MCC omponents 21201 Itasca Street Chatsworth !"# $ % !"# MMBTA42 Features • • Surface Mount SOT-23 Package Capable of 300mWatts of Power Dissipation NPN Silicon High Voltage Transistor C Pin Configuration Top View 1D B E SOT-23 Electrical Characteristics @ 25°C Unless Otherwise Specified Symbol Parameter Min Max A Units D OFF CHARACTERISTICS V(BR)CEO V(BR)CBO V(BR)EBO ICBO IEBO Collector-Emitter Breakdown Voltage* (I C=1.0mAdc, IB=0) Collector-Base Breakdown Voltage (I C=100µAdc, IE=0) Emitter-Base Breakdown Voltage (I E=100µAdc, IC=0) Collector Cutoff Current (VCB=200Vdc, IE=0) Emitter Cutoff Current (VEB=6.0Vdc, IC=0) 300 Vdc 300 Vdc 6.0 Vdc 0.1 uAdc 0.1 uAdc C F B E H G J ON CHARACTERISTICS hFE K DC Current Gain* DIMENSIONS 25 40 40 (I C=1.0mAdc, VCE=10Vdc) (I C=10mAdc, VCE=10Vdc) (I C=30mAdc, VCE=10Vdc) VCE(sat) VBE(sat) ---- Collector-Emitter Saturation Voltage (I C=20mAdc, IB=2.0mAdc) 0.5 Vdc Base-Emitter Saturation Voltage (I C=20mAdc, IB=2.0mAdc) 0.9 Vdc SMALL-SIGNAL CHARACTERISTICS fT Ccb Current Gain-Bandwidth Product (I C=10mAdc, VCE=20Vdc, f=100MHz) Collector-Emitter Capacitance (VCB=20Vdec, IE=0, f=1.0MHz) 50 3.0 Max Unit Total Device Dissipation FR–5 Board,(1) TA = 25°C Derate above 25°C PD 225 mW 1.8 mW/°C Thermal Resistance, Junction to Ambient RJA 556 °C/W PD 300 mW 2.4 mW/°C RJA 417 °C/W TJ, Tstg –55 to +150 °C Thermal Resistance, Junction to Ambient Junction and Storage Temperature MAX .120 .098 .055 .041 .081 .024 .0039 .044 .007 .020 MM MIN 2.80 2.10 1.20 .89 1.78 .45 .013 .89 .085 .37 MAX 3.04 2.64 1.40 1.03 2.05 .60 .100 1.12 .180 .51 NOTE Suggested Solder Pad Layout .031 .800 pF Symbol Total Device Dissipation Alumina Substrate,(2) TA = 25°C Derate above 25°C INCHES MIN .110 .083 .047 .035 .070 .018 .0005 .035 .003 .015 MHz THERMAL CHARACTERISTICS Characteristic DIM A B C D E F G H J K .035 .900 .079 2.000 .037 .950 *Pulse Width ≤ 300µs, Duty Cycle ≤ 2.0% www.mccsemi.com .037 .950 inches mm MCC MMBTA42 120 100 hFE , DC CURRENT GAIN VCE = 10 Vdc TJ = +125°C 80 25°C 60 40 -55°C 20 0 0.1 1.0 10 100 IC, COLLECTOR CURRENT (mA) Figure 1. DC Current Gain f, T CURRENT-GAIN BANDWIDTH (MHz) 100 C, CAPACITANCE (pF) Ceb @ 1MHz 10 1.0 0.1 0.1 Ccb @ 1MHz 1.0 10 100 VR, REVERSE VOLTAGE (VOLTS) 1000 Figure 2. Capacitance 80 70 60 50 40 30 TJ = 25°C VCE = 20 V f = 20 MHz 20 10 1.0 2.0 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mA) 50 70 100 Figure 3. Current–Gain – Bandwidth 1.4 V, VOLTAGE (VOLTS) 1.2 VCE(sat) @ 25°C, IC/IB = 10 VCE(sat) @ 125°C, IC/IB = 10 VCE(sat) @ -55°C, IC/IB = 10 VBE(sat) @ 25°C, IC/IB = 10 1.0 0.8 VBE(sat) @ 125°C, IC/IB = 10 0.6 VBE(sat) @ -55°C, IC/IB = 10 VBE(on) @ 25°C, VCE = 10 V VBE(on) @ 125°C, VCE = 10 V VBE(on) @ -55°C, VCE = 10 V 0.4 0.2 0.0 0.1 1.0 10 IC, COLLECTOR CURRENT (mA) 100 Figure 4. ”ON” Voltages www.mccsemi.com