CGY 196 GaAs MMIC Preliminary Data l l l l l l l l l Broadband Power Amplifier [ 800..3500 Mhz ] DECT,PHS,PCS,GSM,AMPS,WLAN,WLL Single Voltage Supply Operating voltage range: 2.0to 6 V Pout = 25.5dBm at Vd=2.4V Pout = 27.0dBm at Vd=3.0V Pout = 30.0dBm at Vd=5.0V Overall power added efficiency up to 50 % Easy external matching ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering code (taped) Package CGY 196 t.b.d. t.b.d. SCT598 Maximum ratings Characteristics Symbol max. Value Unit Positive supply voltage VD 6 V Supply current ID 1.0 A Maximum input power Pinmax 20 dBm Channel temperature 150 °C Storage temperature TCh Tstg -55...+150 °C Total power dissipation (Ts < 81 °C) Ptot 1.0 W PPulse 2.0 W Characteristics Symbol max. Value Unit Channel-soldering point RthChS 70 K/W Ts: Temperature at soldering point Pulse peak power Thermal Resistance Siemens Aktiengesellschaft Semiconductor Group 1 1 16.6.1998 HL HF1998-11-01 PE GaAs CGY 196 Functional Block Diagram VD1 VD2 RFout/Vd3 RFin/Vg G ND G ND Pin # Name 1 RFin/Vg 2 GND RF and DC ground 3 VD2 Pos. drain voltage of the 2nd stage 4 n.c. not connected 5 n.c. not connected 6 G ND Configuration RF input power + Gate voltage [0V internal] RFout/VD3 RF output power / Pos. drain voltage of the 3rd stage 7 GND RF and DC ground 8 VD1 Pos. drain voltage of the 1st stage DC characteristics Characteristics Symbol Conditions stage 1 IDSS1 VD1=3V 45 mA stage 2 IDSS2 VD2=3V 65 mA stage 3 IDSS2 VD2=3V 340 mA Transconductance stage 1 gfs1 VD=3V, ID=50mA 110 mS stage 2 gfs2 VD=3V, ID=300mA 650 mS stage 3 gfs3 VD=3V, ID=300mA 650 mS Drain current Siemens Aktiengesellschaft Semiconductor Group 2 2 min typ max Unit 16.6.1998 HL HF1998-11-01 PE GaAs CGY 196 Determination of Permissible Total Power Dissipation for Continuous and Pulse Operation The dissipated power is the power which remains in the chip and heats the device. It does not contain RF signals which are coupled out consistently. a) Continuous Wave / DC Operation For the determination of the permissible total power dissipation Ptot-DC from the diagram below it is necessary to obtain the temperature of the soldering point TS first. There are two cases: • When RthSA (soldering point to ambient) is not known: Measure TS with a temperature sensor at the leads were the heat is transferred from the device to the board ( normally at the widest source or ground lead for GaAs ). Use a small sensor of low heat transport, for example a thermoelement ( < 1mm ) with thin wires or a temperature indicating paper while the device is operating. • When RthSA is already known: TS = Pdiss x RthSA + TA Permissible Total Power Dissipation in DC Operation mW 1600 Ptot DC = f (Ts) 1400 1200 1000 75 800 600 400 200 0 0 25 50 75 100 Temperature of soldering point, Ts Siemens Aktiengesellschaft Semiconductor Group 3 3 125 150 °C 16.6.1998 HL HF1998-11-01 PE GaAs CGY 196 b) Pulsed Operation For the calculation of the permissible pulse load Ptot-max the following formula is applicable: Ptot-max = Ptot-DC x Pulse factor = Ptot-DC x ( Ptot-max / Ptot-DC ) Use the values for Ptot-DC as derived from the above diagram and for the pulse factor = Ptot-max / Ptot-DC from the following diagram to get a specific value. Pulse factor: Ptot-max should not exceed the absolute maximum rating for the dissipated power PPulse = ” Pulse peak power ” = 2 W Siemens Aktiengesellschaft Semiconductor Group 4 4 16.6.1998 HL HF1998-11-01 PE GaAs CGY 196 c) Reliability Considerations This procedure yields the upper limit for the power dissipation for continuous wave (cw) and pulse applications which corresponds to the maximum allowed channel temperature. For best reliability keep the channel temperature low. The following formula allows to track the individual contributions which determine the channel temperature. Tch = Channel temperature junction temperature) ( Pdiss (= Siemens Aktiengesellschaft Semiconductor