MOTOROLA MC33289

Freescale Semiconductor, Inc.
MOTOROLA
Document order number: MC33289/D
Rev 3.0, 05/2003
SEMICONDUCTOR TECHNICAL DATA
Advance Information
33289
Dual High-Side Switch
The 33289 is a dual high-side switch (DHSS) dedicated for use in
automotive and industrial applications. It is designed to drive typical inductive
loads such as solenoid valves.
DUAL HIGH-SIDE SWITCH
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This device consists of two independent 40 mΩ RDSON MOSFET channels
plus corresponding control circuitry in a surface mount package. The 33289
can be interfaced directly to a microcontroller for input control and monitoring
of diagnostic output.
Each switch offers independent protection and diagnosis during short
circuit, overvoltage, and undervoltage conditions, as well as an overtemperature shutdown feature. A logic low on the Open Load Detect Enable
pin (OLDE) minimizes bias current drain by disabling the open load circuitry
current source. The device also has a very low quiescent current in Standby
mode.
Features
• Designed to Drive Inductive Loads
• Operating Voltage Range from 6.0 V to 27 V
• Maximum Breakdown Voltage Greater Than 40 V
• Surface Mount Package
• 40 mΩ RDS(ON) at 25°C
• Overtemperature Protection with Hysteresis
• Short Circuit Protection
• Undervoltage Shutdown
• Overvoltage Shutdown
• Open Load Detection in Off-State
• Independent Diagnostic Output
• ESD Protection 2.0 kV with Standby Current > 5.0 µA at VBAT Below 14 V
DW SUFFIX
CASE 751D
20-LEAD SOICW
ORDERING INFORMATION
Device
Temperature
Range (TA)
Package
MC33289DW/R2
-40 to 125°C
20 SOICW
33289 Simplified Application Diagram
VPWR
5.0 V
VBAT
ST1
ST2
MCU
IN1
OUT1
OUT2
IN2
OLDE
GND
This document contains certain information on a new product.
Specifications and information herein are subject to change without notice.
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Battery
VBAT VBAT VBAT VBAT
VBAT VBAT VBAT VBAT
OUT2
OUT2
Load 2
Thermal
Sensor
5.0 V
Overtemperature
Status Pull-Up
Resistors
Charge
Pump
ST 2
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10 kΩ
10 kΩ
IN2
CHANNEL 2
OUT1
OUT2
Input
Trigger
IN1
MCU
OLDE
Undervoltage
& Overvoltage
Lockout
Open
Load
Over
Current
LOAD
ST 1
CHANNEL 1
GND
Figure 1. 33289 Simplified Block Diagram
33289
2
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VBAT
VBAT
OUT1
OUT1
VBAT
VBAT
NC
IN1
ST1
OLDE
1
20
2
19
3
18
4
17
5
16
6
15
7
14
8
13
9
12
10
11
VBAT
VBAT
OUT2
OUT2
VBAT
VBAT
NC
IN2
ST2
GND
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PIN FUNCTION DESCRIPTION
Pin
Pin Name
Formal Name
Definition
1, 2
VBAT
Voltage Supply (Battery)
These are the power supply pins of the device. These pins are directly connected with
the lead frame of the package and are tied to the drain of the switching MOSFET. These
pins can be directly connected to the battery voltage. In addition to their supply function,
these pins participate to the thermal behavior of the device in conducting the heat from
the switching MOSFET to the printed circuit board.
3, 4
OUT1
Output Channel 1
These pins are the output one terminals. They connect directly to the source of the
power MOSFET. These pins are used by the control circuitry to sense the device output
voltage. The RDS(ON) is 40 mΩ maximum per output at 25°C and will increase to a
maximum of 75 mΩ at 150°C junction temperature.
7, 14
NC
No Connect
8
IN1
Input Channel 1
These are the device input pins. They control their associated outputs. The levels are
CMOS compatible. When the input is a logic low, the associated output MOSFET is in
the OFF state. When input is high, the MOSFET is turned ON and the load is activated.
