E13418

Ultra-High Linearity DPDT Switch
CXM3645ER
Description
The CXM3645ER is a high power and ultra-high linearity DPDT switch for wireless communication systems.
The CXM3645ER can be used for SVLTE and carrier aggregation requiring very high linearity.
This IC has a 1.8 V CMOS compatible decoder.
The Sony GaAs junction gate pHEMT (JPHEMT) MMIC process is used for low insertion loss and high linearity.
(Application: LTE/CDMA/GSM/UMTS Handsets and mini base-stations )
Features
◆ Very Low Insertion loss: 0.23dB (Typ.) (Cellular Band )
0.35 dB (Typ.) (IMT2000 )
◆ Ultra-high linearity: IIP3 = 82dBm (Min.) for SVLTE
2f0 = -78dBm(Max) at Band13, Pin=25dBm
3f0 = -95dBm (Typ.) at Band17, Pin=25dBm
◆ Low voltage operation: VDD = 2.5 V
◆ No DC blocking capacitors required on RF ports
◆ 2 Control input
◆ Small package size: VQFN-18 pin (2.4 mm × 2.0 mm)
◆ Lead-Free and RoHS compliant
Structure
GaAs JPHEMT MMIC switch, CMOS decoder
Moisture Sensitivity
Moisture Sensitivity Level for this part is MSL= 2
Absolute Maximum Ratings
♦ Bias voltage
VDD
4
V
(Ta = 25 ˚C)
♦ Control voltage
Vctl
4
V
(Ta = 25 ˚C)
36
dBm
♦ Maximum input power
♦ Operating temperature
Topr
–35 to +90
˚C
♦ Storage temperature
Tstg
–65 to +150
˚C
(Duty cycle = 12.5 to 50 %, Ta = 25 ˚C)
This IC is ESD sensitive device. Special handling precautions are required.
1
CXM3645ER
Block Diagram
DPDT Antenna Switch
RF3
RF1
RF2
Decoder
Logic
RF4
MMIC Switch
VDD
CTL A/B
F1
RF1
RF3
F2
RF4
F3
RF2
F4
Truth Table
CTL A
CTL B
Active path
F1
F2
F3
F4
L
L
RF1-RF4
RF2-RF3
OFF
ON
OFF
ON
L
H
RF1-RF3
RF2-RF4
ON
OFF
ON
OFF
H
L
RF1-RF4
RF2,RF3 Off
OFF
ON
OFF
OFF
H
H
RF1-RF3
RF2,RF4 Off
ON
OFF
OFF
OFF
2
CXM3645ER
Pin Configuration
VQFN-18P PKG (2.4mm x 2.0mm)
18
GND
1
GND
CTLA
12
11
GND
2
3
DC Bias Condition
Parameter
Min.
Typ.
Max.
VDD
2.5
2.7
3.3
Vctl (H)
1.35
1.8
3.3
Vctl (L)
0
—
0.45
Unit
V
3
4
5
GND
17
RF4
CTLB
13
RF3
16
GND
GND
14
GND
15
GND
VDD
GND
(Top View)
10
GND
9
RF1
8
GND
7
RF2
6
GND
CXM3645ER
Target Electrical Characteristics
(Ta = 25 °C, VDD = 2.5 V, Vctl = 0/1.8 V)
Item
Symbol
Path
RF1-RF4
RF2-RF3
RF1-RF3
RF2-RF4
Insertion loss
IL
RF1-RF4
(RF2,RF3
Off)
RF1-RF3
(RF2,RF4
Off)
RF1-RF4
RF2-RF3
RF1-RF3
RF2-RF4
Isolation
ISO
RF2-RF3
(RF1-RF4
Active)
RF2-RF4
(RF1-RF3
Active)
VSWR
VSWR
All ports in
active paths
2fo
Condition
Min.
Typ.
Max.
