MITSUBISHI SEMICONDUCTOR GaAs FET FA01215 GaAs FET HYBRID IC DESCRIPTION FA01215 is RF Hybrid IC designed for 900MHz band 14.7 small size handheld radio. 14.2 0.6 2 3.5 Unit:mm 2 3.5 2 FEATURES • Low voltage 3.0V • High gain 24dB(typ.) • High efficiency 50% • High power 34.5dBm 6 APPLICATION 1 GSM IV 2.25 2 2.5 3 2.5 4 2.5 5 2.5 1.95 0.25±0.1 1 2 3 0.5±0.15 4 5 6 RF INPUT VG1,2 VD1 VD2 RF OUTPUT GND(FIN) ABSOLUTE MAXIMUM RATINGS Symbol VD Pin TC(op) Tstg Parameter Drain voltage Input power Operation case temperature. Storage temperature. Condition PO≤34.5dBm ZG=ZL=50Ω Ta 25˚C 25˚C – – Ratings Unit V dBm ˚C ˚C 4.5 15 -20 to +85 -30 to +90 Note: Each maximum ratings is guaranteed independently and P.W.=580µs,duty=1/8 operation. ELECTRICAL CHARACTERISTICS (Ta=25˚C) Symbol Parameter f PO ht Igt rin 2fo,3fo OSC.T VSWR.T Frequency Output power Total efficiency Total gate current Return loss 2nd harmonics, 3rd harmonics Stability Load VSWR tolerance Test conditions Note1 Note2 Note3 Note4 Note5 Limits Min Typ Max – 890 915 – 34.5 – 50 – – -3 – 0 – – -6 – – -30 – – -60 No degradation or destroy Unit MHz dBm % mA dB dBc dBc – Note1: Pin=13dBm,VD1=VD2=3.0V(Pulse: P.W.=580µs,duty=1/8),VG1,2=-2.0V,ZG=ZL=50Ω Note2: PO=34.5dBm(Pin controlled),VD1=VD2=3.0V(Pulse: P.W.=580µs,duty=1/8),VG1,2=-2.0V,ZG=ZL=50Ω Note3: PO=34.5dBm(Pin controlled),VD1=VD2=3.0V(DC),VG1,2=-2.0V,ZG=ZL=50Ω Note4: PO=0~34.5dBm(Pin controlled),VD1=VD2=3.0V(DC),VG1,2=-2.0V,ρL=3:1(all phase),ZG=50Ω Note5: PO=34.5dBm(Pin controlled),VD1=VD2=4.5V(Pulse:P.W.=580µs,duty=1/8),VG1,2=-2.0V,ρL=6:1(all phase),ZG=50Ω Nov. ´97 MITSUBISHI SEMICONDUCTOR GaAs FET FA01215 GaAs FET HYBRID IC TYPICAL CHARACTERISTICS (Ta=25˚C) 40 OUTPUT POWER, TOTAL EFFICIENCY vs INPUT POWER 90 VD=3.0V 35 VG=-2.0V f=902.5MHz 30 PO 80 70 25 60 20 ηT 15 50 40 10 30 5 20 0 10 -5 -30 -25 -20 -15 -10 -5 0 5 0 10 15 INPUT POWER Pin(dBm) EQUIVALENT CIRCUIT 1ST GATE 2ND GATE RF INPUT MATCHING CIRCUIT 2ND DRAIN 1ST DRAIN MATCHING CIRCUIT MATCHING CIRCUIT RF OUTPUT GND(FIN) Nov. ´97