When both inputs are low, the device is in Standby mode and its supply current is
reduced. Each input pin has an internal active pull-down, so it will not float if
disconnected.
9
ST1
Status Channel 1
These pins are the channel one fault detection flags. Their internal structure is an open
drain architecture with an internal clamp at 6.0 V. An external pull-up resistor connected
to VDD (5.0 V) is required. This is an active low output. If the device is in its normal
condition the status lines will be high. If open load or other fault occurs, the associated
channel status flag will be pulled low. Please see Functional Truth Table.
10
OLDE
Open Load Detection
Enable
This pin is a digital input, enabling the open load current diagnostic circuitry. When
OLDE is a logic low, the open load circuitry is not powered and the bias current draw of
the device is at a minimum. If OLDE is a logic high, the open load circuitry is functional
at the price of a higher bias current draw. OLDE pin has a pull down resistor.
11
GND
Ground
12
ST2
Status Channel 2
These pins are the channel two fault detection flags. Their internal structure is an open
drain architecture with an internal clamp at 6V. An external pull up resistor connected to
Vdd (5.0 V) is needed. This is an active low output. If the device is in its normal condition
the status lines will be high. If open load or other fault occurs, the associated channel
status flag will be pulled low. Please, see Functional Truth Table, Table 1.
13
IN2
Input Channel 2
These are the device input pins. They control their associated outputs. The levels are
CMOS compatible. When the input is a logic low, the associated output MOSFET is in
the OFF state. When input is high, the MOSFET is turned ON and the load is activated.
When both inputs are low, the device is in Standby mode and its supply current is
reduced. Each input pin has an internal active pull down, so it will not float if
disconnected.
17, 18
OUT2
Output Channel 2
These pins are the output two terminals. They are connected to the source of the power
MOSFET. These pins are used by the control circuitry to sense the device output
voltage. The RDS(ON) is 40 mΩ maximum per output at 25°C and will increase to a
maximum of 75 mΩ at 150°C junction temperature.
5, 6
15, 16
19, 20
These pins do not connect.
Ground of the integrated circuit.
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MAXIMUM RATINGS
All voltages are with respect to ground unless otherwise noted.
Rating
Symbol
Value
Unit
VBAT and VBATC Voltage, Continuous/Pulse
VBAT
-0.3 to 41
V
OUT1, OUT2 Voltage with Respect to GND, Continuous/Pulse
VOUT
-4.0 to 41
V
OUT1, OUT2 to VBTAP Voltage, Continuous
VOUT
41
V
ST1, ST2 Voltage, Continuous/Pulse
VST
-0.3 to 7.0
V
IN1, IN2 Voltage, Continuous
VIN
-0.3 to 7.0
V
IN1, IN2, ST1, ST2, OLDE Current
IIN
±4.0
mA
Human Body Model (Note 1)
VESD1
±2000
Machine Model (Note 2)
VESD2
±200
TJ
-40 to 150
°C
Storage Temperature
TST
-55 to 150
°C
Thermal Resistance Junction-to-Ambient (Note 3)
RθJA
70
°C/W
Thermal Resistance Junction-to-Lead, Both Channels ON
RθJ1
15
°C/W
Thermal Resistance Junction-to-Lead, One Channel ON
RθJ2
15
°C/W
Thermal Resistance Junction-to-Lead, Logic Die
RθJ3
30
°C/W
TSOLDER
260
°C
V
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ESD Voltage
Operating Junction Temperature
Lead Soldering Temperature (Note 4)
Notes
1. ESD1 testing is performed in accordance with the Human Body Model (CZAP =100 pF, RZAP =1500 Ω).
2.
ESD2 testing is performed in accordance with the Machine Model (CZAP =200 pF, RZAP =0 Ω).
3.
4.
With minimum PCB dimensions
Lead soldering temperature limit is for 10 seconds maximum duration; not designed for immersion soldering; exceeding these limits may
cause malfunction or permanent damage to the device.
