SEMICONDUCTOR KTA1270 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B C FEATURES A Excellent hFE Linearity : hFE(2)=25(Min.) at VCE=-6V, IC=-400mA. Complementary to KTC3202. N E K G ) SYMBOL RATING UNIT H F Collector-Base Voltage VCBO -35 V Collector-Emitter Voltage VCEO -30 V Emitter-Base Voltage VEBO -5 V Collector Current IC -500 mA Base Current IE 500 mA Collector Power Dissipation PC 625 mW Junction Temperature Tj 150 Tstg -55 150 Storage Temperature Range ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC L F 1 2 C CHARACTERISTIC 3 MILLIMETERS 4.70 MAX 4.80 MAX 3.70 MAX 0.45 1.00 1.27 0.85 0.45 _ 0.50 14.00 + 0.55 MAX 2.30 0.30 -+0.10 0.05 1.00 M MAXIMUM RATING (Ta=25 J D DIM A B C D E F G H J K L M N 1. EMITTER 2. COLLECTOR 3. BASE TO-92 ) SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Collector Cut-off Current ICBO VCB=-35V, IE=0 - - -0.1 A Emitter Cut-off Current IEBO VEB=-5V, IC=0 - - -0.1 A hFE(1) (Note) VCE=-1V, IC=-100mA 70 - 240 hFE(2) (Note) VCE=-6V, IC=-400mA 25 - - VCE(sat) IC=-100mA, IB=-10mA - -0.1 -0.25 V Base-Emitter Voltage VBE VCE=-1V, IC=-100mA - -0.8 -1.0 V Transition Frequency fT VCE=-6V, IC=-20mA - 200 - MHz VCB=-6V, IE=0, f=1MHz - 13 - pF DC Current Gain Collector-Emitter Saturation Voltage Cob Collector Output Capacitance Note : hFE(1) Classification hFE(2) Classification 2007. 6. 8 0:70 140, 0:25Min., Y:120 240 Y:40Min. Revision No : 1 1/2 KTA1270 hFE - IC -600 -8 -7 -500 -6 1k COMMON EMITTER Ta=25 C -5 COMMON EMITTER DC CURRENT GAIN hFE -4 -400 -3 -300 -2 -200 I B =-1mA -100 0 0 0 -1 -2 -3 -4 500 300 Ta=25 C 100 Ta=-25 C 30 -1 -3 -10 -30 -100 -300 -1k COLLECTOR CURRENT IC (mA) COLLECTOR-EMITTER VOLTAGE VCE (V) IB - VBE VCE(sat) - IC -3 -3k COMMON -0.1 Ta=100 C -0.05 -0.03 Ta=25 C Ta=-25 C -0.01 EMITTER VCE =-6V -300 00 C -1 -0.5 -0.3 -1k -100 Ta=1 COMMON EMITTER I C /I B =10 BASE CURRENT IB (µA) COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) VCE =-1V 50 10 -0.3 -5 VCE =-6V Ta=100 C -30 Ta=2 5 C Ta=25 C COLLECTOR CURRENT IC (mA) IC - VCE -10 -3 -1 -0.3 -0.5 -1 -3 -10 -30 -100 -300 -1k 0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 BASE-EMITTER VOLTAGE VBE (V) COLLECTOR CURRENT IC (mA) COLLECTOR CURRENT IC (mA) SAFE OPERATING AREA -10000 -1000 IC MAX(PULSE)* 1mS* 10mS* IC MAX(CONTINUOUS) 100mS* -100 DC DPERATION(Ta=25 C) -10 *SINGLE NONREPETITIVE PULSE Ta=25 C CURVES MUST BE DERATED LINEARLY WITH INCREASE IN TEMPERATURE -1 -0.1 -1 -10 -100 COLLECTOR-EMITTER VOLTAGE VCE (V) 2007. 6. 8 Revision No : 1 2/2