Group x Power dissipated in the chip. It does not contain decoupled RFpower RthChS ) + Rth of device from channel to soldering point 5 5 TS Temperature of soldering point, measured or calculated 16.6.1998 HL HF1998-11-01 PE GaAs CGY 196 Electrical characteristics [ 3.0V DECT-Application: PCB-Layout see page 9] (TA = 25°C , f=1.89 GHz, ZS=ZL=50 Ohm, unless otherwise specified) Characteristics Symbol min typ max Supply current VD=3.0V; Pin = +0 dBm Supply current VD=3.0V; Pin = -10 dBm Gain VD=3.0V; Pin = -10 dBm Output Power VD=3.0V; Pin = 0 dBm Overall Power added Efficiency VD=3.0V; Pin = +0 dBm Overall Power added Efficiency VD=3.0V; Pin = 3 dBm Supply current VD=4.8V; Pin = -10 dBm Supply current VD=4.8V; Pin = 0 dBm Gain VD=4.8V; Pin = -10 dBm Output Power VD=4.8V; Pin = 0 dBm Overall Power added Efficiency VD=4.8V; Pin = 0 dBm Overall Power added Efficiency VD=4.8V; Pin = 5 dBm Off Isolation VD=0V; Pin = 0 dBm Load mismatch Pin=0dBm , VD≤3.6V , ZS=50 Ohm, Load VSWR = 20:1 for all phase, Load mismatch Pin=3dBm , VD≤5.0V , ZS=50 Ohm, Load VSWR = 20:1 for all phase, Stability Pin=0dBm, VD=3.6V, ZS=50 Ohm, Load VSWR = 3:1 for all phase Stability Pin=3dBm , VD=5.0V , ZS=50 Ohm, Load VSWR = 3:1 for all phase, Siemens Aktiengesellschaft Semiconductor Group Unit IDD - 300 - mA IDD - 450 - mA G 32 dB Po 26.0 dBm PAE 45 - % PAE 50 - % IDD - 450 - mA IDD - 370 - mA G - 32 - dB Po 29 PAE 45 - % PAE 50 - % -S21 40 dB - No module damage for 10 sec. - - No module damage for 10 sec. - - All spurious output more than 70 dB below desired signal level All spurious output more than 70 dB below desired signal level - - 6 6 dBm - 16.6.1998 HL HF1998-11-01 PE GaAs CGY 196 Output power and power added efficiency pulsed mode: T=417µs, duty cycle 12.5% Electrical characteristics [3.0V DECT-Application: PCB-Layout see page 9] CGY196 Vd=3.3V, duty cycle 10% 27,0 60,0 26,0 55,0 25,0 50,0 24,0 45,0 23,0 40,0 22,0 35,0 21,0 30,0 20,0 25,0 19,0 20,0 Pout [dBm] PAE [%] 15,0 18,0 17,0 -11 -10 10,0 -9 -8 -7 -6 -5 -4 -3 -2 -1 0 1 2 3 4 5 6 7 8 9 10 Pin/dBm CGY196 VD=5.0V, duty cycle 10% 30,0 60,0 29,0 55,0 28,0 50,0 27,0 45,0 26,0 40,0 25,0 35,0 24,0 30,0 23,0 25,0 20,0 22,0 Pout [dBm] PAE [%] 21,0 20,0 -11 -10 15,0 10,0 -9 -8 -7 -6 -5 -4 -3 -2 -1 0 1 2 3 4 5 6 7 8 9 10 Pin/dBm Siemens Aktiengesellschaft Semiconductor Group 7 7 16.6.1998 HL HF1998-11-01 PE GaAs CGY 196 Electrical characteristics [3.0V DECT-Application: PCB-Layout see page 9] S-Parameter [pulsed mode: T=417µs, duty cycle 12.5%, Pin=0dBm,Vd=3.3V] + o o o o o o o o o * o o o o o o x o +* +* * * * * + + + +* + + * * * * + + +* + o + + * + * + * + * * o x x x x x x x x x x x x x x x x x Pout,Id = f (Vd) | Pin=0dBm [pulsed mode: T=417µs, duty cycle 12.5%] CGY196 400 350 300 250 200 150 100 50 0 40 30 20 10 0 -10 -20 -30 -40 0,0 1,0 2,0 3,0 4,0 I(mA) Pout(dBm) 5,0 Vd / V Siemens Aktiengesellschaft Semiconductor Group 8 8 16.6.1998 HL HF1998-11-01 PE GaAs CGY 196 Electrical characteristics [3.0V DECT-Application: PCB-Layout see page 9] Harmonic Distortion CGY196 Vd=3.3V -30,0 -35,0 Distortion / dBc -40,0 -45,0 2f 3f -50,0 -55,0 -60,0 -65,0 -70,0 -10 -9 -8 -7 -6 -5 -4 -3 -2 -1 0 1 2 3 4 5 Pin / dBm Harmonic Distortion CGY196 Vd=4.8V -30,0 -35,0 Distortion / dBc -40,0 -45,0 2f 3f -50,0 -55,0 -60,0 -65,0 -70,0 -10 -9 -8 -7 -6 -5 -4 -3 -2 -1 0 1 2 3 4 5 Pin / dBm Siemens Aktiengesellschaft Semiconductor Group 9 9 16.6.1998 HL HF1998-11-01 PE GaAs CGY 196 Test Board Layout [3.0V DECT-Application f=1.89GHz ] Siemens Aktiengesellschaft Semiconductor Group 10 10 16.6.1998 HL HF1998-11-01 PE GaAs CGY 196 Electrical characteristics [2.4V DECT-Application: PCB-Layout see page 12] (TA = 25°C , f=1.89 GHz, ZS=ZL=50 Ohm, unless otherwise specified) Characteristics Symbol min typ max Supply current VD=2.4V; Pin = +0 dBm Supply current VD=2.4V; Pin = -10 dBm Output Power VD=2.4V; Pin = 0 dBm Overall Power added Efficiency