33289
4
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STATIC ELECTRICAL CHARACTERISTICS
Characteristics noted under conditions TJ from -40°C < TJ <150°C, 6.0 V < VBAT < 24 V, unless otherwise noted. Typical values
noted reflect the approximate parameter mean at TA = 25°C under nominal VBAT conditions at time fo device characterization.
Characteristic
Symbol
Min
Typ
Max
Unit
Operating Voltage
VBAT
6.0
—
VOV
V
Supply Current, Both Channels ON
IBAT1
—
6.0
16
—
5.0
10
—
—
5.0
POWER INPUT
VBAT = 13.5 V; OLDE High
mA
IBAT2
Supply Current, One Channel ON
VBAT = 13.5 V; OLDE High
IBAT3
Supply Current, Both Channels OFF
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mA
VBAT = 12.6 V; OLDE Low, TJ < 125°C
µA
mA
IBAT-MAX
Supply Current, Any State
VBAT = 13.5 V
—
Output OFF State Leakage Current per Channel
—
30
IDSS
µA
0.1
5.0
—
40
—
—
75
-4.0
—
-1.0
VIH
3.25
—
—
V
VOLDEH
3.5
—
—
V
VIL
—
—
1.5
V
VHYS
0.4
0.6
0.8
V
VBAT = 13.5 V; IN1, IN2, OLDE Low , Both Output Grounded TJ < 125°C
—
RDSON1
Drain-Source ON Resistance
VBAT > 10 V, TA = 25°C
mΩ
—
RDSON2
Drain-Source ON Resistance
VBAT > 10 V , TA = 150°C
mΩ
VCLAMP
Negative Inductive Clamp Voltage
IOUT = 1.0 A
V
INPUT CHARACTERISTICS
High Input Voltage (IN1, IN2)
High Input Voltage (OLDE)
Low Input Voltage (IN1, IN2, OLDE)
Logic Input Hysteresis (IN1, IN2)
IIN
Logic Input Current
µA
3.0
VIN = 1.5 V
—
—
—
32.5
5.5
—
7.0
—
—
80
—
—
0.5
—
—
10
—
—
80
µA
IIN
Logic Input Current
VIN = 3.25 V
—
VCLAMP
Logic Input Clamp Voltage
At IIN = 1.0 mA
V
pF
CIN
Input Capacitance IN1, IN2
RIN = 47 kΩ at 100 kHz
STATUS CHARACTERISTICS
VST
Status Voltage
IST = 1.0 mA, Output in Fault
V
ISTLK
Status Leakage Current
VST = 5.0 V
µA
CST
Status Pin Capacitance
VST = 5.0 V
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STATIC ELECTRICAL CHARACTERISTICS (continued)
Characteristics noted under conditions TJ from -40°C < TJ <150°C, 6.0 V < VBAT < 24 V, unless otherwise noted. Typical values
noted reflect the approximate parameter mean at TA = 25°C under nominal VBAT conditions at time fo device characterization.
Characteristic
Symbol
Min
Typ
Max
4.0
—
9.0
Unit
OVERLOAD PROTECTION CHARACTERISTICS
VBAT = 13.5 V
Thermal Shutdown
TSHUT
150
165
175
°C
Thermal Shutdown Hysteresis
THYS
—
—
10
°C
Overvoltage Shutdown Threshold
VOV
27
—
38
0.1
—
2.0
Both IN1, IN2 Logic High
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A
IOCT
Overcurrent Latchoff Threshold
V
VOVHYS
Overvoltage Shutdown Hysteresis
Both IN1, IN2 Logic High
V
V
VUV
Undervoltage Shutdown Threshold
Both IN1, IN2 Logic High
4.75
—
6.0
0.3
0.6
1.0
V
VUVHYS
Undervoltage Shutdown Hysteresis
Both IN1, IN2 Logic High
OPEN CIRCUIT DETECTION CHARACTERISTICS
Open Load Detect Current
µA
IOL
VOUT = 3.5 V, OLDE = 4.0 V
200
290
400
Open Load Threshold Voltage
VOL
1.5
2.4
3.5
V
Open Load Threshold Voltage
VINOL
1.5
2.5
3.5
V
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DYNAMIC ELECTRICAL CHARACTERISTICS
Characteristics noted under conditions TJ from -40°C < TJ <150°C, 6.0 V < VBAT < 24 V, unless otherwise noted. Typical values
noted reflect the approximate parameter mean at TA = 25°C under nominal VBAT conditions at time fo device characterization.
