NPN General Purpose Amplifier 3 • This device is designed for general purpose amplifier applications at collector currents to 300mA. • Sourced from process 10. 2 TO-92 1 1. Emitter 2. Base 3. Collector Mark: PN100/PN100A 1 SOT-23 1. Base 2. Emitter 3. Collector Mark: N1/N1A Absolute Maximum Ratings* TC=25°C unless otherwise noted Symbol VCEO Collector-Emitter Voltage Parameter Value 45 Units V VCBO VEBO Collector-Base Voltage 75 V Emitter-Base Voltage 6.0 IC Collector current V 500 mA TJ, Tstg Junction and Storage Temperature -55 ~ +150 °C - Continuous * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1. These ratings are based on a maximum junction temperature of 150 degrees C. 2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Electrical Characteristics TC=25°C unless otherwise noted Symbol Parameter Test Condition Min. Max. Units Off Characteristics BVCBO Collector-Base Breakdown Voltage IC = 10µA, IE = 0 75 V BVCEO Collector-Emitter Breakdown Voltage * IC = 1mA, IB = 0 45 V BVEBO Emitter-Base Breakdown Voltage IE = 10µA, IC = 0 6.0 ICBO Collector-Base Cutoff Current VCB = 60V 50 nA ICES Collector-Emiitter Cutoff Current VCE = 40V 50 nA IEBO Emitter Cutoff Current VEB = 4V 50 nA V On Characteristics hFE DC Current Gain IC = 100µA, VCE = 1.0V IC = 10mA, VCE = 1.0V IC = 100mA, VCE = 1.0V* IC = 150mA, VCE = 5.0V * 100 100A 100 100A 100 100A 80 240 100 300 100 100 100 450 600 350 VCE(sat) Collector-Emitter Saturation Voltage IC = 10mA, IB = 1.0mA IC = 200mA, IB = 20mA 0.2 0.4 V V VBE(sat) Base-Emitter Saturation Voltage IC = 10mA, IB = 1.0mA IC = 200mA, IB = 20mA 0.85 1.0 V V Small Signal Characteristics fT Current Gain Bandwidth Product VCE = 20V, IC = 20mA Cobo Output Capacitance VCB = 5.0V, f = 1.0MHz NF Noise Figure IC = 100µA, VCE = 5.0V RG = 2.0kΩ, f = 1.0KHz 250 100 100A MHz 4.5 pF 5.0 4.0 dB dB * Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2.0% ©2002 Fairchild Semiconductor Corporation Rev. B1, August 2006 PN100/PN100A/MMBT100/MMBT100A PN100/PN100A/MMBT100/MMBT100A Max. Symbol Parameter PN100 PN100A 625 5.0 PD Total Device Dissipation Derate above 25°C RθJC Thermal Resistance, Junction to Case 83.3 RθJA Thermal Resistance, Junction to Ambient 200 *MMBT100 *MMBT100A 350 2.8 Units mW mW/°C °C/W 357 °C/W * Device mounted on FR-4 PCB 1.6” × 1.6” × 0.06." ©2002 Fairchild Semiconductor Corporation Rev. B1, August 2006 PN100/PN100A/MMBT100/MMBT100A Thermal Characteristics TA=25°C unless otherwise noted 300 25 °C 200 - 40 °C 100 0 10 20 30 50 100 200 300 I C - COLLECTOR CURRENT (mA) 500 VCESAT- COLLECTOR-EMITTER VOLTAGE (V) Vce = 5V 125 °C Voltage vs Collector Current 0.4 β = 10 0.3 25 °C 0.2 125 °C 0.1 - 40 °C 1 Base-Emitter Saturation Voltage vs Collector Current Collector Current 1 0.8 - 40 °C 25 °C 0.6 125 °C 0.4 β = 10 0.2 0.1 1 10 100 I C - COLLECTOR CURRENT (mA) 300 1 - 40 °C 0.8 0.6 25 °C 125 °C 0.4 V CE = 5V 0.2 1 10 100 I C - COLLECTOR