SAMSUNG M464S1724DTS-L7A

M464S1724DTS
PC133/PC100 SODIMM
M464S1724DTS SDRAM SODIMM
16Mx64 SDRAM SODIMM based on 8Mx16,4Banks,4K Refresh,3.3V Synchronous DRAMs with SPD
GENERAL DESCRIPTION
FEATURE
The Samsung M464S1724DTS is a 16M bit x 64 Synchronous
• Performance range
Dynamic RAM high density memory module. The Samsung
M464S1724DTS consists of eight CMOS 8M x 16 bit with
4banks Synchronous DRAMs in TSOP-II 400mil package and a
2K EEPROM in 8-pin TSSOP package on a 144-pin glass-epoxy
substrate. Three 0.1uF decoupling capacitors are mounted on
the printed circuit board in parallel for each SDRAM. The
M464S1724DTS is a Small Outline Dual In-line Memory Module
Part No.
Max Freq. (Speed)
M464S1724DTS-L7C/C7C
M464S1724DTS-L7A/C7A
133MHz (7.5ns @ CL=2)
133MHz (7.5ns @ CL=3)
M464S1724DTS-L1H/C1H
100MHz (10ns @ CL=2)
M464S1724DTS-L1L/C1L
100MHz (10ns @ CL=3)
•
•
•
•
•
Burst mode operation
Auto & self refresh capability (4096 Cycles/64ms)
LVTTL compatible inputs and outputs
Single 3.3V ± 0.3V power supply
MRS cycle with address key programs
Latency (Access from column address)
Burst length (1, 2, 4, 8 & Full page)
Data scramble (Sequential & Interleave)
• All inputs are sampled at the positive going edge of the
system clock
• Serial presence detect with EEPROM
• PCB : Height (1,250mil) , double sided component
and is intended for mounting into 144-pin edge connector sockets.
Synchronous design allows precise cycle control with the use of
system clock. I/O transactions are possible on every clock cycle.
Range of operating frequencies, programmable latencies allows
the same device to be useful for a variety of high bandwidth,
high performance memory system applications.
PIN CONFIGURATIONS (Front side/back side)
Pin
Front
Pin
Back
Pin
Front
Pin
Back
1
3
5
7
9
11
13
15
17
19
21
23
25
27
29
31
33
35
37
39
41
43
45
47
49
V SS
DQ0
DQ1
DQ2
DQ3
V DD
DQ4
DQ5
DQ6
DQ7
V SS
DQM0
DQM1
V DD
A0
A1
A2
V SS
DQ8
DQ9
DQ10
DQ11
V DD
DQ12
DQ13
2
4
6
8
10
12
14
16
18
20
22
24
26
28
30
32
34
36
38
40
42
44
46
48
50
V SS
DQ32
DQ33
DQ34
DQ35
V DD
DQ36
DQ37
DQ38
DQ39
V SS
DQM4
DQM5
V DD
A3
A4
A5
V SS
DQ40
DQ41
DQ42
DQ43
V DD
DQ44
DQ45
51
53
55
57
59
DQ14
DQ15
V SS
NC
NC
52
54
56
58
60
DQ46
DQ47
V SS
NC
NC
61
63
65
67
69
71
73
75
77
79
81
83
85
87
89
91
93
Pin
95
97
99
101
103
105
107
Voltage Key
109
CLK0 62 CKE0 111
V DD
64
V DD 113
RAS
66
CAS 115
WE
68 CKE1 117
CS0
70
*A12 119
CS1
72
*A13 121
DU
74 CLK1 123
V SS
76
V SS 125
NC
78
NC
127
NC
80
NC
129
V DD
82
V DD 131
DQ16 84 DQ48 133
DQ17 86 DQ49 135
DQ18 88 DQ50 137
DQ19 90 DQ51 139
V SS
92
V SS 141
DQ20 94 DQ52 143
Front
DQ21
DQ22
DQ23
V DD
A6
A8
V SS
A9
A10/AP
V DD
DQM2
DQM3
V SS
DQ24
DQ25
DQ26
DQ27
V DD
DQ28
DQ29
DQ30
DQ31
V SS
**SDA
V DD
PIN NAMES
Pin
Back
96 DQ53
98 DQ54
100 DQ55
102 V DD
104
A7
106 BA0
108 V SS
110 BA1
112 A11
114 V DD
116 DQM6
118 DQM7
120 V SS
122 DQ56
124 DQ57
126 DQ58
128 DQ59
130 V DD
132 DQ60
134 DQ61
136 DQ62
138 DQ63
140 V SS
142 **SCL
144 V DD
Pin Name
Function
A0 ~ A11
Address input (Multiplexed)
BA0 ~ BA1
Select bank
DQ0 ~ DQ63
Data input/output
CLK0 ~ CLK1
Clock input
CKE0 ~ CKE1
Clock enable input
CS0 ~ CS1
Chip select input
RAS
Row address strobe
CAS
Column address strobe
WE
Write enable
DQM0 ~ 7
DQM
V DD
Power supply (3.3V)
V SS
Ground
SDA
Serial data I/O
SCL
Serial clock
DU
Don′t use
NC
No connection
* These pins are not used in this module.
