Variable Capacitors, Gigatrim
44F3360
Newark
C3
3.0 pF Chip Capacitor
100B3R0JP500X
Newark
C5, C6
15 pF Chip Capacitors
100B150JP500X
Newark
C7, C16, C17
10 µF, 35 V Tantalum Capacitors
93F2975
Newark
C9
100 µF, 50 V Electrolytic Capacitor
51F2913
Newark
C10, C11
13 pF Chip Capacitors
100B130JP500X
Newark
C12
3.9 pF Chip Capacitor
100B3R9JP500X
Newark
C18
0.56 µF Chip Capacitor
700A561MP150X
Newark
C19
470 µF, 63 V Electrolytic Capacitor
95F4579
Newark
L1, L2
12.5 nH Inductor
A04T - 5
Coilcraft
R1
1 kΩ Chip Resistor
05F1545
Newark
R2
560 kΩ Chip Resistor
84N2435
Newark
R3
12 Ω Chip Resistor
97C9103
Newark
R4
27 W Chip Resistor
04H7058
Newark
MRF6S9060NR1 MRF6S9060NBR1 MRF6S9060MR1 MRF6S9060MBR1
4
RF Device Data
Freescale Semiconductor
C7
VGG
R2
C19
B1
R3
R1
C8
C15
C9
C2
C3
C5
R4
C18
L2
CUT OUT AREA
C6
L1
C1
VDD
C16 C17
B2
C11
C10
C12
C14
C13
C4
TO−270/272
Surface /
Bolt down
Figure 2. MRF6S9060NR1(NBR1)/MR1(MBR1) Test Circuit Component Layout
MRF6S9060NR1 MRF6S9060NBR1 MRF6S9060MR1 MRF6S9060MBR1
RF Device Data
Freescale Semiconductor
5
21.8
35
ηD
30
21.6
Gps
21.4
−45
ACPR
21.2
−50
IRL
21
−55
−60
20.8
ALT1
−65
920
20.6
840
850
860
870
880
890
900
910
−8
ACPR (dBc), ALT1 (dBc)
Gps, POWER GAIN (dB)
40
VDD = 28 Vdc, Pout = 14 W (Avg.), IDQ = 450 mA
N−CDMA IS−95 Pilot, Sync, Paging, Traffic Codes
8 Through 13
−12
−16
−20
−24
IRL, INPUT RETURN LOSS (dB)
22
ηD, DRAIN
EFFICIENCY (%)
TYPICAL CHARACTERISTICS
f, FREQUENCY (MHz)
48
ηD
46
44
21
Gps
20.8
−32
ACPR
20.6
−40
20.4
IRL
−48
ALT1
20.2
20
840
−56
−64
850
860
870
880
890
900
910
−4
ACPR (dBc), ALT1 (dBc)
Gps, POWER GAIN (dB)
VDD = 28 Vdc, Pout = 28 W (Avg.), IDQ = 450 mA
21.4 N−CDMA IS−95 Pilot, Sync, Paging, Traffic Codes
8 Through 13
21.2
−8
−12
−16
−20
IRL, INPUT RETURN LOSS (dB)
50
21.6
ηD, DRAIN
EFFICIENCY (%)
Figure 3. Single - Carrier N - CDMA Broadband Performance @ Pout = 14 Watts Avg.
920
f, FREQUENCY (MHz)
Figure 4. Single - Carrier N - CDMA Broadband Performance @ Pout = 28 Watts Avg.
