Ordering number:EN5694 N-Channel Silicon MOSFET FTS2001 DC-DC Converter Applications Features Package Dimensions · Low ON resistance. · 2.5V drive. · Mount height 1.1mm. unit:mm 2147 3.0 [FTS2001] 0.975 0.65 5 1 4 6.4 0.125 1.0 1.2max 0.25 0.1 Specifications SANYO:SOP8 Absolute Maximum Ratings at Ta = 25˚C Parameter Drain-to-Source Voltage Gate-to-Source Voltage 1:Drain 2:Source 3:Source 4:Gate 5:Drain 6:Source 7:Source 8:Drain 0.95 4.5 0.5 0.95 8 Symbol Conditions Ratings Unit VDSS VGSS Drain Current (DC) 20 V ±10 V 5 A ID Drain Current (pulse) IDP PW≤10µs, duty cycle≤1% 30 A Allowable Power Dissipation Mounted on a ceramic board (1000mm2×0.8mm) 1.5 W Channel Temperature PD Tch 150 ˚C Storage Temperature Tstg –55 to +150 ˚C Electrical Characteristics at Ta=25˚C Parameter Drain-to-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-to-Source Leakage Current Symbol V(BR)DSS IDSS Conditons ID=1mA, VGS=0 Ratings min typ max 20 Unit V VDS=20V, VGS=0 100 µA ±10 µA 1.3 V 23 30 mΩ 46 mΩ VGS=±8V, VDS=0 Forward Transfer Admittance IGSS VGS(off) | yfs | Static Drain-to-Source ON-State Resistance RDS(on)1 ID=5A, VGS=4V RDS(on)2 Ciss ID=2A, VGS=2.5V 32 Input Capacitance VDS=10V, f=1MHz VDS=10V, f=1MHz 750 pF 520 pF 300 pF 20 ns Cutoff Voltage VDS=10V, ID=1mA VDS=10V, ID=5A 0.4 9 15 S Output Capacitance Coss Reverse Transfer Capacitance Crss Turn-ON Delay Time td(on) VDS=10V, f=1MHz See Specified Test Circuit tr See Specified Test Circuit 200 ns td(off) See Specified Test Circuit 150 ns tf See Specified Test Circuit 150 ns 30 nC 5 nC Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Qg Gate-to-Source "Miller" Charge Qgs Gate-to-Drain Charge Qgd Diode Forward Voltage VSD VDS=10V, VGS=10V, ID=5A 7 IS=5A, VGS=0 1.0 nC 1.2 V SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 61598TS (KOTO) TA-1232 No.5694-1/3 FTS2001 Switching Time Test Circuit VDD=10V VIN 4V 0V ID=5A RL=2Ω VIN PW=10µs D.C.≤1% D VOUT G FTS2001 P.G 50Ω S I D - VDS 3 2 6 ˚C 5 4 - 25 4 7 Ta = 1.5V 5 75˚C 8 25˚C 8V 6 I D - VGS VDS =10V 9 Drain Current, I D – A Drain Current, I D – A 7 10 6V 4 3VV 2.5 V 2V 8 3 2 1 1 VGS=1V 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0.4 0.2 | yfs | - I D 100 7 5 VDS=10V 3 2 ˚C 25 5˚C 10 7 5 = Ta -2 ˚C 75 3 2 1.0 7 5 1.2 1.4 – V 1.6 1.8 Tc=25˚C 50 ID=5A 40 2A 30 20 2 3 5 7 10 0 2 3 5 7 100 0 1 5 6 7 50 2.5V ,VGS = ID =2A V GS =4 ID =5A,V 20 8 – 9 10 0.9 1.0 V 3 2 1.0 7 5 3 2 ˚C 60 30 4 I F - VSD 10 7 VGS=0 5 70 40 3 Gate-to-Source Voltage, VGS R DS(on) - Tc 80 2 0.1 7 5 0.5 0.6 - 25˚C 2 3 5 7 1.0 25˚C 2 3 5 7 0.1 Forward Current, IF – A Static Drain-to-Source ON-State Resistance, RDS (on) – mΩ 1.0 R DS(on) - VGS 60 Drain Current, ID – A 3 2 10 0 -60 0.8 10 3 2 0.1 0.01 0.6 Gate-to-Source Voltage, VGS Static Drain-to-Source ON-State Resistance, RDS (on) – mΩ Forward Transfer Admittance, | yfs | – S Drain-to-Source Voltage, VDS – V Ta =7 5 0 0 0 0 -40 -20 0 20 40 60 80 Case Temperature, Tc – ˚C 100 120 140 0.01 0 0.1 0.2 0.3 0.4 0.7 0.8 Diode Forward Voltage, VSD – V No.5694-2/3 FTS2001 Ciss,Coss,Crss - VDS 10000 5 Ciss,Coss,Crss – pF VDS=10V 9 ID =5A Gate-to-Source Voltage, VGS – V 7 3 2 1000 Ciss 7 5 Coss 3 Crss 2 VGS - Q g 10 f = 1MHz 8 7 6 5 4 3 2 1 100 0 2 4 6 8 10 12 14 16 18 0 0 20 5 Drain-to-Source Voltage, VDS – V SW Time - I D 1000 Drain Current, I D – A tr Switching Time, SW Time – ns tf 2 td (of f) 100 7 5 3 t d(on) 2 10 7 0.1 2 3 5 7 1.0 2 3 5 7 10 2 Drain Current, I D – A PD - Allowable Power Dissipation, PD – W 2.0 1.5 15 20 25 30 A S O 100 µs I DP = 3 0 A 3 2 5 3 ,,,,,, ,,,,,, ,,,,,, 5 VDD =10V VGS = 4V 7 10 Total Gate Charge, Qg – nC 1m 10 7 ID=5A 5 10m s 10 0m s 3 2 1.0 7 Operation in this area 5 is limited by RDS(on). 3 2 s DC op era tio n Ta= 25˚C 0.1 1pulse 7 Mounted on ceramic board (1000mm2×0.8mm) 5 2 3 5 7 1.0 2 3 5 7 10 2 3 Drain-to-Source Voltage, VDS – V Ta M ou nte do nc era mi 1.0 cb oa rd (1 00 0m m2 ×0 0.5 .8m m) 0 0 20 40 60 80 100 120 140 160 Storage Temperature, Ta – ˚C No products described or contained herein are intended for use in surgical implants, life-support systems, aerospace equipment, nuclear power control systems, vehicles, disaster/crime-prevention equipment and the like, the failure of which may directly or indirectly cause injury, death or property loss. Anyone purchasing any products described or contained herein for an above-mentioned use shall: Accept full responsibility and indemnify and defend SANYO ELECTRIC CO., LTD., its affiliates, subsidiaries and distributors and all their officers and employees, jointly and severally, against any and all claims and litigation and all damages, cost and expenses associated with such use: Not impose any responsibilty for any fault or negligence which may be cited in any such claim or litigation on SANYO ELECTRIC CO., LTD., its affiliates, subsidiaries and distributors or any of their officers and employees jointly or severally. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of June, 1998. Specifications and information herein are subject to change without notice. PS No.5694-3/3