MITSUBISHI SEMICONDUCTORS <TRANSISTOR ARRAY> M54522WP 8-UNIT 400mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE DESCRIPTION M54522WP is an eight-circuit Darlington transistor arrays with clamping diodes. The circuits are made of NPN transistors. Both the semiconductor integrated circuits perform high-current driving with extremely low input-current supply. PIN CONFIGURATION FEATURES ● High breakdown voltage (BVCEO > 40V) ● High-current driving (Ic(max) = 400mA) ● With clamping diodes ● Driving available with PMOS IC output INPUT APPLICATIONS Drives of relays and printers, digit drives of indication elements (LEDs and lamps), and interfaces between microcomputer output and high-current or high-voltage systems IN1→ 1 18 →O1 IN2→ 2 17 →O2 IN3→ 3 16 →O3 IN4→ 4 15 →O4 IN5→ 5 14 →O5 IN6→ 6 13 →O6 IN7→ 7 12 →O7 IN8→ 8 11 →O8 GND FUNCTION OUTPUT 10 →COM COMMON 9 Package type 18P4X The M54522WP each have eight circuits consisting of NPN Darlington transistors. This ICs have resistance of 20kΩ between input transistor bases and input pins. A spike-killer clamping diode is provided between each output pin (collector) and COM pin. The output transistor emitters are all connected to the GND pin (pin 9). The collector current is 400mA maximum. Collector-emitter supply voltage is 40V maximum. CIRCUIT DIAGRAM COM OUTPUT 20K INPUT 20K 2K GND The eight circuits share the COM and GND. The diode, indicated with the dotted line, is parasitic, and cannot be used. Unit:Ω ABSOLUTE MAXIMUM RATINGS (Unless otherwise noted, Ta = –20 ~ +75℃) Symbol VCEO IC VI IF VR Pd Topr Tstg Parameter Collector-emitter voltage Output current Input voltage Clamping diode forward current Clamping diode reverse voltage Power dissipation Operating temperature Storage temperature Conditions Output , H Current per circuit output, L Ta = 25℃, when mounted on board Ratings –0.5 ～ +40 400 –0.5 ～ +40 400 40 1.79 –20 ～ +75 –55 ～ +125 Unit V mA V mA V W ℃ ℃ Jul-2011 MITSUBISHI SEMICONDUCTORS <TRANSISTOR ARRAY> M54522WP 8-UNIT 400mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE RECOMMENDED OPERATING (Unless otherwise noted, Ta = –20 ~ +75℃) Symbol Parameter VO Output voltage IC Collector current (Current per 1 circuit when 8 circuits are coming on simultaneously) VIH “H” input voltage VIL “L” input voltage min Limits typ max 0 － 40 0 － 400 0 － 200 8 4 0 － － Duty Cycle no more than 7% Duty Cycle no more than 30% IC < 400mA IC < 200mA Unit V mA 30 V 0.5 V ELECTRICAL CHARACTERISTICS (Unless otherwise noted, Ta = －20～＋75℃） Symbol Parameter V (BR)CEO Collector-emitter breakdown voltage VCE(sat) Collector-emitter saturation voltage II VF IR hFE Input current Clamping diode forward voltage Clamping diode reverse current DC amplification factor min Limits typ＊ max ICEO = 100μA 40 — — Test conditions Unit V VI = 8V, IC = 400mA — 1.15 2.4 VI = 4V, IC = 200mA — 0.95 1.6 VI = 17V 0.3 0.85 1.8 mA IF = 400mA — 1.5 2.4 V VR = 40V — — 100 μA 1000 8000 — — VCE = 4V, IC = 300mA, Ta = 25℃ V *：The typical values are those measured under ambient temperature (Ta) of 25℃. There is no guarantee that these values are obtained under any conditions. SWITCHING CHARACTERISTICS (Unless otherwise noted, Ta = 25℃） Symbol ton toff Parameter Turn-on time Turn-off time Limits Test conditions min — — CL = 15pF（note 1） typ 30 930 Unit max — — ｎｓ ｎｓ TIMING DIAGRAM NOTE 1 TEST CIRCUIT INPUT VO INPUT RL Measured device 50% 50% OPEN OUTPUT PG 50Ω OUTPUT CL 50% ｔon 50% ｔoff (1) Pulse generator (PG) characteristics: PRR = 1kHz, tw = 10μs, tr = 6ns, tf = 6ns, ZO = 50Ω ,VI N= 0 to 8V (2) Input-output conditions : RL = 25Ω, VO = 10V (3) Electrostatic capacity CL includes floating capacitance at connections and input capacitance at probes Jul-2011 2 MITSUBISHI SEMICONDUCTORS <TRANSISTOR ARRAY> M54522WP 8-UNIT 400mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE TYPICAL CHARACTERISTICS Output Saturation Voltage Collector Current Characteristics Thermal Derating Factor Characteristics 500 2.0 VI=4V Collector current IC(mA) Power dissipation Pd(W) M54522WP 1.5 1.0 0.5 0 0 25 50 75 300 Ta=75℃ 200 Ta=25℃ Ta=-20℃ 100 0 100 0 0.5 2.0 500 ① ② 300 ③ 200 ④ ⑤ ⑥ ⑦ ⑧ •The collector current values represent the current per circuit. •Repeated frequency ≥10Hz •The value in the circle represents the value of the simultaneously-operated circuit. •Ta = 25℃ 100 0 20 40 60 Collector current IO(mA) 400 0 400 300 ② •The collector current values represent the current per circuit. •Repeated frequency ≥ 10Hz •The value in the circle represents the value of the simultaneously-operated circuit. •Ta = 75℃ 100 100 0 20 400 Collector current IO(mA) 3 2 10 4 Ta=75℃ 3 2 Ta=25℃ 7 5 100 VCE=4V VCE=4V 10 3 80 Grounded Emitter Transfer Characteristics 5 7 5 60 40 Duty cycle (%) DC Amplification Factor Collector Current Characteristics 7 5 ③ ④ ⑤ ⑥ ⑦ ⑧ 200 0 80 ① Duty cycle (%) DC amplification factor hFE 1.5 Duty-Cycle- Collector current Characteristics Duty-Cycle- Collector current Characteristics 500 10 1.0 Collector saturation voltage VCE(sat)(V) Ambient temperature Ta(℃) Collector current IO(mA) 400 Ta=-20℃ Ta=75℃ 300 Ta=25℃ Ta=-20℃ 200 100 3 2 10 2 0 10 2 3 5 7 10 1 2 3 5 7 10 2 2 3 5 7 0 10 3 Collector current IC(mA) 0 1 2 3 4 Input voltage VI(V) Jul-2011 3 MITSUBISHI SEMICONDUCTORS <TRANSISTOR ARRAY> M54522WP 8-UNIT 400mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE Input Characteristics Clamping Diode Characteristics 400 Forward bias current IF (mA) 2.0 Input current II(mA) 1.5 Ta=-20℃ 1.0 Ta=25℃ 0.5 0 Ta=75℃ 0 5 10 15 20 300 200 Ta=25℃ 100 Ta=75℃ 0 25 0 0.5 Ta=-20℃ 1.0 1.5 2.0 Forward bias voltage VF (V) Input voltage VI(V) Jul-2011 4 MITSUBISHI SEMICONDUCTORS <TRANSISTOR ARRAY> M54522WP 8-UNIT 400mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE PACKAGE OUTLINE Jul-2011 5