ON Semiconductor General Purpose Transistors 2N4403 PNP Silicon ON Semiconductor Preferred Device MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO 40 Vdc Collector–Base Voltage VCBO 40 Vdc Emitter–Base Voltage VEBO 5.0 Vdc Collector Current — Continuous IC 600 mAdc Total Device Dissipation @ TA = 25°C Derate above 25°C PD 625 5.0 mW mW/°C Total Device Dissipation @ TC = 25°C Derate above 25°C PD 1.5 12 Watt mW/°C TJ, Tstg –55 to +150 °C Operating and Storage Junction Temperature Range 1 2 3 CASE 29–11, STYLE 1 TO–92 (TO–226AA) COLLECTOR 3 THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Ambient RJA 200 °C/W Thermal Resistance, Junction to Case RJC 83.3 °C/W 2 BASE 1 EMITTER ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit Collector–Emitter Breakdown Voltage(1) (IC = 1.0 mAdc, IB = 0) V(BR)CEO 40 — Vdc Collector–Base Breakdown Voltage (IC = 0.1 mAdc, IE = 0) V(BR)CBO 40 — Vdc Emitter–Base Breakdown Voltage (IE = 0.1 mAdc, IC = 0) V(BR)EBO 5.0 — Vdc Base Cutoff Current (VCE = 35 Vdc, VEB = 0.4 Vdc) IBEV — 0.1 µAdc Collector Cutoff Current (VCE = 35 Vdc, VEB = 0.4 Vdc) ICEX — 0.1 µAdc OFF CHARACTERISTICS 1. Pulse Test: Pulse Width ≤ 300 s, Duty Cycle ≤ 2.0%. Preferred devices are ON Semiconductor recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2001 June, 2001 – Rev. 0 1 Publication Order Number: 2N4403/D 2N4403 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued) Symbol Characteristic Min Max 30 60 100 100 20 — — — 300 — — — 0.4 0.75 0.75 — 0.95 1.3 200 — Unit ON CHARACTERISTICS DC Current Gain (IC = 0.1 mAdc, VCE = 1.0 Vdc) (IC = 1.0 mAdc, VCE = 1.0 Vdc) (IC = 10 mAdc, VCE = 1.0 Vdc) (IC = 150 mAdc, VCE = 2.0 Vdc)(1) (IC = 500 mAdc, VCE = 2.0 Vdc)(1) hFE — Collector–Emitter Saturation Voltage(1) (IC = 150 mAdc, IB = 15 mAdc) (IC = 500 mAdc, IB = 50 mAdc) VCE(sat) Base–Emitter Saturation Voltage(1) (IC = 150 mAdc, IB = 15 mAdc) (IC = 500 mAdc, IB = 50 mAdc) VBE(sat) Vdc Vdc SMALL–SIGNAL CHARACTERISTICS Current–Gain — Bandwidth Product (IC = 20 mAdc, VCE = 10 Vdc, f = 100 MHz) fT MHz Collector–Base Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) Ccb — 8.5 pF Emitter–Base Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) Ceb — 30 pF Input Impedance (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) hie 1.5 k 15 k Voltage Feedback Ratio (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) hre 0.1 8.0 Small–Signal Current Gain (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) hfe 60 500 Output Admittance (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) hoe 1.0 100 µmhos (VCC = 30 Vdc, VBE = +2.0 Vdc, IC = 150 mAdc, IB1 = 15 mAdc) td — 15 ns tr — 20 ns (VCC = 30 Vdc, IC = 150 mAdc, IB1 = 15 mA, IB2 = 15 mA) ts — 225 ns tf — 30 ns ohms X 10–4 — SWITCHING CHARACTERISTICS Delay Time Rise Time Storage Time Fall Time 1. Pulse Test: Pulse Width ≤ 300 s, Duty Cycle ≤ 2.0%. SWITCHING TIME EQUIVALENT TEST CIRCUIT -30 V -30 V +2 V 0 -16 V 200 Ω < 2 ns +14 V 0 1.0 kΩ 10 to 100 µs, DUTY CYCLE = 2% 200 Ω < 20 ns CS* < 10 pF -16 V 1.0 kΩ 1.0 to 100 µs, DUTY CYCLE = 2% +4.0 V Scope rise time < 4.0 ns *Total shunt capacitance of test jig connectors, and oscilloscope Figure 1. Turn–On Time Figure 2. Turn–Off Time http://onsemi.com 2 CS* < 10 pF 2N4403 TRANSIENT CHARACTERISTICS 25°C 100°C 30 Ceb VCC = 30 V IC/IB = 10 3.0 10 7.0 Ccb 5.0 2.0 Q, CHARGE (nC) CAPACITANCE (pF) 20 10 7.0 5.0 1.0 0.7 0.5 QT 0.3 QA 0.2 2.0 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 REVERSE VOLTAGE (VOLTS) 20 0.1 30 10 20 30 50 70 100 200 IC, COLLECTOR CURRENT (mA) Figure 3. Capacitances 100 IC/IB = 10 70 70 VCC = 30 V IC/IB = 10 50 50 20 t r , RISE TIME (ns) tr @ VCC = 30 V tr @ VCC = 10 V td @ VBE(off) = 2 V td @ VBE(off) = 0 30 30 20 10 10 7.0 7.0 10 20 30 50 70 100 200 