MITSUBISHI TRANSISTOR MODULES QM75TX-H HIGH POWER SWITCHING USE INSULATED TYPE QM75TX-H • • • • • IC Collector current .......................... 75A VCEX Collector-emitter voltage ........... 600V hFE DC current gain............................... 75 Insulated Type UL Recognized Yellow Card No. E80276 (N) File No. E80271 APPLICATION AC motor controllers, UPS, DC motor controllers, NC equipment, Welders OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm 68 (N) 20 74 W V U 18.5 18.5 B1 B3 B2 B4 U 86 62.5 10.5 B6 14 B5 B4 20 B3 B2 (P) B1 (10) 18.5 14 11–M4 B5 V P(+) W B6 N(–) 18.5 (10) 4–φ5.4 80 28.2 4 7 2 LABEL 24.8 26 94 13 13 Note: All Transistor Units are Darlingtons. Feb.1999 MITSUBISHI TRANSISTOR MODULES QM75TX-H HIGH POWER SWITCHING USE INSULATED TYPE ABSOLUTE MAXIMUM RATINGS Symbol (Tj=25°C, unless otherwise noted) Ratings Unit VCEX (SUS) Collector-emitter voltage IC=1A, VEB=2V Conditions 600 V VCEX Collector-emitter voltage VEB=2V 600 V VCBO Collector-base voltage Emitter open 600 V VEBO Emitter-base voltage Collector open 7 V IC Collector current DC 75 A –IC Collector reverse current DC (forward diode current) 75 A PC Collector dissipation TC=25°C 350 W IB Base current DC 4.5 A –ICSM Surge collector reverse current (forward diode current) Peak value of one cycle of 60Hz (half wave) 750 A Tj Junction temperature –40~+150 °C Tstg Storage temperature –40~+125 °C Viso Isolation voltage Parameter Charged part to case, AC for 1 minute Main terminal screw M4 — Mounting torque Mounting screw M5 — Typical value Weight ELECTRICAL CHARACTERISTICS 2500 V 0.98~1.47 N·m 10~15 kg·cm 1.47~1.96 N·m 15~20 kg·cm 520 g (Tj=25°C, unless otherwise noted) Limits Symbol Test conditions Parameter Min. Typ. Max. Unit ICEX Collector cutoff current VCE=600V, VEB=2V — — 1.0 mA ICBO Collector cutoff current VCB=600V, Emitter open — — 1.0 mA IEBO Emitter cutoff current VEB=7V — — 200 mA VCE (sat) Collector-emitter saturation voltage — — 2.0 V VBE (sat) Base-emitter saturation voltage — — 2.5 V –VCEO Collector-emitter reverse voltage –IC=75A (diode forward voltage) — — 1.85 V hFE DC current gain IC=75A, VCE=2V/5V 75/100 — — — — — 2.5 µs Switching time VCC=300V, IC=75A, IB1=–IB2=1.5A — — 12 µs — — 3.0 µs Transistor part (per 1/6 module) — — 0.35 °C/ W Diode part (per 1/6 module) — — 1.3 °C/ W Conductive grease applied (per 1/6 module) — — 0.2 °C/ W IC=75A, IB=1A ton ts tf Rth (j-c) Q Rth (j-c) R Rth (c-f) Thermal resistance (junction to case) Contact thermal resistance (case to fin) Feb.1999 MITSUBISHI TRANSISTOR MODULES QM75TX-H HIGH POWER SWITCHING USE INSULATED TYPE PERFORMANCE CURVES COMMON EMITTER OUTPUT CHARACTERISTICS (TYPICAL) DC CURRENT GAIN VS. COLLECTOR CURRENT (TYPICAL) 150 DC CURRENT GAIN hFE 2 IB=2.0A IB=1.5A IB=1.0A 100 IB=0.5A 50 0 Tj=25°C 0 1 2 3 4 COLLECTOR-EMITTER VOLTAGE 5 10 1 7 5 4 3 2 VCE=2.0V Tj=25°C 10 –1 1.0 1.4 1.8 2.2 2.6 BASE-EMITTER VOLTAGE 3.0 101 7 5 4 3 2 10 0 7 5 4 3 2 2 IC=75A IC=50A Tj=25°C IC=30A Tj=125°C 0 10 –2 2 3 4 5 7 10 –12 3 4 5 7 10 