** These pins should be NC in the system
which does not support SPD.
* SAMSUNG ELECTRONICS CO., Ltd. reserves the right to change products and specifications without notice.
Rev. 0.1 Sept. 2001
M464S1724DTS
PC133/PC100 SODIMM
PIN CONFIGURATION DESCRIPTION
Pin
Name
Input Function
CLK
System clock
Active on the positive going edge to sample all inputs.
CS
Chip select
Disables or enables device operation by masking or enabling all inputs except
CLK, CKE and DQM
CKE
Clock enable
Masks system clock to freeze operation from the next clock cycle.
CKE should be enabled at least one cycle prior to new command.
Disable input buffers for power down in standby.
CKE should be enabled 1CLK+t SS prior to valid command.
A0 ~ A11
Address
Row/column addresses are multiplexed on the same pins.
Row address : RA0 ~ RA11, Column address : CA0 ~ CA8
BA0 ~ BA1
Bank select address
Selects bank to be activated during row address latch time.
Selects bank for read/write during column address latch time.
RAS
Row address strobe
Latches row addresses on the positive going edge of the CLK with RAS low.
Enables row access & precharge.
CAS
Column address strobe
Latches column addresses on the positive going edge of the CLK with CAS low.
Enables column access.
WE
Write enable
Enables write operation and row precharge.
Latches data in starting from CAS, WE active.
DQM0 ~ 7
Data input/output mask
Makes data output Hi-Z, t SHZ after the clock and masks the output.
Blocks data input when DQM active. (Byte masking)
D Q0 ~
Data input/output
Data inputs/outputs are multiplexed on the same pins.
Power supply/ground
Power and ground for the input buffers and the core logic.
63
V DD /VSS
Rev. 0.1 Sept. 2001
M464S1724DTS
PC133/PC100 SODIMM
FUNCTIONAL BLOCK DIAGRAM
CS1
CS0
DQM0
DQM4
LDQM
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
CS
LDQM
U0
UDQM
DQ8
DQ9
DQ10
DQ11
DQ12
DQ13
DQ14
DQ15
DQM1
DQ8
DQ9
DQ10
DQ11
DQ12
DQ13
DQ14
DQ15
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
CS
U4
UDQM
DQ8
DQ9
DQ10
DQ11
DQ12
DQ13
DQ14
DQ15
LDQM
DQ32
DQ33
DQ34
DQ35
DQ36
DQ37
DQ38
DQ39
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
DQM5
DQ40
DQ41
DQ42
DQ43
DQ44
DQ45
DQ46
DQ47
UDQM
DQ8
DQ9
DQ10
DQ11
DQ12
DQ13
DQ14
DQ15
CS
LDQM
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
U2
CS
U6
UDQM
DQ8
DQ9
DQ10