CURRENT (mA) 500 Figure 4. Base-Emitter On Voltage vs Collector Current 100 10 f = 1.0 MHz CAPACITANCE (pF) VCB = 60V 1 0.1 25 400 Figure 2. Collector-Emitter Saturation Voltage vs Collector Current Figure 3. Base-Emitter Saturation Voltage vs Collector Current I CBO - COLLE CTOR CURRENT (nA) 10 100 I C - COLLECTOR CURRENT (mA) Figure 1. Typical Pulsed Current Gain vs Collector Current VBEON - BASE-EMITTER ON VOLTAGE (V) VBESAT - COLLECTOR-EMITTER VOLTAGE (V) h FE - TYPICAL PULSED CURRENT GAIN vs Collector Current 400 50 75 100 125 TA - AMBIE NT TEMP ERATURE (° C) Figure 5. Collector Cutoff Current vs Ambient Temperature ©2002 Fairchild Semiconductor Corporation 150 10 Cib Cob 1 0.1 0.1 1 10 Vce - COLLECTOR VOLTAGE (V) 100 Figure 6. Input and Output Capacitance vs Reverse Voltag Rev. B1, August 2006 PN100/PN100A/MMBT100/MMBT100A Typical Characteristics (Continued) 300 P D - POWER DISSIPATION (mW) 700 270 ts 240 TIME (nS) 210 180 IB1 = IB2 = Ic / 10 V cc = 10 V 150 120 90 tf 60 30 0 10 tr td 20 30 50 100 200 I C - COLLECTOR CURRENT (mA) Figure 7. Switching Times vs Collector Current ©2002 Fairchild Semiconductor Corporation 300 600 500 TO-92 SOT-23 400 300 200 100 0 0 25 50 75 100 TEMPERATURE ( o C) 125 150 Figure 8. Power Dissipation vs Ambient Temperature Rev. B1, August 2006 PN100/PN100A/MMBT100/MMBT100A Typical Characteristics PN100/PN100A/MMBT100/MMBT100A Package Dimensions TO-92 +0.25 4.58 ±0.20 4.58 –0.15 ±0.10 14.47 ±0.40 0.46 1.27TYP [1.27 ±0.20] 1.27TYP [1.27 ±0.20] ±0.20 (0.25) +0.10 0.38 –0.05 1.02 ±0.10 3.86MAX 3.60 +0.10 0.38 –0.05 (R2.29) Dimensions in Millimeters ©2002 Fairchild Semiconductor Corporation Rev. B1, August 2006 PN100/PN100A/MMBT100/MMBT100A Package Dimensions (Continued) 1.30 ±0.10 0.40 ±0.03 2.40 ±0.10 0.45~0.60 0.20 MIN SOT-23 0.03~0.10 0.38 REF 0.40 ±0.03 +0.05 0.12 –0.023 0.96~1.14 0.97REF 2.90 ±0.10 0.95 ±0.03 0.95 ±0.03 1.90 ±0.03 0.508REF Dimensions in Millimeters ©2002 Fairchild Semiconductor Corporation Rev. B1, August 2006 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. FACT Quiet Series™ GlobalOptoisolator™ GTO™ HiSeC™ I2C™ i-Lo™ ImpliedDisconnect™ IntelliMAX™ ISOPLANAR™ LittleFET™ MICROCOUPLER™ MicroFET™ MicroPak™ MICROWIRE™ MSX™ MSXPro™ Across the board. Around the world.™ The Power Franchise® Programmable Active Droop™ ACEx™ ActiveArray™ Bottomless™ Build it Now™ CoolFET™ CROSSVOLT™ DOME™ EcoSPARK™ E2CMOS™ EnSigna™ FACT™ FAST® FASTr™ FPS™ FRFET™ OCX™ OCXPro™ OPTOLOGIC® OPTOPLANAR™ PACMAN™ POP™ Power247™ PowerEdge™ PowerSaver™ PowerTrench® QFET® QS™ QT Optoelectronics™ Quiet Series™ RapidConfigure™ RapidConnect™ μSerDes™ ScalarPump™ SILENT SWITCHER® SMART START™ SPM™ Stealth™ SuperFET™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TCM™ TinyBoost™ TinyBuck™ TinyPWM™ TinyPower™ TinyLogic® TINYOPTO™ TruTranslation™ UHC™ UniFET™ UltraFET® VCX™ Wire™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I20