300 5.0 500 10 20 30 50 70 100 200 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 5. Turn–On Time Figure 6. Rise Time 200 IC/IB = 10 t s′, STORAGE TIME (ns) t, TIME (ns) 500 Figure 4. Charge Data 100 5.0 300 100 IC/IB = 20 70 50 IB1 = IB2 ts′ = ts - 1/8 tf 30 20 10 20 30 50 70 100 200 IC, COLLECTOR CURRENT (mA) Figure 7. Storage Time http://onsemi.com 3 300 500 300 500 2N4403 SMALL–SIGNAL CHARACTERISTICS NOISE FIGURE VCE = –10 Vdc, TA = 25°C; Bandwidth = 1.0 Hz 10 10 8 8 NF, NOISE FIGURE (dB) NF, NOISE FIGURE (dB) f = 1 kHz IC = 1.0 mA, RS = 430 Ω IC = 500 µA, RS = 560 Ω IC = 50 µA, RS = 2.7 kΩ IC = 100 µA, RS = 1.6 kΩ 6 4 2 6 4 2 RS = OPTIMUM SOURCE RESISTANCE 0 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 IC = 50 µA 100 µA 500 µA 1.0 mA 0 100 50 100 200 f, FREQUENCY (kHz) Figure 8. Frequency Effects 500 1k 2k 5k 10k 20k RS, SOURCE RESISTANCE (OHMS) 50k Figure 9. Source Resistance Effects h PARAMETERS VCE = –10 Vdc, f = 1.0 kHz, TA = 25°C This group of graphs illustrates the relationship between hfe and other “h” parameters for this series of transistors. To obtain these curves, a high–gain and a low–gain unit were selected from the 2N4403 lines, and the same units were used to develop the correspondingly–numbered curves on each graph. 100k 700 50k hie , INPUT IMPEDANCE (OHMS) 1000 hfe , CURRENT GAIN 500 300 200 2N4403 UNIT 1 2N4403 UNIT 2 100 70 50 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 10k 5k 2k 1k 500 100 5.0 7.0 10 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 IC, COLLECTOR CURRENT (mAdc) IC, COLLECTOR CURRENT (mAdc) Figure 10. Current Gain Figure 11. Input Impedance 20 5.0 7.0 10 500 10 2N4403 UNIT 1 2N4403 UNIT 2 5.0 2.0 1.0 0.5 0.2 0.1 20k 200 hoe, OUTPUT ADMITTANCE ( mhos) h re , VOLTAGE FEEDBACK RATIO (X 10-4 ) 30 2N4403 UNIT 1 2N4403 UNIT 2 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 100 50 20 10 2.0 1.0 0.1 5.0 7.0 10 2N4403 UNIT 1 2N4403 UNIT 2 5.0 IC, COLLECTOR CURRENT (mAdc) 0.2 0.3 0.5 0.7 1.0 2.0 3.0 IC, COLLECTOR CURRENT (mAdc) Figure 12. Voltage Feedback Ratio Figure 13. Output Admittance http://onsemi.com 4 5.0 7.0 10 2N4403 STATIC CHARACTERISTICS h FE, NORMALIZED CURRENT GAIN 3.0 VCE = 1.0 V VCE = 10 V 2.0 TJ = 125°C 25°C 1.0 -55°C 0.7 0.5 0.3 0.2 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 IC, COLLECTOR CURRENT (mA) 30 50 70 100 200 300 500 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 14. DC Current Gain 1.0 0.8 0.6 IC = 1.0 mA 10 mA 100 mA 500 mA 0.4 0.2 0 0.005 0.01 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 IB, BASE CURRENT (mA) 2.0 3.0 5.0 7.0 10 20 30 50 Figure 15. Collector Saturation Region 0.5 TJ = 25°C 0.8 VBE(sat) @ IC/IB = 10 0.6 VBE(sat) @ VCE = 10 V 0 COEFFICIENT (mV/ °C) VOLTAGE (VOLTS) 1.0 0.4 0.2 0.1 0.2 0.5 0.5 1.0 1.5 2.0 VCE(sat) @ IC/IB = 10 0 VC for VCE(sat) 50 100 200 1.0 2.0 5.0 10 20 IC, COLLECTOR CURRENT (mA) 2.5 0.1 0.2 500 Figure 16. “On” Voltages VS for VBE 0.5 50 100 200 1.0 2.0 5.0 10 20 IC, COLLECTOR CURRENT (mA) Figure 17. Temperature Coefficients http://onsemi.com 5 500 2N4403 PACKAGE DIMENSIONS TO–92 (TO–226) CASE 29–11 ISSUE AL A NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. B R P L SEATING PLANE K DIM A B C D G H J K L N P R V D X X G J H V C SECTION X–X 1 N N TYLE 1: PIN 1. EMITTER 2. BASE 3. COLLECTOR http://onsemi.com 6 INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.021 0.045 0.055 0.095 0.105 0.015 0.020 0.500 --0.250 --0.080 0.105 --0.100 0.115 --0.135 --- MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.407 0.533 1.15 1.39 2.42 2.66 0.39 0.50 12.70 --6.35 --2.04 2.66 --2.54 2.93 --3.43 --- 2N4403 Notes http://onsemi.com 7 2N4403 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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