23
IDQ = 675 mA
22
Gps, POWER GAIN (dB)
IMD, THIRD ORDER
INTERMODULATION DISTORTION (dBc)
−10
550 mA
450 mA
21
350 mA
20
225 mA
19
18
VDD = 28 Vdc, f1 = 880 MHz, f2 = 880.1 MHz
Two −Tone Measurements, 100 kHz Tone Spacing
VDD = 28 Vdc, f1 = 880 MHz, f2 = 880.1 MHz
Two −Tone Measurements, 100 kHz Tone Spacing
−20
−30
IDQ = 225 mA
−40
350 mA
−50
450 mA
550 mA
675 mA
−60
17
1
10
100
300
1
Figure 5. Two - Tone Power Gain versus
Output Power
10
100
Pout, OUTPUT POWER (WATTS) PEP
Pout, OUTPUT POWER (WATTS) PEP
Figure 6. Third Order Intermodulation Distortion
versus Output Power
MRF6S9060NR1 MRF6S9060NBR1 MRF6S9060MR1 MRF6S9060MBR1
6
RF Device Data
Freescale Semiconductor
−10
IMD, INTERMODULATION DISTORTION (dBc)
IMD, INTERMODULATION DISTORTION (dBc)
TYPICAL CHARACTERISTICS
VDD = 28 Vdc, IDQ = 450 mA, f1 = 880 MHz
−20 f2 = 880.1 MHz, Two −Tone Measurements
Center Frequency = 880 MHz
−30
−40
−50
3rd Order
−60
5th Order
−70
7th Order
−80
1
10
100
300
0
VDD = 28 Vdc, Pout = 60 W (PEP)
IDQ = 450 mA, Two −Tone Measurements
Center Frequency = 880 MHz
−10
−20
−30
3rd Order
−40
5th Order
−50
−60
7th Order
−70
0.05 0.1
1
10
100
Pout, OUTPUT POWER (WATTS) PEP
TWO −TONE SPACING (MHz)
Figure 7. Intermodulation Distortion Products
versus Output Power
Figure 8. Intermodulation Distortion Products
versus Tone Spacing
Pout, OUTPUT POWER (dBm)
56
55
54
Ideal
P3dB = 50 dBm (150 W)
53
52
51
50
49
300
P1dB = 49.1 dBm (100 W)
Actual
48
47
VDD = 28 Vdc, IDQ = 450 mA
Pulsed CW, 8 µsec(on), 1 msec(off)
Center Frequency = 880 MHz
46
45
44
22
23
24
25
26
27
28
29
30
31
32
33
34
Pin, INPUT POWER (dBm)
55
−25
ηD
VDD = 28 Vdc, IDQ = 450 mA
f = 880 MHz, N−CDMA IS−95 Pilot,
Sync, Paging, Traffic Codes 8
Through 13
45
ALT1
85_C
−45
−30_C
25_C
ACPR
−55
35
25
Gps
15
TC = 25_C
−35
25_C
85_C
−65
−30_C
5
−5
25_C
−75
−85
1
10
ACPR, ADJACENT CHANNEL POWER RATIO (dBc)
ALT1, CHANNEL POWER (dBc)
ηD, DRAIN EFFICIENCY (%), Gps, POWER GAIN (dB)
Figure 9. Pulse CW Output Power versus
Input Power
Pout, OUTPUT POWER (WATTS) AVG.
Figure 10. Single - Carrier N - CDMA ACPR, ALT1, Power
Gain and Drain Efficiency versus Output Power
MRF6S9060NR1 MRF6S9060NBR1 MRF6S9060MR1 MRF6S9060MBR1
RF Device Data
Freescale Semiconductor
7
TYPICAL CHARACTERISTICS
22
21
70
Gps
25_C
25_C
60
85_C
50
20.5
85_C
20
40
19.5
30
19
20
ηD
18.5
VDD = 28 Vdc
IDQ = 450 mA
f = 880 MHz
18
1
ηD, DRAIN EFFICIENCY (%)
TC = −30_C
21.5
Gps, POWER GAIN (dB)
80
−30_C
10
0
10
100
Pout, OUTPUT POWER (WATTS) CW
Figure 11. Power Gain and Drain Efficiency
versus CW Output Power
Gps, POWER GAIN (dB)
22
21
20
19
18
17
28 V
32 V
24 V
16
15
14
20 V
16 V
13
12
11
10
IDQ = 450 mA
f = 880 MHz
VDD = 12 V
0
10
20 30 40 50 60
70 80 90 100 110 120 130 140
Pout, OUTPUT POWER (WATTS) CW
Figure 12. Power Gain versus Output Power
MTTF FACTOR (HOURS X AMPS2)
109
108
107
106
90 100 110 120 130 140 150 160 170 180 190 200 210
TJ, JUNCTION TEMPERATURE (°C)
This above graph displays calculated MTTF in hours x ampere2
drain current. Life tests at elevated temperatures have correlated to
better than ±10% of the theoretical prediction for metal failure. Divide
MTTF factor by ID2 for MTTF in a particular application.
Figure 13. MTTF Factor versus Junction Temperature
MRF6S9060NR1 MRF6S9060NBR1 MRF6S9060MR1 MRF6S9060MBR1
8
RF Device Data
Freescale Semiconductor
N - CDMA TEST SIGNAL
100
−10
1.2288 MHz
Channel BW
−20
−30
1
−40
−50
0.1
(dB)
PROBABILITY (%)
10
IS−95 CDMA (Pilot, Sync, Paging, Traffic Codes 8
Through 13) 1.2288 MHz Channel Bandwidth
Carriers. ACPR Measured in 30 kHz Bandwidth @
±750 kHz Offset. PAR = 9.8 dB @ 0.01% Probability
on CCDF.
