MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M54519P/FP 7-UNIT 400mA DARLINGTON TRANSISTOR ARRAY DESCRIPTION M54519P and M54519FP are seven-circuit Darlington transistor arrays. The circuits are made of NPN transistors. Both the semiconductor integrated circuits perform high-current driving with extremely low input-current supply. PIN CONFIGURATION INPUT FEATURES Á High breakdown voltage (BV CEO ≥ 40V) Á High-current driving (Ic(max) = 400mA) Á Driving available with PMOS IC output Á Wide operating temperature range (Ta = –20 to +75°C) IN1→ 1 16 →O1 IN2→ 2 15 →O2 IN3→ 3 14 →O3 IN4→ 4 13 →O4 OUTPUT IN5→ 5 12 →O5 IN6→ 6 11 →O6 IN7→ 7 10 →O7 GND 8 9 16P4(P) Package type 16P2N-A(FP) NC NC : No connection CIRCUIT DIAGRAM APPLICATION Drives of relays and printers, digit drives of indication elements (LEDs and lamps), and MOS-bipolar logic IC interfaces OUTPUT INPUT 20K 20K 2K GND FUNCTION The M54519P and M54519FP each have seven circuits consisting of NPN Darlington transistors. These ICs have resistance of 20kΩ between input transistor bases and input pins. The output transistor emitters are all connected to the GND pin (pin 8). Collector current is 400mA maximum. Collector-emitter supply voltage is 40V maximum. The M54519FP is enclosed in a molded small flat package, enabling space-saving design. ABSOLUTE MAXIMUM RATINGS Symbol The seven circuits share the GND. The diode, indicated with the dotted line, is parasitic, and cannot be used. Unit : Ω (Unless otherwise noted, Ta = –20 ~ +75 °C) Parameter Conditions VCEO Collector-emitter voltage Output, H IC VI Collector current Input voltage Current per circuit output, L Pd Topr Power dissipation Ta = 25°C, when mounted on board Tstg Operating temperature Storage temperature Ratings Unit –0.5 ~ +40 400 V mA –0.5 ~ +40 1.47(P)/1.00(FP) V W –20 ~ +75 –55 ~ +125 °C °C Aug. 1999 MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M54519P/FP 7-UNIT 400mA DARLINGTON TRANSISTOR ARRAY RECOMMENDED OPERATING CONDITIONS Symbol (Unless otherwise noted, Ta = –20 ~ +75°C) Limits Parameter VO Output voltage IC Collector current (Current per 1 circuit when 7 circuits are coming on simultaneously) Duty Cycle P : no more than 8% FP : no more than 6% Duty Cycle P : no more than 30% FP : no more than 25% IC ≤ 400mA “H” input voltage IC ≤ 200mA VIH VIL “L” input voltage min 0 typ — max 40 0 — 400 0 — 200 8 — 5 — — V mA 0 ELECTRICAL CHARACTERISTICS Unit 30 V 0.5 V (Unless otherwise noted, Ta = –20 ~ +75°C) Symbol Parameter V (BR) CEO Collector-emitter breakdown voltage VCE (sat) Collector-emitter saturation voltage II h FE Limits Test conditions Unit min typ+ max ICEO = 100µA VI = 8V, I C = 400mA 40 — — 1.3 — 2.4 — 1.0 1.6 Input current VI = 5V, I C = 200mA VI = 17V 0.3 0.8 1.8 mA DC amplification factor VCE = 4V, IC = 400mA, Ta = 25°C 1000 6000 — — V V + : The typical values are those measured under ambient temperature (Ta) of 25°C. There is no guarantee that these values are obtained under any conditions. SWITCHING CHARACTERISTICS (Unless otherwise noted, Ta = 25°C) Symbol ton toff Parameter Limits Test conditions Turn-on time Turn-off time CL = 15pF (note 1) min — typ 40 max — — 400 — Unit ns ns TIMING DIAGRAM NOTE 1 TEST CIRCUIT VO INPUT Measured device 50% 50% INPUT RL OUTPUT PG OUTPUT 50Ω CL 50% ton 50% toff (1) Pulse generator (PG) characteristics : PRR = 1kHz, tw = 10µs, tr = 6ns, tf = 6ns, ZO = 50Ω VP = 8VP-P (2) Input-output conditions : RL = 25Ω, VO = 10V (3) Electrostatic capacity CL includes floating capacitance at connections and input capacitance at probes Aug. 1999 MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M54519P/FP 7-UNIT 400mA DARLINGTON TRANSISTOR ARRAY TYPICAL CHARACTERISTICS Output Saturation Voltage Collector Current Characteristics Thermal Derating Factor Characteristics 400 VI = 5V Collector current Ic (mA) Power dissipation Pd (W) 2.0 M54519P 1.5 M54519FP 1.0 0.5 0 0 25 50 75 0 Ta = –20°C 0.5 1.0 1.5 2.0 Duty-Cycle-Collector Characteristics (M54519P) Duty-Cycle-Collector Characteristics (M54519P) 500 ➀ ➁ 300 200 •The collector current values represent the current per circuit. •Repeated frequency ≥ 10Hz •The value in the circle represents the value of the simultaneously-operated circuit. •Ta = 25°C 100 0 20 40 60 80 ➂ ➃ ➄ ➅ ➆ Collector current Ic (mA) Collector current Ic (mA) Ta = 25°C Output saturation voltage VCE (sat) (V) 400 ➀ 300 ➁ ➂ ➃ ➄ ➅ ➆ 200 •The collector current values represent the current per circuit. •Repeated frequency ≥ 10Hz •The value in the circle represents the value of the simultaneously-operated circuit. •Ta = 75°C 100 0 100 0 20 40 60 80 Duty cycle (%) Duty cycle (%) Duty-Cycle-Collector Characteristics (M54519FP) Duty-Cycle-Collector Characteristics (M54519FP) 100 500 ➀ 400 300 ➁ 200 •The collector current values represent the current per circuit. •Repeated frequency ≥ 10Hz •The value in the circle represents the value of the simultaneously-operated circuit. •Ta = 25°C 100 0 20 40 60 Duty cycle (%) 80 ➂ ➃ ➄ ➅ ➆ 100 Collector current Ic (mA) 500 Collector current Ic (mA) Ta = 75°C 100 Ambient temperature Ta (°C) 400 0 200 0 100 500 0 300 400 300 ➀ 200 ➁ ➂ ➃ ➄ ➅ ➆ •The collector current values represent the current per circuit. •Repeated frequency ≥ 10Hz •The value in the circle represents the value of the simultaneously-operated circuit. 100 0 0 20 40 60 •Ta = 75°C 80 100 Duty cycle (%) Aug. 1999 MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M54519P/FP 7-UNIT 400mA DARLINGTON TRANSISTOR ARRAY DC Amplification Factor Collector Current Characteristics Grounded Emitter Transfer Characteristics 104 VCE = 4V Ta = 75°C 5 3 Ta = 25°C 2 Ta = –20°C 103 7 5 3 Collector current Ic (mA) DC amplification factor hFE 400 VCE = 4V 7 Ta = 75°C Ta = –20°C 300 Ta = 25°C 200 100 2 102 1 10 2 3 5 7 102 2 5 7 103 3 Collector current Ic (mA) 0 0 1 2 3 4 Input voltage VI (V) Input Characteristics Input current II (mA) 2.0 1.5 1.0 Ta = –20°C Ta = 25°C 0.5 Ta = 75°C 0 0 5 10 15 20 Input voltage VI (V) Aug. 1999