DQ11
DQ12
DQ13
DQ14
DQ15
DQM6
DQM2
LDQM
CS
LDQM
DQ16
DQ17
DQ18
DQ19
DQ20
DQ21
DQ22
DQ23
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
DQM3
DQ24
DQ25
DQ26
DQ27
DQ28
DQ29
DQ30
DQ31
UDQM
UDQM
DQ8
DQ9
DQ10
DQ11
DQ12
DQ13
DQ14
DQ15
DQ8
DQ9
DQ10
DQ11
DQ12
DQ13
DQ14
DQ15
U1
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
A0 ~ A11, BA0 & 1
SDRAM U0 ~ U7
RAS
SDRAM U0 ~ U7
CS
U5
DQ48
DQ49
DQ50
DQ51
DQ52
DQ53
DQ54
DQ55
DQM7
DQ56
DQ57
DQ58
DQ59
DQ60
DQ61
DQ62
DQ63
LDQM
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
UDQM
DQ8
DQ9
DQ10
DQ11
DQ12
DQ13
DQ14
DQ15
CKE0
SDRAM U0 ~ U3
CKE1
CS
U7
Serial PD
47KΩ
SDRAM U0 ~ U7
U3
DQ8
DQ9
DQ10
DQ11
DQ12
DQ13
DQ14
DQ15
SDRAM U0 ~ U7
WE
LDQM
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
UDQM
SCL
CAS
CS
WP
SA0 SA1 SA2
SDA
SDRAM U4 ~ U7
10Ω
DQn
Every DQ pin of SDRAM
U0/U4
V DD
Three 0.1 uF X7R 0603 Capacitors
per each SDRAM
CLK0/1
To all SDRAMs
Vss
U1/U5
U2/U6
U3/U7
Note : Use a zero ohm jumper to isolate A12 from the SDRAM pins in non-256Mbit designs.
Rev. 0.1 Sept. 2001
M464S1724DTS
PC133/PC100 SODIMM
ABSOLUTE MAXIMUM RATINGS
Parameter
Symbol
Value
Unit
Voltage on any pin relative to Vss
V I N, VOUT
-1.0 ~ 4.6
V
Voltage on V DD supply relative to Vss
V DD, VDDQ
-1.0 ~ 4.6
V
TSTG
-55 ~ +150
°C
Storage temperature
Power dissipation
PD
8
W
Short circuit current
IOS
50
mA
Note : Permanent device damage may occur if "ABSOLUTE MAXIMUM RATINGS" are exceeded.
Functional operation should be restricted to recommended operating condition.
Exposure to higher than recommended voltage for extended periods of time could affect device reliability.
DC OPERATING CONDITIONS AND CHARACTERISTICS
Recommended operating conditions (Voltage referenced to V SS = 0V, T A = 0 to 70°C)
Parameter
Symbol
Min
Typ
Max
Unit
Supply voltage
V DD
3.0
3.3
3.6
V
Input high voltage
V IH
2.0
3.0
V DDQ+0.3
V
1
Input low voltage
V IL
-0.3
0
0.8
V
2
Output high voltage
V OH
2.4
-
-
V
IOH = -2mA
Output low voltage
V OL
-
-
0.4
V
IOL = 2mA
ILI
-10
-
10
uA
3
Input leakage current
Note
Notes : 1. V IH (max) = 5.6V AC.The overshoot voltage duration is ≤ 3ns.
2. V IL (min) = -2.0V AC. The undershoot voltage duration is ≤ 3ns.
3. Any input 0V ≤ V IN ≤ V DDQ .
Input leakage currents include Hi-Z output leakage for all bi-directional buffers with Tri-State outputs.
