MITSUBISHI SEMICONDUCTOR 〈TRIAC〉 BCR25A, BCR25B MEDIUM POWER USE NON-INSULATED TYPE, GLASS PASSIVATION TYPE BCR25A, BCR25B OUTLINE DRAWING 17 Dimensions in mm (19.6) φ3.3 MIN φ1.3 MIN 8.0 8.5 1 3 (φ14) 3 M6×1.0 2 37 MAX 13 MAX 1.9 MAX 15.5 MAX 1 29 MAX 3.7 MIN 3 3 1 T1 TERMINAL BCR25A 2 T2 TERMINAL 3 GATE TERMINAL 39 MAX 30±0.2 26 MAX IT (RMS) ...................................................................... 25A VDRM ..............................................................400V/500V IFGT !, IRGT # ........................................................50mA IRGT ! ..................................................................... 75mA 2-φ4.2 MIN 8.0 28.5 MAX 2.5 MAX 3 APPLICATION Contactless AC switches, light dimmer, on/off control of copier lamps 3 37 MAX φ1.3 MIN 1 8.5 φ3.3 MIN 3 16 MAX • • • • 2 φ14.2 MAX 2 BCR25B MAXIMUM RATINGS Symbol Voltage class Parameter 8 10 Unit VDRM Repetitive peak off-state voltage ✽1 400 500 V VDSM Non-repetitive peak off-state voltage ✽1 600 600 V Symbol Conditions Parameter Ratings Unit 25 A 60Hz sinewave 1 full cycle, peak value, non-repetitive 250 A Value corresponding to 1 cycle of half wave 60Hz, surge on-state current 262 A2s Peak gate power dissipation 5.0 W Average gate power dissipation 0.5 W Peak gate voltage 10 V IGM Peak gate current 2.0 TI Junction temperature –20 ~ +125 Tstg Storage temperature –20 ~ +125 IT (RMS) RMS on-state current Commercial frequency, sine full wave, 360° conduction, Tc=92°C ITSM Surge on-state current I2t I2t for fusing PGM PG (AV) VGM — — Mounting torque Weight BCR25A only 30 2.94 BCR25A (Typical value) 18 BCR25B (Typical value) 23 A °C °C kg·cm N·m g ✽1. Gate open. Feb.1999 MITSUBISHI SEMICONDUCTOR 〈TRIAC〉 BCR25A, BCR25B MEDIUM POWER USE NON-INSULATED TYPE, GLASS PASSIVATION TYPE ELECTRICAL CHARACTERISTICS Symbol Limits Test conditions Parameter Min. Typ. Max. Unit IDRM Repetitive peak off-state current Tj=125°C, V DRM applied — — 5.0 mA VTM On-state voltage Tc=25°C, ITM=40A, Instantaneous measurement — — 1.6 V — — 3.0 V — — 3.0 V ! VFGT ! VRGT ! Gate trigger voltage ✽2 @ Tj=25°C, VD =6V, RL=6Ω, RG=330Ω VRGT # # — — 3.0 V IFGT ! ! — — 50 mA — — 75 mA — — 50 mA 0.2 — — V — — 1.0 °C/ W ✽3 — — V/µs IRGT ! Gate trigger current ✽2 @ Tj=25°C, VD =6V, RL=6Ω, RG=330Ω # IRGT # VGD Gate non-trigger voltage Tj=125°C, VD=1/2VDRM R th (j-c) Thermal resistance Junction to case (dv/dt) c Critical-rate of rise of off-state commutating voltage ✽2. Measurement using the gate trigger characteristics measurement circuit. ✽3. The critical-rate of rise of the off-state commutating voltage is shown in the table below. Voltage class VDRM (V) 8 (dv/dt) c Symbol Min. R — SUPPLY VOLTAGE 1. Junction temperature Tj =125°C 400 L 20 V/µs R 10 Commutating voltage and current waveforms (inductive load) Test conditions Unit — 2. Rate of decay of on-state commutating current (di/dt)c=–13.5A/ms 3. Peak off-state voltage VD =400V 500 L TIME MAIN CURRENT (di/dt)c TIME MAIN VOLTAGE TIME (dv/dt)c 20 VD PERFORMANCE CURVES 102 7 5 3 2 101 7 5 3 2 100 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6 4.0 4.4 ON-STATE VOLTAGE (V) RATED SURGE ON-STATE CURRENT 320 SURGE ON-STATE CURRENT (A) ON-STATE CURRENT (A) MAXIMUM ON-STATE CHARACTERISTICS 