MOTOROLA BUV22

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by BUV22/D
SEMICONDUCTOR TECHNICAL DATA
40 AMPERES
NPN SILICON
POWER
METAL TRANSISTOR
250 VOLTS
250 WATTS
. . . designed for high current, high speed, high power applications.
• High DC current gain: HFE min. = 20 at IC = 10 A
• Low VCE(sat): VCE(sat) max. = 1.0 V at IC = 10 A
• Very fast switching times:
TF max. = 0.35 µs at IC = 20 A
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CASE 197A–05
TO–204AE
(TO–3)
MAXIMUM RATINGS
Rating
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector–Emitter Voltage (VBE = –1.5 V)
Collector–Emitter Voltage (RBE = 100 Ω)
Symbol
Value
Unit
VCEO(sus)
VCBO
250
Vdc
300
Vdc
VEBO
VCEX
7
Vdc
300
Vdc
290
Vdc
40
50
Adc
Apk
VCER
IC
ICM
Collector–Current — Continuous
— Peak (pw
10 ms)
Base–Current continuous
Total Power Dissipation @ TC = 25_C
Operating and Storage Junction Temperature Range
IB
PD
TJ, Tstg
8
Adc
250
Watts
– 65 to 200
_C
Symbol
Max
Unit
θJC
0.7
_C/W
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
1.0
DERATING FACTOR
0.8
0.6
0.4
0.2
0
40
80
120
160
200
TC, TEMPERATURE (°C)
Figure 1. Power Derating
SWITCHMODE is a trademark of Motorola, Inc.
REV 7
 Motorola, Inc. 1995
Motorola Bipolar Power Transistor Device Data
1
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BUV22
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ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
Characteristic
Symbol
Min
VCEO(sus)
250
Max
Unit
OFF CHARACTERISTICS1
Collector–Emitter Sustaining Voltage
(IC = 200 mA, IB = 0, L = 25 mH)
Collector Cutoff Current at Reverse Bias
(VCE = 300 V, VBE = –1.5 V)
(VCE = 300 V, VBE = –1.5 V, TC = 125_C)
ICEX
Collector–Emitter Cutoff Current
(VCE = 200 V)
ICEO
Emitter–Base Reverse Voltage
(IE = 50 mA)
VEBO
Emitter–Cutoff Current
(VEB = 5 V)
IEBO
Vdc
mAdc
3.0
12.0
3.0
7
mAdc
V
1.0
mAdc
SECOND BREAKDOWN
Second Breakdown Collector Current with base forward biased
(VCE = 20 V, t = 1 s)
(VCE = 140 V, t = 1 s)
IS/b
Adc
12
0.15
ON CHARACTERISTICS1
DC Current Gain
(IC = 10 A, VCE = 4 V)
(IC = 20 A, VCE = 4 V)
hFE
20
10
Collector–Emitter Saturation Voltage
(IC = 10 A, IB = 1 A)
(IC = 20 A, IB = 2.5 A)
VCE(sat)
Base–Emitter Saturation Voltage
(IC = 40 A, IB = 4 A)
VBE(sat)
60
Vdc
1.0
1.5
1.5
Vdc
DYNAMIC CHARACTERISTICS
Current Gain — Bandwidth Product
(VCE = 15 V, IC = 2 A, f = 4 MHz)
fT
8.0
MHz
SWITCHING CHARACTERISTICS (Resistive Load)
Turn–on Time
Storage Time
(IC = 20 A, IB1 = IB2 = 2.5 A,
VCC = 100 V, RC = 5 Ω)
Fall Time
1Pulse Test: Pulse Width
2
300 µs, Duty Cycle
ton
0.8
ts
2.0
tf
0.35
µs
2%.
Motorola Bipolar Power Transistor Device Data
BUV22
There are two limitations on the power handling ability of a
transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC – VCE limits of
the transistor that must be observed for reliable operation
i.e., the transistor must not be subjected to greater dissipation than the curves indicate.
The data of Figure 2 is based on TC = 25_C; TJ(pk) is
variable depending on power level. Second breakdown
limitations do not derate the same as thermal limitations.
At high case temperatures, thermal limitations will reduce
the power that can handled to values less than the limitations
imposed by second breakdown.
IC, COLLECTOR CURRENT (A)
40
10
1
0.1
1
10
100
250
VCE, COLLECTOR–EMITTER VOLTAGE (V)
Figure 2. Active Region Safe Operating Area
2.0
50
IC/IB = 8
45
1.6
40
VCE = 5 V
V, VOLTAGE (V)
35
1.2
VBE
30
0.8
VCE
20
25
15
10
0.4
5
0
1
0
0.1
10
1
100
10
IC, COLLECTOR CURRENT (A)
IC, COLLECTOR CURRENT (A)
Figure 3. “On” Voltages
Figure 4. DC Current Gain
t, TIME ( µs)
VCC
3.0
2.0
104 µF
RC
1.0
tS
IB2
IB1
0.4
0.3
0.2
RB
ton
tF
VCC =
RC =
RB =
IB1 =
IC/IB =
100 V
5Ω
2.7 Ω
IB2
8
RC – RB: Non inductive resistances
4
8
12
16
20
24
IC, COLLECTOR CURRENT (A)
Figure 5. Resistive Switching Performance
Motorola Bipolar Power Transistor Device Data
Figure 6. Switching Times Test Circuit
3
BUV22
PACKAGE DIMENSIONS
A
N
C
–T–
E
D
K
2 PL
0.30 (0.012)
U
V
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
SEATING
PLANE
T Q
M
M
Y
M
–Y–
L
2
H
G
B
M
T Y
1
–Q–
0.25 (0.010)
M
DIM
A
B
C
D
E
G
H
K
L
N
Q
U
V
INCHES
MIN
MAX
1.530 REF
0.990
1.050
0.250
0.335
0.057
0.063
0.060
0.070
0.430 BSC
0.215 BSC
0.440
0.480
0.665 BSC
0.760
0.830
0.151
0.165
1.187 BSC
0.131
0.188
MILLIMETERS
MIN
MAX
38.86 REF
25.15
26.67
6.35
8.51
1.45
1.60
1.53
1.77
10.92 BSC
5.46 BSC
11.18
12.19
16.89 BSC
19.31
21.08
3.84
4.19
30.15 BSC
3.33
4.77
STYLE 1:
PIN 1. BASE
2. EMITTER
CASE: COLLECTOR
CASE 197A–05
TO–204AE (TO–3)
ISSUE J
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4
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Motorola Bipolar Power Transistor Device Data
*BUV22/D*
BUV22/D