SEMICONDUCTOR KTA1275 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR COLOR TV VERT. DEFELECTION OUTPUT APPLICATION. COLOR TV CLASS B SOUND OUTPUT APPLICATION. B D FEATURES A ᴌHigh Voltage : VCEO=-160V. ᴌLarge Continuous Collector Current Capability. P DEPTH:0.2 ᴌComplementary to KTC3228. C G S Q R J K F SYMBOL RATING VCBO Collector-Base Voltage -160 VCEO Collector-Emitter Voltage -160 V -6 V Collector Current IC -1 A Base Current IB -0.5 A Collector Power Dissipation PC 1 W Junction Temperature Tj 150 ᴱ Tstg -55ᴕ150 ᴱ Storage Temperature Range H E M V VEBO Emitter-Base Voltage H UNIT 1 O CHARACTERISTIC F N 2 H M 3 H L D MAXIMUM RATING (Ta=25ᴱ) DIM A B C D MILLIMETERS 7.20 MAX 5.20 MAX 0.60 MAX 2.50 MAX E F G H J K L M 1.15 MAX 1.27 1.70 MAX 0.55 MAX _ 0.50 14.00 + 0.35 MIN _ 0.10 0.75 + 4 N O 25 1.25 Φ1.50 0.10 MAX _ 0.50 12.50 + 1.00 P Q R S N 1. EMITTER 2. COLLECTOR 3. BASE TO-92L ELECTRICAL CHARACTERISTICS (Ta=25ᴱ) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Collector Cut-off Current ICBO VCB=-150V, IE=0 - - -1.0 Ọ A Emitter Cut-off Current IEBO VEB=-6V, IC=0 - - -1.0 Ọ A V(BR)CEO IC=-10mA, IB=0 -160 - - V Collector-Emitter Breakdown Voltage DC Current Gain Collector-Emitter Saturation Voltage hFE (Note) VCE=-5V, IC=-200mA 60 - 320 VCE(sat) IC=-500mA, IB=-50mA - - -1.5 V -0.45 - -0.75 V 15 50 - MHz - - 35 pF Base-Emitter Voltage VBE Transition Frequency fT Cob Collector Output Capacitance Note : hFE Classification 1998. 12. 19 R:60ᴕ120 0:100ᴕ200, Revision No : 2 VCE=-5V, IC=-5mA VCE=-5V, IC=-200mA VCB=-10V, IE=0, f=1MHz Y:160ᴕ320 1/3 KTA1275 I C - V CE -0.8 -12 COMMON -10 EMITTER Ta=25 C -1.0 -8 -0.6 -6 -4.5 -0.4 -3 -2 I B =-1mA -0.2 0 0 0 -4 -8 -12 -16 -20 -24 EMITTER VCE =-5V -0.8 -0.6 -0.4 -0.2 0 -28 COMMON Ta=1 00 C Ta=25 C Ta=0 C -15 COLLECTOR CURRENT I C (A) COLLECTOR CURRENT I C (A) -1.0 I C - V BE -0.2 0 COLLECTOR-EMITTER VOLTAGE VCE (V) -0.4 -0.6 DC CURRENT GAIN h FE -10 -5 50 =-2 V 30 -100 -300 -500 Ta=100 C 25 100 0 50 30 COMMON EMITTER VCE =-10V VCE =-5V 10 -10 -1k -30 COLLECTOR CURRENT I C (mA) -50 -0.3 I C /IB =10 5 -0.05 -0.03 -5 -10 -30 -100 -300 COLLECTOR CURRENT I C (mA) 1998. 12. 19 Revision No : 2 -1k COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) COLLECTOR-EMITTER SATURATION VOLTAGE V CE(sat) (V) -0.5 -0.1 -300 -1k VCE(sat) - I C COMMON EMITTER Ta=25 C -1 -100 COLLECTOR CURRENT I C (mA) VCE(sat) - I C -2 -1.4 300 VCE DC CURRENT GAIN h FE 100 -30 -50 -1.2 h FE - I C COMMON EMITTER Ta=25 C 10 -10 -1.0 BASE-EMITTER VOLTAGE V BE (V) h FE - I C 300 -0.8 COMMON EMITTER IC /I B =10 -2 -1 -0.5 -0.3 -0.1 Ta=100 C -0.05 0 25 -0.03 -5 -10 -30 -100 -300 -1k COLLECTOR CURRENT I C (mA) 2/3 f T - IC TRANSITION FREQUENCY f T (MHz) 500 COMMON EMITTER 300 Ta=25 C 100 VCE =-5V 50 30 VCE =-2V 10 -2 -10 -5 -30 -100 -400 COLLECTOR CURRENT I C (mA) COLLECTOR OUTPUT CAPACITANCE C ob (pF) KTA1275 C ob - VCB 100 COMMON EMITTER f=1MHz 50 Ta=25 C 30 10 5 2 -1 -3 -5 -10 -30 -100 -200 COLLECTOR-BASE VOLTAGE V CB (V) SAFE OPERATING AREA I C MAX.(PULSED) * * *1 1m TH *10 0m 0m S ER S MA S LL IM ITE IC D MA X= DC 1.0 OP A ER AT IO N Ta= 25 C -1 -0.5 -0.3 S/ IT VCEO MAX. ED -0.01 -0.005 -0.003 M LI -0.1 -0.05 -0.03 B COLLECTOR CURRENT I C (A) -3 * SINGLE NONREPETITIVE PLUSE Ta=25 C CURVES MUST BE DERATED LINEARLY WITH INCREASE IN TEMPERATURE -0.001 -2 -5 -10 -30 -50 -100 -300 COLLECTOR-EMITTER VOLTAGE V CE (V) 1998. 12. 19 Revision No : 2 3/3