Characteristic
Symbol
Min
Typ
Max
1.0
—
2.0
0.1
—
3.0
1.0
—
20
1.0
2.5
15
1.0
5.0
15
—
—
100
Unit
SWITCHING CHARACTERISTICS (8.0 V < VBAT < 18 V, RLOAD = 7.0 Ω)
V/µs
SRPOUT1
Turn ON Slew Rate
From 10% to VBAT - 3.0 V
V/µs
SRPOUT2
Turn ON Slew Rate
From VBAT - 3.0 V to 90%
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V/µs
SMOUT
Turn OFF Slew Rate
From 90% to 10%
µs
tDON
Turn ON Delay Time
From VIN/2 to 10% VBAT
tDOFF
Turn OFF Delay Time
µs
From VIN/2 to 90% VBAT
OPEN CIRCUIT DETECTION CHARACTERISTICS
µs
tOLSTDT
Open Load to Status Low Delay Time
From IN = 1.5 to Status Flag < 1.5 V
µs
tOLDBT
Open Load Detect Blanking Time
3.0
From IN = 1.5 to Open Load Circuitry Enable
10
50
—
—
30
—
—
50
OVERLOAD PROTECTION CHARACTERISTICS
µs
TOCTDLY
Overcurrent Latchoff Delay
From Overcurrent Threshold Achieved to Output Voltage = 10% VBAT
µs
TOCTST-DLY
Overcurrent Latchoff Status Delay
From Output Voltage = 10% VBAT to Status Flag < 1.0 V
Table 1. Functional Truth Table
Conditions
IN1
IN2
OUT1
OUT2
ST1
ST2
Low Level
Low Level
Low Level
Low Level
High Level
High Level
High Level
Low Level
High Level
High Level
Low Level
High Level
High Level
Low Level
Low Level
High Level
High Level
High Level
High Level
High Level
High Level
High Level
High Level
High Level
Overtemperature Channel 1
High Level
Don’t Care
Low Level
Don’t Care
Low Level
High Level
Overtemperature Channel 2
Don’t Care
High Level
Don’t Care
Low Level
High Level
Low Level
Overtemperature Channel 1/Channel 2
High Level
High Level
Low Level
Low Level
Low Level
Low Level
Open Load Channel 1
Low Level
Don’t Care
Don’t Care
High Level
Don’t Care
Low Level
High Level
Low Level
Don’t Care
High Level
High Level
Low Level
Overcurrent Channel 1
High Level
Don’t Care
Low Level
Don’t Care
Low Level
High Level
Overcurrent Channel 2
Don’t Care
High Level
Don’t Care
Low Level
High Level
Low Level
Undervoltage Condition
Don’t Care
Don’t Care
Low Level
Low Level
High Level
High Level
Overvoltage Condition
Don’t Care
Don’t Care
Low Level
Low Level
High Level
High Level
Normal Operating Conditions
Open Load Channel 2
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DEVICE DESCRIPTION
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INTRODUCTION
The 33289 is a dual high-side switch with appropriate
control, protection, and diagnostic features dedicated to drive
inductive loads such as solenoid drivers for automotive and
industrial applications. The device consists of two independent
applications with two independent 40 mΩ power switches. It
can be linked directly with a microcontroller. It is available in a
SOICW 20 surface mount package.