CAPACITANCE
(V DD = 3.3V, T A = 23°C, f = 1MHz, VREF = 1.4V ± 200 mV)
Parameter
Symbol
Min
Max
Unit
Input capacitance (A 0 ~ A 11, BA0 ~ BA1)
CIN1
25
45
pF
Input capacitance (RAS , CAS, WE)
CIN2
25
45
pF
Input capacitance (CKE0 ~ CKE1)
CIN3
15
25
pF
Input capacitance (CLK0 ~ CLK1)
CIN4
15
21
pF
Input capacitance (CS0 ~ CS1)
CIN5
15
25
pF
Input capacitance (DQM0 ~ DQM7)
CIN6
10
12
pF
Data input/output capacitance (DQ0 ~ DQ63)
C OUT
10
12
pF
Rev. 0.1 Sept. 2001
M464S1724DTS
PC133/PC100 SODIMM
DC CHARACTERISTICS
(Recommended operating condition unless otherwise noted, T A = 0 to 70°C)
Parameter
Operating current
(One bank active)
Precharge standby current
in power-down mode
ICC1
Burst length = 1
tRC ≥ tRC(min)
IO = 0 mA
-7C
-7A
-1H
-1L
560
520
520
520
Unit
Note
mA
1
CKE ≤ V IL(max), tCC = 10ns
16
ICC2PS
CKE & CLK ≤ V IL (max), tCC = ∞
16
ICC2 N
CKE ≥ V I H(min), CS ≥ V IH (min), tCC = 10ns
Input signals are changed one time during 20ns
160
CKE ≥ V I H(min), CLK ≤ V IL (max), t CC =∞
Input signals are stable
80
ICC3 P
CKE ≤ V IL(max), tCC = 10ns
40
ICC3PS
CKE & CLK ≤ V IL (max), tCC = ∞
40
ICC3 N
CKE ≥ V I H(min), CS ≥ V IH (min), tCC = 10ns
Input signals are changed one time during 20ns
240
mA
CKE ≥ V I H(min), CLK ≤ V IL (max), t CC =∞
Input signals are stable
200
mA
ICC2 NS
Active standby current in
non power-down mode
(One bank active)
Test Condition
ICC2 P
Precharge standby current
in non power-down mode
Active standby current in
power-down mode
Version
Symbol
ICC3 NS
mA
mA
mA
ICC4
IO = 0 mA
Page burst
4Banks activated
tCCD = 2CLKs
680
680
640
640
mA
1
Refresh current
ICC5
tRC ≥ tRC(min)
1000
920
880
880
mA
2
Self refresh current
ICC6
CKE ≤ 0.2V
Operating current
(Burst mode)
Notes :
C
16
mA
L
6.4
mA
1. Measured with outputs open.
2. Refresh period is 64ms.
3. Unless otherwise noted, input swing level is CMOS(V IH /VIL=VDDQ /VSSQ)
Rev. 0.1 Sept. 2001
M464S1724DTS
PC133/PC100 SODIMM
AC OPERATING TEST CONDITIONS (V DD = 3.3V ± 0.3V, TA = 0 to 70°C)
Parameter
AC input levels (Vih/Vil)
Input timing measurement reference level
Input rise and fall time
Output timing measurement reference level
Output load condition
Value
Unit
2.4/0.4
V
1.4
V
tr/tf = 1/1
ns
1.4
V
See Fig. 2
3.3V
Vtt = 1.4V
1200Ω
50Ω
V OH (DC) = 2.4V, I O H = -2mA
V OL (DC) = 0.4V, I OL = 2mA
Output
870Ω
Output
Z0 = 50Ω
50pF
50pF
(Fig. 1) DC output load circuit
(Fig. 2) AC output load circuit
OPERATING AC PARAMETER
(AC operating conditions unless otherwise noted)
Parameter
Version
Symbol
- 7C
- 7A
- 1H
-1L
Unit
Note
Row active to row active delay
tRRD(min)
15
15
20
20
ns
1
RAS to CAS delay
tRCD(min)
15
20
20
20
ns
1
Row precharge time
tRP (min)
15
20
20
20
ns
1
tRAS(min)
45
45
50
50
ns
1
Row active time
tRAS(max)
Row cycle time
tRC(min)
Last data in to row precharge
tRDL (min)
Last data in to Active delay
100
ns
1
2
CLK
2,5
tDAL(min)
2 CLK + tRP
-
5
Last data in to new col. address delay
tCDL (min)
1
CLK
2
Last data in to burst stop
tBDL(min)
1
CLK
2
Col. address to col. address delay
tCCD(min)
1
CLK
3
ea
4
Number of valid output data
60
65
us
70
CAS latency=3
2
CAS latency=2
1
70
Notes : 1. The minimum number of clock cycles is determined by dividing the minimum time required with clock cycle time
and then rounding off to the next higher integer.
2. Minimum delay is required to complete write.
3. All parts allow every cycle column address change.
4. In case of row precharge interrupt, auto precharge and read burst stop.
5. In 100MHz and below 100MHz operating conditions, tRDL=1CLK and tDAL=1CLK + 20ns is also supported.
SAMSUNG recommends tRDL=2CLK and tDAL=2CLK + tRP.
Rev. 0.1 Sept. 2001
M464S1724DTS
PC133/PC100 SODIMM
AC CHARACTERISTICS (AC operating conditions unless otherwise noted)
REFER TO THE INDIVIDUAL COMPONENET, NOT THE WHOLE MODULE.
