MITSUBISHI RF POWER MODULE M68739M SILICON MOS FET POWER AMPLIFIER, 155-168MHz, 7W, FM PORTABLE RADIO Dimensions in mm OUTLINE DRAWING BLOCK DIAGRAM 30±0.2 2 3 26.6±0.2 21.2±0.2 2-R1.5±0.1 1 4 5 1 2 3 5 4 φ 0.45 6±1 13.7±1 PIN: 1 Pin : RF INPUT 2 VGG : GATE BIAS SUPPLY 3 VDD : DRAIN BIAS SUPPLY 4 PO : RF OUTPUT 5 GND: FIN 18.8±1 23.9±1 ABSOLUTE MAXIMUM RATINGS (Tc=25°C unless otherwise noted) Symbol VDD VGG Pin PO TC (OP) Tstg Parameter Supply voltage Gate bias voltage Input power Output power Operation case temperature Storage temperature Conditions VGG≤2.5V, ZG=ZL=50Ω f=155-168MHz, ZG=ZL=50Ω f=155-168MHz, ZG=ZL=50Ω f=155-168MHz, ZG=ZL=50Ω Ratings 16 3 30 10 -30 to +100 -40 to +110 Unit V V mW W °C °C Note. Above parameters are guaranteed independently. ELECTRICAL CHARACTERISTICS (Tc=25°C, ZG=ZL=50Ω unless otherwise noted) Symbol f PO ηT 2fO ρin Parameter Frequency range Output power Total efficiency 2nd. harmonic Input VSWR Test conditions VDD=9.6V, VGG=2.5V, Pin=20mW Limits Min 155 7 50 Max 168 -20 4 Unit MHz W % dBc - - Stability ZG=50Ω, VDD=4.8-13.2V, Load VSWR <4:1 No parasitic oscillation - - Load VSWR tolerance VDD=13.2V, Pin=20mW, PO=7W (VGG Adjust), ZL=20:1 No degradation or destroy - Note. Above parameters, ratings, limits and test conditions are subject to change. Nov. ´97