Each output has a 40 mΩ RDSON maximum 25°C. The RDSON
value reaches 75 mΩ at 150°C junction temperature. Each
output has a parasitic drain to source diode, inherent to any
vertical MOSFET. This diode can sustain as much current at the
MOSFET. The diode is reversed biased during normal
operation of the MOSFET and is forward biased during reverse
battery, or negative transient pulses.
Power Supply
Status
The 33289 can be directly connected to the supply line. In
Standby mode (in-1 and in-2 at 0V), the supply current is less
than 5.0 µA for VBAT supply voltage below 14 V. This feature
allows a very low supply current on the battery, for example,
when an auto is idle or parked. During OFF state, the status
pins are in high impedance. In case of loss of (digital) ground,
the power MOSFETs turn OFF in order to safely tie the load
current to zero.
The device has an independent status pin per output,
reporting an overtemperature, overcurrent, and an open load
condition in the device. This pin is an open drain structure,
requiring an external pull-up resistor. The device incorporates
overtemperature sense on each output MOSFET in order to
independently protect each output.
Nominal Voltage and Transient Operation
The nominal operation voltage is from 6.0 to 26 V. The 33289
device is functional over a larger voltage range from 6.0 V to
27V. The technology used for both power and analog circuitry
sustains 40 V DC voltage.
Power Output Switches
The device has two independent high-side switches. Each
switch is realized with an N-channel power MOSFET and
includes current and temperature sensing circuitries. The
MOSFET gates are driven by analog circuitry which includes
charge pump and fault detection.
33289
8
Open Load Function
The open load detection is active during the OFF phase, or
cold open load detection. An amplifier measures the differential
voltage between VBAT and VOUT.
When the load current is below 400 mA, the open load
circuitry will pull down the status output. The open load circuitry
can be disabled with the OLDE to ensure very low standby
current.
Package
The device is assembled into a surface mount package.
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PACKAGE DIMENSIONS
DW SUFFIX
20-LEAD SOICW
PLASTIC PACKAGE
CASE 751D-06
ISSUE H
0.25
PIN'S
NUMBER
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B
M
A
10.55
10X
10.05
1
2.65
2.35
0.25
0.10
20X
20
0.49
0.35 6
0.25 M T A B
18X
PIN 1 INDEX
1.27
4
A
12.95
12.65
A
11
10
T
7.6
7.4
B
SEATING
PLANE
20X
0.1 T
5
0.75
0.25
X45°
0.32
0.23
1.0
0.4
SECTION A-A
MOTOROLA ANALOG INTEGRATED CIRCUIT DEVICE DATA
NOTES:
1. DIMENSIONS ARE IN MILLIMETERS.
2. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
3. DATUMS A AND B TO BE DETERMINED AT THE
PLANE WHERE THE BOTTOM OF THE LEADS EXIT
THE PLASTIC BODY.
4. THIS DIMENSION DOES NOT INCLUDE MOLD
FLASH, PROTRUSION OR GATE BURRS. MOLD
FLASH, PROTRUSION OR GATE BURRS SHALL NOT
EXCEED 0.15mm PER SIDE. THIS DIMENSION IS
DETERMINED ATTHE PLANE WHERE THE BOTTOM
OF THE LEADS EXIT THE PLASTIC BODY.
5. THIS DIMENSION DOES NOT INCLUDE INTER-LEAD
FLASH OR PROTRUSIONS. INTER-LEAD FLASH
AND PROTRUSIONS SHALL NOT EXCEED 0.25mm
PER SIDE. THIS DIMENSION IS DETERMINED AT
THE PLANE WHERE THE BOTTOM OF THE LEADS
EXIT THE PLASTIC BODY.
6. THIS DIMENSION DOES NOT INCLUDE DAMBAR
PROTRUSION. ALLOWABLE DAMBAR
PROTRUSION SHALL NOT CAUSE THE LEAD
WIDTH TO EXCEED 0.62mm.
7°
0°
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MC33289/D