VISHAY VBUS054CD-FHI

VBUS054CD-FHI
www.vishay.com
Vishay Semiconductors
4-Line BUS-Port ESD-Protection - Flow Through Design
FEATURES
nc.
10
nc. GND
8
9
nc.
7
• Compact LLP2513-11L package
nc.
6
• Low package height < 0.6 mm
• 4-line ESD-protection
11
21326
1
2
• Low leakage current IR < 0.1 μA
3
4
• Low load capacitance CD = 0.8 pF
5
D1 + D1 - GND D2 + D2 -
• Ideal for high speed data line like
- HDMI, DisplayPort, eSATA
- USB, 1394/firewire
21324
• ESD-protection acc. IEC 61000-4-2
± 15 kV contact discharge
± 15 kV air discharge
MARKING (example only)
• Soldering can be checked by standard vision inspection.
No X-ray necessary
YYXX
20720
• e4 - precious metal (e.g. Ag, Au, NiPd, NiPdAu) (no Sn)
Dot = pin 1 marking
YY = type code (see table below)
XX = date code
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
ORDERING INFORMATION
ORDERING CODE
TAPED UNITS PER REEL
(8 mm TAPE ON 7" REEL)
MINIMUM ORDER QUANTITY
VBUS054CD-FHI-GS08
3000
15 000
DEVICE NAME
VBUS054CD-FHI
PACKAGE DATA
DEVICE NAME
PACKAGE
NAME
VBUS054CD-FHI LLP2513-11L
TYPE
CODE
WEIGHT
MOLDING COMPOUND
FLAMMABILITY RATING
MOISTURE
SENSITIVITY LEVEL
SOLDERING
CONDITIONS
9X
5.5 mg
UL 94 V-0
MSL level 1
(according J-STD-020)
260 °C/10 s at terminals
ABSOLUTE MAXIMUM RATINGS
PARAMETER
TEST CONDITIONS
SYMBOL
VALUE
Peak pulse current
Acc. IEC 61000-4-5; tP = 8/20 μs; single shot
IPPM
3.5
A
Peak pulse power
Acc. IEC 61000-4-5; tP = 8/20 μs; single shot
PPP
45
W
Contact discharge acc. IEC 61000-4-2; 10 pulses
VESD
± 15
kV
Air discharge acc. IEC 61000-4-2; 10 pulses
VESD
± 15
kV
Junction temperature
TJ
- 40 to + 125
°C
TSTG
- 55 to + 150
°C
ESD immunity
Operating temperature
Storage temperature
Rev. 1.4, 31-May-12
UNIT
Document Number: 81882
1
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VBUS054CD-FHI
www.vishay.com
Vishay Semiconductors
ELECTRICAL CHARACTERISTICS (pin 1, 2, 4 or 5 to pin 3)
(Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITIONS/REMARKS
SYMBOL
MIN.
TYP.
MAX.
UNIT
Number of lines which can be protected
Nchannel
-
-
4
lines
Max. reverse working voltage
VRWM
-
-
5
V
Reverse voltage
at IR = 0.1 μA
VR
5
-
-
V
Reverse current
at VRWM = 5 V
IR
-
< 0.01
0.1
μA
at IR = 1 mA
VBR
6.9
7.9
8.7
V
at IPP = 1 A
VC
-
9.1
11
V
at IPP = IPPM = 3.5 A
VC
-
11.6
13
V
at IPP = 1 A
VF
-
1.6
2.4
V
at IPP = 3.5 A
VF
-
3.5
5
V
at VR = 0 V; f = 1 MHz
CD
-
0.8
1
pF
Protection paths
Reverse stand-off voltage
Reverse breakdown voltage
Reverse clamping voltage
Forward clamping voltage
Capacitance
APPLICATION NOTE
The VBUS054CD-FHI is a four-line ESD-protection device with the characteristic of a Z-diode with a high ESD-immunity and a
very low capacitance which makes it usable for high frequency applications like USB2.0 or HDMI.
With the VBUS054CD-FHI four high speed data lines can be protected against transient voltage signals like ESD (Electro Static
Discharge). Connected to the data line (pin 1, 2 and pin 4, 5) and to ground (pin 3, 8 and 11) negative transients will be clamped
close below the ground level while positive transients will be clamped close above the 5 V working range. The clamping
behaviour of the VBUS054CD-FHI is bidirectional but asymmetrical (BiAs) and so it offers the best protection for applications
running up to 5 V.
Pin configuration:
• Pin 3, 8 and 11 are internally shorted and have to be connected to ground
• Pin 1, 2 and 4, 5 are the inputs for the data lines D1+ and D1- and D2+ and D2• Pin 6, 7 and 9, 10 are not connected internally
USB/HDMI Interface
nc.
7
nc.
6
4
5
D1 + D1 -
11
21326
1
2
3
D2 + D2 -
10
matched pair
nc. GND
8
9
matched pair
nc.
10
9
D1 + D1 - GND D2 + D2 -
8
7
6
4
5
11
1
2
3
D1 + D1 - GND D2 +
D2 -
I/O Port Connector
21328
FLOW THROUGH DESIGN
Modern digital transmission lines can be clocked up to 480 Mbit/s (USB2.0) or 1.65 Gbit/s (HDMI).
At such high data rates the transmission lines like cables or the line traces on the PCBs have to be very homogeneous regarding
their surge impedance. This requires well defined trace dimensions as trace width and distance which have to be calculated
depending on the requested surge impedance (e.g. 50 ) and the PCB material and layer dimensions. Any device connected
to the data lines - like ESD-protection devices - have to be connected with minimal changes in these trace dimensions and
distances.