*1, *2, *3, *7, *9
―
0.23
0.33
*4, *5, *8, *10
―
0.35
0.45
*6
―
0.47
0.62
*1, *2, *3, *7, *9
―
0.23
0.33
*4, *5, *8, *10
―
0.35
0.45
*6
―
0.47
0.62
*1, *2, *3, *7, *9
―
0.23
0.33
*4, *5, *8, *10
―
0.35
0.45
*6
―
0.47
0.62
*1, *2, *3, *7, *9
―
0.23
0.33
*4, *5, *8, *10
―
0.35
0.45
*6
―
0.47
0.62
*1, *2, *3, *7, *9
20
23
―
*4, *5, *8, *10
14
16.5
―
*6
12
14.5
―
*1, *2, *3, *7, *9
20
25
―
*4, *5, *8, *10
14
18.5
―
*6
12
16.5
―
*1, *2, *3, *7, *9
16
19
―
*4, *5, *8, *10
10
12.5
―
*6
8
10.5
―
*1, *2, *3, *7, *9
16
19
―
*4, *5, *8, *10
10
12.5
―
*6
8
10.5
―
700 to 2700 MHz
―
―
1.5
―
-60
-45
―
-61
-45
―
-58
-50
―
-68
-55
―
―
-60
―
―
-65
―
-81
-78
-95
-85
*7
3fo
2fo
3fo
Harmonics
2fo
3fo
*8
RF1-RF4, RF3
RF2-RF3, RF4
*3, *4, *6
2f0
*2
3f0
*1
4
Unit
dB
dB
dB
dB
―
dBm
CXM3645ER
Item
Symbol
Path
IMD2
Inter modulation
distortion in Rx
Band
IMD3
RF1-RF4, RF3
RF2-RF3, RF4
Condition
Min.
Typ.
Max.
Unit
*11, *12, *13, *16, *17, *20, *21, *24, *25
―
―
-110
*11, *14, *15, *18, *19, *22, *23, *26, *27
―
―
-110
*11, *28
―
―
-104
*11, *29
―
―
-110
*11, *30
―
―
-104
6.5
9.5
µs
20
µs
dBm
Switching speed
Ts
50 % Ctl to 90 % RF
―
Wakeup time
Twu
VDD = 2.5 V to 90 % RF, Pin = 0 dBm
―
Control current
Ictl
Vctl = 1.8 V
―
1
5
µA
Supply current
Idd
VDD = 2.7 V
―
0.15
0.35
mA
Electrical characteristics are measured with all RF ports terminated in 50 Ω.
*1
*2
*3
*4
*5
*6
*7
*8
*9
*10
*11
Pin = 25 dBm, 704 to 716 MHz
(Band 17)
Pin = 25 dBm, 777 to 787 MHz
(Band 13)
Pin = 26 dBm, 824 to 960 MHz
(Band 5, Band 8)
Pin = 26 dBm, 1710 to 1990 MHz (Band 1 Tx, Band 2 Tx, Band 3 Tx, Band 4 Tx)
Pin = 10 dBm, 2110 to 2170 MHz (Band 1 Rx, Band 4 Rx)
Pin = 26 dBm, 2500 to 2690 MHz (Band 7)
Pin = 35 dBm, 824 to 915 MHz
(GSM850/900 Tx)
Pin = 32 dBm, 1710 to 1910 MHz (GSM1800/1900 Tx)
Pin = 10 dBm, 869 to 960 MHz
(GSM850/900 Rx)
Pin = 10 dBm, 1805 to 1990 MHz (GSM1800/1900 Rx)
Measured with the recommended circuit.
