MOTOROLA MJ16020

Order this document
by MJ16020/D
SEMICONDUCTOR TECHNICAL DATA
These transistors are designed for high–voltage, high–speed, power switching in
inductive circuits where fall time is critical. They are particularly suited for
line–operated switchmode applications. The MJ16022 is a selected high–gain version
of the MJ16020 for applications where drive current is limited.
Features:
NPN SILICON POWER
TRANSISTOR
30 AMPERES
450 VOLTS
• Fast Switching Times:
30 ns (Typ) Inductive Fall Time
50 ns (Typ) Inductive Crossover Time
800 ns (Typ) Inductive Storage Time
• 100_C Performance Specified for:
Reverse–Biased SOA with Inductive Loads
Switching Times with Inductive Loads
Saturation Voltages
Typical Applications:
•
•
•
•
•
CASE 197A–05
TO–204AE
Switching Regulators
Inverters
Solenoids and Relay Drivers
Motor Controls
Deflection Circuits
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ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Symbol
Max
Unit
Collector–Emitter Sustaining Voltage
VCEO
450
Vdc
Collector–Emitter Breakdown Voltage
VCEV
850
Vdc
Emitter–Base Voltage
VEB
6
Vdc
Collector Current — Continuous
— Peak (1)
IC
ICM
30
40
Adc
Base Current — Continuous
— Peak (1)
IB
IBM
20
30
Adc
Total Power Dissipation @ TC = 25_C
Derate above 25_C
PD
250
1.42
Watts
W/_C
TJ, Tstg
– 65 to 200
_C
Symbol
Max
Unit
RθJC
0.7
_C/W
TL
275
_C
Operating and Storage Temperature
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance — Junction to Case
Maximum Lead Temperature for Soldering Purposes:
1/8″ from Case for 5 Seconds
(1) Pulse Test: Pulse Width = 5 ms, Duty Cycle < 10%.
This document contains information on a new product. Specifications and information herein are subject to change without notice.
REV 7
 Motorola, Inc. 1995
Motorola Bipolar Power Transistor Device Data
1
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ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
VCEO(sus)
450
—
—
Vdc
ICER
—
—
—
mAdc
—
—
—
—
0.5
5
—
—
2
—
—
—
—
1.5
1.5
—
—
—
—
—
—
2.5
3
3
5
7
—
—
—
—
—
—
800
OFF CHARACTERISTICS*
Collector–Emitter Sustaining Voltage
(IC = 1 mA, I = 0)
Collector Cutoff Current
(VCE = 850 Vdc, RBE = 50 Ohms, TC = 100°C)
Collector Cutoff Current
(VCE = 850 Vdc, VEB(off) = 1.5 Vdc)
(VCE = 850 Vdc, VEB(off) = 1.5 Vdc)
ICES
@ TC = 25°C
@ TC = 100°C
Emitter Cutoff Current
(VEB = 6 Vdc, IC = 0)
IEBO
nAdc
nAdc
ON CHARACTERISTICS*
Base–Emitter Saturation Voltage
(IC = 20 Adc, IB = 2 Adc)
(IC = 20 Adc, IB = 2 Adc)
@ TC = 100°C
Collector–Emitter Saturation Voltage
(IC = 20 Adc, IB = 1.4 Adc)
(IC = 20 Adc, IB = 2.6 Adc)
(IC = 20 Adc, IB = 2.6 Adc)
@ TC = 25°C
@ TC = 25°C
@ TC = 100°C
DC Current Gain
(IC = 30 Adc, VCE = 5 Vdc)
VBE(sat)
Vdc
VCE(sat)
Vdc
hFE
MJ16020
MJ16022
—
DYNAMIC CHARACTERISTICS
Output Capacitance
(VCB = 10 Vdc, IE = 0, ftest = 1 MHz)
Cob
pF
* Indicates Pulse Test: Pulse Width = 300 µs Max, Duty Cycle = 2%.
2
Motorola Bipolar Power Transistor Device Data
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ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Delay Time
td
Rise Time
tr
—
20
—
ns
—
200
—
ts
—
1200
—
tf
—
200
—
ts
—
650
—
tf
—
80
—
tsv
—
800
2000
tfi
—
50
200
tc
—
90
250
tsv
—
1050
—
tfi
—
70
—
tc
—
120
—
td
—
20
—
tr
—
200
—
ts
—
900
—
tf
—
150
—
ts
—
500
—
tf
—
40
—
tsv
—
650
1700
tfi
—
30
150
SWITCHING CHARACTERISTICS: MJ16020
Resistive Load
Storage Time
Fall Time
Storage Time
(VCC = 250 Vdc,
IC = 20 Adc,
IB1 = 2.6 Adc,
tp = 30 µs,
Duty Cycle < 2%)
IB2 = 5.2 Adc
RB = 1.6 Ohm
(VBE(off) = 5 Vdc)
Fall Time
Inductive Load
Storage Time
Crossover Time
Fall Time
Storage Time
Crossover Time
Fall Time
(IC = 20 A, IB1 = 2.6 Adc,
VCE(pk) = 400 V,
VBE(off) = 5 Vdc)
(IC = 20 A, IB1 = 2.6 Adc,
VCE(pk) = 400 V,
VBE(off) = 5 Vdc)
(TC = 100°C)
(TC = 150°C)
ns
SWITCHING CHARACTERISTICS: MJ16022
Resistive Load
Delay Time
Rise Time
Storage Time
Fall Time
Storage Time
(VCC = 250 Vdc,
IC = 20 Adc,
IB1 = 2.6 Adc,
tp = 30 µs,
Duty Cycle < 2%)
IB2 = 5.2 Adc
RB = 1.6 Ohm
(VBE(off) = 5 Vdc)
Fall Time
ns
Inductive Load
Storage Time
Crossover Time
Fall Time
Storage Time
Crossover Time
Fall Time
(IC = 20 A, IB1 = 2.6 Adc,
VCE(pk) = 400 V,
VBE(off) = 5 Vdc)
(IC = 20 A, IB1 = 2.6 Adc,
VCE(pk) = 400 V,
VBE(off) = 5 Vdc)
Motorola Bipolar Power Transistor Device Data
(TC = 100°C)
(TC = 150°C)
tc
—
50
200
tsv
—
850
—
tfi
—
30
—
tc
—
70
—
ns
3
PACKAGE DIMENSIONS
A
N
C
–T–
E
D
K
2 PL
0.30 (0.012)
U
V
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
SEATING
PLANE
T Q
M
M
Y
M
–Y–
L
2
H
G
B
M
T Y
1
–Q–
0.25 (0.010)
M
DIM
A
B
C
D
E
G
H
K
L
N
Q
U
V
INCHES
MIN
MAX
1.530 REF
0.990
1.050
0.250
0.335
0.057
0.063
0.060
0.070
0.430 BSC
0.215 BSC
0.440
0.480
0.665 BSC
0.760
0.830
0.151
0.165
1.187 BSC
0.131
0.188
MILLIMETERS
MIN
MAX
38.86 REF
25.15
26.67
6.35
8.51
1.45
1.60
1.53
1.77
10.92 BSC
5.46 BSC
11.18
12.19
16.89 BSC
19.31
21.08
3.84
4.19
30.15 BSC
3.33
4.77
STYLE 1:
PIN 1. BASE
2. EMITTER
CASE: COLLECTOR
CASE 197A–05
TO–204AE
ISSUE J
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4
◊
Motorola Bipolar Power Transistor Device Data
*MJ16020/D*
MJ16020/D