0.01
0.001
−60
−70
−80
−ACPR @ 30 kHz
Integrated BW
−90
0.0001
0
2
4
6
8
10
+ACPR @ 30 kHz
Integrated BW
−100
PEAK −TO−AVERAGE (dB)
Figure 14. Single - Carrier CCDF N - CDMA
−110
−3.6 −2.9 −2.2
−1.5
−0.7
0
0.7
1.5
2.2
2.9
3.6
f, FREQUENCY (MHz)
Figure 15. Single - Carrier N - CDMA Spectrum
MRF6S9060NR1 MRF6S9060NBR1 MRF6S9060MR1 MRF6S9060MBR1
RF Device Data
Freescale Semiconductor
9
Zo = 5 Ω
f = 910 MHz
f = 910 MHz
Zload
Zsource
f = 850 MHz
f = 850 MHz
VDD = 28 Vdc, IDQ = 450 mA, Pout = 14 W Avg.
f
MHz
Zsource
Ω
Zload
Ω
850
0.44 - j0.20
2.28 + j0.23
865
0.44 - j0.07
2.18 + j0.33
880
0.45 + j0.50
2.20 + j0.47
895
0.48 + j0.18
2.15 + j0.61
910
0.52 + j0.29
2.00 + j0.68
Zsource = Test circuit impedance as measured from
gate to ground.
Zload
= Test circuit impedance as measured
from drain to ground.
Output
Matching
Network
Device
Under
Test
Input
Matching
Network
Z
source
Z
load
Figure 16. Series Equivalent Source and Load Impedance
MRF6S9060NR1 MRF6S9060NBR1 MRF6S9060MR1 MRF6S9060MBR1
10
RF Device Data
Freescale Semiconductor
NOTES
MRF6S9060NR1 MRF6S9060NBR1 MRF6S9060MR1 MRF6S9060MBR1
RF Device Data
Freescale Semiconductor
11
NOTES
MRF6S9060NR1 MRF6S9060NBR1 MRF6S9060MR1 MRF6S9060MBR1
12
RF Device Data
Freescale Semiconductor
NOTES
MRF6S9060NR1 MRF6S9060NBR1 MRF6S9060MR1 MRF6S9060MBR1
RF Device Data
Freescale Semiconductor
13
PACKAGE DIMENSIONS
E1
B
2X
E4
aaa
D
aaa
M
M
2X
D3
D A
2X
D1
b1
D A
PIN ONE ID
E
A
E5
E3
PIN 2
D2
PIN 3
ÇÇÇÇ
ÇÇÇÇ
ÇÇÇÇ
ÇÇÇÇ
ÇÇÇÇ
ÇÇÇÇ
ÇÇÇÇ
ÇÇÇÇ
ÇÇÇÇ
EXPOSED
HEATSINK AREA
PIN 1
DIM
A
A1
A2
D
D1
D2
D3
E
E1
E2
E3
E4
E5
F
b1
c1
aaa
BOTTOM VIEW
F
c1 H
DATUM
PLANE
NOTES:
1. CONTROLLING DIMENSION: INCH.
2. INTERPRET DIMENSIONS AND TOLERANCES
PER ASME Y14.5M−1994.
3. DATUM PLANE −H− IS LOCATED AT TOP OF LEAD
AND IS COINCIDENT WITH THE LEAD WHERE
THE LEAD EXITS THE PLASTIC BODY AT THE
TOP OF THE PARTING LINE.
4. DIMENSIONS “D1" AND “E1" DO NOT INCLUDE
MOLD PROTRUSION. ALLOWABLE PROTRUSION
IS .006 PER SIDE. DIMENSIONS “D1" AND “E1" DO
INCLUDE MOLD MISMATCH AND ARE DETER−
MINED AT DATUM PLANE −H−.
5. DIMENSION b1 DOES NOT INCLUDE DAMBAR
PROTRUSION. ALLOWABLE DAMBAR
PROTRUSION SHALL BE .005 TOTAL IN EXCESS
OF THE b1 DIMENSION AT MAXIMUM MATERIAL
CONDITION.
6. DATUMS −A− AND −B− TO BE DETERMINED AT
DATUM PLANE −H−.
7. DIMENSION A2 APPLIES WITHIN ZONE “J" ONLY.
8. DIMENSIONS “D" AND “E2" DO NOT INCLUDE
MOLD PROTRUSION. ALLOWABLE PROTRUSION
IS .003 PER SIDE. DIMENSIONS “D" AND “E2" DO
INCLUDE MOLD MISMATCH AND ARE DETER−
MINED AT DATUM PLANE −D−.