5
CXM3645ER
IMD Condition (1)
Band
Band 1
Band 2
Band 5
Band 7
fRx
on RF
[MHz]
2140
1960
880
2655
fTx
+20 dBm
on RF3/RF4
[MHz]
fBlocker
–15 dBm
on RF1/RF2
[MHz]
1950
1880
835
2535
IMD condition
IMD2 (fRx – fTx)
190
*12
IMD2 (fRx + fTx)
4090
*13
IMD3 (2fTx – fRx)
1760
*14
IMD3 (2fTx + fRx)
6040
*15
IMD2 (fRx – fTx)
80
*16
IMD2 (fRx + fTx)
3840
*17
IMD3 (2fTx – fRx)
1800
*18
IMD3 (2fTx + fRx)
5720
*19
IMD2 (fRx – fTx)
45
*20
IMD2 (fRx + fTx)
1715
*21
IMD3 (2fTx – fRx)
790
*22
IMD3 (2fTx + fRx)
2550
*23
IMD2 (fRx – fTx)
120
*24
IMD2 (fRx + fTx)
5190
*25
IMD3 (2fTx – fRx)
2415
*26
IMD3 (2fTx + fRx)
7725
*27
IMD Condition (2)
Band
fRx
on RF
[MHz]
fTx
PTx = +23 dBm
on RF3/RF4
[MHz]
Band 13
747
786
IMD3 (2fTx – fRx)
825
*28
872
782
IMD3 (fTx + fRx)/2
827
*29
872
827
IMD3 (2fTx – fRx)
782
*30
BC0
fBlocker
PBlocker = +14 dBm
on RF1/RF2
[MHz]
6
IMD condition
CXM3645ER
Triple Beat Ratio
(VDD = 2.5 V, Ta = 25 °C)
Condition
Item
Triple
beat
ratio
Symbol
TBR
Path
RF1-RF4,
RF3
RF2-RF3,
RF4
Input
power
at RF3/
RF4
[dBm]
Tx1 at
RF3/
RF4
[MHz]
Tx2 at
RF3/
RF4
[MHz]
Jammer
at
RF1/RF2
–30 dBm
[MHz]
Triple beat
product
at RF
[MHz]
21.5
835.5
836.5
881.5
21.5
1880
1881
13.5
1732
1733
Min.
Typ.
Max.
881.5 ± 1
88
―
―
1960
1960 ± 1
88
―
―
2132
2132 ± 1
88
―
―
Unit
dBc
* Electrical characteristics are measured with all RF ports terminated in 50 Ω.
Measured with the recommended circuit.
IIP2
(VDD = 2.5 V, Ta = 25 °C)
Condition
Item
Input
IP2
Symbol
IIP2
Path
RF1-RF4,
RF3
RF2-RF3,
RF4
Tx at
RF3/RF4
24 dBm
[MHz]
Jammer at
RF1/RF2
–20 dBm
[MHz]
IM2 product at
RF
[MHz]
Min.
Typ.
Max.
836.61
1718.22
881.61
113.5
―
―
836.61
45
881.61
95.5
―
―
1885
3850
1965
95.5
―
―
1885
80
1965
95.5
―
―
1732.5
3865
2132.5
95.5
―
―
1732.5
400
2132.5
95.5
―
―
* Electrical characteristics are measured with all RF ports terminated in 50 Ω.
Measured with the recommended circuit.
7
Unit
dBm
CXM3645ER
Recommended Circuit
(Top View)
RF4
VDD
15
14
13
12
11
10
C2
16
C1
RF1 (ANT)
9
L1
CTLB
17
8
C1
CTLA
RF2 (ANT)
7
18
L1
1
2
3
4
5
6
RF3
*1 No DC blocking capacitors are required on all RF ports. (Except sourcing DC bias)
*2 The DC levels of all RF ports are GND.
*3 L1 (27nH) and C1(12pF) are recommended on Ant port for ESD protection.
*4 C2(100pF) is recommended on VDD pin for Decoupling Capacitor.
8
CXM3645ER
Recommended Land Pattern
9
CXM3645ER
Package Outline
(Unit: mm)
10
CXM3645ER
Tape and Reel Size
CXM3645ER-T9
11
CXM3645ER
Note
Sony reserves the right to change products and specifications without prior notice.
This information does not convey any license by any implication or otherwise under any patents or other right.
Application circuits shown, if any, are typical examples illustrating the operation of the devices. Sony cannot assume
responsibility for any problems arising out of the use of these circuits.
12
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