VD=2.4V; Pin = +0 dBm Supply current VD=2.2V; Pin = +0 dBm Supply current VD=2.2V; Pin = -10 dBm Output Power VD=2.2V; Pin = 0 dBm Overall Power added Efficiency VD=2.2V; Pin = +0 dBm Supply current VD=3.0V; Pin = +0 dBm Supply current VD=3.0V; Pin = -10 dBm Output Power VD=3.0V; Pin = 0 dBm Overall Power added Efficiency VD=3.0V; Pin = +0 dBm Off Isolation VD=0V; Pin = 0 dBm Load mismatch Pin=0dBm , VD≤3.6V , ZS=50 Ohm, Load VSWR = 20:1 for all phase, Load mismatch Pin=3dBm , VD≤5.0V , ZS=50 Ohm, Load VSWR = 20:1 for all phase, Stability Pin=0dBm, VD=3.6V, ZS=50 Ohm, Load VSWR = 3:1 for all phase Stability Pin=3dBm , VD=5.0V , ZS=50 Ohm, Load VSWR = 3:1 for all phase, Siemens Aktiengesellschaft Semiconductor Group Unit IDD - 360 - mA IDD - 450 - mA Po 25.7 PAE 44 - % dBm IDD - 350 - mA IDD - 450 - mA Po 25.1 PAE 42 - % dBm IDD - 370 - mA IDD - 450 - mA Po 27.0 PAE 44 -S21 34 dB - No module damage for 10 sec. - - No module damage for 10 sec. - - All spurious output more than 70 dB below desired signal level All spurious output more than 70 dB below desired signal level - - 11 11 dBm - % - 16.6.1998 HL HF1998-11-01 PE GaAs CGY 196 Pout,Id = f (Vd) | Pin=0dBm [pulsed mode: T=417µs, duty cycle 12.5%] CGY196 2.4V Applikation 450 400 350 300 250 200 150 100 50 0 40 30 20 10 0 -10 -20 -30 -40 -50 I(mA) Pout(dBm) 0,0 1,0 2,0 3,0 4,0 5,0 Vd / V Siemens Aktiengesellschaft Semiconductor Group 12 12 16.6.1998 HL HF1998-11-01 PE GaAs CGY 196 Test Board Layout [2.4V DECT-Application f=1.89GHz ] Siemens Aktiengesellschaft Semiconductor Group 13 13 16.6.1998 HL HF1998-11-01 PE GaAs CGY 196 High Frequency Semiconductors SIEMENS Type Package CGY196 GaAs MMIC File Date D:\Projekte\AKTUELL\EH_DB\lie ferung_pdf\Lieferung\word\cgy19 SCT598 26.02.1998 Key-word Notes on Processing Preliminary soldering recommendation • Foot Print drawing C63060-A2123-A001-01-0027 • Soldering wave soldering: reflow soldering: (IR or VPR) unsuitable suitable soldering profile: ramp-up preheating ramp-up peak exposure to molten solder typ. solder temperature peak temperature ramp-down temperature gradient: time at 100 - 150 °C: temperature gradient above 183°C typ. 215-245°C max. peak 260°C temperature gradient: max. + 2 K/sec min. 90 sec. max. + 6 K/sec max. 150 sec max. 30 sec. max. 10 sec. min. - 6°C/sec (see also soldering standard profile of databook ‘package information’) comments slow ramp-up, long preheating phase and low max. temperature recommended • Solder paste thickness 150 - 200 µm • Control of soldering (voids) - visual inspection - cross sectioning - measurement of case temperature / thermal resistance case to ambient • Jedec A-112A level 1 storage floor life at 30°C/90% unlimited • IPC-9501 (IPC-4202) level 111 storage floor life at 30°C/60% unlimited IR/Convection; max. 245°C; < 6K/sec. Siemens Aktiengesellschaft Semiconductor Group 14 14 16.6.1998 HL HF1998-11-01 PE GaAs CGY 196 Published by Siemens AG, Bereich Halbleiter, Marketing-Kommunikation, Balanstraße 73, D-81541 München. copyright Siemens AG 1996. All Rights Reserved. As far as patents or other rights of third parties are concerned, liability is only assumed for components per se, not for applications, processes and cirucits implemented within components or assemblies. The information describes the type of component and shall not be considered as assured characteristics. Terms of delivery and rights to change design reserved. For questions on technology, delivery, and prices please contact the Offices of Semiconductor Group in Germany or the Siemens Companies and Representatives worldwide (see address list). Due to technical requirements components may contain dangerous substances. For information on the type in question please contact your nearest Siemens Office, Semiconductor Group. Siemens AG is an approved CECC manufacturer. Siemens Aktiengesellschaft Semiconductor Group 15 15 16.6.1998 HL HF1998-11-01 PE GaAs