Parameter
- 7C
Symbol
Min
CLK cycle
time
CAS latency=3
CLK to valid
output delay
CAS latency=3
Output data
hold time
CAS latency=3
tCC
CAS latency=2
7.5
- 7A
Max
1000
7.5
tSAC
CAS latency=2
tO H
CAS latency=2
Min
7.5
- 1H
Max
1000
10
Min
10
- 1L
Max
1000
10
Min
10
Unit
Note
ns
1
ns
1,2
ns
2
Max
1000
12
5.4
5.4
6
6
5.4
6
6
7
3
3
3
3
3
3
3
3
CLK high pulse width
tCH
2.5
2.5
3
3
ns
3
CLK low pulse width
tCL
2.5
2.5
3
3
ns
3
Input setup time
tSS
1.5
1.5
2
2
ns
3
Input hold time
tSH
0.8
0.8
1
1
ns
3
CLK to output in Low-Z
tSLZ
1
1
1
1
ns
2
CLK to output
in Hi-Z
CAS latency=3
CAS latency=2
tSHZ
5.4
5.4
6
6
5.4
6
6
7
ns
Notes : 1. Parameters depend on programmed CAS latency.
2. If clock rising time is longer than 1ns, (tr/2-0.5)ns should be added to the parameter.
3. Assumed input rise and fall time (tr & tf) = 1ns.
If tr & tf is longer than 1ns, transient time compensation should be considered,
i.e., [(tr + tf)/2-1]ns should be added to the parameter.
Rev. 0.1 Sept. 2001
M464S1724DTS
PC133/PC100 SODIMM
SIMPLIFIED TRUTH TABLE
Command
Register
Mode register set
Auto refresh
Refresh
(V=Valid, X=Don′t care, H=Logic high, L=Logic low)
CKEn-1
CKEn
CS
RAS
CAS
WE
DQM
H
X
L
L
L
L
X
OP code
L
L
L
H
X
X
H
Entry
Self
refresh
Exit
H
H
Bank active & row addr.
H
X
Read &
column address
Auto precharge disable
H
X
Write &
column address
Auto precharge disable
L
H
H
H
H
X
X
X
L
L
H
H
X
V
L
H
L
H
X
V
X
X
L
H
L
L
H
X
X
L
L
H
H
L
H
L
L
X
Exit
Entry
H
L
H
L
H
L
Precharge power down mode
Exit
L
V
Column
address
(A0 ~ A 8)
L
X
X
All banks
Entry
L
DQM
H
No operation command
H
H
H
X
X
X
L
V
V
V
X
X
X
X
H
X
X
X
L
H
H
H
H
X
X
X
L
V
V
V
X
X
H
X
X
X
L
H
H
H
3
3
Column
address
(A0 ~ A 8)
H
H
Clock suspend or
active power down
3
Row address
H
H
Note
1,2
X
Auto precharge enable
Bank selection
A 11,
A 9 ~ A0
3
Auto precharge enable
Burst stop
A 10/AP
L
L
Precharge
BA 0,1
X
V
L
X
H
4
4,5
4
4,5
6
X
X
X
X
X
X
X
V
X
X
X
7
Notes : 1. OP Code : Operand code
A 0 ~ A 11 & BA0 ~ BA1 : Program keys. (@ MRS)
2. MRS can be issued only at all banks precharge state.
A new command can be issued after 2 clock cycles of MRS.
3. Auto refresh functions are as same as CBR refresh of DRAM.
The automatical precharge without row precharge command is meant by "Auto".
Auto/self refresh can be issued only at all banks precharge state.
4. BA 0 ~ BA 1 : Bank select addresses.
If both BA 0 and BA 1 are "Low" at read, write, row active and precharge, bank A is selected.
If both BA 0 is "Low" and BA1 is "High" at read, write, row active and precharge, bank B is selected.
If both BA 0 is "High" and BA 1 is "Low" at read, write, row active and precharge, bank C is selected.
If both BA 0 and BA 1 are "High" at read, write, row active and precharge, bank D is selected.
If A10 /AP is "High" at row precharge, BA 0 and BA 1 is ignored and all banks are selected.
