MITSUBISHI M68731H

MITSUBISHI RF POWER MODULE
M68731H
SILICON MOS FET POWER AMPLIFIER, 150-175MHz, 7W, FM PORTABLE RADIO
Dimensions in mm
OUTLINE DRAWING
BLOCK DIAGRAM
30±0.2
26.6±0.2
2
21.2±0.2
3
2-R1.5±0.1
1
4
5
5
1
2
3
4
0.45
6±1
PIN:
1 Pin : RF INPUT
2 VGG : GATE BIAS SUPPLY
3 VDD : DRAIN BIAS SUPPLY
4 PO : RF OUTPUT
5 GND: FIN
13.7±1
18.8±1
23.9±1
ABSOLUTE MAXIMUM RATINGS (Tc=25°C unless otherwise noted)
Symbol
VDD
VGG
Pin
PO
TC (OP)
Tstg
Parameter
Supply voltage
Gate bias voltage
Input power
Output power
Operation case temperature
Strage temperature
Conditions
VGG≤3.5V, ZG=ZL=50Ω
f=150-175MHz, ZG=ZL=50Ω
f=150-175MHz, ZG=ZL=50Ω
f=150-175MHz, ZG=ZL=50Ω
Ratings
9.2
4
70
10
-30 to +100
-40 to +110
Unit
V
V
mW
W
°C
°C
Note. Above parameters are guarateed independently.
ELECTRICAL CHARACTERISTICS (Tc=25°C,ZG=ZL=50Ω unless otherwise noted)
Symbol
f
PO
ηT
2fO
ρin
Parameter
Frequency range
Output power
Total efficiency
2nd. harmonic
Input VSWR
Test conditions
VDD=7.2V,
VGG=3.5V,
Pin=50W
Limits
Min
150
7
50
Max
175
-20
4
Unit
MHz
W
%
dBc
-
-
Stability
ZG=50Ω, VDD=4-9.2V,
Load VSWR<4:1
No parasitic oscillation
-
-
Load VSWR tolerance
VDD=9.2V, Pin=50mW,
PO=7W (VGG adjust), ZL=20:1
No degradation or
destroy
-
Note. Above parameters, ratings, limits and test conditions are subject to change.
Nov. ´97
MITSUBISHI RF POWER MODULE
M68731H
SILICON MOS FET POWER AMPLIFIER, 150-175MHz, 7W, FM PORTABLE RADIO
TYPICAL PERFORMANCE DATA
OUTPUT POWER, INPUT VSWR,
TOTAL EFFICIENCY VS. FREQUENCY
14
13 @VDD=7.2V
12 VGG=3.5V
Pin=50mW
11
PO
10
9
8
7
ηT
6
5
4
3
ρin
2
1
0
130
140
150
160
90
80
70
OUTPUT POWER, TOTAL EFFICENCY
VS. INPUT POWER
100
@VDD=7.2V
VGG=3.5V
f=150MHz
PO
10
60
ηT
50
40
1
10
30
170
20
180
0.1
0.01
FREQUENCY f (MHz)
80
10
8
1
100
60
ηT
6
40
2
30
0
3
4
5
6
7
100
@VDD=7.2V
Pin=50mW
f=150MHz
90
12
80
10
70
PO
8
PO
10
ηT
50
4
40
2
30
0
6
7
8
SUPPLY VOLTAGE VDD (V)
20
9
100
ηT
60
5
20
9
OUTPUT POWER, TOTAL EFFICIENCY
VS. GATE VOLTAGE
100
@f=175MHz
VGG=3.5V
Pin=50mW
4
8
SUPPLY VOLTAGE VDD (V)
16
3
50
4
OUTPUT POWER, TOTAL EFFICIENCY
VS. SUPPLY VOLTAGE
6
70
PO
INPUT POWER Pin (mW)
14
90
12
100
10
10
100
@f=150MHz
VGG=3.5V
Pin=50mW
14
1
1
1
100
10
16
ηT
0.1
1
OUTPUT POWER, TOTAL EFFICIENCY
VS. SUPPLY VOLTAGE
PO
10
0.1
INPUT POWER Pin (mW)
OUTPUT POWER, TOTAL EFFICENCY
VS. INPUT POWER
100
@VDD=7.2V
VGG=3.5V
f=175MHz
0.1
0.01
100
1
0.1
0.5
10
1
1.5
2
2.5
3
1
3.5
GATE VOLTAGE VGG (V)
Nov. ´97
MITSUBISHI RF POWER MODULE
M68731H
SILICON MOS FET POWER AMPLIFIER, 150-175MHz, 7W, FM PORTABLE RADIO
OUTPUT POWER, TOTAL EFFICIENCY
VS. GATE VOLTAGE
100
@VDD=7.2V
Pin=50mW
f=175MHz
PO
10
100
ηT
1
0.1
0.5
10
1
1.5
2
2.5
3
1
3.5
GATE VOLTAGE VGG (V)
Nov. ´97