Ordering number:ENN6135 P-Channel Silicon MOSFET 5LP01M Ultrahigh-Speed Switching Applications Features Package Dimensions · Low ON resistance. · Ultrahigh-speed switching. · 2.5V drive. unit:mm 2158 0.3 0.2 0.425 [5LP01M] 0.15 3 0.425 2.1 1.250 0 to 0.1 1 2 0.65 0.65 2.0 0.3 0.6 0.9 1 : Gate 2 : Source 3 : Drain SANYO : MCP3 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Symbol Drain-to-Source Voltage Conditions Ratings VDSS VGSS Gate-to-Source Voltage Drain Current (DC) ID Drain Current (pulse) IDP Allowable Power Dissipation PW≤10µs, duty cycle≤1% Unit –50 V ±10 V –0.07 A –0.28 A 0.15 W Channel Temperature PD Tch 150 ˚C Storage Temperature Tstg –55 to +150 ˚C Electrical Characteristics at Ta = 25˚C Parameter Symbol Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance V(BR)DSS IDSS ID=–1mA, VGS=0 IGSS VGS(off) VGS=±8V, VDS=0 | yfs | Static Drain-to-Source On-State Resistance Conditions RDS(on)1 RDS(on)2 RDS(on)3 Ratings min typ –50 –0.4 70 Unit V VDS=–50V, VGS=0 VDS=–10V, ID=–100µA VDS=–10V, ID=–40mA max –10 µA ±10 µA –1.4 100 V mS ID=–40mA, VGS=–4V 18 23 Ω ID=–20mA, VGS=–2.5V ID=–5mA, VGS=–1.5V 20 28 Ω 30 60 Ω Marking : XB Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 31000TS (KOTO) TA-2040 No.6135-1/4 5LP01M Continued from preceding page. Parameter Symbol Ratings Conditions min typ Unit max Input Capacitance Ciss VDS=–10V, f=1MHz 7.4 pF Output Capacitance Coss VDS=–10V, f=1MHz 4.2 pF Reverse Transfer Capacitance Crss 1.3 pF Turn-ON Delay Time td(on) VDS=–10V, f=1MHz See specified Test Circuit 20 ns tr See specified Test Circuit 35 ns td(off) See specified Test Circuit 160 ns tf See specified Test Circuit 150 ns Qg VDS=–10V, VGS=–10V, ID=–70mA 1.40 nC 0.16 nC Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Qgs Gate-to-Drain "Miller" Charge Qgd VDS=–10V, VGS=–10V, ID=–70mA VDS=–10V, VGS=–10V, ID=–70mA Diode Forward Voltage VSD IS=–70mA, VGS=0 0.23 nC –0.85 –1.2 V Switching Time Test Circuit 0V --4V VDD=--25V VIN ID=--40mA RL=625Ω VIN PW=10µs D.C.≤1% D VOUT G 5LP01M 50Ω S Ta=- --0.12 --0.04 --0.03 VGS=--1.5V --0.02 --0.01 --0.10 C .0V --2 Drain Current, ID – A --3 .5 --0.05 VDS=--10V 25°C V .5 --2 V --3 .0 V 0V --6 . 0V --4 . Drain Current, ID – A --0.06 ID -- VGS --0.14 25°C ID -- VDS --0.07 75° P.G --0.08 --0.06 --0.04 --0.02 0 0 0 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 --1.4 --1.6 Drain-to-Source Voltage, VDS – V --1.8 0 --2.0 RDS(on) -- VGS 40 --0.5 --1.0 --1.5 --2.0 --2.5 25 ID=20mA 40mA 20 15 10 0 --1 --2 --3 --4 --5 --6 --7 --8 Gate-to-Source Voltage, VGS – V --9 --10 IT00092 --4.0 IT00091 VGS=--4V Static Drain-to-Source On-State Resistance, RDS (on) – Ω Static Drain-to-Source On-State Resistance, RDS (on) – Ω 30 --3.5 RDS(on) -- ID 5 Ta=25°C 35 --3.0 Gate-to-Source Voltage, VGS – V IT00090 3 Ta=75°C 2 25°C --25°C 10 --0.01 2 3 5 7 --0.1 Drain Current, ID – A 2 3 IT00093 No.6135-2/4 5LP01M RDS(on) -- ID 7 VGS=--2.5V 2 Ta=75°C 7 25°C 5 --25°C 3 2 10 --0.01 2 3 5 7 2 --0.1 Drain Current, ID – A V 2.5 =-S V VG 4.0 A, m =-0 2 S =-,VG ID mA 0 4 =-ID 15 10 --60 --40 --20 0 20 40 60 80 100 120 Ambient Temperature, Ta – ˚C 140 5 --0.8 --0.9 --1.0 --1.1 Diode Forward Voltage, VSD – V 2 5°C Ta=--2 0.1 5 3 2 Crss 1.0 7 5 3 3 2 5 7 2 --0.1 3 IT00097 SW Time -- ID VDD=--25V VGS =--4V 5 tf 3 2 td(off) 100 7 5 tr 3 td(on) 2 2 3 5 7 Drain Current, ID – A Gate-to-Source Voltage, VGS – V Coss 3 2 2 --0.1 IT00099 VGS -- Qg --10 Ciss 7 5 25°C 75°C 7 VDS=--10V ID=--70mA --9 10 3 IT00095 VDS=--10V f=1MHz 2 2 --0.01 3 IT00098 3 7 yfs -- ID 10 --0.01 --1.2 Ciss, Coss, Crss -- VDS 100 7 5 5 7 --25°C 25°C 3 --0.7 3 Drain Current, ID – A Drain Current, ID – A Switching Time, SW Time – ns 7 Ta=7 5°C Forward Current, IF – A --0.1 --0.6 2 1000 2 --0.01 --0.5 2 IT00096 VGS=0 2 --25°C 0.01 --0.01 160 IF -- VSD 3 25°C 3 5 30 20 Ta=75°C IT00094 35 25 5 10 --0.001 3 RDS(on) -- Ta 40 Static Drain-to-Source On-State Resistance, RDS (on) – Ω Static Drain-to-Source On-State Resistance, RDS (on) – Ω 3 100 VGS=--1.5V Forward Transfer Admittance, | yfs | – S Static Drain-to-Source On-State Resistance, RDS (on) – Ω 5 Ciss, Coss, Crss – pF RDS(on) -- ID 7 --8 --7 --6 --5 --4 --3 --2 --1 0 0.1 0 --5 --10 --15 --20 --25 --30 --35 --40 Drain-to-Source Voltage, VDS – V --45 --50 IT00100 0 0.2 0.4 0.6 0.8 1.0 1.2 Total Gate Charge, Qg – nC 1.4 1.6 IT00101 No.6135-3/4 5LP01M PD -- Ta Allowable Power Dissipation, PD – W 0.20 0.15 0.10 0.05 0 0 20 40 60 80 100 120 Ambient Temperature, Ta – ˚C 140 160 IT00102 Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be expor ted without obtaining the expor t license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of March, 2000. Specifications and information herein are subject to change without notice. PS No.6135-4/4