AM83135-010 RF & MICROWAVE TRANSISTORS S-BAND RADAR APPLICATIONS .. .. .. . REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED LOW THERMAL RESISTANCE INPUT/OUTPUT MATCHING OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE P OUT = 10 W MIN. WITH 5.0 dB GAIN .310 x .310 2LFL (S064) hermetically sealed ORDER CODE AM83135-010 DESCRIPTION The AM83135-010 device is a high power silicon bipolar NPN transistor specifically designed for S-Band radar pulsed output and driver applications. BRANDING 83135-10 PIN CONNECTION This device is characterized at 100µsec pulse width and 10% duty cycle, but is capable of operation over a range of pulse widths, duty cycles, and temperatures, and can withstand a 3:1 output VSWR with a + 1 dB input overdrive. Low RF thermal resistance, refractory/gold metallization, and computerized automatic wire bonding techniques ensure high reliability and product consistency (including phase characteristics). The AM83135-010 is supplied in the IMPAC hermetic metal/ceramic package with internal input/output impedance matching circuitry, and is intended for military and other high reliability applications. 1. Collector 2. Base 3. Emitter 4. Base ABSOLUTE MAXIMUM RATINGS (T case = 25 ° C) Symbol PDISS IC VCC TJ T STG Parameter Value Unit 50 W Device Current* 2 A Collector-Supply Voltage* 46 V Junction Temperature (Pulsed RF Operation) 250 °C − 65 to +200 °C 4.0 °C/W Power Dissipation* (TC ≤ 50°C) Storage Temperature THERMAL DATA RTH(j-c) Junction-Case Thermal Resistance* *Applies only to rated RF amplifier operation July 27, 1994 1/4 AM83135-010 ELECTRICAL SPECIFICATIONS (T case = 25 ° C) STATIC Symbol Value Test Conditions Min. Typ. Max. Unit BVCBO I C = 7 mA IE = 0 mA 55 — — V BVEBO I E = 1 mA IC = 0 mA 3.5 — — V BVCER I C = 7 mA RBE = 10 Ω 55 — — V ICES VBE = 0 V VCE = 40 V — — 5 mA hFE VCE = 5 V IC = 600 mA 30 — — — DYNAMIC Symbol Value Test Conditions Typ. Max. Unit POUT ηc f = 3.1 − 3.5 GHz PIN = 3.2 W VCC = 40 V 10 — — W f = 3.1 − 3.5 GHz POUT = 10 W VCC = 40 V 30 — — % PG f = 3.1 − 3.5 GHz POUT = 10 W VCC = 40 V 5.0 — — dB Note: Pulse W idth Duty Cycle = = 100 µ Sec 10% TYPICAL PERFORMANCE POWER OUTPUT & COLLECTOR EFFICIENCY vs FREQUENCY 2/4 Min. AM83135-010 IMPEDANCE DATA TYPICAL INPUT IMPEDANCE Z IN Z CL TYPICAL COLLECTOR LOAD IMPEDANCE ZCL L H ZIN FREQ. ZIN (Ω) ZCL (Ω) L = 3.1 GHz 12.1 − j 1.6 12.7 + 16.0 M = 3.3 GHz 10.0 + j 1.9 14.3 + j 9.5 H = 3.5 GHz 5.5 + j 1.7 6.8 + j 7.7 H L PIN = 3.2W VCC = 40V Normalized to 50 ohms TEST CIRCUIT All dimensions are in mils. Substrate material: .025” thick Al 2O3 C1,C2 : 33 pF 50V Chip Capacitor C3 : 1 µf 50V Electrolytic Capacitor C4 : 1000 pF 200V Feedthru Capacitor C5 C6 C7 L1,L2 : : : : 0.1 µF 50V Disc Ceramic Capacitor 100 µf 63V Electrolytic Capacitor 33 pF 50V Chip Capacitor RF Choke, 2 Turns #26 Tinned Wire, .080” I.D. 3/4 AM83135-010 PACKAGE MECHANICAL DATA Ref.: Dwg. No. 12-0221 rev. A Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsibili ty for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectronics. 1994 SGS-THOMSON Microelectronics - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. 4/4