5. During burst read or write with auto precharge, new read/write command can not be issued.
Another bank read/write command can be issued after the end of burst.
New row active of the associated bank can be issued at t RP after the end of burst.
6. Burst stop command is valid at every burst length.
7. DQM sampled at positive going edge of a CLK and masks the data-in at the very CLK (Write DQM latency is 0),
but makes Hi-Z state the data-out of 2 CLK cycles after. (Read DQM latency is 2)
Rev. 0.1 Sept. 2001
M464S1724DTS
PC133/PC100 SODIMM
PACKAGE DIMENSIONS
Units : Inches (Millimeters)
2.66
(67.56)
2.50
(63.60)
0.13
(3.30)
59
61
0.91
(23.20)
143
2 -φ 0.07
(1.80)
1.29
(32.80)
0.18
(4.60)
0.083
(2.10)
0.10
(2.50)
1 .2 5
0.79
0.24
(6.0)
1
(20 .0 0)
0.16 ± 0.039
(4.00 ± 0.10)
( 31.75 )
2-R 0.078 Min
(2.00 Min)
Z
Y
0.15
(3.70)
62
144
0.157 Min
(4.00 Min )
(3.20 Min )
0 .1 25 Min
0.150 Max
(3.80 Max)
0.04 ± 0.0039
0.16 ± 0.0039
(4.00 ± 0.10)
0.06 ± 0.0039
(1.50 ± 0.1)
(1.00 ± 0.10)
Detail Z
0 .1 00 Min
60
(2 .5 40 Min)
2
0.024 ± 0.001
(0.600 ± 0.050)
0.008 ± 0.006
(0.200 ± 0.150)
0.03 TYP
(0.80 TYP)
Detail Y
Tolerances : ±.006(.15) unless otherwise specified
The used device is 8Mx16 SDRAM, TSOP
SDRAM Part No. : K4S281632D
Rev. 0.1 Sept. 2001
M464S1724DTS
PC133/PC100 SODIMM
M464S1724DTS-C7C/L7C/C7A/L7A/C1H/L1H/C1L/L1L
•
•
•
•
•
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Organization : 8Mx64
Composition : 8Mx16 * 8
Used component part # : K4S281632D-TC7C/TL7C/TC75/TL75/TC1H/TL1H/TC1L/TL1L
# of rows in module : 2 Row
# of banks in component : 4 banks
Feature : 1,250mil height & double sided component
Refresh : 4K/64ms
Contents ;
Byte #
Function Supported
Function Described
-7C
-7A
-1H
Hex value
-1L
-7C
-7A
-1H
128bytes
80h
256bytes (2K-bit)
08h
Note
-1L
0
# of bytes written into serial memory at module manufacturer
1
Total # of bytes of SPD memory device
2
Fundamental memory type
3
# of row address on this assembly
4
# of column address on this assembly
5
6
7
...... Data width of this assembly
8
Voltage interface standard of this assembly
9
SDRAM cycle time @CAS latency of 3
7.5ns
7.5ns
10ns
10ns
75h
75h
A0h
A0h
2
10
SDRAM access time from clock @CAS latency of 3
5.4ns
5.4ns
6ns
6ns
54h
54h
60h
60h
2
11
DIMM configuraion type
12
Refresh rate & type
13
Primary SDRAM width
14
Error checking SDRAM width
15
Minimum clock delay for back-to-back random column address
16
SDRAM device attributes : Burst lengths supported
17
SDRAM device attributes : # of banks on SDRAM device
18
SDRAM device attributes : CAS latency
06h
06h
19
SDRAM device attributes : CS latency
0 CLK
01h
20
SDRAM device attributes : Write latency
0 CLK
01h
21
SDRAM module attributes
22
SDRAM device attributes : General
SDRAM
04h
12
0Ch
1
9
09h
1
# of module Rows on this assembly
2 row
02h
Data width of this assembly
64 bits
40h
-
00h
LVTTL
01h
Non parity
00h
15.625us, support self refresh
80h
x16
10h
None
00h
t CCD = 1CLK
01h
1, 2, 4, 8 & full page
8Fh
04h
4 banks
2&3
2&3
2&3
2&3
06h
06h
Non-buffered, non-registered
00h
& redundant addressing
+/- 10% voltage tolerance,
0Eh
Burst Read Single bit Write