With the package in the so called “Flow Through Design” this is possible. The lines are running straight along the PCB while the
VBUS054CD-FHI is placed on top without any vias or loops.
Rev. 1.4, 31-May-12
Document Number: 81882
2
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VBUS054CD-FHI
www.vishay.com
Vishay Semiconductors
TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
100
120 %
Rise time = 0.7 ns to 1 ns
Discharge Current IESD
100 %
10
80 %
1
IF (mA)
60 %
53 %
0.1
40 %
Pin 3 to Pin 1, 2, 4 or 5
27 %
0.01
20 %
0.001
0.5
0%
- 10 0 10 20 30 40 50 60 70 80 90 100
0.6
0.7
0.8
Fig. 1 - ESD Discharge Current Wave Form
acc. IEC 61000-4-2 (330 /150 pF)
0.9
1
1.1
VF (V)
22349
Time (ns)
20557
Fig. 4 - Typical Forward Current IF vs. Forward Voltage VF
9
8 µs to 100 %
100 %
8
7
80 %
VR (V)
6
IPPM
60 %
20 µs to 50 %
40 %
Pin 1, 2, 4 or 5 to Pin 3
5
4
3
2
20 %
1
0%
0
10
20
30
0
0.01
40
Time (µs)
20548
Fig. 2 - 8/20 μs Peak Pulse Current Wave Form
acc. IEC 61000-4-5
2.0
1
10
100
1000 10 000
IR (µA)
Fig. 5 - Typical Reverse Voltage VR vs.
Reverse Current IR
14
f = 1 MHz
Measured acc. IEC 61000-4-5 (8/20µs - wave form)
1.8
12
Pin 1, 2, 4 or 5 to Pin 3
1.6
10
1.4
1.2
VC (V)
CD (pF)
0.1
22350
VR at Pin 2 or Pin 3 = 0 V
1.0
8
6
0.8
0.6
VC
4
VR at Pin 2 or Pin 3 = 3.3 V
Pin 3 to Pin 1, 2, 4 or 5
0.4
2
0.2
0
0
0
22348
1
2
3
4
VR at Pin 1 and Pin 4 (V)
Fig. 3 - Typical Capacitance CD vs. Reverse Voltage VR
Rev. 1.4, 31-May-12
0
5
21477
1
2
3
4
5
IPP (A)
Fig. 6 - Typical Peak Clamping Voltage VC vs.
Peak Pulse Current IPP
Document Number: 81882
3
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VBUS054CD-FHI
www.vishay.com
Vishay Semiconductors
100
Acc. IEC 61000-4-2
+ 8 kV
contact discharge
80
VC-ESD (V)
60
40
20
0
- 20
- 10 0 10 20 30 40 50 60 70 80 90
22352
t (ns)
Fig. 7 - Typical Clamping Performance at + 8 kV
Contact Discharge (acc. IEC 61000-4-2)
20
0
VC-ESD (V)
- 20
- 40
Acc. IEC 61000-4-2
- 8 kV
contact discharge
- 60
- 80
- 100
- 120
- 10 0 10 20 30 40 50 60 70 80 90
t (ns)
22353
Fig. 8 - Typical Clamping Performance at - 8 kV
Contact Discharge (acc. IEC 61000-4-2)
200
150
Positive discharge
VC-ESD (V)
100
Acc. IEC 61000-4-2
contact discharge
50
0
VC-ESD
- 50
- 100
Negative discharge
- 150
- 200
0
22354
5
10
15
20
VESD (kV)
Fig. 9 - Typical Peak Clamping Voltage at ESD
Contact Discharge (acc. IEC 61000-4-2)
Rev. 1.4, 31-May-12
Document Number: 81882
4
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VBUS054CD-FHI
www.vishay.com
Vishay Semiconductors
PACKAGE DIMENSIONS in millimeters (inches): LLP2513-11L
0.5 (0.020) bsc
0.28 (0.011)
0.19 (0.007)
0.4 (0.016)
0.25 (0.010)
0.22 (0.009)
2 (0.079) ref.
1.4 (0.055)
0.5 (0.020)
2.55 (0.100)
2.45 (0.096)
0.6 (0.024)
0.152 (0.006) ref.
0 (0.000)
0.05 (0.002)
1.3 (0.051)
Pin 1 marking
0.4 (0.016)
0.15 (0.006)
0.5 (0.020)
0.25 (0.010)
0.22 (0.009)
4 x 0.5 = 2 (0.079)
0.37 (0.015)
Foot print recommendation:
Solder
resist mask
Document no.:S8-V-3906.04-009 (4)
Created - Date: 15. April 2008
Rev. 2 - Date: 09. Sep. 2008
Solder pad
21382
Rev. 1.4, 31-May-12
Document Number: 81882
5
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VBUS054CD-FHI
www.vishay.com
Vishay Semiconductors
Pin 1 - Location
LLP1713
Top view
Pad layout - view from top
seen at bottom side
Pin 1 - Location
LLP2513
Top view
Pad layout - view from top
seen at bottom side
Pin 1 - Location
LLP3313
Top view
Rev. 1.4, 31-May-12
Pad layout - view from top
seen at bottom side
Document Number: 81882
6
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
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definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
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Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
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Revision: 02-Oct-12
1
Document Number: 91000