0 2 3 4 5 7 10 1 BASE CURRENT IB (A) VCE(sat) 10–1 10 1 IB=1A Tj=25°C Tj=125°C 2 3 4 5 7 10 2 2 3 4 5 7 10 3 SWITCHING TIME VS. COLLECTOR CURRENT (TYPICAL) ton, ts, tf (µs) 3 VBE(sat) COLLECTOR CURRENT IC (A) SWITCHING TIME COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) IC=100A 2 3 4 5 7 10 1 Tj=25°C Tj=125°C 2 3 4 5 7 10 2 SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) VBE (V) 5 1 VCE=2.0V 10 2 7 5 4 3 2 10 0 COLLECTOR-EMITTER SATURATION VOLTAGE (TYPICAL) 4 VCE=5.0V COLLECTOR CURRENT IC (A) VCE (sat), VBE (sat) (V) BASE CURRENT IB (A) COMMON EMITTER INPUT CHARACTERISTIC (TYPICAL) 10 0 7 5 4 3 2 10 3 7 5 4 3 2 VCE (V) SATURATION VOLTAGE COLLECTOR CURRENT IC (A) 200 10 2 7 5 3 2 10 1 7 5 3 2 VCC=300V IB1=–IB2=1.5A Tj=25°C Tj=125°C ts ton 10 0 7 tf 5 3 2 10 –1 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 2 3 4 5 7 10 3 COLLECTOR CURRENT IC (A) Feb.1999 MITSUBISHI TRANSISTOR MODULES QM75TX-H HIGH POWER SWITCHING USE INSULATED TYPE SWITCHING TIME VS. BASE CURRENT (TYPICAL) REVERSE BIAS SAFE OPERATING AREA 160 10 1 7 5 4 3 2 VCC=300V IC=75A IB1=1.5A ts COLLECTOR CURRENT IC (A) SWITCHING TIME ts, tf (µs) 2 tf 10 0 7 5 4 3 2 10 0 Tj=25°C Tj=125°C 2 3 45 7 10 1 2 3 45 7 140 100 IB2=–5A 80 60 40 20 Tj=125°C 0 10 2 BASE REVERSE CURRENT –IB2 (A) VCE (V) DERATING FACTOR OF F. B. S. O. A. C 50 0µ S S S 10 1 7 5 3 2 TC=25°C NON–REPETITIVE 10 0 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 2 3 4 5 7 10 3 80 70 60 50 COLLECTOR DISSIPATION 40 30 20 10 0 0 VCE (V) TRANSIENT THERMAL IMPEDANCE CHARACTERISTIC (TRANSISTOR) 10 0 2 3 45 7 10 1 2 3 0.5 0.4 0.3 0.2 0.1 0 10 –3 2 3 4 5 7 10 –2 2 3 4 5 710 –1 2 3 4 5 7 10 0 TIME (s) DERATING FACTOR (%) D m SECOND BREAKDOWN AREA 90 20 40 60 80 100 120 140 160 CASE TEMPERATURE COLLECTOR REVERSE CURRENT –IC (A) 10 1m COLLECTOR CURRENT IC (A) tw=50µS 100µS COLLECTOR-EMITTER VOLTAGE Zth (j–c) (°C/ W) 100 200 300 400 500 600 700 800 100 10 2 7 5 3 2 0 COLLECTOR-EMITTER VOLTAGE FORWARD BIAS SAFE OPERATING AREA 10 3 7 5 3 2 IB2=–2A 120 10 2 7 5 4 3 2 REVERSE COLLECTOR CURRENT VS. COLLECTOR-EMITTER REVERSE VOLTAGE (DIODE FORWARD CHARACTERISTICS) (TYPICAL) 10 1 7 5 4 3 2 10 0 TC (°C) Tj=25°C Tj=125°C 0 0.4 0.8 1.2 1.6 2.0 COLLECTOR-EMITTER REVERSE VOLTAGE –VCEO (V) Feb.1999 MITSUBISHI TRANSISTOR MODULES QM75TX-H HIGH POWER SWITCHING USE INSULATED TYPE REVERSE RECOVERY CHARACTERISTICS OF FREE-WHEEL DIODE (TYPICAL) 700 600 500 400 300 200 100 0 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 CONDUCTION TIME (CYCLES AT 60Hz) 10 2 7 5 4 3 2 10 1 VCC=300V IB1=–IB2=1.5A Tj=25°C Tj=125°C Irr Qrr 10 1 7 5 4 3 2 10 0 10 0 10 0 trr (µs) 800 Irr (A), Qrr (µc) SURGE COLLECTOR REVERSE CURRENT –ICSM (A) RATED SURGE COLLECTOR REVERSE CURRENT (DIODE FORWARD SURGE CURRENT) trr 2 3 4 5 7 10 1 10 –1 2 3 4 5 7 10 2 FORWARD CURRENT IF (A) TRANSIENT THERMAL IMPEDANCE CHARACTERISTIC (DIODE) 10 0 2 3 4 5 710 1 2 3 4 5 7 2.0 Zth (j–c) (°C/ W) 1.6 1.2 0.8 0.4 0 10 –3 2 3 4 5 710 –2 2 3 4 5 710 –1 2 3 4 5 7 10 0 TIME (s) Feb.1999