precharge all, auto precharge
23
SDRAM cycle time @CAS latency of 2
7.5ns
10ns
10ns
12ns
75h
A0h
A0h
C0h
2
24
SDRAM access time from clock @CAS latency of 2
5.4ns
6ns
6ns
7ns
54h
60h
60h
70h
2
25
SDRAM cycle time @CAS latency of 1
-
-
-
-
00h
00h
00h
00h
26
SDRAM access time from clock @CAS latency of 1
-
-
-
-
00h
00h
00h
00h
27
Minimum row precharge time (=t RP)
15ns
20ns
20ns
20ns
0Fh
14h
14h
14h
28
Minimum row active to row active delay (tRRD)
15ns
15ns
20ns
20ns
0Fh
0Fh
14h
14h
29
Minimum RAS to CAS delay (=t RCD)
15ns
20ns
20ns
20ns
0Fh
14h
14h
14h
30
Minimum activate precharge time (=tRAS )
45ns
45ns
50ns
50ns
2Dh
2Dh
32h
32h
31
Module Row density
32
Command and address signal input setup time
1.5ns
1.5ns
2ns
2ns
15h
15h
20h
20h
33
Command and address signal input hold time
0.8ns
0.8ns
1ns
1ns
08h
08h
10h
10h
34
Data signal input setup time
1.5ns
1.5ns
2ns
2ns
15h
15h
20h
20h
10h
2 row of 64MB
Rev. 0.1 Sept. 2001
M464S1724DTS
Byte #
35
Function Supported
Function Described
Data signal input hold time
36~61
PC133/PC100 SODIMM
-7C
-7A
0.8ns
0.8ns
Superset information (maybe used in future)
62
SPD data revision code
63
Checksum for bytes 0 ~ 62
64
Manufacturer JEDEC ID code
65~71
Manufacturing location
73
-1L
-7C
-7A
10ns
10ns
08h
08h
-
00h
Intel Rev 1.2B
12h
-
...... Manufacturer JEDEC ID code
72
Hex value
-1H
66h
A7h
Samsung
CEh
Samsung
00h
Note
-1H
-1L
10h
10h
0Eh
3Eh
Onyang Korea
01h
Manufacturer part # (Memory module)
M
4Dh
74
Manufacturer part # (DIMM Configuration)
4
34h
75
Manufacturer part # (Data bits)
Blank
20h
76
...... Manufacturer part # (Data bits)
6
36h
77
...... Manufacturer part # (Data bits)
4
34h
78
Manufacturer part # (Mode & operating voltage)
S
53h
79
Manufacturer part # (Module depth)
1
31h
80
...... Manufacturer part # (Module depth)
7
37h
81
Manufacturer part # (Refresh, #of banks in Comp. & Interface)
2
32h
82
Manufacturer part # (Composition component)
4
34h
83
Manufacturer part # (Component revision)
D
44h
84
Manufacturer part # (Package type)
T
54h
85
Manufacturer part # (PCB revision & type)
86
Manufacturer part # (Hyphen)
87
Manufacturer part # (Power)
88
Manufacturer part # (Minimum cycle time)
7
7
1
1
37h
37h
31h
31h
89
Manufacturer part # (Minimum cycle time)
C
A
H
L
43h
41h
48h
4Ch
90
Manufacturer part # (TBD)
91
Manufacturer revision code (For PCB)
92
...... Manufacturer revision code (For component)
93
94
95~98
99~125
53h
2Dh
L/C
4Ch / 43h
Blank
20h
S
53h
D-die (5th Gen.)
44h
Manufacturing date (Year)
-
-
3
Manufacturing date (Week)
-
-
3
Assembly serial #
-
-
4
Manufacturer specific data (may be used in future)
126
System frequency for 100MHz
127
PC100 specification details
128+
S
"-"
Unused storage locations
Undefined
-
100MHz
64h
Detailed PC100 Information
Undefined
CFh
CFh
CFh
CDh
-
Note : 1. The row select address is excluded in counting the total # of addresses.
2. This value is based on the component specification.
3. These bytes are programmed by code of Date Week & Date Year with BCD format.
4. These bytes are programmed by Samsung ′s own Assembly Serial # system. All modules may have different unique serial #.
Rev. 0.1 Sept. 2001