103 7 TC = 25°C 5 3 2 280 240 200 160 120 80 40 0 100 2 3 4 5 7 101 2 3 4 5 7 102 CONDUCTION TIME (CYCLES AT 60Hz) Feb.1999 MITSUBISHI SEMICONDUCTOR 〈TRIAC〉 BCR25A, BCR25B MEDIUM POWER USE GATE CHARACTERISTICS GATE VOLTAGE (V) 3 2 VGM = 10V PG(AV) = 0.5W PGM = 5.0W 101 7 5 VGT = 3.0V 3 2 IGM = 2A 100 7 5 3 2 IFGT I IRGT I VGD = 0.2V 10–1 IRGT III 7 5 101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104 GATE CURRENT (mA) GATE TRIGGER • CURRENT VOLTAGE (Tj = t°C) GATE TRIGGER • CURRENT VOLTAGE (Tj = 25°C) 100 (%) NON-INSULATED TYPE, GLASS PASSIVATION TYPE GATE TRIGGER CURRENT·VOLTAGE VS. JUNCTION TEMPERATURE 200 TEST PROCEDURE Ι, ΙΙ AND ΙΙΙ 180 160 GATE TRIGGER CURRENT 140 GATE TRIGGER VOLTAGE 120 100 80 60 40 20 0 –40 –20 0 20 40 60 80 100 120 140 160 JUNCTION TEMPERATURE (°C) 102 1.0 23 5 MAXIMUM ON-STATE POWER DISSIPATION 7 103 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 ON-STATE POWER DISSIPATION (W) TRANSIENT THERMAL IMPEDANCE (°C/W) MAXIMUM TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (JUNCTION TO CASE) 50 45 40 360° 35 CONDUCTION RESISTIVE, 30 INDUCTIVE 25 LOADS 20 15 10 5 0 CONDUCTION TIME (CYCLES AT 60Hz) CURVES APPLY REGARDLESS 140 OF CONDUCTION ANGLE AMBIENT TEMPERATURE (°C) CASE TEMPERATURE (°C) 160 120 100 80 60 16 20 24 5 10 15 20 25 30 35 40 RMS ON-STATE CURRENT (A) ALLOWABLE CASE TEMPERATURE VS. RMS ON-STATE CURRENT 360° 40 CONDUCTION RESISTIVE, 20 INDUCTIVE LOADS 0 4 8 12 0 0 28 RMS ON-STATE CURRENT (A) 32 ALLOWABLE AMBIENT TEMPERATURE VS. RMS ON-STATE CURRENT (BCR25A) 160 NATURAL CONVECTION 140 ALL FINS ARE BLACK PAINTED ALUMINUM AND GREASED 120 100 100 t3.0 100 120 120 t3.0 80 BX 20-06 60 40 WITHOUT 20 MICA PLATE WITH GREASE 0 4 8 12 16 0 20 24 28 32 RMS ON-STATE CURRENT (A) Feb.1999 MITSUBISHI SEMICONDUCTOR 〈TRIAC〉 BCR25A, BCR25B MEDIUM POWER USE 100 120 120 t3.0 80 160 160 t4.0 60 40 WITHOUT 20 MICA PLATE WITH GREASE 0 4 8 12 16 0 20 24 28 100 (%) BREAKOVER VOLTAGE VS. JUNCTION TEMPERATURE BREAKOVER VOLTAGE (Tj = t°C) BREAKOVER VOLTAGE (Tj = 25°C) ALLOWABLE AMBIENT TEMPERATURE VS. RMS ON-STATE CURRENT (BCR25B) 160 NATURAL CONVECTION 140 ALL FINS ARE BLACK PAINTED ALUMINUM AND GREASED 120 100 100 t3.0 32 160 TYPICAL EXAMPLE 140 III QUADRANT 120 100 I QUADRANT 80 60 40 20 0 0 20 40 60 80 100 120 140 160 COMMUTATION CHARACTERISTICS GATE TRIGGER CURRENT VS. GATE CURRENT PULSE WIDTH VOLTAGE WAVEFORM 3 TYPICAL t 2 EXAMPLE (dv/dt)C VD Tj = 125°C 102 7 IT = 4A, τ = 500µs CURRENT WAVEFORM 5 VD = 200V, f = 3Hz (di/dt)C IT 3 τ t 2 101 7 5 3 2 III QUADRANT 100 7 I QUADRANT 5 101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104 6Ω 3 TYPICAL A 2 EXAMPLE Tj = 25°C 103 6V 7 5 IRGT III 3 IRGT I 2 IFGT I 102 7 5 3 2 P.C JUNCTION TEMPERATURE (°C) 100 (%) RMS ON-STATE CURRENT (A) GATE TRIGGER CURRENT (tw) GATE TRIGGER CURRENT (DC) CRITICAL RATE OF RISE OF OFF-STATE COMMUTATING VOLTAGE (V/µs) AMBIENT TEMPERATURE (°C) NON-INSULATED TYPE, GLASS PASSIVATION TYPE tw 0.1s 101 7 5 100 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103 GATE CURRENT PULSE WIDTH (µs) RATE OF DECAY OF ON-STATE COMMUTATING CURRENT (A /ms) GATE TRIGGER CHARACTERISTICS TEST CIRCUITS 6Ω 6Ω A 6V A 6V RG V TEST PROCEDURE 1 V RG TEST PROCEDURE 2 6Ω A 6V V RG TEST PROCEDURE 3 Feb.1999