ETC BUV21/D

ON Semiconductor
SWITCHMODE Series
NPN Silicon Power Transistor
BUV21
. . . designed for high speed, high current, high power applications.
40 AMPERES
NPN SILICON
POWER
METAL TRANSISTOR
200 VOLTS
250 WATTS
• High DC current gain:
•
•
hFE min. = 20 at IC = 12 A
Low VCE(sat), VCE(sat)
max. = 0.6 V at IC = 8 A
Very fast switching times:
TF max. = 0.4 µs at IC = 25 A
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MAXIMUM RATINGS
Rating
Symbol
Value
Unit
VCEO(sus)
200
Vdc
Collector–Base Voltage
VCBO
250
Vdc
Emitter–Base Voltage
VEBO
7
Vdc
Collector–Emitter Voltage (VBE = –1.5 V)
VCEX
250
Vdc
Collector–Emitter Voltage (RBE = 100 Ω)
VCER
240
Vdc
IC
ICM
40
50
Adc
Apk
Collector–Emitter Voltage
Collector–Current — Continuous
— Peak (PW 10 ms)
Base–Current continuous
IB
8
Adc
Total Power Dissipation @ TC = 25C
PD
250
Watts
TJ, Tstg
–65 to 200
C
Symbol
Max
Unit
θJC
0.7
C/W
Operating and Storage Junction
Temperature Range
CASE 197A–05
TO–204AE
(TO–3)
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
1.0
DERATING FACTOR
0.8
0.6
0.4
0.2
0
40
80
120
TC, TEMPERATURE (°C)
160
200
Figure 1. Power Derating
 Semiconductor Components Industries, LLC, 2001
May, 2001 – Rev. 9
1
Publication Order Number:
BUV21/D
BUV21
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ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted)
Characteristic
Symbol
Min
VCEO(sus)
200
Max
Unit
OFF CHARACTERISTICS1
Collector–Emitter Sustaining Voltage
(IC = 200 mA, IB = 0, L = 25 mH)
Collector Cutoff Current at Reverse Bias:
(VCE = 250 V, VBE = –1.5 V)
(VCE = 250 V, VBE = –1.5 V, TC = 125C)
ICEX
Collector–Emitter Cutoff Current
(VCE = 160 V)
ICEO
Emitter–Base Reverse Voltage
(IE = 50 mA)
VEBO
Emitter–Cutoff Current
(VEB = 5 V)
IEBO
Vdc
mAdc
3.0
12.0
3.0
7
mAdc
V
1.0
mAdc
SECOND BREAKDOWN
Second Breakdown Collector Current with base forward biased
(VCE = 20 V, t = 1 s)
(VCE = 140 V, t = 1 s)
IS/b
Adc
12
0.15
ON CHARACTERISTICS1
DC Current Gain
(IC = 12 A, VCE = 2 V)
(IC = 25 A, VCE = 4 V)
hFE
20
10
Collector–Emitter Saturation Voltage
(IC = 12 A, IB = 1.2 A)
(IC = 25 A, IB = 3 A)
VCE(sat)
Base–Emitter Saturation Voltage
(IC = 25 A, IB = 3 A)
VBE(sat)
60
Vdc
0.6
1.5
1.5
Vdc
DYNAMIC CHARACTERISTICS
Current Gain – Bandwidth Product
(VCE = 15 V, IC = 2 A, f = 4 MHz)
fT
8.0
MHz
SWITCHING CHARACTERISTICS (Resistive Load)
Turn-on Time
Storage Time
(IC = 25 A
A, IB1 = IB2 = 3 A,
A
VCC = 100 V, RC = 4 Ω)
Fall Time
1 Pulse
Test: Pulse Width 300 µs, Duty Cycle 2%.
http://onsemi.com
2
ton
1.0
ts
1.8
tf
0.4
µs
BUV21
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC – VCE
limits of the transistor that must be observed for reliable
operation i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 2 is based on TC = 25C, TJ(pk) is
variable depending on power level. Second breakdown
limitations do not derate the same as thermal limitations.
At high case temperatures, thermal limitations will reduce
the power that can be handled to values less than the
limitations imposed by second breakdown.
IC, COLLECTOR CURRENT (A)
40
10
1
0.1
1
10
100 200
VCE, COLLECTOR-EMITTER VOLTAGE (V)
Figure 2. Active Region Safe Operating Area
2.0
50
IC/IB = 8
VCE = 5 V
V, VOLTAGE (V)
1.6
40
1.2
30
VBE
0.8
20
0.4
10
VCE
0
1
0
100
10
IC, COLLECTOR CURRENT (A)
1
IC, COLLECTOR CURRENT (A)
Figure 3. “On” Voltages
t, TIME (s)
µ
10
Figure 4. DC Current Gain
VCE = 100 V
IC/IB1 = 8
IB1 = IB2
3.0
2.0
VCC
RC
1.0
IB2
tS
0.4
0.3
0.2
IB1
ton
RB
tF
0
5
10
15
IC, COLLECTOR CURRENT (A)
10,000 µF
20
VCC = 100 V
RC = 4 Ω
RB = 2.2 Ω
RC – RB: Non inductive resistances
25
Figure 5. Resistive Switching Performance
Figure 6. Switching Times Test Circuit
http://onsemi.com
3
BUV21
PACKAGE DIMENSIONS
TO–204 (TO–3)
CASE 197A–05
ISSUE J
A
N
C
–T–
E
D
U
SEATING
PLANE
K
2 PL
0.30 (0.012)
V
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
T Q
M
M
Y
DIM
A
B
C
D
E
G
H
K
L
N
Q
U
V
M
–Y–
L
2
H
G
B
M
T Y
1
INCHES
MIN
MAX
1.530 REF
0.990
1.050
0.250
0.335
0.057
0.063
0.060
0.070
0.430 BSC
0.215 BSC
0.440
0.480
0.665 BSC
0.760
0.830
0.151
0.165
1.187 BSC
0.131
0.188
MILLIMETERS
MIN
MAX
38.86 REF
25.15
26.67
6.35
8.51
1.45
1.60
1.53
1.77
10.92 BSC
5.46 BSC
11.18
12.19
16.89 BSC
19.31
21.08
3.84
4.19
30.15 BSC
3.33
4.77
–Q–
0.25 (0.010)
M
SWITCHMODE is a trademark of Semiconductor Components Industries, LLC.
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4
BUV21/D