ZONE J
A
A1
INCHES
MIN
MAX
.078
.082
.039
.043
.040
.042
.416
.424
.378
.382
.290
.320
.016
.024
.436
.444
.238
.242
.066
.074
.150
.180
.058
.066
.231
.235
.025 BSC
.193
.199
.007
.011
.004
MILLIMETERS
MIN
MAX
1.98
2.08
0.99
1.09
1.02
1.07
10.57
10.77
9.60
9.70
7.37
8.13
0.41
0.61
11.07
11.28
6.04
6.15
1.68
1.88
3.81
4.57
1.47
1.68
5.87
5.97
0.64 BSC
4.90
5.06
0.18
0.28
0.10
STYLE 1:
PIN 1. DRAIN
2. GATE
3. SOURCE
2X
A2
NOTE 7
E2
E5
D
CASE 1265 - 08
ISSUE H
TO - 270- 2
PLASTIC
MRF6S9060NR1(MR1)
MRF6S9060NR1 MRF6S9060NBR1 MRF6S9060MR1 MRF6S9060MBR1
14
RF Device Data
Freescale Semiconductor
2X
aaa
M
A
E1
B
r1
C A B
GATE
LEAD
D1
2X
ÉÉÉÉÉ
ÉÉÉÉÉ
ÉÉÉÉÉ
ÉÉÉÉÉ
ÉÉÉÉÉ
ÉÉÉÉÉ
ÉÉÉÉÉ
ÉÉÉÉÉ
ÉÉÉÉÉ
ÉÉÉÉÉ
ÉÉÉÉÉ
ÉÉÉÉÉ
ÉÉÉÉÉ
DRAIN
LEAD
b1
aaa
M
D
C A
2
E
DRAIN ID
PIN 3
1
NOTE 8
E2
VIEW Y - Y
c1
H
F
ZONE "J"
DATUM
PLANE
A
A1
A2
7
E2
Y
Y
C
SEATING
PLANE
STYLE 1:
PIN 1. DRAIN
2. GATE
3. SOURCE
CASE 1337 - 03
ISSUE C
TO - 272- 2
PLASTIC
MRF6S9060NBR1(MBR1)
NOTES:
1. CONTROLLING DIMENSION: INCH.
2. INTERPRET DIMENSIONS AND TOLERANCES
PER ASME Y14.5M, 1994.
3. DATUM PLANE −H− IS LOCATED AT THE TOP OF
LEAD AND IS COINCIDENT WITH THE LEAD
WHERE THE LEAD EXITS THE PLASTIC BODY AT
THE TOP OF THE PARTING LINE.
4. DIMENSIONS "D" AND "E1" DO NOT INCLUDE
MOLD PROTRUSION. ALLOWABLE PROTRUSION
IS .006 PER SIDE. DIMENSIONS "D" AND "E1" DO
INCLUDE MOLD MISMATCH AND ARE
DETERMINED AT DATUM PLANE −H−.
5. DIMENSION "b1" DOES NOT INCLUDE DAMBAR
PROTRUSION. ALLOWABLE DAMBAR
PROTRUSION SHALL BE .005 TOTAL IN EXCESS
OF THE "b1" DIMENSION AT MAXIMUM MATERIAL
CONDITION.
6. DATUMS −A− AND −B− TO BE DETERMINED AT
DATUM PLANE −H−.
7. DIMENSION A2 APPLIES WITHIN ZONE "J" ONLY.
8. CROSSHATCHING REPRESENTS THE EXPOSED
AREA OF THE HEAT SLUG.
DIM
A
A1
A2
D
D1
E
E1
E2
F
b1
c1
r1
aaa
INCHES
MIN
MAX
.100
.104
.039
.043
.040
.042
.928
.932
.810 BSC
.438
.442
.248
.252
.241
.245
.025 BSC
.193
.199
.007
.011
.063
.068
.004
MILLIMETERS
MIN
MAX
2.54
2.64
0.99
1.09
1.02
1.07
23.57
23.67
20.57 BSC
11.12
11.23
6.30
6.40
6.12
6.22
0.64 BSC
5.05
4.90
.18
.28
1.60
1.73
.10
MRF6S9060NR1 MRF6S9060NBR1 MRF6S9060MR1 MRF6S9060MBR1
RF Device Data
Freescale Semiconductor
15
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MRF6S9060NR1 MRF6S9060NBR1 MRF6S9060MR1 MRF6S9060MBR1
Document Number: MRF6S9060
Rev. 1, 6/2005
16
RF Device Data
Freescale Semiconductor